JP2019517017A5 - - Google Patents

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Publication number
JP2019517017A5
JP2019517017A5 JP2018552155A JP2018552155A JP2019517017A5 JP 2019517017 A5 JP2019517017 A5 JP 2019517017A5 JP 2018552155 A JP2018552155 A JP 2018552155A JP 2018552155 A JP2018552155 A JP 2018552155A JP 2019517017 A5 JP2019517017 A5 JP 2019517017A5
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JP
Japan
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target
design
pitch
hybrid
hybrid periodic
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JP2018552155A
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English (en)
Japanese (ja)
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JP6952711B2 (ja
JP2019517017A (ja
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Priority claimed from PCT/US2016/060626 external-priority patent/WO2017176314A1/en
Publication of JP2019517017A publication Critical patent/JP2019517017A/ja
Publication of JP2019517017A5 publication Critical patent/JP2019517017A5/ja
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JP2018552155A 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット Active JP6952711B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662318086P 2016-04-04 2016-04-04
US62/318,086 2016-04-04
PCT/US2016/060626 WO2017176314A1 (en) 2016-04-04 2016-11-04 Process compatibility improvement by fill factor modulation

Publications (3)

Publication Number Publication Date
JP2019517017A JP2019517017A (ja) 2019-06-20
JP2019517017A5 true JP2019517017A5 (https=) 2019-12-12
JP6952711B2 JP6952711B2 (ja) 2021-10-20

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ID=60001339

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Application Number Title Priority Date Filing Date
JP2018552155A Active JP6952711B2 (ja) 2016-04-04 2016-11-04 ターゲットデザイン方法、製造方法及び計量ターゲット

Country Status (8)

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US (1) US10579768B2 (https=)
EP (1) EP3440511B1 (https=)
JP (1) JP6952711B2 (https=)
KR (1) KR102788661B1 (https=)
CN (1) CN109073981B (https=)
IL (1) IL261879B (https=)
TW (1) TWI710860B (https=)
WO (1) WO2017176314A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP7179742B2 (ja) * 2017-02-10 2022-11-29 ケーエルエー コーポレイション 散乱計測オーバーレイターゲット及び方法
WO2018226215A1 (en) 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10628544B2 (en) 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
WO2019083560A1 (en) * 2017-10-23 2019-05-02 Kla-Tencor Corporation REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS
US10824082B2 (en) * 2018-10-30 2020-11-03 Kla-Tencor Corporation Estimation of asymmetric aberrations
CN113439240A (zh) * 2019-02-19 2021-09-24 Asml控股股份有限公司 量测系统、光刻设备和方法
US11378394B1 (en) * 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
KR102871169B1 (ko) * 2021-12-17 2025-10-14 케이엘에이 코포레이션 개선된 타겟 배치 정확성을 위한 오버레이 타겟 설계
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

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US6303252B1 (en) 1999-12-27 2001-10-16 United Microelectronics Corp. Reticle having assist feature between semi-dense lines
TW512424B (en) * 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
TW479157B (en) 2000-07-21 2002-03-11 Asm Lithography Bv Mask for use in a lithographic projection apparatus and method of making the same
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
SG108975A1 (en) * 2003-07-11 2005-02-28 Asml Netherlands Bv Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern
SG111289A1 (en) * 2003-11-05 2005-05-30 Asml Masktools Bv A method for performing transmission tuning of a mask pattern to improve process latitude
DE60333688D1 (de) * 2003-12-19 2010-09-16 Ibm Differentielle metrologie für kritische abmessung und überlagerung
JP4634849B2 (ja) * 2005-04-12 2011-02-16 株式会社東芝 集積回路のパターンレイアウト、フォトマスク、半導体装置の製造方法、及びデータ作成方法
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US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
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JP2009109581A (ja) * 2007-10-26 2009-05-21 Toshiba Corp 半導体装置の製造方法
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JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
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NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
KR102477933B1 (ko) * 2015-12-17 2022-12-15 에이에스엠엘 네델란즈 비.브이. 메트롤로지 장치의 조정 또는 측정 타겟의 특성에 기초한 측정

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