TWI768200B - 儲存裝置以及多晶片系統 - Google Patents

儲存裝置以及多晶片系統 Download PDF

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Publication number
TWI768200B
TWI768200B TW108113273A TW108113273A TWI768200B TW I768200 B TWI768200 B TW I768200B TW 108113273 A TW108113273 A TW 108113273A TW 108113273 A TW108113273 A TW 108113273A TW I768200 B TWI768200 B TW I768200B
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memory
storage
address
data
storage address
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TW108113273A
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Chinese (zh)
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TW202006548A (zh
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牛迪民
克里希納 馬拉迪
鄭宏忠
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南韓商三星電子股份有限公司
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1064—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in cache or content addressable memories
    • G—PHYSICS
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    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
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    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
    • G06F11/2053—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements where persistent mass storage functionality or persistent mass storage control functionality is redundant
    • G06F11/2094—Redundant storage or storage space
    • G—PHYSICS
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    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G—PHYSICS
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    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1678—Details of memory controller using bus width
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    • G06—COMPUTING OR CALCULATING; COUNTING
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    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
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    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0635—Configuration or reconfiguration of storage systems by changing the path, e.g. traffic rerouting, path reconfiguration
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    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/82—Solving problems relating to consistency
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/885—Monitoring specific for caches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0409—Online test
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Hardware Redundancy (AREA)
  • Detection And Correction Of Errors (AREA)
  • Memory System (AREA)
  • Debugging And Monitoring (AREA)
TW108113273A 2018-07-02 2019-04-16 儲存裝置以及多晶片系統 TWI768200B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862692960P 2018-07-02 2018-07-02
US62/692,960 2018-07-02
US16/150,239 2018-10-02
US16/150,239 US11151006B2 (en) 2018-07-02 2018-10-02 HBM RAS cache architecture

Publications (2)

Publication Number Publication Date
TW202006548A TW202006548A (zh) 2020-02-01
TWI768200B true TWI768200B (zh) 2022-06-21

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US (3) US11151006B2 (enExample)
JP (1) JP7252845B2 (enExample)
KR (1) KR102420098B1 (enExample)
CN (2) CN110673980B (enExample)
TW (1) TWI768200B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108511017B (zh) * 2018-04-02 2021-08-20 郑州云海信息技术有限公司 一种光媒介存储光媒介机构及系统
US11151006B2 (en) * 2018-07-02 2021-10-19 Samsung Electronics Co., Ltd. HBM RAS cache architecture
US10802967B1 (en) * 2019-06-28 2020-10-13 Intel Corporation Partial write management in a multi-tiled compute engine
CN113495671B (zh) 2020-04-01 2023-10-17 长鑫存储技术有限公司 读写方法及存储器装置
EP3936996A4 (en) 2020-04-01 2022-07-06 Changxin Memory Technologies, Inc. READ-WRITE METHOD AND STORAGE DEVICE
EP3964940A4 (en) 2020-04-01 2022-08-17 Changxin Memory Technologies, Inc. READ/WRITE METHOD AND STORAGE DEVICE
EP3985494B1 (en) 2020-04-01 2024-01-17 Changxin Memory Technologies, Inc. Read-write method and memory device
CN113495672B (zh) 2020-04-01 2023-08-11 长鑫存储技术有限公司 读写方法及存储器装置
EP3964941B1 (en) 2020-04-01 2024-02-28 Changxin Memory Technologies, Inc. Read-write method and memory device
CN113495674B (zh) 2020-04-01 2023-10-10 长鑫存储技术有限公司 读写方法及存储器装置
CN113495675B (zh) 2020-04-01 2023-08-11 长鑫存储技术有限公司 读写方法及存储器装置
US12393344B2 (en) * 2020-04-07 2025-08-19 Micron Technology, Inc. Apparatuses and methods for die replacement in stacked memory
KR102893029B1 (ko) 2020-09-11 2025-11-27 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
WO2022056757A1 (en) * 2020-09-17 2022-03-24 Alibaba Group Holding Limited Three-dimensional stacked processing systems
US11573905B2 (en) * 2021-01-21 2023-02-07 Vmware, Inc. Saving page retire information persistently across operating system reboots
KR20230166563A (ko) * 2022-05-31 2023-12-07 삼성전자주식회사 작동 도중에 발생하는 메모리 고장을 실시간으로 리페어링하는 방법과 메모리 시스템, 및 메모리 시스템을 포함하는 데이터 처리 장치
US12373361B2 (en) * 2022-09-01 2025-07-29 Advanced Micro Devices, Inc. Systems, methods, and devices for advanced memory technology
US12019870B2 (en) 2022-11-07 2024-06-25 International Business Machines Corporation System wide memory technology over-provisioning
CN119336694A (zh) * 2023-07-21 2025-01-21 华为技术有限公司 一种芯片系统及通信设备
US20250279153A2 (en) * 2023-11-02 2025-09-04 Micron Technology, Inc. Sparing techniques in stacked memory architectures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140376320A1 (en) * 2013-06-25 2014-12-25 Advanced Micro Devices, Inc. Spare memory external to protected memory
US20150199246A1 (en) * 2014-01-16 2015-07-16 Fujitsu Limited Memory device, storage method and control device
CN106055420A (zh) * 2016-05-18 2016-10-26 沈阳东软医疗系统有限公司 一种数据校验方法、装置及设备

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06139152A (ja) * 1992-10-27 1994-05-20 Kawasaki Steel Corp 記憶装置用入出力回路
JP3242890B2 (ja) * 1998-12-16 2001-12-25 株式会社ハギワラシスコム 記憶装置
DE102004047813A1 (de) * 2004-09-29 2006-03-30 Infineon Technologies Ag Halbleiterbaustein mit einer Umlenkschaltung
US20060080572A1 (en) 2004-09-30 2006-04-13 Fong John Y Set associative repair cache systems and methods
JP2006323739A (ja) * 2005-05-20 2006-11-30 Renesas Technology Corp メモリモジュール、メモリシステム、及び情報機器
US20070147115A1 (en) 2005-12-28 2007-06-28 Fong-Long Lin Unified memory and controller
US7647536B2 (en) 2005-12-30 2010-01-12 Intel Corporation Repair bits for a low voltage cache
US8898437B2 (en) 2007-11-02 2014-11-25 Qualcomm Incorporated Predecode repair cache for instructions that cross an instruction cache line
US8756486B2 (en) 2008-07-02 2014-06-17 Micron Technology, Inc. Method and apparatus for repairing high capacity/high bandwidth memory devices
US9042191B2 (en) 2009-08-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Self-repairing memory
CN103620562A (zh) * 2011-06-30 2014-03-05 惠普发展公司，有限责任合伙企业 包括用于将数据从活动存储器管芯拷贝至空闲存储器管芯的存储器模块拷贝引擎的存储器模块
US8867286B2 (en) 2011-12-20 2014-10-21 Industrial Technology Research Institute Repairable multi-layer memory chip stack and method thereof
CN103377143B (zh) * 2012-04-27 2016-12-21 群联电子股份有限公司 存储器管理方法、存储器控制器与存储器存储装置
US9230609B2 (en) * 2012-06-05 2016-01-05 Rambus Inc. Memory bandwidth aggregation using simultaneous access of stacked semiconductor memory die
KR102025080B1 (ko) * 2013-01-02 2019-09-25 삼성전자 주식회사 스토리지 시스템 및 스토리지 시스템의 여분 공간 조절 방법
US9372750B2 (en) * 2013-11-01 2016-06-21 Qualcomm Incorporated Method and apparatus for non-volatile RAM error re-mapping
US9535831B2 (en) 2014-01-10 2017-01-03 Advanced Micro Devices, Inc. Page migration in a 3D stacked hybrid memory
US20160147667A1 (en) 2014-11-24 2016-05-26 Samsung Electronics Co., Ltd. Address translation in memory
KR102190125B1 (ko) 2014-12-05 2020-12-11 삼성전자주식회사 어드레스 리매핑을 위한 적층형 메모리 장치, 이를 포함하는 메모리 시스템 및 어드레스 리매핑 방법
US9632867B2 (en) * 2014-12-08 2017-04-25 Cypress Semiconductor Corporation Methods, circuits, devices, systems and machine executable code for reading from a non-volatile memory array
KR102538246B1 (ko) * 2015-12-01 2023-06-01 삼성전자주식회사 불휘발성 메모리 모듈
US10395748B2 (en) * 2016-06-15 2019-08-27 Micron Technology, Inc. Shared error detection and correction memory
KR102793137B1 (ko) 2016-11-07 2025-04-10 삼성전자주식회사 어드레스 맵핑 테이블의 에러 정정을 수행하는 메모리 시스템
US20180137005A1 (en) * 2016-11-15 2018-05-17 Intel Corporation Increased redundancy in multi-device memory package to improve reliability
US11151006B2 (en) * 2018-07-02 2021-10-19 Samsung Electronics Co., Ltd. HBM RAS cache architecture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140376320A1 (en) * 2013-06-25 2014-12-25 Advanced Micro Devices, Inc. Spare memory external to protected memory
US20150199246A1 (en) * 2014-01-16 2015-07-16 Fujitsu Limited Memory device, storage method and control device
CN106055420A (zh) * 2016-05-18 2016-10-26 沈阳东软医疗系统有限公司 一种数据校验方法、装置及设备

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CN110673980A (zh) 2020-01-10
CN119356934A (zh) 2025-01-24
US11151006B2 (en) 2021-10-19
KR20200003709A (ko) 2020-01-10
JP2020009441A (ja) 2020-01-16
US20220035719A1 (en) 2022-02-03
US20250077370A1 (en) 2025-03-06
CN110673980B (zh) 2024-09-20
JP7252845B2 (ja) 2023-04-05
TW202006548A (zh) 2020-02-01
US12181987B2 (en) 2024-12-31
US20200004652A1 (en) 2020-01-02
KR102420098B1 (ko) 2022-07-12

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