JP2020009441A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020009441A5 JP2020009441A5 JP2019123601A JP2019123601A JP2020009441A5 JP 2020009441 A5 JP2020009441 A5 JP 2020009441A5 JP 2019123601 A JP2019123601 A JP 2019123601A JP 2019123601 A JP2019123601 A JP 2019123601A JP 2020009441 A5 JP2020009441 A5 JP 2020009441A5
- Authority
- JP
- Japan
- Prior art keywords
- memory
- address
- error
- memory address
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862692960P | 2018-07-02 | 2018-07-02 | |
| US62/692,960 | 2018-07-02 | ||
| US16/150,239 | 2018-10-02 | ||
| US16/150,239 US11151006B2 (en) | 2018-07-02 | 2018-10-02 | HBM RAS cache architecture |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020009441A JP2020009441A (ja) | 2020-01-16 |
| JP2020009441A5 true JP2020009441A5 (enExample) | 2022-07-08 |
| JP7252845B2 JP7252845B2 (ja) | 2023-04-05 |
Family
ID=69055272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019123601A Active JP7252845B2 (ja) | 2018-07-02 | 2019-07-02 | 高帯域幅メモリのｒａｓ（信頼性、アクセシビリティ、及びサービサビリティ）キャッシュ構造 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11151006B2 (enExample) |
| JP (1) | JP7252845B2 (enExample) |
| KR (1) | KR102420098B1 (enExample) |
| CN (2) | CN110673980B (enExample) |
| TW (1) | TWI768200B (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511017B (zh) * | 2018-04-02 | 2021-08-20 | 郑州云海信息技术有限公司 | 一种光媒介存储光媒介机构及系统 |
| US11151006B2 (en) * | 2018-07-02 | 2021-10-19 | Samsung Electronics Co., Ltd. | HBM RAS cache architecture |
| US10802967B1 (en) * | 2019-06-28 | 2020-10-13 | Intel Corporation | Partial write management in a multi-tiled compute engine |
| CN113495671B (zh) | 2020-04-01 | 2023-10-17 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
| EP3936996A4 (en) | 2020-04-01 | 2022-07-06 | Changxin Memory Technologies, Inc. | READ-WRITE METHOD AND STORAGE DEVICE |
| EP3964940A4 (en) | 2020-04-01 | 2022-08-17 | Changxin Memory Technologies, Inc. | READ/WRITE METHOD AND STORAGE DEVICE |
| EP3985494B1 (en) | 2020-04-01 | 2024-01-17 | Changxin Memory Technologies, Inc. | Read-write method and memory device |
| CN113495672B (zh) | 2020-04-01 | 2023-08-11 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
| EP3964941B1 (en) | 2020-04-01 | 2024-02-28 | Changxin Memory Technologies, Inc. | Read-write method and memory device |
| CN113495674B (zh) | 2020-04-01 | 2023-10-10 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
| CN113495675B (zh) | 2020-04-01 | 2023-08-11 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
| US12393344B2 (en) * | 2020-04-07 | 2025-08-19 | Micron Technology, Inc. | Apparatuses and methods for die replacement in stacked memory |
| KR102893029B1 (ko) | 2020-09-11 | 2025-11-27 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
| WO2022056757A1 (en) * | 2020-09-17 | 2022-03-24 | Alibaba Group Holding Limited | Three-dimensional stacked processing systems |
| US11573905B2 (en) * | 2021-01-21 | 2023-02-07 | Vmware, Inc. | Saving page retire information persistently across operating system reboots |
| KR20230166563A (ko) * | 2022-05-31 | 2023-12-07 | 삼성전자주식회사 | 작동 도중에 발생하는 메모리 고장을 실시간으로 리페어링하는 방법과 메모리 시스템, 및 메모리 시스템을 포함하는 데이터 처리 장치 |
| US12373361B2 (en) * | 2022-09-01 | 2025-07-29 | Advanced Micro Devices, Inc. | Systems, methods, and devices for advanced memory technology |
| US12019870B2 (en) | 2022-11-07 | 2024-06-25 | International Business Machines Corporation | System wide memory technology over-provisioning |
| CN119336694A (zh) * | 2023-07-21 | 2025-01-21 | 华为技术有限公司 | 一种芯片系统及通信设备 |
| US20250279153A2 (en) * | 2023-11-02 | 2025-09-04 | Micron Technology, Inc. | Sparing techniques in stacked memory architectures |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06139152A (ja) * | 1992-10-27 | 1994-05-20 | Kawasaki Steel Corp | 記憶装置用入出力回路 |
| JP3242890B2 (ja) * | 1998-12-16 | 2001-12-25 | 株式会社ハギワラシスコム | 記憶装置 |
| DE102004047813A1 (de) * | 2004-09-29 | 2006-03-30 | Infineon Technologies Ag | Halbleiterbaustein mit einer Umlenkschaltung |
| US20060080572A1 (en) | 2004-09-30 | 2006-04-13 | Fong John Y | Set associative repair cache systems and methods |
| JP2006323739A (ja) * | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | メモリモジュール、メモリシステム、及び情報機器 |
| US20070147115A1 (en) | 2005-12-28 | 2007-06-28 | Fong-Long Lin | Unified memory and controller |
| US7647536B2 (en) | 2005-12-30 | 2010-01-12 | Intel Corporation | Repair bits for a low voltage cache |
| US8898437B2 (en) | 2007-11-02 | 2014-11-25 | Qualcomm Incorporated | Predecode repair cache for instructions that cross an instruction cache line |
| US8756486B2 (en) | 2008-07-02 | 2014-06-17 | Micron Technology, Inc. | Method and apparatus for repairing high capacity/high bandwidth memory devices |
| US9042191B2 (en) | 2009-08-12 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-repairing memory |
| CN103620562A (zh) * | 2011-06-30 | 2014-03-05 | 惠普发展公司，有限责任合伙企业 | 包括用于将数据从活动存储器管芯拷贝至空闲存储器管芯的存储器模块拷贝引擎的存储器模块 |
| US8867286B2 (en) | 2011-12-20 | 2014-10-21 | Industrial Technology Research Institute | Repairable multi-layer memory chip stack and method thereof |
| CN103377143B (zh) * | 2012-04-27 | 2016-12-21 | 群联电子股份有限公司 | 存储器管理方法、存储器控制器与存储器存储装置 |
| US9230609B2 (en) * | 2012-06-05 | 2016-01-05 | Rambus Inc. | Memory bandwidth aggregation using simultaneous access of stacked semiconductor memory die |
| KR102025080B1 (ko) * | 2013-01-02 | 2019-09-25 | 삼성전자 주식회사 | 스토리지 시스템 및 스토리지 시스템의 여분 공간 조절 방법 |
| US9406403B2 (en) * | 2013-06-25 | 2016-08-02 | Advanced Micro Devices, Inc. | Spare memory external to protected memory |
| US9372750B2 (en) * | 2013-11-01 | 2016-06-21 | Qualcomm Incorporated | Method and apparatus for non-volatile RAM error re-mapping |
| US9535831B2 (en) | 2014-01-10 | 2017-01-03 | Advanced Micro Devices, Inc. | Page migration in a 3D stacked hybrid memory |
| JP6221762B2 (ja) * | 2014-01-16 | 2017-11-01 | 富士通株式会社 | 記憶装置、記憶方法及び制御装置 |
| US20160147667A1 (en) | 2014-11-24 | 2016-05-26 | Samsung Electronics Co., Ltd. | Address translation in memory |
| KR102190125B1 (ko) | 2014-12-05 | 2020-12-11 | 삼성전자주식회사 | 어드레스 리매핑을 위한 적층형 메모리 장치, 이를 포함하는 메모리 시스템 및 어드레스 리매핑 방법 |
| US9632867B2 (en) * | 2014-12-08 | 2017-04-25 | Cypress Semiconductor Corporation | Methods, circuits, devices, systems and machine executable code for reading from a non-volatile memory array |
| KR102538246B1 (ko) * | 2015-12-01 | 2023-06-01 | 삼성전자주식회사 | 불휘발성 메모리 모듈 |
| CN106055420B (zh) * | 2016-05-18 | 2019-07-16 | 东软医疗系统股份有限公司 | 一种数据校验方法、装置及设备 |
| US10395748B2 (en) * | 2016-06-15 | 2019-08-27 | Micron Technology, Inc. | Shared error detection and correction memory |
| KR102793137B1 (ko) | 2016-11-07 | 2025-04-10 | 삼성전자주식회사 | 어드레스 맵핑 테이블의 에러 정정을 수행하는 메모리 시스템 |
| US20180137005A1 (en) * | 2016-11-15 | 2018-05-17 | Intel Corporation | Increased redundancy in multi-device memory package to improve reliability |
| US11151006B2 (en) * | 2018-07-02 | 2021-10-19 | Samsung Electronics Co., Ltd. | HBM RAS cache architecture |
-
2018
- 2018-10-02 US US16/150,239 patent/US11151006B2/en active Active
-
2019
- 2019-04-03 KR KR1020190039290A patent/KR102420098B1/ko active Active
- 2019-04-16 TW TW108113273A patent/TWI768200B/zh active
- 2019-06-03 CN CN201910496617.XA patent/CN110673980B/zh active Active
- 2019-06-03 CN CN202411218767.1A patent/CN119356934A/zh active Pending
- 2019-07-02 JP JP2019123601A patent/JP7252845B2/ja active Active
-
2021
- 2021-10-12 US US17/499,852 patent/US12181987B2/en active Active
-
2024
- 2024-11-19 US US18/953,042 patent/US20250077370A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020009441A5 (enExample) | ||
| US20200142771A1 (en) | Error correction code decoders, semiconductor memory devices and memory systems | |
| KR101047241B1 (ko) | 메모리 디바이스 및 메모리 디바이스의 신뢰성, 가용성 및 서비스능력을 개선하기 위한 방법 및 시스템 | |
| JP5015177B2 (ja) | 同一のメモリタイプを用いてエラーチェックモード及び非エラーチェックモードをサポートするシステム、方法及び装置 | |
| US10459634B2 (en) | Methods, systems, and computer readable media for aggregating completion entries in a nonvolatile storage device | |
| EP2972876B1 (en) | Reduced uncorrectable memory errors | |
| JP5202130B2 (ja) | キャッシュメモリ、コンピュータシステム、及びメモリアクセス方法 | |
| JP2013182659A5 (ja) | メモリシステム | |
| US10824335B2 (en) | Device and method to store predicted data at a host memory | |
| US9361036B2 (en) | Correction of block errors for a system having non-volatile memory | |
| US11437115B2 (en) | Semiconductor memory devices and methods of operating semiconductor memory devices | |
| US8799744B2 (en) | Nonvolatile semiconductor memory and memory system | |
| WO2014149831A1 (en) | Apparatuses and methods for variable latency memory operations | |
| JP2008134736A (ja) | 電子機器 | |
| CN107810533A (zh) | 使用位线缺陷信息解码数据 | |
| US11556440B2 (en) | Memory module, memory system including the same and operation method thereof | |
| US20140095962A1 (en) | Semiconductor device and operating method thereof | |
| CN104704572A (zh) | 修复内存装置 | |
| US9304854B2 (en) | Semiconductor device and operating method thereof | |
| US9990302B2 (en) | Tag memory and cache system with automating tag comparison mechanism and cache method thereof | |
| KR102766654B1 (ko) | 반도체장치 및 반도체시스템 | |
| KR102466239B1 (ko) | 메모리 컨트롤러를 포함하는 메모리 시스템 및 그의 동작 방법 | |
| JP2009176094A (ja) | 転送装置、転送装置の制御方法及び情報処理装置 | |
| US10360105B2 (en) | Semiconductor devices and semiconductor systems including the same | |
| US10949348B2 (en) | Storage device and cache area addressing method |