JP2019530801A - スパッタリングシャワーヘッド - Google Patents
スパッタリングシャワーヘッド Download PDFInfo
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- JP2019530801A JP2019530801A JP2019515490A JP2019515490A JP2019530801A JP 2019530801 A JP2019530801 A JP 2019530801A JP 2019515490 A JP2019515490 A JP 2019515490A JP 2019515490 A JP2019515490 A JP 2019515490A JP 2019530801 A JP2019530801 A JP 2019530801A
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- sputtering
- showerhead assembly
- face plate
- backing plate
- layer
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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Abstract
Description
Claims (15)
- 堆積チャンバであって、
チャンバ本体と、
スパッタリングシャワーヘッドアセンブリとを備え、前記スパッタリングシャワーヘッドアセンブリが、
面板であって、
ターゲット材料を備えたスパッタリング表面、及び
前記スパッタリング表面の反対側の第2の表面を備え、
前記スパッタリング表面から前記第2の表面へ複数のガス通路が延在する、面板、
前記面板の前記第2の表面に隣接して位置決めされたバッキング板であって、
第1の表面、及び
前記第1の表面の反対側の第2の表面を備え、
プレナムが、前記バッキング板の前記第1の表面と前記面板の前記第2の表面とによって画定される、バッキング板、並びに
前記バッキング板の前記第2の表面に沿って位置決めされた1以上のマグネトロンを備え、前記堆積チャンバが更に、
前記スパッタリングシャワーヘッドアセンブリの下方に配置された基板支持体を備え、
前記チャンバ本体と前記スパッタリングシャワーヘッドアセンブリとが、内部空間を画定する、堆積チャンバ。 - 前記ターゲット材料が、ニッケル、クロム、アルミニウム、銅、タンタル、窒化タンタル、炭化タンタル、タングステン、窒化タングステン、チタン、それらの合金、及びそれらの組み合わせから成る群から選択される、請求項1に記載の堆積チャンバ。
- 前記複数のガス通路が、前記面板の表面エリアにわたり均一に分布している、請求項1に記載の堆積チャンバ。
- 前記面板が、RF電源に接続されている、請求項1に記載の堆積チャンバ。
- 前記基板支持体が、RF電源に接続されている、請求項4に記載の堆積チャンバ。
- 可動ライナを更に備え、前記可動ライナが、前記スパッタリングシャワーヘッドアセンブリと接触して、前記内部空間内でプラズマ生成領域を画定する、請求項1に記載の堆積チャンバ。
- 前記面板が凹部を有し、前記プレナムが、前記凹部と前記バッキング板の前記第1の表面とによって画定される、請求項1に記載の堆積チャンバ。
- 前記プレナムが、前記内部空間の上方に位置決めされ、前記複数のガス通路を介して前記内部空間と流体連結している、請求項7に記載の堆積チャンバ。
- 基板を基板支持体上に位置決めすること、
スパッタリングシャワーヘッドアセンブリの面板を通して内部空間の中へ前駆体流体を流し、前記基板上に第1の層を堆積させることであって、前記内部空間が前記スパッタリングシャワーヘッドアセンブリと前記基板支持体との間に配置されている、前記基板上に第1の層を堆積させること、及び
前記スパッタリングシャワーヘッドアセンブリの前記面板から1以上の金属をスパッタリングして、前記第1の層の上に第2の層を堆積させることを含む、方法。 - 前記第1の層が酸化物である、請求項9に記載の方法。
- 前記第2の層が金属含有層である、請求項10に記載の方法。
- 前記スパッタリングシャワーヘッドアセンブリの前記面板を通して前記内部空間の中へ前記前駆体流体を流した後で、且つ、前記面板から前記1以上の金属をスパッタリングする前に、前記内部空間を排気することを更に含む、請求項9に記載の方法。
- 前記スパッタリングシャワーヘッドアセンブリの前記面板を通して前記内部空間の中へ前記前駆体流体を流すこと、及び、前記面板から前記1以上の金属をスパッタリングすること、を繰り返すことを更に含む、請求項9に記載の方法。
- 前記スパッタリングシャワーヘッドアセンブリが、
面板であって、
ターゲット材料を備えた前記面板のスパッタリング表面、及び
前記スパッタリング表面の反対側の前記面板の第2の表面を備え、
前記面板の前記スパッタリング表面から前記面板の前記第2の表面へ複数のガス通路が延在する、面板、
前記面板の前記第2の表面に隣接して位置決めされたバッキング板であって、
前記バッキング板の第1の表面、及び
前記バッキング板の前記第1の表面の反対側の前記バッキング板の第2の表面を備え、
プレナムが、前記バッキング板の前記第1の表面と前記面板の前記第2の表面とによって画定される、バッキング板、並びに
前記バッキング板の前記第2の表面に沿って位置決めされた1以上のマグネトロンを備える、請求項9に記載の方法。 - 前記ターゲット材料が、ニッケル、クロム、アルミニウム、銅、タンタル、窒化タンタル、炭化タンタル、タングステン、窒化タングステン、チタン、それらの合金、及びそれらの組み合わせから成る群から選択される、請求項14の方法。
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