JP2019167628A - Distribution system for at least one of chemical and electrolytic surface treatment - Google Patents

Abstract

To provide a distribution system for chemical and/or electrolytic surface treatment of a substrate in the process fluid, a device for chemical and/or electrolytic surface treatment of a substrate in the process fluid, and a distribution method for chemical and/or electrolytic surface treatment of a substrate in the process fluid.SOLUTION: The distribution system includes a distribution part 21, at least one process fluid inlet, and a channel 24. The distribution part is configured to lead the process fluid and/or the current flow to a substrate 30. The channel surrounds at least partially an outer periphery of the distribution part. The distribution part includes a nozzle array. The channel is configured to distribute the process fluid to the nozzle array from the process fluid inlet.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a distributed system for the surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid, a device for the surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid, and in the process fluid The present invention relates to a distribution method for surface treatment of at least one of chemical and electrolysis of a substrate.

  In the semiconductor industry, various processes can be used to deposit or remove material on the surface of a wafer.

  For example, to deposit a conductor, such as copper, on a pre-patterned wafer surface to create an interconnect structure for the device, electrochemical deposition (ECD) or electrochemical mechanical deposition (ECMD) ) Process can be used.

  A chemical mechanical polishing (CMP) is often used for the material removal step. Another technique, electropolishing or electroetching, can be used to remove excess material from the surface of the wafer.

  Electrochemical (or electrochemical mechanical) deposition of material on the wafer surface or electrochemical (or electrochemical mechanical) removal of material from the wafer surface is collectively referred to as “electrochemical processing”. Electrochemical, chemical and electrolytic surface treatment techniques may include electropolishing (or electrolytic etching), electrochemical mechanical polishing (or electrochemical mechanical etching), electrochemical deposition and electrochemical mechanical deposition. All technologies utilize process fluids.

  Chemical and electrolytic surface treatment techniques involve the following steps. The substrate to be processed is attached to the substrate holder and immersed in the electrolytic process fluid to serve as the cathode. The electrode is immersed in the process fluid and serves as the anode. A direct current is applied to the process fluid to dissociate positively charged metal ions at the anode. The ions then move to the cathode and plate the substrate attached to the cathode.

  The challenge in such a process is the formation of a uniform layer. The plating current may not be uniform when flowing from the anode to the cathode of the system, and the fluid distribution in the process chamber may not be uniform. Non-uniform current or fluid distribution can result in non-uniform layer thickness. A uniform distribution of at least one of current and flow will be realized by the distribution to be accommodated by the substrate to be processed. However, the formation of a uniform layer can be further improved.

  Accordingly, there may be a need to provide an improved distribution system for surface treatment of at least one of substrate chemistry and electrolysis in a process fluid that allows or improves uniform surface treatment of the substrate.

  The object of the present invention is solved by the subject matter of the independent claims, and further embodiments are limited to the dependent claims. It should be noted that the embodiments of the present invention described below provide a distributed system for surface treatment of at least one of substrate chemistry and electrolysis in a process fluid, at least one of substrate chemistry and electrolysis in a process fluid. It is also applicable to a device for surface treatment and a distribution method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid.

  In accordance with the present invention, a distributed system for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid is presented. The distribution system may be a vertical distribution system with a vertical plating chamber into which the substrate is inserted vertically. The distribution system may be a horizontal distribution system having a horizontal plating chamber into which the substrate is inserted horizontally.

  The chemical and / or electrolytic surface treatment may be any material deposition, galvanized coating, chemical or electrochemical etching, anodization, metal separation or the like.

  The substrate may comprise a conductive flat plate, a semiconductor substrate, a film substrate, a basically flat metal or metallized workpiece or the like. The surface to be treated may or may not be at least partially masked.

  A distribution system for at least one of chemical and electrolytic surface treatment includes at least one distribution, at least one process fluid inlet, and at least one channel.

  The distribution portion is configured to direct a flow of at least one of process fluid and current to the substrate. The distribution portion may correspond to the substrate to be processed, especially in view of its shape and size.

  The process fluid inlet is, for example, a duct, where process fluid enters the distribution system and distribution section.

  The distribution part includes a nozzle array. The nozzle array may be an area or field of several or multiple nozzles. The nozzle array may include at least one of an outlet opening for directing process fluid flow to the substrate and a backflow opening for receiving backflow of process fluid from the substrate. In other words, the nozzle array is an active field of the distribution part.

  The channel is configured to distribute process fluid from the process fluid inlet to the nozzle array. The channel at least partially surrounds the outer periphery of the distribution portion. The channel may surround, for example, between 50 and 90% of the outer periphery of the distribution section, preferably about 75% of the outer periphery of the distribution section. Exemplary values are further shown below. The channel may entirely surround the outer periphery of the distribution part. The term “periphery” can be understood as the outer boundary of the distribution part regardless of the shape of the distribution part (round, with corners, etc.).

  Does the system for chemical and electrolytic surface treatment according to the present invention thereby enable a uniform surface treatment of the substrate, in particular a uniform deposition rate on the substrate and / or formation of a uniform layer? Or can be improved. The channel at least partially surrounds the perimeter of the distribution, so as to improve the distribution of the process fluid from the process fluid inlet to the plurality of single nozzles of the nozzle array, thereby causing the process fluid to flow from the distribution to the substrate. Improve distribution. A better distribution of the process fluid may result in a more uniform surface treatment of the substrate, a more uniform deposition rate on the substrate, and / or a more uniform layer formation.

  The system for chemical and electrolytic surface treatment according to the present invention positions the process fluid inlet regardless of the subsequent distribution of the process fluid to the nozzle array and the substrate, thus further simplifying the construction of the distribution system. it can. In other words, the process fluid inlets may be arranged based solely on structure, construction, dimensions, or geometric considerations without taking into account (or at least to a lesser extent) the subsequent distribution of the process fluid.

  Therefore, at least one process fluid inlet can be distributed in the distribution section or asymmetrically arranged. There may be at least two, some or more process fluid inlets that may be distributed relative to the distribution or arranged asymmetrically. The term “asymmetric” can be understood that the process fluid inlet is not located on all sides of the distribution, and not even on two opposing sides of the distribution. For example, the process fluid inlet is located on only one side of the distribution section. The single side surface may be the lower side or the bottom side of the distribution portion, but may be the upper side or the top side. Process fluid inlets may be located only on two adjacent sides of the distribution.

  In one example, the channel is configured to distribute the process fluid evenly from the at least one process fluid inlet to the nozzle array. In one example, the channel is configured to distribute the process fluid into an essentially uniform flow of process fluid in the distribution section. In one example, the channels are configured to distribute the process fluid to an essentially uniform exit velocity of the process fluid exiting the nozzle array. The configuration of the channel can thereby allow for at least one of uniform surface treatment of the substrate, uniform deposition rate on the substrate, and formation of a uniform layer.

  In one example, the distribution portion and the channel have an angular shape in the top view. In another example, the distribution portion has a circular shape and the channel has a ring shape in the top view. The distribution portion may have any type of shape, for example, a rectangle, square, oval, triangle, or other suitable geometric configuration.

  In one example, the channel has a rectangular cross section. The channel may have any type of shape, for example, a cornered, square, round, oval, triangular, or other suitable geometric configuration. In one example, the channel has a width in the range of 1-20% of the width of the nozzle array, preferably in the range of 3-15%, more preferably in the range of 5-10%. In one example, the size of the cross section of the channel varies along the outer periphery of the distribution. For example, the underside of the channel adjacent to the process fluid inlet may have a width w1, and the lateral side of the channel may have a width w2 that is greater than w1. Further, the top side of the channel (opposite the bottom adjacent to the process fluid inlet) may have a width w3, which starts at the corner with w3 = w2 and apex at the center on the top side Increase to width w4. The channel dimensions can further improve at least one of uniform surface treatment of the substrate, uniform deposition rate on the substrate, and uniform layer formation.

  In accordance with the present invention, a device for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid is also presented. A device for chemical and electrolytic surface treatment includes a distribution system and / or a substrate holder for chemical and electrolytic surface treatment of a substrate in a process fluid as described above.

  The substrate holder is configured to hold a substrate. The substrate holder may be configured to hold one or two substrates (one substrate on each side of the substrate holder).

  The device for chemical and electrolytic surface treatment may further include an anode. The device for chemical and / or electrolytic surface treatment may further include a power source. The device for chemical and electrolytic surface treatment may further include a process fluid source.

In accordance with the present invention, a distribution method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid is also presented. The method for surface treatment of at least one of chemistry and electrolysis is not necessarily in this order, but the following steps:
a) providing a distribution configured to direct the flow of at least one of process fluid and current to the substrate;
b) providing at least one process fluid inlet;
c) providing a channel that at least partially surrounds the outer periphery of the distribution section; and d) using the channel to distribute process fluid from at least one process fluid inlet to the nozzle array of the distribution section.

  As a result, the present invention allows for uniform surface treatment of the substrate, uniform deposition rate, formation of a uniform layer on the substrate, etc., and at least one of doing and improving and facilitating chemistry and The present invention relates to a method for surface treatment of at least one of electrolysis. The channel at least partially surrounds the outer periphery of the distribution section, whereby at least one of the distribution of the process fluid from the process fluid inlet to the plurality of single nozzles of the nozzle array, the distribution to the substrate, and the distribution on the substrate. Can be improved.

  The devices and methods are particularly suitable for processing structured semiconductor substrates, conductor plates and film substrates, but also for processing the entire surface of planar metal and metallized substrates. The device and method may be used in the manufacture of large surface photovoltaic panels or large scale monitor panels for solar power generation according to the present invention.

  The system, device and method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the independent claims are in particular at least one preferred embodiment as defined and identical to those defined in the dependent claims It will be understood that Furthermore, it will be understood that preferred embodiments of the invention can be any combination of the dependent claims and the respective independent claims.

  These and other aspects of the invention will be apparent from and elucidated with reference to the embodiments described hereinafter.

FIG. 2 schematically and exemplarily shows an embodiment of a device for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the invention. It is a figure showing typically one example of a substrate holder holding two substrates. 1 schematically and exemplarily illustrates an embodiment of a device for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the invention and a distribution system for surface treatment of at least one of chemical and electrolysis; FIG. 1 schematically and exemplarily illustrates an embodiment of a device for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the invention and a distribution system for surface treatment of at least one of chemical and electrolysis; FIG. FIG. 4 shows the basic steps of an example of a distribution method for surface treatment of at least one of chemical and electrolysis of a substrate in a process fluid according to the invention.

  Exemplary embodiments of the invention are described below with reference to the accompanying drawings.

  FIG. 1 schematically and exemplarily illustrates one embodiment of a device 100 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid according to the present invention. A device 100 for chemical and electrolytic surface treatment includes a vertical distribution system 10 and a substrate holder 20 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid.

  The substrate holder 20 is also shown in FIG. The substrate holder 20 is configured to hold one or two substrates 30, one substrate 30 on each side of the substrate holder 20. Here, the substrate holder 20 holds a rectangular substrate 30 having a rounded corner and a size of, for example, 370 × 470 mm. Of course, the device 100 for chemical and electrolytic surface treatment is preferably used with a substrate holder 20 configured to hold only one substrate 30 for single-sided or double-sided surface treatment in a vertical configuration. May be.

  The substrate 30 may be a basically flat workpiece for the manufacture of electrical or electronic components and is mechanically fixed to the substrate holder 20. As the processing medium exits the distribution 21, the surface of the substrate 30 to be processed is immersed in the process fluid. In special cases, substrate 30 may be a masked or unmasked conductor plate, a semiconductor substrate or a film substrate, or any metal or metallized workpiece having a substantially planar surface. There may be.

  A distribution system 10 for chemical and electrolytic surface treatment of a substrate 30 in a process fluid as shown in FIGS. 1, 3 and 4 is targeted for chemical and electrolytic surface treatment. Generate flow and current density patterns. The distribution system 10 here includes two distributions 21 submerged in a process fluid (not shown). Opposing each distribution portion 21 is a substrate 30 attached to the substrate holder 20. The surface of the substrate 30 is wetted by the process fluid. There are two electrodes, here two anodes 22, each located on the opposite side of the distribution 21 from the substrate 30 and also immersed in the process fluid. The anode 22 is in mechanical contact with the distribution portion 21 or is spatially separated from the distribution portion 21 so that a current flow occurs between the substrate 22 functioning as a counter electrode in the process fluid and the anode 22. And it is attached to the back area of distribution part 21. Depending on the surface treatment method used, the anode 22 is made from a material such as platinum-coated titanium that is insoluble in the process fluid, or in other situations from a soluble material such as a metal that will be galvanically separated. It may be.

  The distribution system 10 further includes several process fluid inlets 23 for the process fluid and two channels 24 that surround the periphery of each distribution 21. The process fluid inlet 23 is an opening through which process fluid enters the distribution system 10 and the distribution section 21.

  The distribution sections 21 each include a nozzle array 25, and each channel 24 is arranged and shaped to distribute such process fluid from a respective process fluid inlet 23 to a respective nozzle array 25. The process fluid then flows from the fluid inlet 23 to the channel 24, from the channel 24 to the nozzle array 25, and from the nozzle array 25 to the outlet opening of the nozzle array 25. The outlet opening directs a flow of process fluid to the substrate 30 where the flow performs at least one of the desired chemical and electrolytic reactions. The distribution portion 21 further includes a backflow opening for receiving a backflow of process fluid from the substrate.

  The process fluid inlets 23 are distributed and arranged asymmetrically on one side surface of the distribution portion 21, that is, on the bottom side surface of the distribution portion 21. The distribution portion 21 and the channel 24 have a cornered shape when viewed in a top view. The size of the cross section of the channel 24 changes along the outer periphery of the distribution portion 21. For a 513 × 513 mm nozzle array, the width of the channel 24 is about 25.5 mm on the bottom side adjacent to the process fluid inlet and about 35.5 mm on the side side, rounded corners on the top side to vertex. And may vary between a width of about 45.5 mm at the top center. The ventilation opening part of the distribution part 21 may be arrange | positioned at the vertex.

  The channel 24 and particularly its configuration improves at least one of uniform surface treatment of the substrate and uniform deposition rate and uniform layer formation on the substrate. In addition, the channel facilitates the construction of the distribution system 10 because it positions the process fluid inlet 23 regardless of the subsequent distribution of the process fluid to the nozzle array 24 and the substrate 30. In other words, the process fluid inlet 23 may be arranged based only on structural considerations without taking into account (or at least to a lesser extent) the subsequent distribution of the process fluid.

  The distribution part 21 may preferably comprise plastic, particularly preferably polypropylene, polyvinyl chloride, polyethylene, acrylic glass or polymethyl methacrylate, polytetrafluoroethylene or another material that is not degraded by the process fluid.

FIG. 5 shows a schematic diagram of the steps of a distribution method for chemical and electrolytic surface treatment of the substrate 30 in the process fluid. A method for surface treatment of at least one of chemical and electrolysis includes the following steps. That is,
-In the first step S1, a distribution 21 is provided that is configured to direct the flow of at least one of process fluid and current to the substrate 30;
-In the second step S2, at least one process fluid inlet 23 is provided.
In the third step S3, a channel 24 is provided that at least partially surrounds the outer periphery of the distribution part 21.
-In the fourth step S4, the channel 24 is used to distribute the process fluid from at least the process fluid inlet 23 to the nozzle array 25 of the distribution section 21.

  The devices and methods are particularly suitable for processing structured semiconductor substrates, conductor plates and film substrates, but also for processing the entire surface of planar metal and metallized substrates. The device and method may be used in the manufacture of large surface photovoltaic panels or large scale monitor panels for solar power generation according to the present invention.

  It should be noted that embodiments of the present invention are described with reference to various subject matters. In particular, some embodiments have been described with reference to method claims, whereas other embodiments have been described with reference to apparatus claims. However, from the foregoing and following description, those skilled in the art will be able to make any combination between features on different subjects, in addition to any combination of features belonging to one subject, unless otherwise noted. Is believed to be disclosed by this application. However, all the features can be combined to provide a synergistic effect beyond the mere summation of features.

  While the invention has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments. Those skilled in the art of the claimed invention can understand and produce other variations to the disclosed embodiments from a study of the drawings, the disclosure, and the dependent claims.

  In the claims, the word “comprising” does not exclude other elements or steps, and the indefinite article “a” or “an” does not exclude a plurality. A single processing unit or other unit may fulfill the functions of several configurations recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope.

DESCRIPTION OF SYMBOLS 10 Distribution system 20 Substrate holder 21 Distribution part 22 Anode 24 Channel 30 Substrate 100 Device

Claims (15)

A distribution system (10) for surface treatment of at least one of chemical and electrolysis of a substrate (30) in a process fluid comprising:
A distribution section (21);
At least one process fluid inlet (23);
A channel (24) and
The distribution portion (21) is configured to direct the flow of at least one of the process fluid and current to the substrate (30);
The channel (24) at least partially surrounds the outer periphery of the distribution portion (21);
The distribution part (21) includes a nozzle array (25),
The channel (24) is configured to distribute the process fluid from the process fluid inlet (23) to the nozzle array (25);
Distribution system (10).   The distribution system (10) according to claim 1, wherein the process fluid inlets (23) are distributed in the distribution section (21).   The distribution system (10) according to any one of the preceding claims, wherein the process fluid inlet (23) is arranged asymmetrically in the distribution part (21).   The distribution system (10) according to any one of the preceding claims, comprising at least two of the process fluid inlets (23) arranged on only one side of the distribution part (21).   5. The channel (24) according to claim 1, wherein the channel (24) is configured to distribute the process fluid into an essentially uniform flow of process fluid in the distribution section (21). Distribution system (10).   The channel (24) according to any of claims 1 to 5, wherein the channel (24) is configured to distribute the process fluid to a substantially uniform outlet velocity of the process fluid exiting the nozzle array (25). The distribution system (10) according to one paragraph.   The distribution system (10) according to any one of claims 1 to 6, wherein the channel (24) entirely surrounds the outer periphery of the distribution section (21).   The channel (24) according to any one of the preceding claims, wherein the channel (24) is configured to distribute the process fluid evenly from at least one process fluid inlet (23) to the nozzle array (25). System (10) according to.   The system (10) according to any one of the preceding claims, wherein the distribution part (21) and the channel (24) have a cornered shape in a top view.   The system (10) according to any one of the preceding claims, wherein in the top view the distribution part (21) has a circular shape and the channel (24) has a ring shape.   The system (10) according to any one of the preceding claims, wherein the channel (24) has a rectangular cross section.   The channel (24) has a width in the range of 1-20% of the width of the nozzle array (25), preferably in the range of 3-15%, more preferably in the range of 5-10%. Item 12. The system (10) according to any one of Items 1 to 11.   The system (10) according to any one of the preceding claims, wherein the size of the cross section of the channel (24) varies along the outer circumference of the distribution part (21). A device (100) for surface treatment of at least one of chemical and electrolysis of a substrate (30) in a process fluid comprising:
A distribution system (10) according to any one of the preceding claims;
A substrate holder (20),
The substrate holder (20) is a device (100) configured to hold the substrate (30). A distribution method for chemical and electrolytic surface treatment of a substrate (30) in a process fluid, comprising:
Providing a distribution (21) configured to direct the flow of at least one of the process fluid and current to the substrate (30);
Providing at least one process fluid inlet (23);
Providing a channel (24) at least partially surrounding the outer periphery of the distribution part (21);
Distributing the process fluid from the process fluid inlet (23) to the nozzle array (25) of the distribution section (21) using the channel (24).

Images