JP2019212840A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 83
- 230000004888 barrier function Effects 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 17
- 238000003848 UV Light-Curing Methods 0.000 claims 1
- 238000001723 curing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 93
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
Claims (5)
- 半導体基板上にAlを含むオーミック電極を形成する工程と、
前記オーミック電極を覆うSiN膜を形成する工程と、
前記SiN膜上に、前記オーミック電極に重なる開口パターンを有する第1のフォトレジストを形成する工程と、
前記第1のフォトレジストを紫外線硬化する工程と、
前記開口パターンから露出する前記SiN膜に開口を形成し、当該開口内にて前記オーミック電極の表面を露出する工程と、
前記第1のフォトレジスト上、及び、前記開口から露出する前記オーミック電極上にバリア金属層を形成する工程と、
前記開口パターン内に第2のフォトレジストを形成する工程と、
前記第2のフォトレジストを熱処理し、前記開口に重なる前記バリア金属層を前記第2のフォトレジストにて覆う工程と、
前記第2のフォトレジストを用いて前記バリア金属層をエッチングする工程と、
を備える、半導体装置の製造方法。 - 前記第1のフォトレジストを紫外線硬化する前に、前記第1のフォトレジストを熱処理する工程をさらに備える、請求項1に記載の半導体装置の製造方法。
- 前記バリア金属層は、互いに積層されるTi層とTiWN層とTiW層とを有する、請求項1又は2に記載の半導体装置の製造方法。
- 前記SiN膜の厚さは、30nm〜50nmである、請求項1〜3のいずれか一項に記載の半導体装置の製造方法。
- 前記第2のフォトレジストは、紫外線レジストであり、
前記第2のフォトレジストに対する熱処理は、140℃以上にて実施される、請求項1〜4のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018109653A JP7019922B2 (ja) | 2018-06-07 | 2018-06-07 | 半導体装置の製造方法 |
TW108119284A TWI802705B (zh) | 2018-06-07 | 2019-06-04 | 半導體裝置之製造方法 |
CN202110631068.XA CN113506825A (zh) | 2018-06-07 | 2019-06-05 | 半导体装置 |
CN201910486151.5A CN110581064A (zh) | 2018-06-07 | 2019-06-05 | 半导体装置的制造方法 |
US16/433,883 US11011370B2 (en) | 2018-06-07 | 2019-06-06 | Method for manufacturing semiconductor device |
US17/154,416 US11476110B2 (en) | 2018-06-07 | 2021-01-21 | Semiconductor device |
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JP2018109653A JP7019922B2 (ja) | 2018-06-07 | 2018-06-07 | 半導体装置の製造方法 |
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JP2019212840A true JP2019212840A (ja) | 2019-12-12 |
JP7019922B2 JP7019922B2 (ja) | 2022-02-16 |
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JP2002184763A (ja) * | 2000-12-15 | 2002-06-28 | Sharp Corp | 半導体装置の製造方法 |
JP2014089992A (ja) * | 2012-10-29 | 2014-05-15 | Sumitomo Electric Device Innovations Inc | 半導体装置およびその製造方法 |
JP2016028410A (ja) * | 2014-07-09 | 2016-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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JPH04162531A (ja) | 1990-10-25 | 1992-06-08 | Iwatsu Electric Co Ltd | 半導体装置の製造方法 |
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TW486740B (en) * | 2001-01-03 | 2002-05-11 | United Microelectronics Corp | Improved method for controlling critical dimension during high temperature photoresist reflow process by ultraviolet light irradiation |
KR100492727B1 (ko) * | 2001-11-15 | 2005-06-07 | 엘지.필립스 엘시디 주식회사 | 포토레지스트의 잔사불량이 방지된 반도체 도핑방법 및이를 이용한 액정표시소자 제조방법 |
US8907350B2 (en) * | 2010-04-28 | 2014-12-09 | Cree, Inc. | Semiconductor devices having improved adhesion and methods of fabricating the same |
US9305788B2 (en) * | 2012-10-29 | 2016-04-05 | Sumitomo Electric Device Innovations, Inc. | Method of fabricating semiconductor device |
JP6997002B2 (ja) * | 2018-02-19 | 2022-01-17 | 住友電気工業株式会社 | 半導体装置及びその製造方法 |
JP7019922B2 (ja) * | 2018-06-07 | 2022-02-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
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JP2016028410A (ja) * | 2014-07-09 | 2016-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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TW202002023A (zh) | 2020-01-01 |
CN113506825A (zh) | 2021-10-15 |
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US11476110B2 (en) | 2022-10-18 |
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