JP2019525448A - 透明圧電デバイス及び同デバイスを製造するための方法 - Google Patents
透明圧電デバイス及び同デバイスを製造するための方法 Download PDFInfo
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- JP2019525448A JP2019525448A JP2018558674A JP2018558674A JP2019525448A JP 2019525448 A JP2019525448 A JP 2019525448A JP 2018558674 A JP2018558674 A JP 2018558674A JP 2018558674 A JP2018558674 A JP 2018558674A JP 2019525448 A JP2019525448 A JP 2019525448A
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- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims description 31
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 238000003980 solgel method Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 79
- 239000000463 material Substances 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- 239000010445 mica Substances 0.000 description 5
- 229910052618 mica group Inorganic materials 0.000 description 5
- 239000002070 nanowire Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 241000490025 Schefflera digitata Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
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- H10N30/708—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/206—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using only longitudinal or thickness displacement, e.g. d33 or d31 type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead based oxides
- H10N30/8554—Lead zirconium titanate based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
Claims (14)
- 透明圧電デバイス(2)であって:
・透明基板(4)と;
・透明圧電層(6)と;
・交互嵌合型電極の透明層(8)と;
を備え、
前記圧電層(6)は、前記基板(4)と前記交互嵌合型電極の透明層(8)との間に配置される、透明圧電デバイス(2)において;
前記デバイスは、前記基板(4)と前記圧電層(6)との間に透明誘電層(10)を更に備え、前記誘電層(10)は、1nmと30nmとの間で構成される厚さを有することを特徴とする、透明圧電デバイス(2)。 - 請求項1に記載のデバイス(2)であって、
前記透明圧電層(6)は均一な堆積層である、デバイス(2)。 - 請求項1又は2に記載のデバイス(2)であって、
交互嵌合型電極の前記透明層(8)は、2つの同一平面内の電極(81)を備え、各電極は、交互嵌合される複数の指部(82)を有する、デバイス(2)。 - 請求項1から請求項3のいずれか一項に記載のデバイス(2)であって、
前記圧電層(6)は、前記透明基板の(4)の表面の少なくとも10%、好ましくは少なくとも50%、より好ましくは少なくとも70%を覆う、デバイス(2)。 - 請求項1から請求項4のいずれか一項に記載のデバイス(2)であって、
電極の前記透明層(8)は、導電性の透明金属酸化物を備える、デバイス(2)。 - 請求項1から請求項5のいずれか一項に記載のデバイス(2)であって、
前記基板(4)は、溶融石英ウェーハ又はガラス基板である、デバイス(2)。 - 請求項1から請求項6のいずれか一項に記載のデバイス(2)であって、
前記圧電層(6)は、10μm未満の厚さ、好ましくは0.1μmよりも大きな、且つ/又は2μmよりも小さな厚さを有する、デバイス(2)。 - 請求項1から請求項7のいずれか一項に記載のデバイス(2)であって、
前記誘電層(10)は、20nmよりも小さな厚さを有する、デバイス(2)。 - 透明圧電デバイスを生産するための方法であって:
前記方法は、
・透明基板を提供するステップ(100)と;
・前記透明基板上に透明圧電層を堆積させるステップ(102)と;
前記透明基板上に交互嵌合型電極の透明層を堆積させるステップ(104)と;
を備え、
透明圧電層を堆積させる前記ステップ(102)は、交互嵌合型電極の透明層を堆積させる前記ステップ(104)の前に実施される、方法において;
前記方法は、前記透明基板上に透明圧電層を堆積させる前記ステップ(102)の前に、前記透明基板上に透明誘電層を堆積させるステップを更に備え、前記誘電層は、1nmと30nmとの間で構成される厚さを有することを特徴とする、方法。 - 請求項9に記載の方法であって、
前記デバイスは、請求項1から請求項8のいずれか一項に記載のものである、方法。 - 請求項9又は請求項10に記載の方法であって、
透明圧電層を堆積させる前記ステップ(102)は、スピンコーティング及びゾル−ゲル法によって実施される、方法。 - 請求項9から請求項11のいずれか一項に記載の方法であって、
交互嵌合型電極の透明層を堆積させる前記ステップ(104)は、原子層堆積とリフトオフ・リソグラフィとによって、及び/又は、原子層堆積とリソグラフィ及びエッチングとによって実施される、方法。 - 請求項11に記載の方法であって、
前記ゾル−ゲル法は、次の連続したステップである:
・乾燥させるステップと;
・熱分解するステップと;
・結晶化させるステップと;
を備える、方法。 - 請求項11又は請求項13に記載の方法であって、
前記スピンコーティングと、前記乾燥させるステップ及び前記熱分解するステップとは、3回繰り返される、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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LU93084A LU93084B1 (en) | 2016-05-24 | 2016-05-24 | Transparent piezoelectric device and method for manufacturing the same |
LULU93084 | 2016-05-24 | ||
PCT/EP2017/061757 WO2017202652A1 (en) | 2016-05-24 | 2017-05-16 | Transparent piezoelectric device and method for manufacturing the same |
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JP2019525448A true JP2019525448A (ja) | 2019-09-05 |
JP7054926B2 JP7054926B2 (ja) | 2022-04-15 |
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Country Status (7)
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US (1) | US20190296216A1 (ja) |
EP (1) | EP3465782B1 (ja) |
JP (1) | JP7054926B2 (ja) |
KR (1) | KR102432431B1 (ja) |
CN (1) | CN109155357A (ja) |
LU (1) | LU93084B1 (ja) |
WO (1) | WO2017202652A1 (ja) |
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CN108597875B (zh) * | 2018-04-03 | 2020-10-30 | 湘潭大学 | 一种透明柔性全氧化物异质外延铁电薄膜及其制备方法 |
LU101605B1 (en) | 2020-01-23 | 2021-08-09 | Luxembourg Inst Science & Tech List | Passivated transparent piezoelectric device with high transparency and high breakdown voltage |
DE102020115315B4 (de) | 2020-06-09 | 2022-05-05 | Tdk Electronics Ag | Piezoelektrische Baugruppe und Prozess zum Bilden einer piezoelektrischen Baugruppe |
LU102421B1 (en) * | 2021-01-15 | 2022-07-18 | Luxembourg Inst Science & Tech List | Material deposition method and microsystem therewith obtained |
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- 2017-05-16 CN CN201780032446.4A patent/CN109155357A/zh active Pending
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Also Published As
Publication number | Publication date |
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KR20190011278A (ko) | 2019-02-01 |
LU93084B1 (en) | 2017-12-22 |
CN109155357A (zh) | 2019-01-04 |
JP7054926B2 (ja) | 2022-04-15 |
WO2017202652A1 (en) | 2017-11-30 |
EP3465782A1 (en) | 2019-04-10 |
US20190296216A1 (en) | 2019-09-26 |
EP3465782B1 (en) | 2020-02-12 |
KR102432431B1 (ko) | 2022-08-12 |
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