JP2019509513A - 発光装置用の波長変換材料 - Google Patents
発光装置用の波長変換材料 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 101
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 54
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 23
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 17
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 13
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 12
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 10
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 9
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 8
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 8
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 8
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910003564 SiAlON Inorganic materials 0.000 claims description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 125000004429 atom Chemical group 0.000 description 25
- 239000010410 layer Substances 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052761 rare earth metal Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000006467 substitution reaction Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000000695 excitation spectrum Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000005245 sintering Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000000295 emission spectrum Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910017768 LaF 3 Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 5
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000002910 rare earth metals Chemical class 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000002284 excitation--emission spectrum Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910016655 EuF 3 Inorganic materials 0.000 description 3
- -1 III-phosphides Substances 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910017109 AlON Inorganic materials 0.000 description 2
- 229910018516 Al—O Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77927—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/77067—Silicon Nitrides or Silicon Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/77747—Silicon Nitrides or Silicon Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Description
当該材料は、結晶格子を有し、
□は、前記結晶格子の空孔を有し、
0<x≦3
−3≦y<3
0<z<1
0≦w1≦6
0≦x+y、x+y+z≦3
11-7/3x-y-w1≧0
3x+y+w1≦13であり、
Rは、3価のLa、Gd、Tb、Y、およびLuの群から選定され、ここでRは、利用可能で少なくともLaを含み、
Aは、2価のCa、Mg、Sr、Ba、およびEuの群から選定され、ここでAは、利用可能で少なくともCaを含み、
Mは、3価のCe、Pr、およびSmの群から選定され、
前記空孔□の少なくとも一つは、O原子で占められる。さらに、添付の特許請求の範囲にも記載されている。
20.3mgのLaF3、20.1mgのLa(NH2)3、35.6mgのSi(NH)2、20mgのCaH2、および0.5 mgのCeF3(1.2mol%La)を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。La(NH2)3を介して、酸素を導入した。冷却の後、黄色粉末を粉砕し、ふるい分けした。図6には、例1の材料の励起スペクトル40、および放射スペクトル42を示す。ピーク励起波長は440nmであり、x=0.471、y=0.510であり、発光効率(LE)は385lm/Woptであり、量子効率は0.620であり、ピーク放射波長は565nm(黄色−緑色)である。人の目で知覚できる場合、光源の輝度に対する放射の発光効率(単位ルーメン/ワット)を測定した。
20.3mgのLaF3、20.1mgのLa(NH2)3、35.6mgのSi(NH)2、および20mgのCaH2を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。冷却の後、無色の粉末を粉砕し、ふるい分けした。
23.2mgのLaCl3、100mgのSi2(NH)3×6NH4Cl、20.1mgのCaH2、および×0.4mgのCeF3(2.1mol%La)を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。冷却の後、得られた黄色粉末を粉砕、ふるい分けし、水で洗浄した。図7には、例3の材料の励起スペクトル60、および放射スペクトル62を示す。ピーク励起波長は440nmであり、x=0.489、y=0495であり、LEは352lm/Woptであり、量子効率は0.460であり、ピーク放射波長は581nm(黄色)である。
20.3mgのLaF3、20.1mgのLa(NH2)3、35.6mgのSi(NH)2、20 mgのCaH2、および×1.9mgのEuF3(1.9mol%Ca)を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。冷却の後、橙色粉末を粉砕し、ふるい分けした。
40.6mgのLaF3、40.2mgのLa(NH2)3、71.2mgのSi(NH)2、40mgのCaH2、1.6mgのCeF3(1.9mol%La)、および0.1mgのEuF3(0.05mol%Ca)を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。冷却の後、橙色粉末を粉砕し、ふるい分けした。図8には、例6の材料の励起スペクトル70、および放射スペクトル72を示す。ピーク励起波長は440nmであり、x=0.491、y=0495であり、LEは367lm/Woptであり、量子効率は0.636であり、ピーク放射波長は578nm(黄色)である。
23.2mgのLaCl3、100mgのSi2(NH)3×6NH4Cl、20.1mgのCaH2、および×0.4mgのEuF3(0.4mol%Ca)を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。冷却の後、得られた黄色粉末を粉砕、ふるい分けし、水で洗浄した。図9には、例7の材料の結晶の励起スペクトル50、および放射スペクトルを示す。放射波長範囲は530〜780nmであり、x=0.585、y=0414であり、LEは276lm/Woptであり、半値全幅(FWHM)は109.7nmであり、ピーク放射波長は608nm(橙色)である。
当該材料は、結晶格子を有し、
□は、前記結晶格子の空孔を有し、
0<x≦3
−3≦y<3
0<z<1
0≦w1≦6
0≦x+y、x+y+z≦3
11-7/3x-y-w1≧0
3x+y+w1≦13であり、
Rは、3価のLa、Gd、Tb、Y、およびLuの群から選定され、
Aは、2価のCa、Mg、Sr、Ba、およびEuの群から選定され、
Mは、3価のCe、Pr、およびSmの群から選定され、
前記空孔□の少なくとも一つは、O原子で占められ、
[La]>0、
[Ca]>0、
0<[Eu]<0.01、および
([La]+[Ca]+[Ce]+[Eu])/[Si]≦0.52である。さらに、添付の特許請求の範囲にも記載されている。
20.3mgのLaF3、20.1mgのLa(NH2)3、35.6mgのSi(NH)2、20mgのCaH2、および0.5 mgのCeF3(1.2mol%La)を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。La(NH2)3を介して、酸素を導入した。冷却の後、黄色粉末を粉砕し、ふるい分けした。図6には、例1の材料の励起スペクトル40、および放射スペクトル42を示す。ピーク励起波長は440nmであり、x=0.471、y=0.510であり、発光効率(LE)は385lm/Woptであり、量子効率は0.620であり、ピーク放射波長は565nm(黄色−緑色)である。人の目で知覚できる場合、光源の輝度に対する放射の発光効率(単位ルーメン/ワット)を測定した。
20.3mgのLaF3、20.1mgのLa(NH2)3、35.6mgのSi(NH)2、および20mgのCaH2を混合し、タングステンるつぼに入れ、乾燥窒素下、1600℃で10時間熱処理した。冷却の後、無色の粉末を粉砕し、ふるい分けした。
Claims (10)
- R3-x-y-zAx+yMzSi6-w1Alw1O3x+y+w1N11-7x/3-y-w1□2-2x/3を含む波長変換材料であって、
当該材料は、結晶格子を有し、
□は、前記結晶格子の空孔を有し、
0<x≦3
−3≦y<3
0<z<1
0≦w1≦6
0≦x+y、x+y+z≦3
11-7/3x-y-w1≧0
3x+y+w1≦13であり、
Rは、3価のLa、Gd、Tb、Y、およびLuの群から選定され、ここでRは、利用可能で少なくともLaを含み、
Aは、2価のCa、Mg、Sr、Ba、およびEuの群から選定され、ここでAは、利用可能で少なくともCaを含み、
Mは、3価のCe、Pr、およびSmの群から選定され、
前記空孔□の少なくとも一つは、O原子で占められる、波長変換材料。 - 当該材料は、Ceでドープされ、
([La]+[Ca]+[Ce])/[Si]≦0.52である、請求項1に記載の波長変換材料。 - 当該材料は、SiAlONを有する、請求項1または2に記載の波長変換材料。
- R=Laa(YbLu1-b)1-aであり、
ここで、a≧0.5、0≦b≦1である、請求項1乃至3のいずれか一つに記載の波長変換材料。 - さらに、YおよびSrを有する、請求項1乃至4のいずれか一つに記載の波長変換材料。
- 5%以下のSiがAlと置換されている、請求項1乃至5のいずれか一つに記載の波長変換材料。
- さらに、La、Ca、およびOを有する、請求項1乃至6のいずれか一つに記載の波長変換材料。
- 青色の光を放射する発光ダイオードと、
前記青色の光の光路に配置された、請求項1乃至7のいずれか一つに記載の波長変換材料と、
を有する装置。 - RはLaを有し、
AはCaを有し、
前記材料は、Ceでドープされ、
([La]+[Ca]+[Ce])/[Si]≦0.52である、請求項8に記載の装置。 - 前記波長変換材料は、第1の波長変換材料であり、黄色または緑色のピーク波長を有する光を放射し、
当該装置は、さらに、赤色のピーク波長を有する光を放射する、第2の波長変換材料を有する、請求項8または9に記載の装置。
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