JP2019521513A - ラップアラウンドコンタクトを形成する方法および半導体デバイス - Google Patents
ラップアラウンドコンタクトを形成する方法および半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 310
- 238000000034 method Methods 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 125000006850 spacer group Chemical group 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 16
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 30
- 239000000758 substrate Substances 0.000 description 21
- 238000005240 physical vapour deposition Methods 0.000 description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 14
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000002135 nanosheet Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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Abstract
Description
図1は、本発明の例示的な態様による、ラップアラウンドコンタクトを形成する方法100を示す。
図30は、本発明の別の例示的な態様による、ラップアラウンドコンタクトを形成する方法1600を示す。
Claims (19)
- 複数のフィン構造上に複数の半導体層を形成するステップと、
前記複数の半導体層上に犠牲ゲートを形成するステップと、
前記複数のフィン構造上および前記複数の半導体層の側壁上にエピタキシャル層を形成するステップと、
前記犠牲ゲートおよび前記複数の半導体層を金属層に置き換えることによってゲート構造を形成するステップと、
前記エピタキシャル層上にラップアラウンドコンタクトを形成するステップと
を含む、ラップアラウンドコンタクトを形成する方法。 - 前記方法は、前記複数のフィン構造の間に複数のシャロートレンチアイソレーション(STI)領域を形成するステップをさらに含み、前記ラップアラウンドコンタクトは、前記STI領域上に形成される、請求項1に記載の方法。
- 前記ゲート構造を形成する前記ステップは、複数のゲート構造を形成するステップを含む、請求項1または2に記載の方法。
- 前記ゲート構造は、前記金属層の側面上に形成されているスペーサを備え、前記ラップアラウンドコンタクトを形成する前記ステップは、前記スペーサ上、および、前記複数のゲート構造の間の前記エピタキシャル層上に前記ラップアラウンドコンタクトを形成するステップを含む、請求項3に記載の方法。
- 前記ラップアラウンドコンタクトを形成する前記ステップは、
共形の金属ライナ層を形成するステップと、
前記金属ライナ層上にバリア層を形成するステップと
を含む、請求項1ないし4のいずれかに記載の方法。 - 前記ラップアラウンドコンタクトを形成する前記ステップは、金属シリサイド層を形成するために前記金属ライナ層をアニーリングするステップを含み、前記ラップアラウンドコンタクトは、前記金属シリサイド層および前記バリア層を含む、請求項5に記載の方法。
- 前記バリア層上に金属充填層を形成するステップをさらに含む、請求項6に記載の方法。
- 前記エピタキシャル層を形成する前記ステップは、共形の高濃度ドープエピタキシャル薄膜を形成するステップを含む、請求項1ないし7のいずれかに記載の方法。
- 前記エピタキシャル層上に犠牲層を形成するステップと、
前記犠牲層上にライナ層を形成するステップと、
前記ライナ層上に酸化物層を形成するステップと、
前記酸化物層を研磨するステップと
をさらに含む、請求項1ないし8のいずれかに記載の方法。 - 前記犠牲層はゲルマニウムを含み、前記ライナ層は窒化ケイ素を含み、前記酸化物層はチタニア−シリカ酸化物を含む、請求項9に記載の方法。
- 複数の他の半導体層を、前記複数の半導体層と交互に形成するステップをさらに含む、請求項1ないし10のいずれかに記載の方法。
- 前記半導体層を前記置き換えることは、前記犠牲ゲートを除去し、前記他の半導体層の間から前記半導体層を除去するために、エッチングを実施することを含む、請求項11に記載の方法。
- 前記複数のフィン構造上および前記複数の半導体層の側壁上にエピタキシャル層を形成する前記ステップは、前記複数のフィン構造上および前記複数の半導体層の側壁上にファセットエピタキシャル層を形成するステップを含み、
前記エピタキシャル層上にラップアラウンドコンタクトを形成するステップは、前記ファセットエピタキシャル層上にラップアラウンドコンタクトを形成するステップを含む、請求項1ないし12のいずれかに記載の方法。 - 前記ゲート構造を形成する前記ステップは、複数のゲート構造を形成するステップを含み、前記ゲート構造は、前記金属層の側面上に形成されているスペーサを備え、前記ラップアラウンドコンタクトを形成する前記ステップは、前記スペーサ上、および、前記複数のゲート構造の間の前記ファセットエピタキシャル層上に前記ラップアラウンドコンタクトを形成するステップを含む、請求項13に記載の方法。
- 前記ファセットエピタキシャル層を形成する前記ステップは、共形の高濃度ドープファセットエピタキシャル薄膜を形成するステップを含む、請求項13または14に記載の方法。
- 前記ファセットエピタキシャル層上に犠牲層を形成するステップと、
前記犠牲層上にライナ層を形成するステップと、
前記ライナ層上に酸化物層を形成するステップと、
前記酸化物層を研磨するステップと
をさらに含む、請求項13ないし15のいずれかに記載の方法。 - 複数のフィン構造の間に複数のシャロートレンチアイソレーション(STI)領域を形成するステップと、
前記複数のフィン構造上に複数の半導体層および複数の他の半導体層を交互に形成するステップと、
前記複数の半導体層および前記複数の他の半導体層上に複数の犠牲ゲートを形成するステップと、
前記複数のフィン構造上ならびに前記複数の半導体層の側壁および前記複数の他の半導体層の側壁上に共形の高濃度ドープエピタキシャル層を形成するステップと、
前記犠牲ゲートおよび前記複数の半導体層を金属層に置き換えることによって、複数のゲート構造を形成するステップであって、前記ゲート構造は、前記金属層の側面上に形成されるスペーサを備え、前記半導体層を前記置き換えることは、前記犠牲ゲートを除去し、前記他の半導体層の間から前記半導体層を除去するために、エッチングを実施することを含む、複数のゲート構造を形成するステップと、
前記エピタキシャル層上にラップアラウンドコンタクトを形成するステップであって、前記ラップアラウンドコンタクトは、前記STI領域上、前記スペーサ上および前記複数のゲート構造の間の前記エピタキシャル層上に形成され、前記ラップアラウンドコンタクトを形成する前記ステップは、
共形の金属ライナ層を形成するステップと、
前記金属ライナ層上にバリア層を形成するステップと、
金属シリサイド層を形成するために前記金属ライナ層をアニーリングするステップであり、前記ラップアラウンドコンタクトは、前記金属シリサイド層および前記バリア層を含む、アニーリングするステップと
を含む、ラップアラウンドコンタクトを形成するステップと
を含む、ラップアラウンドコンタクトを形成する方法。 - 複数のフィン構造上に形成されている複数の半導体層と、
前記複数のフィン構造上および前記複数の半導体層の側壁上に形成されているエピタキシャル層と、
前記複数の半導体層上に形成されているゲート構造と、
前記エピタキシャル層上に形成されているラップアラウンドコンタクトと
を備える、半導体デバイス。 - 前記エピタキシャル層がファセットエピタキシャル層である、請求項18に記載の半導体デバイス。
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