JP2019519070A - マイクロバッテリの簡略化された気密性パッケージング - Google Patents
マイクロバッテリの簡略化された気密性パッケージング Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 238
- 239000002184 metal Substances 0.000 claims abstract description 238
- 239000000463 material Substances 0.000 claims abstract description 74
- 238000007789 sealing Methods 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 131
- 239000000758 substrate Substances 0.000 claims description 73
- 239000004065 semiconductor Substances 0.000 claims description 49
- 229920000642 polymer Polymers 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 23
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 18
- 239000010405 anode material Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 239000011800 void material Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- 238000005304 joining Methods 0.000 claims description 4
- 229910000846 In alloy Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000000059 patterning Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- -1 for example Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M10/0436—Small-sized flat cells or batteries for portable equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/10—Primary casings; Jackets or wrappings
- H01M50/102—Primary casings; Jackets or wrappings characterised by their shape or physical structure
- H01M50/107—Primary casings; Jackets or wrappings characterised by their shape or physical structure having curved cross-section, e.g. round or elliptic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M2220/00—Batteries for particular applications
- H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Sealing Battery Cases Or Jackets (AREA)
- Connection Of Batteries Or Terminals (AREA)
Abstract
【解決手段】本出願によれば、金属シール層が、アノード側に位置する各金属アノード構造の外周まわりに形成され、次いで金属シーリング層が、カソード側にある壁構造のはんだ付け可能金属層に接合される。壁構造は、金属集電構造を露出させる空隙を含有する。空隙は、バッテリ材料で充填される。
【選択図】図13
Description
Claims (20)
- 気密シール壁構造によって金属アノード構造から間隔を空けられた金属集電構造を備え、前記気密シール壁構造が、前記金属集電構造と前記金属アノード構造との間に空隙を画定するとともに、前記金属アノード構造の表面と直接接触する金属シーリング層を含有する、マイクロバッテリ。
- 前記気密シール壁構造が、
前記金属シーリング層と直接接触するはんだ付け結合部と、
前記はんだ付け結合部と直接的に物理接触するエッチング・マスクと、
前記エッチング・マスクと直接接触する半導体材料と、
前記半導体材料と直接接触する第1の表面、および前記第1の表面の反対側にある、前記金属集電構造の表面と直接接触する第2の表面を有する、絶縁材料と
をさらに含む、請求項1に記載のマイクロバッテリ。 - 前記エッチング・マスクが、窒化ケイ素または酸化ケイ素を含む、請求項2に記載のマイクロバッテリ。
- 前記金属アノード構造が、少なくとも導電性金属アノード材料を含む、請求項1ないし3のいずれかに記載のマイクロバッテリ。
- 前記金属アノード構造が、金属ベース、金属はんだ、および導電性金属アノード材料を含む、請求項4に記載のマイクロバッテリ。
- 前記金属アノード構造が、光画像化ポリマー、導電性パッド、および導電性金属アノード材料を含み、
前記導電性パッドの少なくとも一部分が、前記光画像化ポリマーに埋め込まれている、請求項1ないし5のいずれかに記載のマイクロバッテリ。 - 前記金属集電構造が導電性金属材料を含む、請求項1ないし6のいずれかに記載のマイクロバッテリ。
- 金属シード層が、前記金属アノード構造の別の表面上に位置する、請求項1ないし7のいずれかに記載のマイクロバッテリ。
- 前記空隙がバッテリ材料を含有する、請求項1ないし8のいずれかに記載のマイクロバッテリ。
- 前記金属シーリング層が、インジウムまたはインジウムの合金を含む、請求項1ないし9のいずれかに記載のマイクロバッテリ。
- 前記金属シーリング層がリング形である、請求項1ないし10のいずれかに記載のマイクロバッテリ。
- ハンドラ基板、リリース層、および少なくとも1つの金属アノード構造を含む第1の構造を設けることであって、金属シーリング層が各金属アノード構造の表面上に位置する、前記設けることと、
別のハンドル基板、ポリマー接着剤、および前記ポリマー接着剤に埋め込まれた、少なくとも1つの金属集電構造を含む、第2の構造を設けることであって、空隙を有する壁構造が、各金属集電構造の表面上に位置し、前記壁構造が、はんだ付け可能金属を含む、前記設けることと、
前記第1の構造の前記金属シーリング層を各壁構造の前記はんだ付け可能金属に接合することと、
前記ハンドラ基板、前記別のハンドラ基板、前記リリース層、および前記ポリマー接着剤層を除去して、少なくとも1つのマイクロバッテリを提供することと
を含む、マイクロバッテリを形成する方法。 - 前記接合することの前に、前記空隙がバッテリ材料で充填される、請求項12に記載の方法。
- 前記金属シーリング層がインジウムまたはインジウムの合金を含む、請求項12または13に記載の方法。
- 前記金属アノード構造が、少なくとも導電性金属アノード材料を含む、請求項12ないし14のいずれかに記載の方法。
- 前記金属アノード構造が、金属ベース、金属はんだ、および導電性金属アノード材料を含む、請求項12ないし15のいずれかに記載の方法。
- 前記金属アノード構造が、光画像化ポリマー、導電性パッド、導電性金属アノード材料を含み、前記導電性パッドの少なくとも一部分が、光画像化ポリマー中に埋め込まれている、請求項12ないし16のいずれかに記載の方法。
- 前記接合することが、はんだ付け工程を含む、請求項12ないし17のいずれかに記載の方法。
- 前記ハンドラ基板、前記別のハンドラ基板、前記リリース層、および前記ポリマー接着剤層を前記除去することが、少なくとも1つのレーザ焼灼工程を含む、請求項12ないし18のいずれかに記載の方法。
- 前記金属シーリング層が、リング形である、請求項12ないし19のいずれかに記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201662333523P | 2016-05-09 | 2016-05-09 | |
US62/333,523 | 2016-05-09 | ||
US15/416,564 | 2017-01-26 | ||
US15/416,564 US11362382B2 (en) | 2016-05-09 | 2017-01-26 | Simplified hermetic packaging of a micro-battery |
PCT/IB2017/052411 WO2017195058A1 (en) | 2016-05-09 | 2017-04-26 | Simplified hermetic packaging of a micro-battery |
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JP2019519070A true JP2019519070A (ja) | 2019-07-04 |
JP6887444B2 JP6887444B2 (ja) | 2021-06-16 |
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US (2) | US11362382B2 (ja) |
JP (1) | JP6887444B2 (ja) |
CN (1) | CN109075375B (ja) |
WO (1) | WO2017195058A1 (ja) |
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US10637101B2 (en) * | 2017-05-03 | 2020-04-28 | International Business Machines Corporation | Miniaturized electronics package with patterned thin film solid state battery |
US10505160B2 (en) * | 2017-06-26 | 2019-12-10 | International Business Machines Corporation | Micro-battery using glass package |
US11522243B2 (en) * | 2020-12-21 | 2022-12-06 | International Business Machines Corporation | Hermetic packaging of a micro-battery device |
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- 2017-04-26 JP JP2018558760A patent/JP6887444B2/ja active Active
- 2017-04-26 CN CN201780027749.7A patent/CN109075375B/zh active Active
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KI BANG LEE ET AL.: "Electrolyte-Based On-Demand and Disposable Microbattery", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, vol. 12, no. 6, JPN6020033931, 2003, pages 840 - 847, XP001200220, ISSN: 0004342126, DOI: 10.1109/JMEMS.2003.820272 * |
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WO2017195058A1 (en) | 2017-11-16 |
CN109075375A (zh) | 2018-12-21 |
US20180069202A1 (en) | 2018-03-08 |
US20170324068A1 (en) | 2017-11-09 |
JP6887444B2 (ja) | 2021-06-16 |
US11362382B2 (en) | 2022-06-14 |
US11411272B2 (en) | 2022-08-09 |
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