JP2019141950A - Grinding device - Google Patents

Grinding device Download PDF

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JP2019141950A
JP2019141950A JP2018027834A JP2018027834A JP2019141950A JP 2019141950 A JP2019141950 A JP 2019141950A JP 2018027834 A JP2018027834 A JP 2018027834A JP 2018027834 A JP2018027834 A JP 2018027834A JP 2019141950 A JP2019141950 A JP 2019141950A
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wafer
grinding
outer peripheral
peripheral edge
holding table
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JP7396785B2 (en
Inventor
信 前嶋
Makoto Maejima
信 前嶋
太一 伊藤
Taichi Ito
太一 伊藤
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2018027834A priority Critical patent/JP7396785B2/en
Priority to KR1020190007363A priority patent/KR102654427B1/en
Priority to TW108105273A priority patent/TWI785206B/en
Priority to CN201910119467.0A priority patent/CN110170892B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/226—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain in which the tool is supported by the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

To prevent occurrence of crack on an outer peripheral edge of a wafer.SOLUTION: A grinding device comprises wash nozzles 50A and 50B that spray washing water 53 to an outer peripheral edge Wc of a wafer W held by a holding table 10 rotated by rotating means 13. The device, when roughly grinding the wafer W, can wash away waste 100 adhering to the outer peripheral edge Wc by spraying the washing water to the outer peripheral edge Wc of the wafer W using the wash nozzle 50A; and when finish-grinding the wafer W, also can wash the outer peripheral edge Wc of the wafer W roughly ground, by spraying the washing water to the edge using the wash nozzle 50B. This can prevent the waste 100 adhering to the outer peripheral edge Wc from being pulled up to an upper surface of the wafer W when the wafer W is thinned by the finish-grinding so that a thickness of the wafer becomes thinner than a thickness of the waste 100.SELECTED DRAWING: Figure 4

Description

本発明は、ウェーハを研削加工する研削装置に関する。   The present invention relates to a grinding apparatus for grinding a wafer.

ウェーハを研削する研削装置は、ウェーハを保持する保持テーブルと、保持テーブルに保持されたウェーハに研削を施す研削砥石が固着された研削ホイールが回転可能に装着された研削手段とを備え、ウェーハを所定の厚みに研削することができる。研削装置において、研削ホイールや保持テーブルを交換等した後は、保持テーブルの保持面と研削砥石の研削面とを平行にするため、研削砥石で保持面を研削するセルフグラインドを実施している（例えば、下記の特許文献１を参照）。   A grinding apparatus for grinding a wafer includes a holding table for holding the wafer, and a grinding means on which a grinding wheel to which a grinding wheel for grinding the wafer held on the holding table is fixed is rotatably mounted. It can be ground to a predetermined thickness. In the grinding device, after exchanging the grinding wheel or the holding table, self-grinding is performed by grinding the holding surface with the grinding wheel in order to make the holding surface of the holding table parallel to the grinding surface of the grinding wheel ( For example, see Patent Document 1 below).

保持テーブルは、円盤状のポーラス板と、ポーラス板を囲む枠体とにより構成され、セルフグラインドでポーラス板の上面と枠体の上面とを面一にしている。ポーラス板の上面がウェーハを保持する保持面となっている。一方、枠体の上面は、接触式の高さ測定部を接触させて、保持面の高さを測定する測定面となっている。研削加工では、保持面が保持したウェーハの上面高さを測定するとともに、枠体の上面高さを測定し、その高さ差からウェーハの厚さを算出して所望の厚さにウェーハを研削している。研削加工には、ウェーハを粗研削する粗研削と粗研削後のウェーハを所望の仕上げ厚みにする仕上げ研削とがあり、仕上げ研削後のウェーハは、例えば５〜１０μｍの厚さに薄化される。仕上げ研削されたウェーハの外周縁には欠けが生じることがある。仕上げ研削で使用した研削砥石の砥粒が欠けの発生する原因となっているため、対策として仕上げ研削用の研削砥石を小さい砥粒で構成することにより、ウェーハの外周縁に欠けが発生するのを防止している。   The holding table is composed of a disk-shaped porous plate and a frame surrounding the porous plate, and the upper surface of the porous plate and the upper surface of the frame are flush with each other by self-grinding. The upper surface of the porous plate is a holding surface for holding the wafer. On the other hand, the upper surface of the frame is a measurement surface for measuring the height of the holding surface by bringing a contact-type height measurement unit into contact therewith. In the grinding process, the upper surface height of the wafer held by the holding surface is measured, the upper surface height of the frame is measured, the wafer thickness is calculated from the height difference, and the wafer is ground to the desired thickness. doing. The grinding process includes rough grinding for rough grinding the wafer and finish grinding for making the wafer after the rough grinding have a desired finish thickness. The wafer after finish grinding is thinned to a thickness of, for example, 5 to 10 μm. . Chipping may occur at the outer peripheral edge of the finish-ground wafer. Since the abrasive grains used in finish grinding are the cause of chipping, chipping occurs on the outer periphery of the wafer by configuring the grinding wheel for finish grinding with small abrasive grains as a countermeasure. Is preventing.

特開２０１４−２３７２１０号公報JP 2014-237210 A

しかし、上記したような対策を講じてもウェーハの外周縁に欠けが発生するのを低減することはできるが、完全に欠けを無くすことは困難である。   However, even if the measures described above are taken, it is possible to reduce the occurrence of chipping on the outer peripheral edge of the wafer, but it is difficult to completely eliminate the chipping.

本発明は、上記の事情に鑑みてなされたものであり、ウェーハの外周縁に欠けが発生するのを防止できるようにすることを目的としている。   The present invention has been made in view of the above circumstances, and an object thereof is to prevent the occurrence of chipping on the outer peripheral edge of a wafer.

本発明は、円板状のウェーハを保持する保持テーブルと、該保持テーブルを回転させる回転手段と、環状に研削砥石を配設した研削ホイールを回転させ該保持テーブルが保持するウェーハを該研削砥石で研削する研削手段と、を備える研削装置であって、該回転手段で回転する該保持テーブルが保持したウェーハの外周縁に洗浄水を噴き付ける洗浄ノズルを備える。   The present invention relates to a holding table for holding a disk-shaped wafer, a rotating means for rotating the holding table, and a grinding wheel in which a grinding wheel is arranged in an annular shape to rotate the wafer held by the holding table. And a grinding device comprising: a grinding nozzle comprising: a cleaning nozzle that sprays cleaning water onto the outer peripheral edge of the wafer held by the holding table rotated by the rotating means.

上記洗浄ノズルは、上記保持テーブルが保持したウェーハの外周縁に上記洗浄水を噴き付ける噴射口を備え、該保持テーブルが保持したウェーハの外周側から該保持面方向においてウェーハの外周縁の接線方向より内側に該洗浄ノズルを位置づけ、且つ該保持面に対して所定の角度で該噴射口を下向きにさせウェーハの外周縁に該洗浄水を噴き付けることが好ましい。   The cleaning nozzle includes an injection port for spraying the cleaning water to the outer peripheral edge of the wafer held by the holding table, and the tangential direction of the outer peripheral edge of the wafer in the holding surface direction from the outer peripheral side of the wafer held by the holding table. It is preferable that the cleaning nozzle is positioned further inside, and the cleaning water is sprayed to the outer peripheral edge of the wafer by making the spray port face downward at a predetermined angle with respect to the holding surface.

また、本発明は、上記洗浄ノズルが上記洗浄水を噴き付けるウェーハの外周縁部分の上方側から洗浄水を噴き付けて該保持面に対してウェーハを押し付ける押付ノズルを備えることが好ましい。   In the present invention, it is preferable that the cleaning nozzle includes a pressing nozzle that sprays cleaning water from above the outer peripheral edge of the wafer to which the cleaning water is sprayed and presses the wafer against the holding surface.

本発明に係る研削装置は、回転手段で回転する保持テーブルが保持したウェーハの外周縁に洗浄水を噴き付ける洗浄ノズルを備えたため、例えばウェーハを粗研削するときは、洗浄ノズルによってウェーハの外周縁に洗浄水を噴き付けて外周縁に付着した研削屑や砥粒を洗い流すことができ、また、ウェーハを仕上げ研削する際も、洗浄ノズルによって粗研削済みのウェーハの外周縁に洗浄水を噴き付けて洗浄でき研削屑や砥粒がウェーハの外周縁に付着していないため、例えば、仕上げ研削時に、ウェーハの上面に研削屑や砥粒が引き上げられるおそれがない。したがって、本発明によれば、薄化後のウェーハの外周縁に欠けが発生することがなくなる。   Since the grinding apparatus according to the present invention includes a cleaning nozzle that sprays cleaning water onto the outer peripheral edge of the wafer held by the holding table that is rotated by the rotating means, for example, when roughly grinding the wafer, the outer peripheral edge of the wafer is cleaned by the cleaning nozzle. The cleaning water can be sprayed onto the outer peripheral edge to wash away the grinding debris and abrasive grains. Also, when the wafer is finish ground, the cleaning nozzle sprays the cleaning water onto the outer peripheral edge of the coarsely ground wafer. Since the grinding debris and abrasive grains are not adhered to the outer peripheral edge of the wafer, there is no possibility that the grinding debris and abrasive grains are pulled up on the upper surface of the wafer during finish grinding, for example. Therefore, according to the present invention, no chipping occurs on the outer peripheral edge of the thinned wafer.

上記洗浄ノズルは、上記保持テーブルが保持したウェーハの外周縁に上記洗浄水を噴き付ける噴射口を備え、保持テーブルが保持したウェーハの外周側から保持面方向においてウェーハの外周縁の接線方向より内側に洗浄ノズルを位置づけ、且つ保持面に対して所定の角度で噴射口を下向きにさせウェーハの外周縁に該洗浄水を噴き付けるように構成したため、研削時におけるウェーハの外周縁の洗浄効果が高めることができ、薄化後のウェーハの外周縁に欠けが発生することがなくなる。   The cleaning nozzle includes an injection port for spraying the cleaning water to the outer peripheral edge of the wafer held by the holding table, and is located on the inner side of the tangential direction of the outer peripheral edge of the wafer in the holding surface direction from the outer peripheral side of the wafer held by the holding table. In addition, the cleaning nozzle is positioned at a predetermined angle with respect to the holding surface, and the cleaning water is sprayed onto the outer peripheral edge of the wafer to increase the cleaning effect on the outer peripheral edge of the wafer during grinding. Therefore, no chipping occurs at the outer peripheral edge of the thinned wafer.

また、本発明は、上記洗浄ノズルが上記洗浄水を噴き付けるウェーハの外周縁部分の上方側から洗浄水を噴き付けて保持面に対してウェーハを押し付ける押付ノズルを備えたため、洗浄ノズルの上記所定の角度を保持面に対して平行に近い角度に設定しても、研削時にウェーハの外周縁が保持テーブルから浮き上がることはなく、外周縁を良好に洗浄可能となる。   In the present invention, the cleaning nozzle includes a pressing nozzle that sprays the cleaning water from above the outer peripheral edge of the wafer to which the cleaning water is sprayed and presses the wafer against the holding surface. Even if this angle is set to an angle close to parallel to the holding surface, the outer peripheral edge of the wafer does not lift from the holding table during grinding, and the outer peripheral edge can be cleaned well.

研削装置の構成を示す斜視図である。It is a perspective view which shows the structure of a grinding apparatus. 研削砥石の研削領域を示すとともに洗浄ノズルの位置を説明する説明図である。It is explanatory drawing which shows the grinding area | region of a grinding wheel, and demonstrates the position of a washing nozzle. 洗浄ノズルからウェーハの外周縁に洗浄水を噴き付けつつ、研削砥石でウェーハを研削する状態を示す断面図である。It is sectional drawing which shows the state which grinds a wafer with a grinding stone, spraying cleaning water on the outer periphery of a wafer from a cleaning nozzle. 洗浄ノズルからウェーハの外周縁に洗浄水を噴き付けるとともにウェーハの外周縁部分の上方側から押付ノズルが洗浄水を噴き付けて押し付けながら、研削砥石でウェーハを研削する状態を示す断面図である。It is sectional drawing which shows the state which grinds a wafer with a grinding wheel, spraying cleaning water on the outer periphery of a wafer from a cleaning nozzle, and a pressing nozzle spraying and pressing cleaning water from the upper side of the outer periphery part of a wafer.

図１に示す研削装置１は、被加工物である円板状のウェーハＷに研削を施す研削装置の一例である。研削装置１は、Ｙ軸方向に延在する装置ベース２を有しており、装置ベース２の−Ｙ方向側には、ステージ３ａ，３ｂが隣接して配設されている。ステージ３ａには研削前のウェーハＷを収容するカセット４ａが載置され、ステージ３ｂには研削後のウェーハＷを収容するカセット４ｂが載置されている。カセット４ａ及びカセット４ｂに対面する位置には、カセット４ａからのウェーハＷの搬出を行うとともにカセット４ｂへのウェーハＷの搬入を行う搬出入手段５が配設されている。搬出入手段５の可動範囲には、ウェーハＷを仮置きするための仮置き手段６と、研削後のウェーハＷに付着した研削屑を洗浄する洗浄手段７が配設されている。   A grinding apparatus 1 shown in FIG. 1 is an example of a grinding apparatus that performs grinding on a disk-shaped wafer W that is a workpiece. The grinding apparatus 1 has an apparatus base 2 that extends in the Y-axis direction. Stages 3 a and 3 b are adjacently disposed on the −Y direction side of the apparatus base 2. A cassette 4a that accommodates the wafer W before grinding is placed on the stage 3a, and a cassette 4b that accommodates the wafer W after grinding is placed on the stage 3b. At a position facing the cassette 4a and the cassette 4b, a loading / unloading means 5 for loading the wafer W from the cassette 4a and loading the wafer W into the cassette 4b is disposed. In the movable range of the carry-in / out means 5, a temporary placement means 6 for temporarily placing the wafer W and a cleaning means 7 for cleaning grinding dust adhering to the wafer W after grinding are disposed.

研削装置１は、自転可能なターンテーブル８と、ターンテーブル８の上に配設されウェーハＷを保持する保持面１１ａを有する保持テーブル１０と、保持テーブル１０を回転させる回転手段１３と、保持テーブル１０に保持されたウェーハＷに対して粗研削を施す研削手段２０Ａと、保持テーブル１０に保持され粗研削済みのウェーハＷに対して仕上げ研削を施す研削手段２０Ｂとを備えている。仮置き手段６の近傍には、仮置き手段６に仮置きされた研削前のウェーハＷを保持テーブル１０に搬送する第１の搬送手段９ａを備えている。また、洗浄手段７の近傍には、保持テーブル１０に保持された研削後のウェーハＷを洗浄手段７に搬送する第２の搬送手段９ｂを備えている。   The grinding apparatus 1 includes a turntable 8 that can rotate, a holding table 10 that is provided on the turntable 8 and has a holding surface 11 a that holds a wafer W, a rotating unit 13 that rotates the holding table 10, and a holding table. A grinding means 20A for performing rough grinding on the wafer W held on the surface 10 and a grinding means 20B for performing finish grinding on the wafer W which has been held on the holding table 10 and has been subjected to rough grinding are provided. In the vicinity of the temporary placement means 6, a first transfer means 9 a for transferring the unground wafer W temporarily placed on the temporary placement means 6 to the holding table 10 is provided. Further, in the vicinity of the cleaning unit 7, a second transfer unit 9 b that transfers the ground wafer W held by the holding table 10 to the cleaning unit 7 is provided.

保持テーブル１０は、ターンテーブル８の中心を中心にして等角度を設けて例えば３つ配設されている。保持テーブル１０は、円盤状のポーラス板１１と、ポーラス板１１が収容される枠体１２とにより構成され、ポーラス板１１の上面がウェーハＷを吸引保持する保持面１１ａとなっている。保持テーブル１０の保持面１１ａを囲繞する枠体１２のリング状の外周側上面が保持面１１ａと同じ高さを有する基準面１２ａとなっている。各保持テーブル１０の下端には回転手段１３がそれぞれ接続されており、所定の回転速度で自転可能となっている。ターンテーブル８が回転することにより、保持テーブル１０を公転させることができる。なお、保持テーブル１０の保持面１１ａは、その中心部分を頂点として外周方向を下方に傾斜させた傾斜面となっている。   For example, three holding tables 10 are arranged at an equal angle with respect to the center of the turntable 8. The holding table 10 includes a disk-shaped porous plate 11 and a frame body 12 in which the porous plate 11 is accommodated, and the upper surface of the porous plate 11 serves as a holding surface 11 a that holds the wafer W by suction. The ring-shaped outer peripheral side upper surface of the frame 12 surrounding the holding surface 11a of the holding table 10 serves as a reference surface 12a having the same height as the holding surface 11a. Rotating means 13 is connected to the lower end of each holding table 10 and can rotate at a predetermined rotational speed. When the turntable 8 rotates, the holding table 10 can be revolved. In addition, the holding surface 11a of the holding table 10 is an inclined surface in which the outer peripheral direction is inclined downward with the central portion as an apex.

装置ベース２の＋Ｙ方向側の端部には、Ｚ軸方向に延在するコラム１４ａが立設されている。コラム１４ａの前方側において研削送り手段３０Ａを介して研削手段２０Ａが配設されている。研削手段２０Ａは、Ｚ軸方向の軸心を有するスピンドル２１と、スピンドル２１の一端に接続されたモータ２２と、スピンドル２１が回転可能に囲繞して支持されたスピンドルハウジング２３と、スピンドルハウジング２３を保持するホルダ２４と、スピンドル２１の下端においてマウント２５を介して着脱自在に装着された研削ホイール２６と、研削ホイール２６の下部に環状に配設された粗研削用の研削砥石２７ａとを備えている。研削砥石２７ａの砥粒の粒度としては、例えば、＃６００（平均粒径２０μｍ）を用いる。そして、モータ２２が駆動されてスピンドル２１が回転することにより、研削ホイール２６を所定の回転速度で回転させることができる。   A column 14 a extending in the Z-axis direction is provided upright at the end of the apparatus base 2 on the + Y direction side. A grinding means 20A is disposed on the front side of the column 14a via a grinding feed means 30A. The grinding means 20A includes a spindle 21 having an axis in the Z-axis direction, a motor 22 connected to one end of the spindle 21, a spindle housing 23 in which the spindle 21 is rotatably supported and supported, and the spindle housing 23. A holder 24 for holding, a grinding wheel 26 detachably mounted via a mount 25 at the lower end of the spindle 21, and a grinding wheel 27 a for rough grinding disposed annularly below the grinding wheel 26 are provided. Yes. As the grain size of the abrasive grains of the grinding wheel 27a, for example, # 600 (average grain size 20 μm) is used. Then, when the motor 22 is driven and the spindle 21 rotates, the grinding wheel 26 can be rotated at a predetermined rotational speed.

研削送り手段３０Ａは、Ｚ軸方向に延在するボールネジ３１と、ボールネジ３１の一端に接続されたモータ３２と、ボールネジ３１と平行に延在しコラム１４ａに配設された一対のガイドレール３３と、一方の面がホルダ２４に連結された昇降板３４とを備えている。昇降板３４の他方の面に一対のガイドレール３３が摺接し、昇降板３４の中央部に形成されたナットにはボールネジ３１が螺合している。モータ３２がボールネジ３１を駆動することにより、昇降板３４とともに研削手段２０Ａを±Ｚ方向に昇降させることができる。   The grinding feed means 30A includes a ball screw 31 extending in the Z-axis direction, a motor 32 connected to one end of the ball screw 31, a pair of guide rails 33 extending in parallel to the ball screw 31 and disposed on the column 14a. The lift plate 34 is connected to the holder 24 at one surface. A pair of guide rails 33 are in sliding contact with the other surface of the elevating plate 34, and a ball screw 31 is screwed into a nut formed at the center of the elevating plate 34. When the motor 32 drives the ball screw 31, the grinding means 20 </ b> A can be raised and lowered in the ± Z direction together with the lifting plate 34.

装置ベース２の＋Ｙ方向側の端部には、コラム１４ａとの間に所定の間隔を設けてコラム１４ｂが立設されている。コラム１４ｂの前方側において研削送り手段３０Ｂを介して研削手段２０Ｂが配設されている。研削手段２０Ｂは、スピンドル２１の下端においてマウント２５を介して着脱自在に装着された研削ホイール２６と、研削ホイール２６の下部に環状に配設された仕上げ研削用の研削砥石２７ｂとを備え、これら以外は、研削手段２０Ａと同様の構成となっている。研削砥石２７ｂの砥粒の粒度としては、例えば、＃８０００を用いる。研削手段２０Ｂでは、モータ２２が駆動されてスピンドル２１が回転することにより、研削ホイール２６を所定の回転速度で回転させることができる。   At the end of the apparatus base 2 on the + Y direction side, a column 14b is erected with a predetermined space from the column 14a. A grinding means 20B is disposed on the front side of the column 14b via a grinding feed means 30B. The grinding means 20B includes a grinding wheel 26 that is detachably mounted at the lower end of the spindle 21 via a mount 25, and a grinding wheel 27b for finish grinding that is annularly disposed below the grinding wheel 26. Other than that, the configuration is the same as that of the grinding means 20A. For example, # 8000 is used as the grain size of the abrasive grains of the grinding wheel 27b. In the grinding means 20B, the motor 22 is driven to rotate the spindle 21, whereby the grinding wheel 26 can be rotated at a predetermined rotational speed.

研削送り手段３０Ｂについても、研削送り手段３０Ａと同様の構成となっている。すなわち、研削送り手段３０Ｂは、ボールネジ３１と、ボールネジ３１の一端に接続されたモータ３２と、ボールネジ３１と平行に延在しコラム１４ｂに配設された一対のガイドレール３３と、一方の面がホルダ２４に連結された昇降板３４とを備え、モータ３２がボールネジ３１を駆動することにより、昇降板３４とともに研削手段２０Ｂを±Ｚ方向に昇降させることができる。   The grinding feed means 30B has the same configuration as the grinding feed means 30A. That is, the grinding feed means 30B includes a ball screw 31, a motor 32 connected to one end of the ball screw 31, a pair of guide rails 33 extending in parallel to the ball screw 31 and disposed on the column 14b, and one surface thereof. A lifting plate 34 coupled to the holder 24 is provided, and the motor 32 drives the ball screw 31 so that the grinding means 20B can be lifted and lowered in the ± Z direction together with the lifting plate 34.

ターンテーブル８の中央には、支柱１５が立設されている。支柱１５の上端面には、ケース１６が固定されている。ケース１６の研削手段２０Ａ側（−Ｘ方向側）の側面に研削手段２０Ａによって粗研削されるウェーハＷの厚みを測定する厚み測定手段４０Ａが配設され、ケース１６の研削手段２０Ｂ側（＋Ｘ方向側）の側面に研削手段２０Ｂによって仕上げ研削されるウェーハＷの厚みを測定する厚み測定手段４０Ｂが配設されている。厚み測定手段４０Ａ，４０Ｂは、接触式のハイトゲージであり、保持テーブル１０の保持面１１ａに保持されたウェーハＷの上面高さを測定する第１のゲージ４１と、保持テーブル１０の保持面１１ａの保持面高さを測定する第２のゲージ４２とを備えている。   A support column 15 is erected in the center of the turntable 8. A case 16 is fixed to the upper end surface of the support column 15. A thickness measuring means 40A for measuring the thickness of the wafer W roughly ground by the grinding means 20A is disposed on the side surface of the case 16 on the grinding means 20A side (−X direction side), and the grinding means 20B side (+ X direction) of the case 16 is disposed. The thickness measuring means 40B for measuring the thickness of the wafer W to be finish-ground by the grinding means 20B is disposed on the side surface. The thickness measuring means 40 </ b> A and 40 </ b> B are contact type height gauges, and a first gauge 41 for measuring the upper surface height of the wafer W held on the holding surface 11 a of the holding table 10 and the holding surface 11 a of the holding table 10. And a second gauge 42 for measuring the holding surface height.

第１のゲージ４１は、被測定物の表面に接触させる測定子を有し、測定子の位置は保持テーブル１０の保持面１１ａの位置に対応している。第１のゲージ４１では、その測定子が保持テーブル１０に保持されたウェーハＷの上面に接触したときの高さをウェーハＷの上面高さとして測定することができる。第２のゲージ４２は、被測定物の表面に接触させる測定子を有し、保持テーブル１０の基準面１２ａの位置に対応している。第２のゲージ４２では、その測定子が基準面１２ａに接触したときの高さを保持テーブル１０の保持面高さとして測定することができる。そして、厚み測定手段４０Ａ，４０Ｂでは、第１のゲージ４１の測定値と第２のゲージ４２の測定値との差をウェーハＷの厚みとして算出することができる。   The first gauge 41 has a probe that is brought into contact with the surface of the object to be measured, and the position of the probe corresponds to the position of the holding surface 11 a of the holding table 10. In the first gauge 41, the height when the probe contacts the upper surface of the wafer W held on the holding table 10 can be measured as the upper surface height of the wafer W. The second gauge 42 has a probe that contacts the surface of the object to be measured, and corresponds to the position of the reference surface 12 a of the holding table 10. In the second gauge 42, the height when the probe contacts the reference surface 12 a can be measured as the holding surface height of the holding table 10. The thickness measuring means 40A, 40B can calculate the difference between the measured value of the first gauge 41 and the measured value of the second gauge 42 as the thickness of the wafer W.

研削装置１は、回転手段１３で回転する保持テーブル１０が保持したウェーハＷの外周縁Ｗｃに向けて洗浄水を噴き付ける洗浄ノズル５０Ａ，５０Ｂを備えている。洗浄ノズル５０Ａは、研削手段２０Ａ側（−Ｘ方向側）のターンテーブル８の外側に立設された支持部１７ａにより支持されている。洗浄ノズル５０Ａは、保持テーブル１０が保持したウェーハＷの外周縁Ｗｃに向けて洗浄水を噴き付ける噴射口５１を備え、噴射口５１は洗浄水供給源５２に接続されている。洗浄ノズル５０Ａでは、研削手段２０ＡによるウェーハＷの粗研削時にウェーハＷの外周縁Ｗｃを洗浄することができる。洗浄ノズル５０Ｂは、研削手段２０Ｂ側（＋Ｘ方向側）のターンテーブル８の外側に立設された支持部１７ｂにより支持されている。洗浄ノズル５０Ｂの構成は、洗浄ノズル５０Ａと同様となっており、噴射口５１は洗浄水供給源５２に接続されている。洗浄ノズル５０Ｂでは、研削手段２０ＢによるウェーハＷの仕上げ研削時にウェーハＷの外周縁Ｗｃを洗浄することができる。   The grinding apparatus 1 includes cleaning nozzles 50 </ b> A and 50 </ b> B that spray cleaning water toward the outer peripheral edge Wc of the wafer W held by the holding table 10 that is rotated by the rotating unit 13. The cleaning nozzle 50A is supported by a support portion 17a erected on the outside of the turntable 8 on the grinding means 20A side (−X direction side). The cleaning nozzle 50 </ b> A includes an injection port 51 that sprays cleaning water toward the outer peripheral edge Wc of the wafer W held by the holding table 10, and the injection port 51 is connected to the cleaning water supply source 52. The cleaning nozzle 50A can clean the outer peripheral edge Wc of the wafer W during rough grinding of the wafer W by the grinding means 20A. The cleaning nozzle 50B is supported by a support portion 17b erected on the outside of the turntable 8 on the grinding means 20B side (+ X direction side). The configuration of the cleaning nozzle 50B is the same as that of the cleaning nozzle 50A, and the injection port 51 is connected to the cleaning water supply source 52. The cleaning nozzle 50B can clean the outer peripheral edge Wc of the wafer W when the grinding means 20B finish-grinds the wafer W.

次に、図１に示す研削装置１の動作例について説明する。研削前のウェーハＷは、上面（被研削面）と反対側の下面にテープＴが貼着され、カセット４ａに複数収容されている。搬出入手段５は、カセット４ａから研削前のウェーハＷを１枚取り出し、仮置き手段６にウェーハＷを仮置きする。仮置き手段６においてウェーハＷの位置合わせをした後、第１の搬送手段９ａによって、仮置き手段６から保持テーブル１０にウェーハＷを搬送する。保持テーブル１０は、吸引源の吸引力を作用させた保持面１１ａでテープＴを介してウェーハＷを吸引保持する。   Next, an operation example of the grinding apparatus 1 shown in FIG. 1 will be described. The wafer W before grinding has a tape T attached to the lower surface opposite to the upper surface (surface to be ground), and a plurality of wafers W are accommodated in the cassette 4a. The carry-in / out means 5 takes out one wafer W before grinding from the cassette 4 a and temporarily places the wafer W in the temporary placement means 6. After aligning the wafer W in the temporary placement means 6, the wafer W is transported from the temporary placement means 6 to the holding table 10 by the first transport means 9a. The holding table 10 sucks and holds the wafer W via the tape T on the holding surface 11a to which the suction force of the suction source is applied.

ターンテーブル８が回転することにより、ウェーハＷを保持した保持テーブル１０を研削手段２０Ａの下方に移動させる。回転手段１３によって、図２に示すように、保持テーブル１０を例えば矢印Ａ方向に回転させる。次いで、図１に示した研削送り手段３０Ａにより研削手段２０Ａを−Ｚ方向に下降させつつ、研削手段２０Ａは、スピンドル２１を回転させることにより、研削砥石２７ａを例えば矢印Ａ方向に回転させ、研削砥石２７ａでウェーハＷの上面を押圧しながら粗研削する。   As the turntable 8 rotates, the holding table 10 holding the wafer W is moved below the grinding means 20A. As shown in FIG. 2, the holding table 10 is rotated by, for example, the arrow A direction by the rotating means 13. Next, while the grinding means 20A is lowered in the −Z direction by the grinding feed means 30A shown in FIG. 1, the grinding means 20A rotates the spindle 21 to rotate the grinding wheel 27a in the direction of the arrow A, for example. Rough grinding is performed while pressing the upper surface of the wafer W with the grindstone 27a.

粗研削中は、洗浄ノズル５０ＡからウェーハＷの外周縁Ｗｃに向けて洗浄水５３を噴き付けて洗浄する。ここで、図２に示すように、矢印Ａ方向に回転する研削砥石２７ａの回転軌跡のうち、研削砥石２７ａが実際にウェーハＷの上面に接触して研削を行う円弧状の領域が研削領域Ｐとなっている。粗研削中、研削砥石２７ａは常にウェーハＷの中心Ｗｏを通過しながら、研削領域Ｐにおいて研削砥石２７ａの研削面がウェーハＷの上面に接触して粗研削する。   During rough grinding, cleaning is performed by spraying cleaning water 53 from the cleaning nozzle 50A toward the outer peripheral edge Wc of the wafer W. Here, as shown in FIG. 2, of the rotation trajectory of the grinding wheel 27a rotating in the direction of arrow A, the arcuate region where the grinding wheel 27a actually contacts the upper surface of the wafer W and performs grinding is the grinding region P. It has become. During the rough grinding, the grinding wheel 27a always passes through the center Wo of the wafer W, and the grinding surface of the grinding wheel 27a contacts the upper surface of the wafer W in the grinding region P to perform rough grinding.

粗研削時にウェーハＷの外周縁Ｗｃを洗浄するときには、洗浄ノズル５０Ａを、保持テーブル１０が保持したウェーハＷの外周側から保持面方向においてウェーハＷの外周縁Ｗｃの接線方向より内側に位置づけ、且つ、図３に示す保持テーブル１０の保持面１１ａに対して所定の角度で噴射口５１を下向きにさせてウェーハＷの外周縁Ｗｃに洗浄水５３を噴き付けることが好ましい。本実施形態に示す洗浄ノズル５０Ａは、図２に示すウェーハＷの外周縁Ｗｃの接線方向から僅かに内側の噴射位置ＳＰ１に位置づけられており、噴射口５１から矢印Ａ方向に回転するウェーハＷの回転方向と対向するように外周縁Ｗｃに向けて洗浄水５３を噴射している。   When cleaning the outer peripheral edge Wc of the wafer W during rough grinding, the cleaning nozzle 50A is positioned inside the tangential direction of the outer peripheral edge Wc of the wafer W in the holding surface direction from the outer peripheral side of the wafer W held by the holding table 10, and 3, it is preferable to spray the cleaning water 53 on the outer peripheral edge Wc of the wafer W by making the injection port 51 face downward at a predetermined angle with respect to the holding surface 11a of the holding table 10 shown in FIG. The cleaning nozzle 50A shown in the present embodiment is positioned at the injection position SP1 slightly inward from the tangential direction of the outer peripheral edge Wc of the wafer W shown in FIG. The cleaning water 53 is sprayed toward the outer peripheral edge Wc so as to face the rotation direction.

洗浄ノズル５０Ａの位置は、上記した噴射位置ＳＰ１に限られない。例えば、ウェーハＷの外周縁Ｗｃの接線方向に沿って洗浄水５３を噴射可能な噴射位置ＳＰ２に洗浄ノズル５０Ａを位置づけてもよいし、噴射位置ＳＰ１，ＳＰ２と反対側の位置でウェーハＷの外周縁Ｗｃに向けて洗浄水５３を噴射可能な噴射位置ＳＰ３に洗浄ノズル５０Ａを位置づけてもよい。   The position of the cleaning nozzle 50A is not limited to the ejection position SP1 described above. For example, the cleaning nozzle 50A may be positioned at the spray position SP2 where the cleaning water 53 can be sprayed along the tangential direction of the outer peripheral edge Wc of the wafer W, or outside the wafer W at a position opposite to the spray positions SP1 and SP2. The cleaning nozzle 50A may be positioned at the spray position SP3 where the cleaning water 53 can be sprayed toward the peripheral edge Wc.

図３に示すように、洗浄ノズル５０Ａの噴射口５１から洗浄水５３を噴射する所定の角度として、例えば保持テーブル１０の保持面１１ａに対して下向きの４５°に設定されている。このように位置づけられた洗浄ノズル５０Ａの噴射口５１から洗浄水５３をウェーハＷの外周縁Ｗｃに噴き付けながら、粗研削を行うことにより、ウェーハＷの外周縁Ｗｃに付着した屑１００を洗い流す。屑１００には、研削屑や砥粒が含まれている。洗浄ノズル５０Ａの所定の角度は、特に限定されるものではないが、角度が４５°よりも小さいと、噴射口５１から噴射された洗浄水５３によってウェーハＷを保持テーブル１０から浮かせてしまうし、角度が４５°よりも大きいと、ウェーハＷの外周縁Ｗｃから研削屑や砥粒が除去しきれず洗浄効果が悪くなる。したがって、洗浄ノズル５０Ａの所定の角度は４５°が好ましく、ウェーハＷの外周縁Ｗｃの洗浄効果を高めることができる。   As shown in FIG. 3, for example, the predetermined angle at which the cleaning water 53 is sprayed from the spray port 51 of the cleaning nozzle 50 </ b> A is set to 45 ° downward with respect to the holding surface 11 a of the holding table 10. The scraps 100 adhering to the outer peripheral edge Wc of the wafer W are washed away by performing rough grinding while spraying the cleaning water 53 onto the outer peripheral edge Wc of the wafer W from the jet nozzle 51 of the cleaning nozzle 50A positioned in this way. The scrap 100 includes grinding scraps and abrasive grains. The predetermined angle of the cleaning nozzle 50A is not particularly limited, but if the angle is smaller than 45 °, the cleaning water 53 ejected from the ejection port 51 causes the wafer W to float from the holding table 10, If the angle is greater than 45 °, the grinding debris and abrasive grains cannot be completely removed from the outer peripheral edge Wc of the wafer W, resulting in a poor cleaning effect. Therefore, the predetermined angle of the cleaning nozzle 50A is preferably 45 °, and the cleaning effect of the outer peripheral edge Wc of the wafer W can be enhanced.

粗研削中は、図１に示した厚み測定手段４０Ａを用いて常にウェーハＷの厚みの変化を監視し、ウェーハＷが所望の厚みとなった時点で粗研削が終了する。なお、粗研削後のウェーハＷの厚みは、１００〜２００μｍに設定される。また、粗研削で発生する屑１００は、１０〜２０μｍである。その後、ターンテーブル８がさらに回転し、粗研削後のウェーハＷを保持した保持テーブル１０を研削手段２０Ｂの下方に移動させる。保持テーブル１０を回転させるとともに、研削手段２０Ｂは、スピンドル２１を回転させ研削砥石２７ｂを所定の回転速度に回転させつつ、研削送り手段３０Ｂによって研削手段２０Ｂを例えば−Ｚ方向に下降させ、回転する研削砥石２７ｂでウェーハＷの上面を所望の仕上げ厚みに至るまで仕上げ研削する。研削手段２０Ｂによる仕上げ研削の場合においても、研削手段２０Ａと同様に、図２に示した研削領域Ｐにおいて研削砥石２７ｂがウェーハＷの上面に接触して仕上げ研削を行う。なお、所望の仕上げ厚みは、例えば５〜１０μｍに設定されている。   During the rough grinding, the thickness measurement means 40A shown in FIG. 1 is used to constantly monitor the change in the thickness of the wafer W, and the rough grinding is finished when the wafer W reaches a desired thickness. In addition, the thickness of the wafer W after rough grinding is set to 100 to 200 μm. Moreover, the scrap 100 generated by rough grinding is 10 to 20 μm. Thereafter, the turntable 8 further rotates, and the holding table 10 holding the rough-ground wafer W is moved below the grinding means 20B. While rotating the holding table 10, the grinding means 20B rotates the spindle 21 by rotating the grinding wheel 27b at a predetermined rotational speed and lowering the grinding means 20B in the −Z direction, for example, by the grinding feed means 30B. The upper surface of the wafer W is finish-ground to a desired finish thickness with the grinding wheel 27b. Also in the case of finish grinding by the grinding means 20B, the grinding wheel 27b contacts the upper surface of the wafer W in the grinding region P shown in FIG. The desired finish thickness is set to 5 to 10 μm, for example.

仕上げ研削時にウェーハＷの外周縁Ｗｃを洗浄する場合においても、洗浄ノズル５０Ｂを、図２に示した噴射位置ＳＰ１に位置づけ、かつ、図３に示した保持テーブル１０の保持面１１ａに対して例えば４５°で噴射口５１を下向きにさせウェーハＷの外周縁Ｗｃに洗浄水５３を噴き付ける。このように位置づけられた洗浄ノズル５０Ｂの噴射口５１から洗浄水５３をウェーハＷの外周縁Ｗｃに噴き付けながら、仕上げ研削を行うことにより、ウェーハＷの外周縁Ｗｃを洗浄する。仕上げ研削の際には、外周縁Ｗｃから屑１００の多くが除去されているが、仮に外周縁Ｗｃに粗研削したときに発生した屑１００が残存していても洗浄水５３によって洗い流すことができる。仕上げ研削中は、図１に示した厚み測定手段４０Ｂを用いて常にウェーハＷの厚みの変化を監視し、ウェーハＷが所望の仕上げ厚みとなった時点で仕上げ研削が終了する。なお、洗浄ノズル５０Ｂについても、噴射位置ＳＰ２や噴射位置ＳＰ３に位置づけてもよい。   Even when the outer peripheral edge Wc of the wafer W is cleaned during finish grinding, the cleaning nozzle 50B is positioned at the injection position SP1 shown in FIG. 2, and the holding surface 11a of the holding table 10 shown in FIG. The cleaning nozzle 53 is sprayed on the outer peripheral edge Wc of the wafer W with the injection port 51 facing downward at 45 °. The outer peripheral edge Wc of the wafer W is cleaned by performing finish grinding while spraying the cleaning water 53 onto the outer peripheral edge Wc of the wafer W from the jet nozzle 51 of the cleaning nozzle 50B positioned as described above. At the time of finish grinding, most of the scraps 100 are removed from the outer peripheral edge Wc, but even if the scrap 100 generated when rough grinding is performed on the outer peripheral edge Wc, it can be washed away by the cleaning water 53. . During the finish grinding, the thickness measuring means 40B shown in FIG. 1 is used to constantly monitor the change in the thickness of the wafer W, and the finish grinding is finished when the wafer W reaches a desired finish thickness. Note that the cleaning nozzle 50B may also be positioned at the injection position SP2 or the injection position SP3.

このように、本発明に係る研削装置１は、回転手段１３で回転する保持テーブル１０が保持したウェーハＷの外周縁Ｗｃに洗浄水５３を噴き付ける洗浄ノズル５０Ａ，５０Ｂを備えたため、研削手段２０ＡでウェーハＷを粗研削するときは、洗浄ノズル５０ＡによってウェーハＷの外周縁Ｗｃに洗浄水５３を噴き付けて外周縁Ｗｃに付着した屑１００を洗い流すことができる。また、研削手段２０ＢでウェーハＷを仕上げ研削する際も、洗浄ノズル５０Ｂによって粗研削済みのウェーハＷの外周縁Ｗｃに洗浄水５３を噴き付けて洗浄できるため、例えば、仕上げ研削でウェーハＷを薄化して屑１００よりウェーハ厚みが小さくなったとき、外周縁Ｗｃに付着していた屑１００がウェーハＷの上面に引き上げられるおそれがない。したがって、本発明によれば、薄化後のウェーハＷの外周縁Ｗｃに欠けが発生することがなくなる。   Thus, since the grinding apparatus 1 according to the present invention includes the cleaning nozzles 50A and 50B that spray the cleaning water 53 onto the outer peripheral edge Wc of the wafer W held by the holding table 10 rotated by the rotating means 13, the grinding means 20A. When the wafer W is roughly ground, the cleaning water 53 can be sprayed onto the outer peripheral edge Wc of the wafer W by the cleaning nozzle 50A to wash away the scrap 100 adhering to the outer peripheral edge Wc. Further, when the grinding means 20B finish-grinds the wafer W, the washing water 53 can be sprayed onto the outer peripheral edge Wc of the coarsely ground wafer W by the washing nozzle 50B, so that the wafer W is thinned by, for example, finish grinding. When the wafer thickness becomes smaller than the scrap 100, the scrap 100 attached to the outer peripheral edge Wc is not likely to be pulled up to the upper surface of the wafer W. Therefore, according to the present invention, no chipping occurs in the outer peripheral edge Wc of the thinned wafer W.

研削装置１は、例えば、図４に示すように、洗浄ノズル５０Ａ（５０Ｂ）が洗浄水５３を噴き付けるウェーハＷの外周縁部分の上方側から洗浄水６２を噴き付けて保持面１１ａに対してウェーハＷを押し付ける押付ノズル６０を備えてもよい。押付ノズル６０は、洗浄水６２を噴射する噴射口６１を備え、ウェーハＷの外周縁Ｗｃ部分の直上に位置づけられている。図４の例では、洗浄ノズル５０Ａ（５０Ｂ）の噴射口５１から洗浄水５３を噴射する所定の角度として、例えば、保持テーブル１０の保持面１１ａに対して下向きの２５°に設定されている。このように位置づけられた洗浄ノズル５０Ａ（５０Ｂ）の噴射口５１から洗浄水５３をウェーハＷの外周縁Ｗｃに噴き付けて洗浄するとともに、かかる外周縁部分に向けて押付ノズル６０の噴射口６１から洗浄水６２を噴き付けて外周縁Ｗｃを保持面１１ａに対して押し付けながら、ウェーハＷの外周縁Ｗｃに付着した屑１００を洗い流し、ウェーハＷを粗研削・仕上げ研削することができる。   For example, as shown in FIG. 4, the grinding device 1 sprays cleaning water 62 from the upper side of the outer peripheral edge portion of the wafer W to which the cleaning nozzle 50 </ b> A (50 </ b> B) sprays the cleaning water 53 to the holding surface 11 a. A pressing nozzle 60 that presses the wafer W may be provided. The pressing nozzle 60 includes an injection port 61 for injecting the cleaning water 62 and is positioned immediately above the outer peripheral edge Wc portion of the wafer W. In the example of FIG. 4, for example, the predetermined angle at which the cleaning water 53 is sprayed from the ejection port 51 of the cleaning nozzle 50 </ b> A (50 </ b> B) is set to 25 ° downward with respect to the holding surface 11 a of the holding table 10. The cleaning water 53 is sprayed from the spray nozzle 51 of the cleaning nozzle 50A (50B) positioned in this way onto the outer peripheral edge Wc of the wafer W for cleaning, and from the jet nozzle 61 of the pressing nozzle 60 toward the outer peripheral edge portion. While the cleaning water 62 is sprayed and the outer peripheral edge Wc is pressed against the holding surface 11a, the debris 100 adhering to the outer peripheral edge Wc of the wafer W can be washed away, and the wafer W can be roughly ground and finished.

このように、研削装置１に押付ノズル６０を備える場合は、押付ノズル６０から洗浄水６２を噴き付けてウェーハＷを下方に押し付けることができるため、洗浄ノズル５０Ａ（５０Ｂ）の所定の角度を４５°より小さい角度に設定しても、研削時にウェーハＷの外周縁Ｗｃが保持テーブルから浮き上がることはなく、外周縁Ｗｃを良好に洗浄することができる。   Thus, when the grinding apparatus 1 includes the pressing nozzle 60, the cleaning water 62 can be sprayed from the pressing nozzle 60 to press the wafer W downward, so that the predetermined angle of the cleaning nozzle 50A (50B) is set to 45. Even if the angle is set smaller than 0 °, the outer peripheral edge Wc of the wafer W does not float from the holding table during grinding, and the outer peripheral edge Wc can be cleaned well.

本発明は、ウェーハＷを粗研削・仕上げ研削する前に、ウェーハＷの外周縁Ｗｃの面取りされた部分を研削して除去する加工（エッジトリミング）を行う場合においても適用することができる。すなわち、ウェーハＷの外周縁Ｗｃにエッジトリミングを施すときに、洗浄ノズルによってウェーハＷの外周縁Ｗｃに洗浄水を噴き付けて洗浄してもよい。   The present invention can also be applied to processing (edge trimming) in which the chamfered portion of the outer peripheral edge Wc of the wafer W is ground and removed before the wafer W is subjected to rough grinding / finish grinding. That is, when edge trimming is performed on the outer peripheral edge Wc of the wafer W, cleaning water may be sprayed onto the outer peripheral edge Wc of the wafer W by the cleaning nozzle.

上記実施形態に示す研削装置１は、２つの研削手段２０Ａ，２０Ｂを備えた２軸の装置としたが、この装置構成に限定されず、１つの研削手段を備えた１軸の装置にも本発明を適用することができる。   The grinding apparatus 1 shown in the above embodiment is a biaxial apparatus provided with two grinding means 20A and 20B. However, the present invention is not limited to this apparatus configuration, and the present invention is also applied to a uniaxial apparatus provided with one grinding means. The invention can be applied.

１：研削装置 ２：装置ベース ３ａ，３ｂ：ステージ ４ａ，４ｂ：カセット
５：搬出入手段 ６：仮置きテーブル ７：洗浄手段 ８：ターンテーブル
９ａ：第１の搬送手段 ９ｂ：第２の搬送手段 １０：保持テーブル １１：ポーラス板 １２：枠体 １３：回転手段 １４ａ，１４ｂ：コラム １５：支柱 １６：ケース
１７ａ，１７ｂ：支持部
２０Ａ，２０Ｂ：研削手段 ２１：スピンドル ２２：モータ
２３：スピンドルハウジング ２４：ホルダ ２５：マウント ２６：研削ホイール
２７ａ，２７ｂ：研削砥石
３０Ａ，３０Ｂ：研削送り手段 ３１：ボールネジ ３２：モータ
３３：ガイドレール ３４：昇降板
４０Ａ，４０Ｂ：厚み測定手段 ４１：第１のゲージ ４２：第２のゲージ
５０Ａ，５０Ｂ：洗浄ノズル ５１：噴射口 ５２：洗浄水供給源 ５３：洗浄水
６０：押付ノズル ６１：噴射口 ６２：洗浄水 1: Grinding device 2: Device base 3a, 3b: Stage 4a, 4b: Cassette 5: Loading / unloading means 6: Temporary placing table 7: Cleaning means 8: Turntable 9a: First conveying means 9b: Second conveying means 10: holding table 11: porous plate 12: frame 13: rotating means 14a, 14b: column 15: support 16: cases 17a, 17b: support portions 20A, 20B: grinding means 21: spindle 22: motor 23: spindle housing 24 : Holder 25: Mount 26: Grinding wheels 27a, 27b: Grinding wheels 30A, 30B: Grinding feed means 31: Ball screw 32: Motor 33: Guide rail 34: Lift plate
40A, 40B: Thickness measuring means 41: First gauge 42: Second gauge 50A, 50B: Cleaning nozzle 51: Injection port 52: Cleaning water supply source 53: Cleaning water 60: Pressing nozzle 61: Injection port 62: Cleaning water

Claims (3)

円板状のウェーハを保持する保持テーブルと、該保持テーブルを回転させる回転手段と、環状に研削砥石を配設した研削ホイールを回転させ該保持テーブルが保持するウェーハを該研削砥石で研削する研削手段と、を備える研削装置であって、
該回転手段で回転する該保持テーブルが保持したウェーハの外周縁に洗浄水を噴き付ける洗浄ノズルを備える研削装置。 Grinding by which a holding table for holding a disk-shaped wafer, a rotating means for rotating the holding table, and a grinding wheel provided with a grinding wheel in an annular shape are rotated to grind the wafer held by the holding table with the grinding wheel A grinding device comprising means,
A grinding apparatus comprising a cleaning nozzle that sprays cleaning water onto an outer peripheral edge of a wafer held by the holding table rotated by the rotating means. 前記洗浄ノズルは、前記保持テーブルが保持したウェーハの前記外周縁に前記洗浄水を噴き付ける噴射口を備え、
該保持テーブルが保持したウェーハの外周側から保持面方向においてウェーハの外周縁の接線方向より内側に該洗浄ノズルを位置づけ、且つ該保持面に対して所定の角度で該噴射口を下向きにさせウェーハの外周縁に該洗浄水を噴き付ける請求項１記載の研削装置。 The cleaning nozzle includes an injection port for spraying the cleaning water to the outer peripheral edge of the wafer held by the holding table.
The cleaning nozzle is positioned on the inner side of the tangential direction of the outer peripheral edge of the wafer in the holding surface direction from the outer peripheral side of the wafer held by the holding table, and the injection port is directed downward at a predetermined angle with respect to the holding surface. The grinding apparatus according to claim 1, wherein the cleaning water is sprayed on the outer peripheral edge of the steel. 前記洗浄ノズルが前記洗浄水を噴き付けるウェーハの外周縁部分の上方側から洗浄水を噴き付けて該保持面に対してウェーハを押し付ける押付ノズルを備える請求項２記載の研削装置。   The grinding apparatus according to claim 2, further comprising a pressing nozzle that sprays cleaning water from above an outer peripheral edge portion of the wafer to which the cleaning nozzle sprays the cleaning water and presses the wafer against the holding surface.
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