JP2020013899A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2020013899A JP2020013899A JP2018135260A JP2018135260A JP2020013899A JP 2020013899 A JP2020013899 A JP 2020013899A JP 2018135260 A JP2018135260 A JP 2018135260A JP 2018135260 A JP2018135260 A JP 2018135260A JP 2020013899 A JP2020013899 A JP 2020013899A
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 239000004020 conductor Substances 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 87
- 238000002161 passivation Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L21/8232—Field-effect technology
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- H01L2224/02165—Reinforcing structures
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract
Description
ここで、一般的に、SOI基板のシリコン基板は電位が印加されていないフローティング状態とされているか、又はシリコン基板にはグランド電位が印加されている。
このため、仮に、サージ電圧がカソード領域に印加されると、支持基板のpn接合ダイオードに対向する領域又はその近傍に即座にサージ電圧が印加されるので、pn接合部に生じる電界を即座に緩和してpn接合ダイオードの接合耐圧を向上させることができる。
このため、仮に、サージ電圧がリードからワイヤ及び外部端子を介してカソード領域に印加されると、リードからダイパッド又は配線基板を介して支持基板にサージ電圧を印加させることができる。従って、pn接合ダイオードのフィールドプレート効果による接合耐圧の向上を簡易に実現することができる。
このため、仮に、サージ電圧がカソード領域に印加されると、トレンチに埋設された導電体を介して支持基板に簡易にサージ電圧を印加させることができる。従って、pn接合ダイオードのフィールドプレート効果による接合耐圧の向上を簡易に実現することができる。
以下、図1及び図2を用いて、本発明の第1実施の形態に係る半導体装置について説明する。
図1に示されるように、本実施の形態に係る半導体装置1は基板(半導体ペレット又は半導体チップ)2を主体に構成されている。基板2の主面部には保護素子としてのpn接合ダイオードD(以下、単に「ダイオードD」という。)が配設され、ダイオードDは逆方向接続において外部端子BPに電気的に接続されている。
絶縁層21は、埋込み酸化膜(BOX:Buried Oxide)として形成され、具体的にはシリコン酸化膜により形成されている。絶縁層21は、例えば、イオン注入法を用いて、支持基板20の内部に酸素を注入し、支持基板20内部のシリコンを部分的に酸化させることにより形成されている。
活性層22は、ここでは支持基板20と同様にシリコン単結晶層により形成され、低不純物密度のp型に設定されている。活性層22は、支持基板20の表面層の一部を用いて形成され、絶縁層21が形成されることによってこの絶縁層21を境として支持基板20と区画(電気的に分離)されている。活性層22には、ダイオードDが配設されると共に、ダイオードD以外であって回路を構築する半導体素子が配設されている。
アノード領域としての活性層22の主面部には、活性層22と同一導電型のp型半導体領域5が配設されている。p型半導体領域5はn型半導体領域4の不純物密度よりも高い不純物密度に設定されている。p型半導体領域5が配設されることにより、アノード領域としての活性層22とそれに電気的に接続される配線(図2に示される配線12)との接触抵抗を小さくすることができる。
一対のn型半導体領域8は、活性層22の主面部においてゲート幅方向へ離間して配設されている。n型半導体領域8は、p型半導体領域5とは反対導電型であるが、p型半導体領域5と同程度の不純物密度に設定されている。活性層22において一対のn型半導体領域8間はチャネル形成領域として使用されている。
ゲート絶縁膜6は活性層22の主面上において一対のn型半導体領域8間に少なくとも形成されている。ゲート絶縁膜6として、シリコン酸化膜の単層膜、又はシリコン酸化膜とシリコン窒化膜とを積層した複合膜を使用することができる。
ゲート電極7はゲート絶縁膜6上に配設されている。ゲート電極7には、例えば、不純物が導入されて低抵抗値に調整されたシリコン多結晶膜の単層膜、又はシリコン多結晶膜上に高融点金属膜や高融点金属シリサイド膜を積層した複合膜を使用することができる。
このように構成されるトランジスタTrはnチャネル導電型に設定されている。なお、本実施の形態では、活性層22に図示省略のpチャネル導電型トランジスタが配設されており、相補型トランジスタ(complementary transistor)が構築されている。
図1では省略されているが、図2に示されるように、基板2上には、第1層目のパッシベーション膜10、第1層目の配線12、第2層目のパッシベーション膜13、第2層目の配線15、第3層目のパッシベーション膜16のそれぞれが順次配設されている。本実施の形態において、半導体装置1は、配線12及び配線15を含む2層配線構造を採用しているが、単層配線構造又は3層以上の配線構造が採用されてもよい。
また、ダイオードDのアノード領域としてのp型半導体領域5には、他の配線12の一端部が接続孔11を通して接続されている。この他の配線12の他端部は、図示省略の回路に接続されている。
配線12には、例えば、銅(Cu)、シリコン(Si)が添加されたアルミニウム合金膜が使用されている。
パッシベーション膜13、パッシベーション膜16のそれぞれは例えばパッシベーション膜10と同様の材料により形成されている。また、配線15は配線12と同様の材料により形成されている。
インナーリード32は、ダイパッド31の板面方向であって、このダイパッド31の周囲に配列されている。インナーリード32は樹脂封止体38の内部に配設されている。インナーリード32のダイパッド31側の一端部は、ボンディングワイヤ36を介して、基板2の外部端子BP(配線15)に電気的に接続されている。
そして、アウターリード33は、インナーリード32の他端部に一体に形成され、樹脂封止体38の外部に導出されている。図示を省略するが、アウターリード33は、半導体装置1を実装基板へ実装する構造に対応させて、端子挿入型や表面実装型のリード形状に成形されている。
また、ボンディングワイヤ36には例えばAuワイヤが使用されている。
図1に概略的に示されるように、半導体装置1は、保護素子としてのダイオードDのカソード領域であるn型半導体領域4と基板2の支持基板20とを電気的に接続する接続手段(接続構造)10を更に備えている。
このような接続手段50を備えることにより、アウターリード33から外部端子BPを通してダイオードDのカソード領域へ正のサージ電圧が印加される(入力される)と、同様の正のサージ電圧がダイパッド31を通して支持基板20へ印加される。
本実施の形態に係る半導体装置1は、図1に示されるように、基板2にダイオードDを含んで構成される保護素子を備える。基板2は、導電性を有する支持基板20と、この支持基板20上の絶縁層21と、絶縁層21上の活性層22とを有する。ダイオードDは、活性層22に配設され、アノード領域及びカソード領域を含んで構成される。少し詳しく説明すると、アノード領域はp型活性層22により構成され、カソード領域は活性層22の主面部に形成されたn型半導体領域4により構成される。
仮に、ダイオードDのカソード領域に正のサージ電圧が印加されると、このサージ電圧は支持基板20にも印加される。基板2は支持基板20、絶縁層21及び活性層22によるフィールドプレート構造を構築する。支持基板20にサージ電圧が印加されると、フィールドプレート効果により活性層22に電界効果が発生し、アノード領域とカソード領域とのpn接合部に形成される空乏層を広げてpn接合部に生じる電界が緩和される。このため、活性層22の不純物密度を低く設定することなく、ダイオードDの接合耐圧を向上させることができる。
表現を代えると、SOI構造を有する基板2を利用して、ダイオードDのカソード領域と支持基板20とを電気的に短絡させる簡易な構成により、フィールドプレート構造を簡単に構築することができる。すなわち、あえて、半導体装置1の製造プロセスを増加して、活性層22の表面側にフィールドプレート構造を構築せずに、ダイオードDの耐圧を向上させることができる。
表現を代えれば、ダイオードDの特にアノード領域とカソード領域とのpn接合部に対向する領域において、少なくとも支持基板20がカソード領域と短絡されていればよい。特に、支持基板20が低不純物密度に設定されている場合には、支持基板20のシート抵抗値が高くなるので、ダイオードDに近い領域において支持基板20にサージ電圧が印加されることが好ましい。
このように構成される半導体装置1によれば、ダイオードDのカソード領域に例えば正のサージ電圧が印加されると、支持基板20のダイオードDに対向する領域に即座にサージ電圧が印加される。このため、ダイオードDのpn接合部に生じる電界を即座に緩和してダイオードDの接合耐圧を向上させることができる。
なお、トランジスタTr以外の半導体素子として、バイポーラトランジスタ、拡散抵抗、又は金属−絶縁体−半導体(MIS:Metal Insulator Semiconductor)型容量の少なくとも1つが配設される場合にも、半導体素子の特性の変動を抑制することができる。
例えば、バイポーラトランジスタでは、活性層22の不純物密度を低く設定する必要がないので、動作領域に付加される寄生容量の変動がない。また、拡散抵抗は例えばn型半導体領域により形成され、拡散抵抗と活性層22とのpn接合部に発生する空乏層の広がりを抑制することができるので、拡散抵抗に付加される寄生容量の変動がない。さらに、MIS型容量では、空乏層の広がりを抑制することができるので、容量に付加される寄生容量の変動がない。
このため、仮に、正のサージ電圧がリード30からボンディングワイヤ36及び外部端子BPを介して(信号経路を通して)カソード領域に印加されると、リード30からダイパッド31を介して(短絡経路を通して)支持基板20に簡易に正のサージ電圧を印加させることができる。従って、ダイオードDのフィールドプレート効果による接合耐圧の向上を簡易に実現することができる。
図3を用いて、本発明の第2実施の形態に係る半導体装置について説明する。なお、本実施の形態において、第1実施の形態に係る半導体装置1の構成要素と同一、又は実質的に同一の構成要素には同一符号を付し、重複する説明は省略する。
絶縁体46は、トレンチ45の側壁に形成され、例えばシリコン酸化膜により形成されている。このシリコン酸化膜は、例えば化学的気相析出(CVD)法を用いて形成することができる。
導電体47は、トレンチ45の内部に絶縁体46を介して埋設されている。導電体47として、例えば、不純物が導入されて低抵抗値に調整されたシリコン多結晶膜が使用されている。製造プロセスにおいて、シリコン多結晶膜は、例えばCVD法を用いて、トレンチ45内部を埋設しつつ、活性層22上が平坦になるまで堆積される。そして、トレンチ45の内部が完全に埋設されつつ、活性層22上に一定の配線としての厚さを残してシリコン多結晶膜の表面が平坦化される。平坦化には、エッチング法、ケミカルメカニカルポリシング(CMP)法を使用することができる。
(本実施の形態の作用及び効果)
本実施の形態に係る半導体装置1では、図3に示されるように、接続手段52は、トレンチ45と、絶縁体46と、導電体47とを備える。トレンチ45は、活性層22の表面から支持基板20へ至る構成とされている。絶縁体46は、トレンチ45の側壁に配設される。導電体47は、トレンチ45の内部に絶縁体46を介して埋設される。ここで、ダイオードDのカソード領域は導電体47を介して支持基板20に電気的に接続される。
このため、仮に、正のサージ電圧がカソード領域に印加されると、トレンチ45に埋設された導電体47を介して支持基板20に簡易にサージ電圧を印加させることができる。従って、トランジスタTrの特性を変動させることがなく、ダイオードDのフィールドプレート効果による接合耐圧の向上を簡易に実現することができる。
本発明は、上記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲において、例えば下記の通り変形可能である。
本発明は、半導体装置の基板において、支持基板はシリコン単結晶基板に限定されるものではなく、導電性を有していればよいので、例えば金属基板や化合物半導体基板を使用してもよい。
また、本発明は、保護素子として、pn接合ダイオードを含む、IGFET、バイポーラトランジスタ、拡散抵抗のいずれかであってもよい。具体的には、IGFETの一方の主電極と活性層とのpn接合部にダイオードが形成されている。バイポーラトランジスタでは、エミッタ領域又はコレクタ領域とベース領域(活性層)とのpn接合部にダイオードが形成されている。拡散抵抗では、拡散抵抗と活性層とのpn接合部にダイオードが形成されている。
さらに、本発明は、2以上の素子、例えばダイオードとIGFETとを組み合わせて、又は拡散抵抗とIGFETとを組み合わせて保護素子を構築してもよい。
Claims (5)
- 導電性を有する支持基板上に絶縁層を介在して活性層が形成された基板の前記活性層に配設され、アノード領域とカソード領域とのpn接合ダイオードを含んで構成される保護素子と、
前記カソード領域と前記支持基板とを電気的に接続する接続手段と、
を備えた半導体装置。 - 前記接続手段は、前記支持基板の前記pn接合ダイオードに対向する領域の少なくとも一部と前記カソード領域とを電気的に接続している、又は前記支持基板の前記pn接合ダイオードの近傍の一部と前記カソード領域とを電気的に接続している請求項1に記載の半導体装置。
- 前記活性層の前記保護素子とは別の領域に、絶縁ゲート型電界効果トランジスタ、バイポーラトランジスタ、拡散抵抗、又は金属−絶縁体−半導体型容量のいずれかの半導体素子が配設されている請求項1又は請求項2に記載の半導体装置。
- 前記基板上に配設され、前記カソード領域に電気的に接続された外部端子と、
前記支持基板と電気的に接続され、前記基板を搭載するダイパッド又は配線基板と、
前記外部端子にワイヤを介して電気的に接続されたリードと、を備え、
前記接続手段は、前記リードと前記ダイパッド又は前記配線基板とを電気的に接続する経路を含んで構成されている請求項1〜請求項3のいずれか1項に記載の半導体装置。 - 前記接続手段は、
前記活性層の表面から前記支持基板へ至るトレンチと、
前記トレンチの側壁に配設された絶縁体と、
前記トレンチ内部に前記絶縁体を介して埋設された導電体と、を備え、
前記カソード領域と前記支持基板とを前記導電体を介して電気的に接続している請求項1〜請求項3のいずれか1項に記載の半導体装置。
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