JP2019206466A - 水素化物気相蒸着法(hvpe)を用いた窒化ガリウム基板の製造方法 - Google Patents
水素化物気相蒸着法(hvpe)を用いた窒化ガリウム基板の製造方法 Download PDFInfo
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- gallium nitride
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 271
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 255
- 239000000758 substrate Substances 0.000 title claims abstract description 218
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 67
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 95
- 239000010980 sapphire Substances 0.000 claims abstract description 95
- 239000007789 gas Substances 0.000 claims abstract description 80
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 78
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 74
- 238000004381 surface treatment Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 76
- 230000007423 decrease Effects 0.000 claims description 12
- 230000003247 decreasing effect Effects 0.000 claims description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 27
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 18
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 150000004678 hydrides Chemical class 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本出願は、2018年05月29日付の米国特許出願第15/991,481号に基づく優先権の利益を主張し、当該米国特許出願の文献に開示された全ての内容は本明細書の一部として組み込まれる。
Claims (8)
- サファイア基板上にアンモニアガスを注入する第1表面処理ステップと、
前記サファイア基板上に前記アンモニアガス及び塩化水素(HCl)ガスを注入してバッファ層を形成するステップと、
前記サファイア基板上に前記アンモニアガスを注入する第2表面処理ステップと、
前記サファイア基板上に、アンモニアガス:塩化水素ガスの流量比(NH3:HCl)(x:1)を段階的に減少させながら窒化ガリウム(GaN)を成長させるステップとを含むことを特徴とする、窒化ガリウム基板の製造方法。 - 前記サファイア基板上に、アンモニアガス:塩化水素ガスの流量比を段階的に減少させながら窒化ガリウムを成長させる前記ステップは、
前記アンモニアガスの流量は、時間に応じて段階的に減少し、塩化水素ガスの流量は、時間に応じて一定に維持されることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。 - 前記サファイア基板上に、アンモニアガス:塩化水素ガスの流量比を段階的に減少させながら窒化ガリウムを成長させる前記ステップは、
前記アンモニアガス:塩化水素ガスの流量比によって窒化ガリウム基板の反り(bow)が制御されることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。 - 前記アンモニアガス:塩化水素ガスの比は2〜10.8であることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。
- 前記窒化ガリウム(GaN)は、ピット窒化ガリウム層(Pit GaN)及びミラー窒化ガリウム層(Mirror GaN)を含むことを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。
- 前記ピット窒化ガリウム層は、50μm〜200μmの厚さを有することを特徴とする、請求項5に記載の窒化ガリウム基板の製造方法。
- 前記ミラー窒化ガリウム層は、50μm〜200μmの厚さを有することを特徴とする、請求項5に記載の窒化ガリウム基板の製造方法。
- 前記バッファ層は窒化アルミニウム(AlN)であることを特徴とする、請求項1に記載の窒化ガリウム基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US15/991,481 | 2018-05-29 | ||
US15/991,481 US10497562B1 (en) | 2018-05-29 | 2018-05-29 | Method for manufacturing gallium nitride substrate using the hydride vapor phase epitaxy |
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JP2019206466A true JP2019206466A (ja) | 2019-12-05 |
JP6709828B2 JP6709828B2 (ja) | 2020-06-17 |
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CN112820636B (zh) * | 2021-01-14 | 2024-01-16 | 镓特半导体科技(上海)有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
CN112820634B (zh) * | 2021-01-14 | 2024-01-16 | 镓特半导体科技(上海)有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
CN114108097B (zh) * | 2021-11-10 | 2023-12-22 | 南通大学 | 一种改善氮化镓晶体生长均匀性装置与生长方法 |
KR20230073549A (ko) * | 2021-11-19 | 2023-05-26 | 주식회사루미지엔테크 | 질화물막의 성장 방법 |
CN114203865B (zh) * | 2021-12-07 | 2023-08-01 | 宁波安芯美半导体有限公司 | 一种基于蓝宝石衬底的氮化铝外延片的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006143581A (ja) * | 2004-11-23 | 2006-06-08 | Samsung Corning Co Ltd | 窒化ガリウム単結晶厚膜およびその製造方法 |
JP2008069067A (ja) * | 2006-09-14 | 2008-03-27 | Samsung Corning Co Ltd | 窒化ガリウム単結晶厚膜の製造方法 |
JP2009519202A (ja) * | 2005-12-12 | 2009-05-14 | キーマ テクノロジーズ, インク. | Iii族窒化物製品及び同製品の作製方法 |
JP2012131692A (ja) * | 2011-04-28 | 2012-07-12 | Aetech Corp | 窒化ガリウム(GaN)自立基板の製造方法及び製造装置 |
JP2014172797A (ja) * | 2013-03-11 | 2014-09-22 | Aetech Corp | 窒化ガリウム(GaN)自立基板の製造方法及び製造装置 |
JP2017030984A (ja) * | 2015-07-29 | 2017-02-09 | 国立大学法人山口大学 | 半導体基板の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100304664B1 (ko) | 1999-02-05 | 2001-09-26 | 윤종용 | GaN막 제조 방법 |
JP2004296640A (ja) | 2003-03-26 | 2004-10-21 | Furukawa Co Ltd | GaN系半導体層の成長方法およびそれを用いた半導体基板の製造方法、半導体装置の製造方法 |
US7323256B2 (en) | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
KR101094403B1 (ko) * | 2004-01-29 | 2011-12-15 | 삼성코닝정밀소재 주식회사 | 휨이 감소된 사파이어/질화갈륨 적층체 |
KR100893360B1 (ko) | 2008-05-02 | 2009-04-15 | (주)그랜드 텍 | 질화갈륨 단결정의 성장을 위한 버퍼층의 형성방법 |
US8853086B2 (en) * | 2011-05-20 | 2014-10-07 | Applied Materials, Inc. | Methods for pretreatment of group III-nitride depositions |
JP5829152B2 (ja) * | 2012-03-08 | 2015-12-09 | 株式会社サイオクス | 窒化ガリウムテンプレート基板の製造方法及び窒化ガリウムテンプレート基板 |
US8728938B2 (en) * | 2012-06-13 | 2014-05-20 | Ostendo Technologies, Inc. | Method for substrate pretreatment to achieve high-quality III-nitride epitaxy |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006143581A (ja) * | 2004-11-23 | 2006-06-08 | Samsung Corning Co Ltd | 窒化ガリウム単結晶厚膜およびその製造方法 |
JP2009519202A (ja) * | 2005-12-12 | 2009-05-14 | キーマ テクノロジーズ, インク. | Iii族窒化物製品及び同製品の作製方法 |
JP2008069067A (ja) * | 2006-09-14 | 2008-03-27 | Samsung Corning Co Ltd | 窒化ガリウム単結晶厚膜の製造方法 |
JP2012131692A (ja) * | 2011-04-28 | 2012-07-12 | Aetech Corp | 窒化ガリウム(GaN)自立基板の製造方法及び製造装置 |
JP2014172797A (ja) * | 2013-03-11 | 2014-09-22 | Aetech Corp | 窒化ガリウム(GaN)自立基板の製造方法及び製造装置 |
JP2017030984A (ja) * | 2015-07-29 | 2017-02-09 | 国立大学法人山口大学 | 半導体基板の製造方法 |
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