JP2019508904A - 相関電子材料デバイスの製作 - Google Patents
相関電子材料デバイスの製作 Download PDFInfo
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- JP2019508904A JP2019508904A JP2018557220A JP2018557220A JP2019508904A JP 2019508904 A JP2019508904 A JP 2019508904A JP 2018557220 A JP2018557220 A JP 2018557220A JP 2018557220 A JP2018557220 A JP 2018557220A JP 2019508904 A JP2019508904 A JP 2019508904A
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- precursor
- nickel
- substrate
- cem
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- 230000002596 correlated effect Effects 0.000 title claims abstract description 68
- 239000012776 electronic material Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 239000002243 precursor Substances 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 83
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 107
- 239000000463 material Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 43
- 229910052759 nickel Inorganic materials 0.000 claims description 34
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 27
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 26
- 238000010926 purge Methods 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 23
- 239000003446 ligand Substances 0.000 claims description 23
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 23
- 230000002441 reversible effect Effects 0.000 claims description 19
- 229910052723 transition metal Inorganic materials 0.000 claims description 16
- 150000003624 transition metals Chemical class 0.000 claims description 16
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 12
- -1 ethylcyclopentadienyl Chemical group 0.000 claims description 11
- 150000003623 transition metal compounds Chemical class 0.000 claims description 11
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 10
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001273 butane Substances 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 2
- CHPLEWYRKUFKQP-UHFFFAOYSA-N nickel(2+);1,2,3,5,5-pentamethylcyclopenta-1,3-diene Chemical compound [Ni+2].CC1=[C-]C(C)(C)C(C)=C1C.CC1=[C-]C(C)(C)C(C)=C1C CHPLEWYRKUFKQP-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims 2
- LECAMOYWYJUYIH-UHFFFAOYSA-N 1-(dimethylamino)-2-methylbutan-2-olate;nickel(2+) Chemical compound CN(C)CC(C)(CC)O[Ni]OC(C)(CC)CN(C)C LECAMOYWYJUYIH-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 51
- 238000000231 atomic layer deposition Methods 0.000 description 30
- 230000007704 transition Effects 0.000 description 29
- 238000000151 deposition Methods 0.000 description 25
- 230000008859 change Effects 0.000 description 22
- 230000008569 process Effects 0.000 description 19
- 230000008021 deposition Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 230000036962 time dependent Effects 0.000 description 7
- 229910000480 nickel oxide Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007323 disproportionation reaction Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical compound CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- AGXSAKYCANEZGX-UHFFFAOYSA-N 1-(dimethylamino)-2-methylbutan-2-ol Chemical group CCC(C)(O)CN(C)C AGXSAKYCANEZGX-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006277 exogenous ligand Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- XTYRIICDYQTTTC-UHFFFAOYSA-N 1-(dimethylamino)-2-methylpropan-2-ol Chemical compound CN(C)CC(C)(C)O XTYRIICDYQTTTC-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QJXATUXVYHPLNO-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Ca+2].[Pr+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Ca+2].[Pr+3] QJXATUXVYHPLNO-UHFFFAOYSA-N 0.000 description 1
- GUPVSZUMGFYNAC-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Pr+3].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-].[Pr+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Pr+3].[Mn](=O)(=O)([O-])[O-].[Mn](=O)(=O)([O-])[O-].[Pr+3] GUPVSZUMGFYNAC-UHFFFAOYSA-N 0.000 description 1
- IHRNDXJDUYVDRB-UHFFFAOYSA-N [Ni].Cc1cccc1.Cc1cccc1 Chemical compound [Ni].Cc1cccc1.Cc1cccc1 IHRNDXJDUYVDRB-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- 238000004774 atomic orbital Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical class [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- UNMGLSGVXHBBPH-BVHINDLDSA-L nickel(2+) (NE)-N-[(3E)-3-oxidoiminobutan-2-ylidene]hydroxylamine Chemical compound [Ni++].C\C(=N/O)\C(\C)=N\[O-].C\C(=N/O)\C(\C)=N\[O-] UNMGLSGVXHBBPH-BVHINDLDSA-L 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000005233 quantum mechanics related processes and functions Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
に従ってモデル化することができる。Mott遷移を可能にするための電子及び/又は正孔の注入は、閾値電圧VMI及び閾値電流IMIに応答して、バンド間で起こり得る。電子濃度nを電荷濃度と等しくして、式(1)に従って、式(2)中のIMIによって注入された正孔によるMott遷移をもたらすことにより、トーマス・フェルミ遮蔽距離λTFへのこのような閾値電圧VMIの依存度は、次の式(3)
Jリセット(VMI)が、CEMデバイスを相対的にインピーダンスが高い状態に変えるために、閾値電圧VMIにおいてCEMデバイスに印加される、CEMデバイス中にわたる電流密度である。)
に従ってモデル化することができる。
104 電流密度プロファイルに対比された電圧の領域
108 点
110 VリセットからVセットを隔てることができる電圧範囲
116 点
122 デバイス端子
126 可変抵抗器
128 可変キャパシタ
130 デバイス端子
150 実施形態
201 実施形態
202 実施形態
203 実施形態
210 ブロック
220 ブロック
230 ブロック
240 ブロック
250 ブロック
260 ブロック
271 ブロック
272 ブロック
273 ブロック
300 実施形態
400 実施形態
410 実施形態
420 実施形態
430 実施形態
450 基材
501 実施形態
502 実施形態
503 実施形態
504 実施形態
505 実施形態
506 実施形態
507 実施形態
508 実施形態
510 前駆物質気体流量プロファイル
520 前駆物質気体流量プロファイル
530 パージガスの気体流量プロファイル
540 実施形態
550 実施形態
560 実施形態
600 実施形態
601 実施形態
602 実施形態
Claims (20)
- チャンバ内において、遷移金属酸化物、遷移金属、遷移金属化合物又はこれらの任意の組合せ及び第1の配位子を含む気体状態の第1の前駆物質に基材を曝露する工程、
相関電子材料のフィルムの第1の層を形成するように酸化物を含む気体状態の第2の前駆物質に基材を曝露する工程、並びに
相関電子材料のフィルムの更なる層を形成するように、第1の前駆物質及び第2の前駆物質に基材を曝露する工程を十分な回数繰り返す工程であって、相関電子材料のフィルムが、第1のインピーダンス状態及び第2のインピーダンス状態を示し、第1のインピーダンス状態及び第2のインピーダンス状態が、互いに実質的に相違する、工程
を含む方法。 - 相関電子材料のフィルムが、0.1%〜10.0%の間の原子濃度の電子逆供与性材料を含む、請求項1に記載の方法。
- 電子逆供与性材料が、カルボニルを含む、請求項2に記載の方法。
- 0.5秒〜180.0秒の間にわたって第1の前駆物質のチャンバをパージする工程を更に含む、請求項1から3のいずれか一項に記載の方法。
- 第1の前駆物質に基材を曝露する工程が、0.5秒〜180.0秒の間の持続期間にわたって実施される、請求項1から4のいずれか一項に記載の方法。
- 第1の前駆物質及び第2の前駆物質に基材を曝露する工程を50〜900回の間で繰り返す工程を含む、請求項1から5のいずれか一項に記載の方法。
- 相関電子材料のフィルムの厚さが1.5nm〜150.0nmの間に到達するまで、基材を曝露する工程を繰り返す工程を更に含む、請求項1から6のいずれか一項に記載の方法。
- 第1の前駆物質が気体状態において、ニッケルアミジネート(Ni(AMD))、ニッケルジ(シクロペンタジエニル)(Ni(Cp)2)、ニッケルジ(エチルシクロペンタジエニル)(Ni(EtCp)2)、ビス(2,2,6,6−テトラメチルヘプタン−3,5−ジオナト)ニッケル(II)(Ni(thd)2)、ニッケルアセチルアセトネート(Ni(acac)2)、ビス(メチルシクロペンタジエニル)ニッケル(Ni(CH3C5H4)2)、ニッケルジメチルグリオキシメート(Ni(dmg)2)、ビス(2−アミノ−ペンタ−2−エン−4−オナト)ニッケル(Ni(apo)2)、ビス(1−ジメチルアミノ−2−メチル−2−ブタノレート)ニッケル(Ni(dmamb)2)、ビス(1−ジメチルアミノ−2−メチル−2−プロパノレート)ニッケル(Ni(dmamp)2)、ビス(ペンタメチルシクロペンタジエニル)ニッケル(Ni(C5(CH3)5)2)若しくはニッケルカルボニル(Ni(CO)4)又はこれらの任意の組合せのうちの1つ又は複数を含む、請求項1から7のいずれか一項に記載の方法。
- 第2の前駆物質が、酸素(O2)、オゾン(O3)、水(H2O)、一酸化窒素(NO)、亜酸化窒素(N2O)若しくは過酸化水素(H2O2)又はこれらの任意の組合せを含む、請求項1から8のいずれか一項に記載の方法。
- 第1の前駆物質に基材を曝露する工程、第2の前駆物質に基材を曝露する工程又はこれらの任意の組合せが、20.0℃〜1000.0℃の間の温度で実施される、請求項1から9のいずれか一項に記載の方法。
- 曝露された基材をチャンバ内でアニーリングする工程を更に含む、請求項1から10のいずれか一項に記載の方法。
- アニーリングを開始する前に、20.0℃〜900.0℃の間にチャンバの温度を上昇させる工程を更に含む、請求項11に記載の方法。
- 曝露された基材が、気体状の窒素(N2)、水素(H2)、酸素(O2)、水又は水蒸気(H2O)、一酸化窒素(NO)、亜酸化窒素(N2O)、二酸化窒素(NO2)、オゾン(O3)、アルゴン(Ar)、ヘリウム(He)、アンモニア(NH3)、一酸化炭素(CO)、メタン(CH4)、アセチレン(C2H2)、エタン(C2H6)、プロパン(C3H8)、エチレン(C2H4)若しくはブタン(C4H10)又はこれらの任意の組合せのうちの1つ又は複数を含む環境下でアニーリングされる、請求項11又は12に記載の方法。
- 1.0nm〜100.0nmの間の概算厚さを有する相関電子材料を含む、基材に堆積されたフィルムであって、フィルムの厚さ寸法にわたって印加される0.1V〜10.0Vの間の電圧に応答して、少なくとも5.0:1.0である第1のインピーダンス状態の第2のインピーダンス状態に対する比を示すフィルム。
- 印加される電圧が、0.1V〜2.0Vの間であり、相関電子材料が、1.5nm〜150.0の間の厚さを占める、請求項14に記載のフィルム。
- 相関電子材料が、10〜1000の間の原子層を構成する、請求項14に記載のフィルム。
- 基材の少なくとも50.0%が、窒化物材料を含む、請求項14、15及び16のいずれか一項に記載のフィルム。
- 2個以上の導電性電極の間に配置された、1.0nm〜100.0nmの間の厚さを有する相関電子材料を含むスイッチングデバイスであって、2個以上の導電性電極のうちの少なくとも2個の間に印加される0.1V〜10.0Vの間の電圧に応答して、少なくとも5.0:1.0である第1のインピーダンス状態の第2のインピーダンス状態に対する比を示すスイッチングデバイス。
- 相関電子材料が、1.5nm〜150.0nmの間の厚さを有し、2個以上の導電性電極のうちの少なくとも2個の間に印加される電圧が、0.6V〜1.5Vの間にされる、請求項18に記載のスイッチングデバイス。
- 相関電子材料が、1.5nm〜150.0nmの間の厚さを有し、窒化チタン、白金、チタン、銅、アルミニウム、コバルト、ニッケル、タングステン、窒化タングステン、ケイ化コバルト、酸化ルテニウム、クロム、金、パラジウム、酸化インジウムスズ、タンタル、銀、イリジウム又はこれらの任意の組合せを含む電極材料に堆積される、請求項18又は19に記載のスイッチングデバイス。
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CN108604635A (zh) | 2018-09-28 |
TW202324803A (zh) | 2023-06-16 |
JP6976967B2 (ja) | 2021-12-08 |
US20170213961A1 (en) | 2017-07-27 |
TWI802533B (zh) | 2023-05-21 |
KR20180107165A (ko) | 2018-10-01 |
EP3408875A1 (en) | 2018-12-05 |
US9627615B1 (en) | 2017-04-18 |
TW201737520A (zh) | 2017-10-16 |
WO2017129970A1 (en) | 2017-08-03 |
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