JP2019116647A - Substrate holder and film deposition apparatus - Google Patents

Substrate holder and film deposition apparatus Download PDF

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Publication number
JP2019116647A
JP2019116647A JP2017250012A JP2017250012A JP2019116647A JP 2019116647 A JP2019116647 A JP 2019116647A JP 2017250012 A JP2017250012 A JP 2017250012A JP 2017250012 A JP2017250012 A JP 2017250012A JP 2019116647 A JP2019116647 A JP 2019116647A
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Prior art keywords
substrate
substrate holder
contact
abuts
frame
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JP6673894B2 (en
Inventor
秀隆 生長
Hidetaka Ikunaga
秀隆 生長
智洋 熊木
Tomohiro Kumaki
智洋 熊木
大和 阿部
Yamato ABE
大和 阿部
新 渡部
Arata Watabe
新 渡部
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2017250012A priority Critical patent/JP6673894B2/en
Priority to KR1020180124993A priority patent/KR102365614B1/en
Priority to CN201811362770.5A priority patent/CN109957765B/en
Priority to CN202211706317.8A priority patent/CN115874157A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/021Cleaning or etching treatments
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

To provide a substrate holder that can hold a substrate while suppressing occurrence of breakage in the substrate.SOLUTION: A substrate holder 30 for holding a substrate 2 while exposing a treatment region 21a of the substrate 2 includes: holding parts 310, 320 for holding both sides 21, 22 of the substrate 2 in non-contact with a corner part 24 of the substrate 2; an abutment part 330 abutting on an end face 23 of the substrate 2 in non-contact with the corner part 24 of the substrate 2.SELECTED DRAWING: Figure 1

Description

本発明は、基板ホルダ及び成膜装置に関する。   The present invention relates to a substrate holder and a film forming apparatus.

半導体デバイスに用いられる基板の成膜処理において、基板を垂直に立てた状態(被処理面が垂直となる姿勢)で支持し、成膜装置における各室間を搬送する方式がある。基板は、被処理面が外部に開放(露出)された状態で基板ホルダに保持され、さらに基板ホルダを支持する搬送手段により各室間を移動する(特許文献1)。基板ホルダの構成としては、上下2つの枠体で基板を挟み込み、ねじ等の締結具で枠体を締結することにより、基板を固定保持する構成が一例として挙げられる。   In a film formation process of a substrate used for a semiconductor device, there is a method of supporting the substrate in a vertically standing state (in which the surface to be treated is vertical) and transporting between chambers in the film formation apparatus. The substrate is held by the substrate holder in a state where the surface to be treated is opened (exposed) to the outside, and is further moved between the respective chambers by the transfer means for supporting the substrate holder (Patent Document 1). As a structure of a board | substrate holder, the structure which fixes and holds a board | substrate is mentioned as an example by pinching a board | substrate with two upper and lower frames, and fastening a frame with fasteners, such as a screw.

国際公開公報WO2016/017602号International Publication WO 2016/017602

図8は、従来例に係る基板ホルダの構成を示す模式的断面図(切断部端面図)である。図8に示すように、基板ホルダ130は、基板2の被処理領域を露出させる開口部を有し、基板2の被処理領域を含む第1面21と当接する第1枠体131と、基板2の第2面22と当接する第2枠体132と、からなり、ねじ34で締結されている。図8のC部に示すように、基板2の角部24(第1面21と基板側端面23との境目の部分、及び第2面22と基板側端面23との境目の部分)が、第1枠体131と第2枠体132に接触する構成となっている。そのため、締付けによる力や加熱時の熱膨張による変形等により、角部24においてチッピング(角が欠けてチップ(破片)が生じる)が発生してしまう。基板2の角部24は、基板製造時にバリが発生する部分であり、バリが欠けてチップを生じさせることで装置内が汚染される。また、チッピングは、当初は小さいものであっても、そこをとっかかりとして後の工程において破損範囲が広がりやすく、一度発生してしまうと、生産性に大きな影響を与える。対策の従来例として、基板の面取りがあるが、基板のコストが上がるという課題がある。   FIG. 8 is a schematic cross-sectional view (cut end view) showing the configuration of a substrate holder according to a conventional example. As shown in FIG. 8, the substrate holder 130 has an opening for exposing the processing region of the substrate 2, and the first frame 131 is in contact with the first surface 21 including the processing region of the substrate 2, and the substrate The second frame 132 is in contact with the second surface 22 of the second frame 132, and is fastened with a screw 34. As shown in part C of FIG. 8, the corner 24 of the substrate 2 (the boundary between the first surface 21 and the substrate-side end surface 23 and the boundary between the second surface 22 and the substrate-side end surface 23) is The first frame 131 and the second frame 132 are in contact with each other. Therefore, chipping (deterioration of the corners to generate chips (debris)) is generated at the corner portions 24 due to a force due to tightening, deformation due to thermal expansion at the time of heating, or the like. The corner portion 24 of the substrate 2 is a portion where burrs are generated during substrate manufacture, and the inside of the device is contaminated by chipping the burrs to generate chips. Moreover, even if chipping is small at first, the chipping tends to widen the damage range in the subsequent steps, and once it occurs, it has a great impact on productivity. Although there is chamfering of a substrate as a conventional example of a countermeasure, there exists a subject that the cost of a substrate goes up.

本発明は、基板の破損発生を抑制した基板の保持を可能とすることができる基板ホルダを提供することを目的とする。   An object of the present invention is to provide a substrate holder capable of holding a substrate in which the occurrence of breakage of the substrate is suppressed.

上記目的を達成するため、本発明の基板ホルダは、
基板の被処理領域を露出させて基板を保持する基板ホルダであって、
基板の角部には非接触で、基板の両面を挟持する挟持部と、
基板の角部には非接触で、基板の端面に突き当たる突き当て部と、
を備えることを特徴とする。
上記目的を達成するため、本発明の成膜装置は、
基板に成膜処理を行う成膜装置であって、
成膜室を含む複数の室と、
上記基板ホルダを支持し、前記複数の室の間を移動する基板搬送手段と、
を備えることを特徴とする。
In order to achieve the above object, the substrate holder of the present invention is
A substrate holder for holding a substrate by exposing a processing region of the substrate, the substrate holder comprising:
A sandwiching portion that sandwiches both sides of the substrate without contacting the corner of the substrate;
A non-contacting portion at a corner of the substrate, and an abutting portion which abuts on an end surface of the substrate;
And the like.
In order to achieve the above object, the film forming apparatus of the present invention is
A film forming apparatus for forming a film on a substrate, wherein
A plurality of chambers including a deposition chamber,
A substrate transfer unit for supporting the substrate holder and moving between the plurality of chambers;
And the like.

本発明によれば、基板の破損発生を抑制した基板の保持を可能とすることができる。   According to the present invention, the substrate can be held with the occurrence of breakage of the substrate suppressed.

本発明の実施例に係る基板ホルダの模式的断面図(切断部端面図)Typical cross-sectional view of the substrate holder according to the embodiment of the present invention (cutting end face view) 本発明の実施例に係る基板ホルダの模式的斜視分解図Typical perspective exploded view of a substrate holder according to an embodiment of the present invention 本発明の実施例に係る基板ホルダの模式的断面図(切断部端面図)Typical cross-sectional view of the substrate holder according to the embodiment of the present invention (cutting end face view) 本発明の実施例に係る基板ホルダの第2枠体の模式的平面図A schematic plan view of a second frame of a substrate holder according to an embodiment of the present invention 本発明の実施例の変形例に係る基板ホルダの模式的断面図(切断部端面図)Typical cross-sectional view of a substrate holder according to a modification of the embodiment of the present invention (cut end view) 本発明の実施例の変形例に係る基板ホルダの模式的断面図(切断部端面図)Typical cross-sectional view of a substrate holder according to a modification of the embodiment of the present invention (cut end view) 本発明の実施例2に係る基板ホルダの第2枠体の模式的平面図Typical top view of the 2nd frame of the substrate holder concerning Example 2 of the present invention 従来例に係る基板ホルダの模式的断面図(切断部端面図)Typical cross-sectional view of a substrate holder according to the prior art (cut end view) 本発明の実施例におけるスパッタリング装置の概略図Schematic of sputtering apparatus in the embodiment of the present invention 本発明の実施例に係る成膜装置の概略図Schematic of the film-forming apparatus based on the Example of this invention 成膜処理のフローチャートの一例Example of flow chart of film forming process

以下に図面を参照して、この発明を実施するための形態を、実施例に基づいて例示的に詳しく説明する。ただし、この実施の形態に記載されている構成部品の寸法、材質、形状それらの相対配置などは、発明が適用される装置の構成や各種条件により適宜変更されるべきものである。すなわち、この発明の範囲を以下の実施の形態に限定する趣旨のものではない。   Hereinafter, with reference to the drawings, modes for carrying out the present invention will be exemplarily described in detail based on examples. However, the dimensions, materials, shapes, etc. of the components described in this embodiment should be changed as appropriate depending on the configuration of the apparatus to which the invention is applied and various conditions. That is, the scope of the present invention is not intended to be limited to the following embodiments.

(実施例1)
<成膜装置の全体構成>
図10は、本発明の実施例に係る成膜装置1の全体構成を概略的に示した模式図である。成膜装置1は、成膜処理される基板2が収容されるストッカ室11と、基板2の加熱処理を行う加熱室12と、基板2の被処理面に成膜処理を行う成膜室13と、を備える。成膜室13には、成膜処理に先立って基板2の被処理面の洗浄等の前処理やエッチング処理を行うための基板処理装置14と、基板2の被処理面に成膜処理を行う成膜処理部としてのスパッタリング装置15と、を備える。本実施例の成膜装置1は、基板2を縦に立てた状態(被処理面が垂直となる姿勢)で各室間を搬送する構成となっている(図9参照)。
Example 1
<Overall configuration of film forming apparatus>
FIG. 10 is a schematic view schematically showing an entire configuration of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 includes a stocker chamber 11 in which a substrate 2 to be film-formed is accommodated, a heating chamber 12 which heats the substrate 2, and a film-forming chamber 13 which forms a film on the processing target surface of the substrate 2. And. In the film forming chamber 13, a film forming process is performed on the surface to be processed of the substrate 2 and a substrate processing apparatus 14 for performing pretreatment and etching such as cleaning of the surface to be processed of the substrate 2 prior to the film forming process. And a sputtering apparatus 15 as a film forming unit. The film forming apparatus 1 of the present embodiment is configured to transport between the respective chambers in a state in which the substrate 2 is vertically stood (in which the surface to be treated is vertical) (see FIG. 9).

図11は、本実施例における成膜処理のフローチャートの一例である。基板2は、ストッカ室11から加熱室12へ(S101)、加熱室12から成膜室13の基板処理装置14へ(S103)、基板処理装置14からスパッタリング装置15へ(S105)、順次搬送され、成膜処理が施される。基板2は、加熱室12でヒータ121により加熱処理された後(S102)、先ず、成膜室13の基板処理装置14による表面処理を施される(S104)。表面処理が施された基板2は、次に、スパッタリング装置15による各種異なる材料からなるターゲット151、152、153を用いたスパッタリング処理が施され(S106)、成膜処理が終了する。ここで示す成膜処理のフローはあくまで一例であり、ここで示す工程内容に限定されるものではない。   FIG. 11 is an example of a flowchart of the film forming process in the present embodiment. The substrate 2 is sequentially transported from the stocker chamber 11 to the heating chamber 12 (S101), from the heating chamber 12 to the substrate processing apparatus 14 of the film forming chamber 13 (S103), and from the substrate processing apparatus 14 to the sputtering apparatus 15 (S105). The film forming process is performed. After the substrate 2 is heat-treated by the heater 121 in the heating chamber 12 (S102), first, the surface treatment of the film forming chamber 13 by the substrate processing apparatus 14 is performed (S104). Next, the substrate 2 subjected to the surface treatment is subjected to a sputtering process using targets 151, 152 and 153 made of various different materials by the sputtering apparatus 15 (S106), and the film forming process is completed. The flow of the film-forming process shown here is an example to the last, and it is not limited to the process content shown here.

本実施例に係る成膜装置1は、例えば、前処理を伴う種々の電極形成に適用可能である。具体例としては、例えば、FC−BGA(Flip−Chip Ball Grid Array)実装基板向けのメッキシード膜や、SAW(Surface Acoustic Wave)デバイス向けのメタル積層膜の成膜が挙げられる。また、LEDのボンディング部における導電性硬質膜、MLCC(Multi−Layered Ceramic Capacitor)の端子部膜の成膜なども挙げられる。その他、電子部品パッケージにおける電磁シールド膜やチップ抵抗器の端子部膜の成膜にも適用可能である。処理基板2のサイズは、縦横200mm×200mm、厚み0.7〜6.0mmのものが例
示できる。基板2の材質としては、ガラス、アルミナ、セラミック、LTCC(Low
Temperature Co−fired Ceramics:低温同時焼成セラミックス)等が挙げられる。
The film-forming apparatus 1 which concerns on a present Example is applicable to the various electrode formation accompanied by pre-processing, for example. Specific examples thereof include, for example, deposition of a plating seed film for an FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device. In addition, a conductive hard film in the bonding portion of the LED, a film formation of a terminal portion film of MLCC (Multi-Layered Ceramic Capacitor), and the like can also be mentioned. In addition, it is applicable also to film-forming of the electromagnetic shielding film in an electronic component package, and the terminal part film of a chip resistor. The size of the processing substrate 2 may be, for example, 200 mm × 200 mm in height and width and 0.7 to 6.0 mm in thickness. The material of the substrate 2 is glass, alumina, ceramic, LTCC (Low
Temperature Co-fired Ceramics: low temperature co-fired ceramics) and the like.

<基板搬送構成及びスパッタリング装置>
基板2は、上述したように、垂直に立てた状態で成膜装置1の各室間を搬送され、スパッタリング室51(チャンバ)内においても、被処理面21が垂直となる(被処理面21が水平方向に向いた)姿勢で設置される。図9に示すように、基板2は、基板ホルダ30により、被処理面21が開放(露出)された状態で被処理領域外周の周縁部が挟持され保持される。基板2を保持する基板ホルダ30は、基板ホルダ支持部43により支持される。基板ホルダ支持部43は、基板搬送手段としての車輪431を下方に備え、基板ホルダ30を支持した状態でスパッタリング室51内をスパッタリング室51の底面に敷設されたレール432に乗って移動可能に構成されている。なお、ここで言う垂直とは、スパッタリング室51の底面あるいはレール432上面(基板搬送面)に対して垂直であることであり、装置構成によっては、重力方向(鉛直方向)と一致しない場合がある。同様に、ここで言う水平方向も、重力方向と直交する方向と一致しない場合がある。すなわち、本実施例では、各室の内壁における基板ホルダ支持部43の設置面が水平面であることを前提として上下左右の方向を規定した説明としているが、該設置面の方向が変われば、上下左右方向の規定もそれに合わせて変化することは言うまでもない。
<Substrate transfer configuration and sputtering apparatus>
As described above, the substrate 2 is transported between the chambers of the film forming apparatus 1 in a vertically standing state, and the processing surface 21 is vertical also in the sputtering chamber 51 (chamber) (processing surface 21) Is oriented horizontally). As shown in FIG. 9, the substrate holder 30 holds and holds the peripheral edge of the outer periphery of the processing area in a state where the processing surface 21 is opened (exposed) by the substrate holder 30. The substrate holder 30 holding the substrate 2 is supported by the substrate holder support 43. The substrate holder support portion 43 is provided with a wheel 431 as a substrate transfer means at the lower side, and configured to be movable on the rails 432 laid on the bottom surface of the sputtering chamber 51 in the sputtering chamber 51 with the substrate holder 30 supported. It is done. The term "perpendicular" as used herein means being perpendicular to the bottom surface of the sputtering chamber 51 or the upper surface of the rail 432 (substrate transfer surface), and may not coincide with the gravity direction (vertical direction) depending on the apparatus configuration. . Similarly, the horizontal direction referred to here may not coincide with the direction orthogonal to the gravity direction. That is, in the present embodiment, assuming that the installation surface of the substrate holder support 43 on the inner wall of each chamber is a horizontal plane, the description is made to define the directions of the upper, lower, right and left. Needless to say, the left-right direction also changes accordingly.

スパッタリング装置15のスパッタリング室51は、排気装置56により、予め所定の高真空圧まで排気された状態となっている。基板ホルダ30は、スパッタリング室51内を一定の速度で移動し、その間に、基板2に対してカソードユニット50による成膜処理が施される。スパッタリング室51内において、基板2(基板ホルダ30)とカソードユニット50は、水平方向に互いに対向するように配置される。スパッタリング室51は、排気装置56により、スパッタリングプロセスに好適な真空度(例えば、2×10Pa〜2×10−5Pa)に調整されるとともに、ガス供給源57から、スパッタリングガスが流量制御されて供給される。これにより、スパッタリング室51の内部にスパッタリング雰囲気が形成される。スパッタリングガスとしては、例えばAr、Kr、Xe等の希ガスや成膜用の反応性ガスが用いられる。 The sputtering chamber 51 of the sputtering device 15 is in a state of being evacuated to a predetermined high vacuum pressure in advance by the exhaust device 56. The substrate holder 30 moves in the sputtering chamber 51 at a constant speed, and in the meantime, the film forming process by the cathode unit 50 is performed on the substrate 2. In the sputtering chamber 51, the substrate 2 (substrate holder 30) and the cathode unit 50 are arranged to face each other in the horizontal direction. The sputtering chamber 51 is adjusted to a degree of vacuum (for example, 2 × 10 Pa to 2 × 10 −5 Pa) suitable for the sputtering process by the exhaust device 56, and the flow rate of the sputtering gas is controlled from the gas supply source 57. Supplied. Thus, a sputtering atmosphere is formed inside the sputtering chamber 51. As a sputtering gas, for example, a rare gas such as Ar, Kr, or Xe or a reactive gas for film formation is used.

板状の成膜材料であるターゲット151は、基板2の搬送経路、すなわち基板2の被処理面21に対して平行となるように配置される。ターゲット151における基板2と対向する側とは反対側には、カソード電極251が密着して設けられている。カソード電極251には電源55が接続されており、スパッタリング室51は接地されている。電源55による電圧印加において、カソード電極251が陰極となり、スパッタリング室51の壁部が陽極となる。   The target 151 which is a plate-like film forming material is disposed parallel to the transport path of the substrate 2, that is, the processing surface 21 of the substrate 2. A cathode electrode 251 is provided in close contact with the side of the target 151 opposite to the side facing the substrate 2. A power source 55 is connected to the cathode electrode 251, and the sputtering chamber 51 is grounded. In voltage application by the power source 55, the cathode electrode 251 is a cathode, and the wall of the sputtering chamber 51 is an anode.

<スパッタリング>
上述したスパッタリング雰囲気の形成と、電源55からカソード電極251への電圧印加により、ターゲット151の基板2との対向面近傍にプラズマ領域が生成される。プラズマ領域の生成により生成されるスパッタリングガスイオンとターゲット151との衝突により、ターゲット粒子がターゲット151の基板2との対向面から放出される。ターゲット151から放出されたターゲット粒子が基板2に向かって飛翔、堆積することで基板2の被処理面21に成膜がなされる。ターゲット152、153についても、ターゲット151とは材料が異なるのみで、スパッタリングによる成膜処理メカニズムは同様である。
<Sputtering>
By the formation of the sputtering atmosphere described above and the application of a voltage from the power source 55 to the cathode electrode 251, a plasma region is generated in the vicinity of the facing surface of the target 151 with the substrate 2. Target particles are emitted from the surface of the target 151 facing the substrate 2 due to the collision of sputtering gas ions generated by the generation of the plasma region and the target 151. The target particles released from the target 151 fly toward the substrate 2 and are deposited, whereby a film is formed on the surface 21 to be processed of the substrate 2. The targets 152 and 153 are also different in material from the target 151, and the film formation processing mechanism by sputtering is the same.

<基板ホルダ30の構成(本実施例の特徴)>
図1〜4を参照して、本実施例の特徴である基板ホルダ30の構成について説明する。
図1は、本発明の実施例に係る基板ホルダの模式的部分断面図(切断部端面図)である。図2は、本発明の実施例に係る基板ホルダの模式的斜視分解図である。図3は、本発明の実施例に係る基板ホルダの模式的断面図(切断部端面図)であり、基板2の基板ホルダ30への組み付けの様子を説明する図である。図4は、本発明の実施例に係る基板ホルダの第2枠体の模式的平面図である。
<Configuration of Substrate Holder 30 (Features of this Embodiment)>
The configuration of the substrate holder 30, which is a feature of the present embodiment, will be described with reference to FIGS.
FIG. 1 is a schematic partial cross-sectional view (cut end view) of a substrate holder according to an embodiment of the present invention. FIG. 2 is a schematic perspective exploded view of a substrate holder according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view (cutaway end view) of the substrate holder according to the embodiment of the present invention, and is a view for explaining how the substrate 2 is attached to the substrate holder 30. FIG. 4 is a schematic plan view of a second frame of the substrate holder according to the embodiment of the present invention.

基板ホルダ30は、上述したように、基板2の被処理領域を露出させて基板2を保持するものであり、概略、第1の枠体である基板押え31と、第2の枠体である基板ホルダ本体32と、で基板2の両面を挟持することで基板2を保持する。基板2の一方の面(第1の面)である被処理面21は、上述した成膜処理等が施される被処理領域21aと、その外側(外周)を囲む周縁領域21bと、で構成される。   As described above, the substrate holder 30 exposes the processing region of the substrate 2 to hold the substrate 2 and is roughly the substrate pressing member 31 which is the first frame and the second frame. The substrate 2 is held by sandwiching the both surfaces of the substrate 2 with the substrate holder body 32. The to-be-processed surface 21 which is one surface (first surface) of the substrate 2 is composed of the to-be-processed region 21a to be subjected to the film forming process described above and the peripheral region 21b surrounding the outside (outer periphery) thereof. Be done.

基板押え31は、基板2の被処理面21の周縁領域21bにおける、基板端部、すなわち、被処理面21と基板2の側端面23との境目の角部24(基板端部)よりも内側の位置において、被処理面21に当接する当接面(第1当接部)310を有する。角部24よりもどの程度内側で当接面310を被処理面21の周縁領域21bに当接させるかは、チッピングの発生を抑制することができる範囲で適宜設定される。当接面310は、基板押え31において基板ホルダ本体32との対向方向に突出する凸状部311の先端面である。凸状部311は、基板押え31の基板ホルダ本体32との対向部において略矩形の環状に形成されている。基板押え31の基板ホルダ本体32との対向部における凸状部311よりも外側には、基板押え31を基板2の角部24に対して非接触にする隙間を形成するための溝部(凹部)313が形成されている。また、基板押え31の基板ホルダ本体32との対向部における凸状部311よりも内側は、基板2の被処理面21を外部に開放(露出)する開口部312が形成されている。基板押え31は、基板2の被処理領域21aの周囲を囲む額縁状の部材である。   The substrate retainer 31 is inside the substrate end in the peripheral region 21b of the processing surface 21 of the substrate 2, that is, inside the corner 24 (substrate end) of the boundary between the processing surface 21 and the side end surface 23 of the substrate 2. In the position, the contact surface (first contact portion) 310 that contacts the processing surface 21 is provided. It is suitably set in the range which can suppress generation | occurrence | production of a chipping about how much the contact surface 310 is made to contact | abut to the peripheral region 21b of the to-be-processed surface 21 inside inside rather than the corner 24. The contact surface 310 is a tip end surface of the convex portion 311 which protrudes in the direction opposite to the substrate holder main body 32 in the substrate press 31. The convex portion 311 is formed in a substantially rectangular annular shape at a portion facing the substrate holder main body 32 of the substrate retainer 31. A groove (concave portion) for forming a gap that makes the substrate retainer 31 not contact the corner 24 of the substrate 2 outside the convex portion 311 in the portion of the substrate retainer 31 facing the substrate holder body 32 313 are formed. Further, on the inner side of the convex portion 311 in the facing portion of the substrate holder 31 to the substrate holder main body 32, an opening 312 for exposing (exposed) the processing surface 21 of the substrate 2 to the outside is formed. The substrate retainer 31 is a frame-like member surrounding the periphery of the processing area 21 a of the substrate 2.

基板ホルダ本体32は、基板2の他方の面(第2の面)である、被処理面21とは反対側の裏面22における、裏面22と基板2の側端面23との境目の角部24よりも内側の位置において、裏面22に当接する当接面(第2当接部)320を有する。角部24よりもどの程度内側で当接面320を裏面22に当接させるかは、チッピングの発生を抑制することができる範囲で適宜設定される。当接面320は、基板ホルダ本体32において基板押え31との対向方向に突出する凸状部321の先端面である。凸状部321は、基板ホルダ本体32の基板押え31との対向部において略矩形の環状に形成されている。基板ホルダ本体32の基板押え31との対向部における凸状部321よりも外側には、基板ホルダ本体32を基板2の角部24に対して非接触にする隙間を形成するための溝部(凹部)323が形成されている。また、基板ホルダ本体32の基板押え31との対向部における凸状部321よりも内側には、基板2の裏面22に対して隙間を空けて対向する凹部322が形成されている。なお、凹部322に代えて、基板押え31の開口部312と同様、開口部を設けても良い。すなわち、基板2の裏面22を外部に開放するホルダ構成としてもよい。   The substrate holder main body 32 is the other surface (second surface) of the substrate 2 and is a corner 24 of the boundary between the back surface 22 and the side end surface 23 of the substrate 2 on the back surface 22 opposite to the treated surface 21. At an inner position, a contact surface (second contact portion) 320 that contacts the back surface 22 is provided. It is suitably set in the range which can suppress generation | occurrence | production of a chipping about how much the contact surface 320 is made to contact | abut the back surface 22 inside rather than the corner | angular part 24. FIG. The contact surface 320 is a tip end surface of the convex portion 321 that protrudes in the direction opposite to the substrate retainer 31 in the substrate holder main body 32. The convex portion 321 is formed in a substantially rectangular annular shape at a portion of the substrate holder main body 32 facing the substrate retainer 31. A groove (a recessed portion for forming a gap that makes the substrate holder main body 32 not to be in contact with the corner 24 of the substrate 2 on the outer side than the convex portion 321 in the facing portion of the substrate holder main body 32 with the substrate presser 31 ) 323 are formed. Further, on the inner side of the convex portion 321 in the portion of the substrate holder main body 32 facing the substrate presser 31, a recessed portion 322 is formed facing the back surface 22 of the substrate 2 with a gap therebetween. Note that, instead of the concave portion 322, an opening may be provided as in the case of the opening 312 of the substrate retainer 31. That is, the back surface 22 of the substrate 2 may be opened to the outside.

基板ホルダ本体32には、基板2の基板ホルダ本体32に対する位置決めを行うための突き当て部材である位置決めピン33が、ねじ35により基板ホルダ本体32に固定されている。位置決めピン33は、基板2の側端面23に向かって、基板2に垂直な方向における幅が徐々に狭くなる先端形状を有しており、その先端面330が突き当て部として基板2の側端面23に当接する。ここで、基板2に垂直な方向とは、基板2の厚み方向、基板押え31と基板ホルダ本体32の対向方向、図2等におけるZ軸方向等と同義である。位置決めピン33の先端面330の基板2に垂直な方向における幅は、基板2の厚みよりも小さく、角部24との接触を避ける位置、本実施例では、上記方向における中央部において、側端面22に当接する。先端面330が側端面22と当接する位置は、チッピング
の発生を抑制することができる位置であれば、上記中央部でなくてもよい。
Positioning pins 33, which are abutment members for positioning the substrate 2 relative to the substrate holder body 32, are fixed to the substrate holder body 32 by screws 35. The positioning pin 33 has a tip shape in which the width in the direction perpendicular to the substrate 2 gradually narrows toward the side end surface 23 of the substrate 2, and the tip surface 330 serves as a butting portion. Abuts on 23. Here, the direction perpendicular to the substrate 2 is synonymous with the thickness direction of the substrate 2, the opposing direction of the substrate holder 31 and the substrate holder main body 32, the Z-axis direction in FIG. The width in the direction perpendicular to the substrate 2 of the front end surface 330 of the positioning pin 33 is smaller than the thickness of the substrate 2 and is a position that avoids contact with the corner 24, in this embodiment the side end face in the center in the above direction. Abuts on 22. The position where the tip end surface 330 abuts on the side end surface 22 may not be the above-mentioned central portion as long as the occurrence of chipping can be suppressed.

基板押え31と基板ホルダ本体32は、位置決めピン33が基板2の端面23に突き当たり、当接面310、320が基板2を挟持した状態で、締結手段としてのねじ34により、互いに締結固定される。基板押え31と基板ホルダ本体32は、複数のねじ34により複数箇所で締め付けられ、本実施例では、ねじ34の1個当たりのクランプ力を5〜40cN/mとしている。基板押え31のねじ孔314と基板ホルダ本体32のねじ穴324は、基板2に対して、位置決めピン33と基板2の突き当て位置よりも外側に設けられている。ねじ34の締結により、当接面310、320が、基板2の角部24には非接触で、基板2の両面を挟持する挟持部を構成することになる。基板押え31、基板ホルダ本体32、位置決めピン33は、本実施例ではSUSを用いて製作しているが、ある程度の硬さを持つ金属であれば他の金属を用いてもよい。また、所望の位置決め保持機能が得られるのであれば適宜他の材料を採用してよい。   The substrate holding member 31 and the substrate holder main body 32 are fastened and fixed to each other by the screw 34 as fastening means in a state where the positioning pin 33 abuts against the end surface 23 of the substrate 2 and the contact surfaces 310 and 320 sandwich the substrate 2. . The substrate holder 31 and the substrate holder main body 32 are tightened at a plurality of locations by a plurality of screws 34. In this embodiment, the clamping force per screw 34 is 5 to 40 cN / m. The screw holes 314 of the substrate retainer 31 and the screw holes 324 of the substrate holder main body 32 are provided outside the abutting positions of the positioning pins 33 and the substrate 2 with respect to the substrate 2. Due to the fastening of the screw 34, the contact surfaces 310 and 320 form a sandwiching part that sandwiches both sides of the substrate 2 without contacting the corner 24 of the substrate 2. Although the substrate holder 31, the substrate holder body 32, and the positioning pin 33 are manufactured using SUS in this embodiment, other metals may be used as long as they have a certain degree of hardness. Further, as long as a desired positioning and holding function can be obtained, other materials may be adopted as appropriate.

基板押え31の当接面310と基板ホルダ本体32の当接面320がそれぞれ、基板2の角部24よりも内側で角部24とは非接触で、基板2の両面と接触する構成とすることで、角部24に対して基板2の厚み方向(Z方向)に働く力を緩和することができる。また、位置決めピン33も、基板2の角部24よりも内側で角部24とは非接触で、基板2の端面23と接触する構成とすることで、角部24に対して基板2の幅方向(基板2の面21、22に平行な方向、XY方向)に働く力を緩和することができる。このように、基板ホルダ30が基板2の角部24に接触する部分を有さないことで、面取りを行っていない基板2においてチッピングが発生することを抑制することができる。すなわち、本実施例によれば、基板の破損発生を抑制した基板の保持が可能となる。   The contact surface 310 of the substrate holder 31 and the contact surface 320 of the substrate holder main body 32 are in contact with both surfaces of the substrate 2 inside the corner 24 of the substrate 2 and not in contact with the corner 24. Thus, the force acting on the corner 24 in the thickness direction (Z direction) of the substrate 2 can be relaxed. Further, the positioning pin 33 is also in contact with the end face 23 of the substrate 2 inside the corner 24 of the substrate 2 and in non-contact with the corner 24, whereby the width of the substrate 2 with respect to the corner 24 The force acting in the direction (direction parallel to the surfaces 21 and 22 of the substrate 2, XY direction) can be relaxed. As described above, since the substrate holder 30 does not have a portion in contact with the corner portion 24 of the substrate 2, generation of chipping can be suppressed in the substrate 2 which is not chamfered. That is, according to the present embodiment, it is possible to hold the substrate with the occurrence of breakage of the substrate suppressed.

<基板2の基板ホルダ30への組み付け>
図3に示すように、基板2の基板ホルダ30への組み付けにおいては、先ず、基板2を基板ホルダ本体32における所定の基板収容部に載置する、具体的には、凸状部321の当接面320上に載せる(図3(A))。その際、基板2の裏面22を当接面320に載せつつ基板2の側端面23を位置決めピン33の先端面330に突き当てることで、基板2を基板ホルダ本体32に対して位置決めすることができる(図3(B))。基板2が位置決めされた基板ホルダ32に対し、額縁状の基板押え31を基板2の外周縁(周辺領域21b)を覆うようにかぶせて、基板2を当接面310、320で挟んだ状態とする。そして、ねじ34で締結することにより、基板2と基板押え31と基板ホルダ本体32とが一体的に固定される(図3(C))。
<Assembly of Substrate 2 to Substrate Holder 30>
As shown in FIG. 3, in assembling the substrate 2 to the substrate holder 30, first, the substrate 2 is placed on a predetermined substrate storage portion in the substrate holder main body 32. It is placed on the contact surface 320 (FIG. 3A). At this time, the substrate 2 is positioned with respect to the substrate holder main body 32 by abutting the side end surface 23 of the substrate 2 against the end surface 330 of the positioning pin 33 while placing the back surface 22 of the substrate 2 on the contact surface 320. It can be done (FIG. 3 (B)). The substrate holder 32 on which the substrate 2 is positioned is covered with the frame-like substrate retainer 31 so as to cover the outer peripheral edge (peripheral region 21 b) of the substrate 2 and the substrate 2 is sandwiched between the contact surfaces 310 and 320. Do. Then, the substrate 2, the substrate retainer 31 and the substrate holder main body 32 are integrally fixed by fastening them with the screws 34 (FIG. 3 (C)).

<位置決めピン33の配置>
図4に示すように、位置決めピン33は複数設けられる。複数備える位置決めピン33は、基板2の4辺のうち互いに対向する2辺のいずれか一方の辺にのみ突き当たるように配置される。すなわち、上記2辺のいずれか一方の辺にのみ位置決めピン33が突き当たるようにし、他方の辺には基板2に沿った方向の力が基板ホルダ30から作用しないように構成する。つまり、複数の位置決めピン33は、突き当て方向において互いに対向する配置とはならない。基板2における位置決めピン33と突き当たる部分とは反対側の部分を、基板2に沿った方向に位置規制しない構成とすることで、基板2や基板ホルダ30における寸法誤差や熱膨張等による寸法変化などを吸収して、基板2を位置決めすることができる。
<Arrangement of Positioning Pin 33>
As shown in FIG. 4, a plurality of positioning pins 33 are provided. The plurality of positioning pins 33 are disposed so as to abut only one of two sides of the substrate 2 facing each other. That is, the positioning pin 33 is made to abut on only one of the two sides, and the force in the direction along the substrate 2 does not act on the other side from the substrate holder 30. That is, the plurality of positioning pins 33 are not arranged to face each other in the butting direction. By setting the position on the side opposite to the portion where the positioning pin 33 in the substrate 2 abuts on the substrate 2 in the direction along the substrate 2, the dimensional change in the substrate 2 or the substrate holder 30 due to dimensional error or thermal expansion etc. To position the substrate 2.

また、複数の位置決めピン33は、基板2の4辺のうち互いに対向しない2辺のうちの一方の辺における端面23に突き当たる位置と、他方の辺における端面23と突き当たる位置と、にそれぞれ配置される。すなわち、基板2に沿った方向における2方向において位置決めを行うことで、基板2を基板ホルダ30に対して精度よく位置決めすることがで
きる。また、基板2の4辺のうちの1辺に対してそれぞれ異なる位置で突き当たるように複数の位置決めピン33を配置することで、より精度の高い位置決めを行うことができる。さらに、位置決めピン33が突き当たる基板2の辺を、基板2が垂直に立てられた際の基板2の4辺のうちの下端の辺とすることで、基板2搬送時において、基板2の下端面となる端面23を位置決めピン33で支える構成となる。これにより、より安定した基板2の保持状態を実現することができる。
In addition, the plurality of positioning pins 33 are disposed at a position that abuts on the end face 23 on one of two sides not facing each other among the four sides of the substrate 2 and a position to abut on the end face 23 on the other side. Ru. That is, by performing positioning in two directions in the direction along the substrate 2, the substrate 2 can be accurately positioned relative to the substrate holder 30. Further, by arranging the plurality of positioning pins 33 so as to abut on one of four sides of the substrate 2 at different positions, positioning with higher accuracy can be performed. Further, by setting the side of the substrate 2 against which the positioning pin 33 abuts is the side of the lower end of the four sides of the substrate 2 when the substrate 2 is erected vertically, the lower end surface of the substrate 2 during transportation of the substrate 2 It becomes the structure which supports the end surface 23 which becomes with the positioning pin 33. FIG. Thereby, a more stable holding state of the substrate 2 can be realized.

<変形例1>
図5(A)は、本発明の実施例1の変形例1に係る基板ホルダ30aの模式的部分断面図(切断部端面図)である。本変形例において実施例1と共通する構成については同じ符号を付し、再度の説明は省略する。図5(A)に示すように、本変形例では、位置決めピン33が、基板ホルダ本体32の溝部323に配置される構成となっている。また、基板押え31と基板ホルダ本体32とが、ねじ34で締め付けられる部分において互いに当接する構成となっている。さらに、基板ホルダ本体32において、基板押え31と当接する当接面325と、基板2と当接する当接面320とが、(図2等のZ方向において)互いに同じ高さとなるように構成されている。かかる構成によれば、基板ホルダ本体32の製作において、溝部323を形成する工程によって、当接面320、325、及び位置決めピン23の設置部を形成することができ、製造コストの低減を図ることができる。
<Modification 1>
FIG. 5A is a schematic partial cross-sectional view (cut end view) of a substrate holder 30a according to a first modification of the first embodiment of the present invention. The same reference numerals as in the first embodiment denote the same parts in the present modification and a description thereof will not be repeated. As shown in FIG. 5A, in the present modification, the positioning pin 33 is arranged in the groove 323 of the substrate holder main body 32. In addition, the substrate presser 31 and the substrate holder main body 32 are configured to abut each other at a portion to which the screw 34 is tightened. Furthermore, in the substrate holder main body 32, the contact surface 325 in contact with the substrate presser 31 and the contact surface 320 in contact with the substrate 2 are configured to have the same height (in the Z direction of FIG. 2 etc.) ing. According to this configuration, in the process of manufacturing the substrate holder body 32, the installation portions of the contact surfaces 320, 325 and the positioning pin 23 can be formed by the step of forming the groove portion 323, thereby reducing the manufacturing cost. Can.

<変形例2>
図5(B)は、本発明の実施例1の変形例2に係る基板ホルダ30bの模式的部分断面図(切断部端面図)である。本変形例において実施例1、変形例1と共通する構成については同じ符号を付し、再度の説明は省略する。図5(B)に示すように、変形例2では、変形例1と異なり、基板押え31において、基板ホルダ本体32と当接する当接面315と、基板2と当接する当接面310とが、(図2等のZ方向において)互いに同じ高さとなるように構成されている。かかる構成によれば、基板押え31の製作において、溝部313を形成する工程によって、当接面310、315も形成することができ、製造コストの低減を図ることができる。
<Modification 2>
FIG. 5 (B) is a schematic partial cross-sectional view (cut end view) of a substrate holder 30b according to a second modification of the first embodiment of the present invention. The same reference numerals as in the first embodiment and the first embodiment denote the same parts in this modification, and a description thereof will not be repeated. As shown in FIG. 5B, in the second modification, unlike the first modification, the contact surface 315 contacting the substrate holder body 32 and the contact surface 310 contacting the substrate 2 in the substrate holder 31 , (In the Z direction in FIG. 2 and the like) are configured to have the same height. According to this configuration, the contact surfaces 310 and 315 can also be formed by the step of forming the groove portion 313 in the manufacture of the substrate holder 31, and the manufacturing cost can be reduced.

<変形例3>
図6(A)は、本発明の実施例1の変形例3に係る基板ホルダ30cの模式的部分断面図(切断部端面図)である。本変形例において実施例1、変形例1、2と共通する構成については同じ符号を付し、再度の説明は省略する。図6(A)に示すように、変形例3では、基板ホルダ本体32の基板押え31との対向部における凸状部321よりも外側の領域を、実施例1等の溝部323のような溝状の凹凸形状を排した構成としている。具体的には、基板ホルダ本体32における当接面320よりも外側の領域が、基板2との非接触状態を形成すべく基板2との間に隙間を形成する単一の面326で構成されている。そして、その単一の面326の一部が、位置決めピン33の設置面及び基板押え31の当接面315と当接する面を兼ねる構成となっている。かかる構成によれば、基板ホルダ本体32を、実施例1のような溝部323や位置決めピン33の設置部の形成を必要としないシンプルな構成とすることができ、基板ホルダ本体32の製作におけるコストの低減を図ることができる。
<Modification 3>
FIG. 6A is a schematic partial cross-sectional view (cutting end view) of a substrate holder 30c according to a third modification of the first embodiment of the present invention. The same reference numerals as in the first embodiment and the first and second modifications in this modification denote the same parts, and a description thereof will not be repeated. As shown in FIG. 6A, in the third modification, the groove outside the convex portion 321 in the portion of the substrate holder main body 32 facing the substrate retainer 31 is a groove like the groove portion 323 of the first embodiment or the like. It is set as the structure which excluded the uneven | corrugated shape of shape. Specifically, the region outside the contact surface 320 in the substrate holder body 32 is constituted by a single surface 326 which forms a gap with the substrate 2 to form a non-contact state with the substrate 2. ing. Then, a part of the single surface 326 also serves as a surface that comes in contact with the mounting surface of the positioning pin 33 and the contact surface 315 of the substrate retainer 31. According to this configuration, the substrate holder main body 32 can be a simple configuration that does not require the formation of the groove 323 and the installation portion of the positioning pin 33 as in the first embodiment, and the cost in manufacturing the substrate holder main body 32. Can be reduced.

<変形例4>
図6(B)は、本発明の実施例1の変形例4に係る基板ホルダ30dの模式的部分断面図(切断部端面図)である。本変形例において実施例1、変形例1〜3と共通する構成については同じ符号を付し、再度の説明は省略する。図6(B)に示すように、変形例4では、変形例3と異なり、基板押え31の基板ホルダ本体32との対向部における凸状部311よりも外側の領域を、実施例1等の溝部313のような溝状の凹凸形状を排した構成としている。具体的には、基板押え31における当接面310よりも外側の領域が、板2
との非接触状態を形成すべく基板2との間に隙間を形成する単一の面316で構成されている。そして、その単一の面316の一部が、基板ホルダ本体32の当接面325と当接する面を兼ねる構成となっている。かかる構成によれば、基板押え31を、実施例1のような溝部313の形成を必要としないシンプルな構成とすることができ、基板押え31の製作におけるコストの低減を図ることができる。
<Modification 4>
FIG. 6 (B) is a schematic partial cross-sectional view (cutting end view) of a substrate holder 30d according to the fourth modification of the first embodiment of the present invention. The same reference numerals as in the first embodiment and the first to third modifications in the present modification denote the same parts, and a description thereof will not be repeated. As shown in FIG. 6B, in the fourth modification, unlike the third modification, the region outside the convex portion 311 in the portion of the substrate holder 31 facing the substrate holder main body 32 A groove-like uneven shape such as the groove portion 313 is eliminated. Specifically, the area outside the contact surface 310 of the substrate retainer 31 is the plate 2
And a single face 316 which forms a gap with the substrate 2 in order to form a non-contact state with it. Then, a part of the single surface 316 doubles as a surface in contact with the contact surface 325 of the substrate holder main body 32. According to this configuration, the substrate presser 31 can be a simple configuration that does not require the formation of the groove portion 313 as in the first embodiment, and the cost in manufacturing the substrate presser 31 can be reduced.

(実施例2)
図7は、本発明の実施例2に係る基板ホルダ30eの基板ホルダ本体32eの模式的平面図である。本実施例において実施例1、変形例1〜4と共通する構成については同じ符号を付し、再度の説明は省略する。実施例2に係る基板ホルダ30eは、2つの基板を収容し保持することができる構成となっている。具体的には、図7に示すように、2つの基板を同じ高さで水平方向に並べて保持することができるように構成されている。なお、図7は、基板ホルダ本体32eと位置決めピン33のみを図示しており、基板及び基板押えについては図示を省略している。
(Example 2)
FIG. 7 is a schematic plan view of a substrate holder main body 32e of a substrate holder 30e according to a second embodiment of the present invention. The same reference numerals as in the first embodiment and the first to fourth modifications in the present embodiment denote the same parts, and a description thereof will not be repeated. The substrate holder 30e according to the second embodiment is configured to be able to accommodate and hold two substrates. Specifically, as shown in FIG. 7, the two substrates can be arranged side by side at the same height and held horizontally. 7 shows only the substrate holder main body 32e and the positioning pin 33, and the substrate and the substrate holder are not shown.

図7に示すように、基板ホルダ本体32eには、2つの基板にそれぞれ対応して2つの凹部322a、322bが設けられており、それぞれの外周に、当接面320、位置決めピン33が配置されている。ここで、本実施例では、隣接する基板の間の領域に入り込んで、2つの基板の一方の位置決めを行う位置決めピン33eが設けられている。位置決めピン33eは、固定部33e1と、延在部33e2と、突出部33e3と、を有する。固定部33e1は、基板ホルダ本体32eにおける基板配置スペースより外側のねじ34の締結によって基板押えと当接する面(あるいは対向する面)に、ねじ35で固定される。延在部33e2は、固定部33e1から2つの基板配置スペースの間を、基板の1辺と所定の位置で対向する位置まで延びている。突出部33e3は、延在部33e2の側方から基板配置スペースに向かって突出し、その先端面330eが、基板の上記1辺と突き当たることで基板を位置決めする。   As shown in FIG. 7, the substrate holder body 32e is provided with two recesses 322a and 322b corresponding to the two substrates, respectively, and the contact surface 320 and the positioning pin 33 are disposed on the outer periphery of each. ing. Here, in the present embodiment, a positioning pin 33e is provided which enters into the area between the adjacent substrates and performs positioning of one of the two substrates. The positioning pin 33e has a fixing portion 33e1, an extending portion 33e2, and a protruding portion 33e3. The fixing portion 33e1 is fixed by a screw 35 to a surface (or a surface opposed to the substrate holding member) that is in contact with the substrate retainer by fastening the screw 34 outside the substrate disposition space in the substrate holder body 32e. The extension portion 33e2 extends from the fixed portion 33e1 to a position facing the one side of the substrate at a predetermined position between the two substrate disposition spaces. The protruding portion 33e3 protrudes from the side of the extending portion 33e2 toward the substrate disposition space, and the tip end surface 330e abuts against the one side of the substrate to position the substrate.

本実施例の位置決めピン33eによれば、2つの基板を並べて配置するホルダ構成において、2つの基板設置スペースの間にねじ止め箇所(ねじ穴324)を形成するために設けられた間隔スペースを利用して、突き当て部を形成することができる。したがって、本実施例によれば、2つの基板を必要最低限の間隔で配置しつつ、基板の破損発生を抑制した基板の保持を可能にすることができる。なお、本実施例の位置決めピン33eを用いた位置決め構成は、3つ以上の複数の基板を保持可能な基板ホルダにも適宜適用できる。   According to the positioning pin 33e of this embodiment, in the holder configuration in which two substrates are arranged side by side, the space provided for forming the screwing point (screw hole 324) between the two substrate installation spaces is used To form a butt portion. Therefore, according to the present embodiment, the two substrates can be arranged at the minimum necessary distance, and the substrate can be held while suppressing the occurrence of breakage of the substrates. In addition, the positioning structure using the positioning pin 33e of a present Example is suitably applicable also to the substrate holder which can hold | maintain three or more board | substrates.

<その他>
当接面310、320(凸状部311、321)は、本実施例では、略矩形の環状に連続的に形成しているが、途切れ途切れの断続的に形成してもよい。
また、当接面310、320の幅は、本実施例では、それぞれ同じ幅に形成しているが、異なる幅としてもよい。また、当接面310、320のそれぞれの当接位置を基板2の幅方向に互いにずらしてもよい。
位置決めピン33やねじ34の数や配置は、上記各実施例における数や配置に限定されず、適宜変更することができる。なお、ねじ34によるねじ止め位置は、基板の角から一定の間隔離れている方がピッチング発生をより確実に防止することができる。
上記各実施例及び各変形例は、可能な限りそれぞれの構成を互いに組み合わせることができる。
<Others>
The contact surfaces 310 and 320 (convex portions 311 and 321) are continuously formed in a substantially rectangular annular shape in this embodiment, but may be formed intermittently.
Further, the widths of the contact surfaces 310 and 320 are formed to be the same width in the present embodiment, but may be different. Further, the contact positions of the contact surfaces 310 and 320 may be mutually shifted in the width direction of the substrate 2.
The number and arrangement of the positioning pins 33 and the screws 34 are not limited to the number and arrangement in each of the above-described embodiments, and can be changed as appropriate. In addition, when the screwing position by the screw 34 is apart from the corner of the substrate by a constant distance, the occurrence of the pitching can be prevented more surely.
The above-mentioned each embodiment and each modification can combine each composition with each other as much as possible.

2…基板、21…被処理面(第1の面)、22…裏面(第2の面)、23…端面、24…角部、30…基板ホルダ、31…基板押え(第1枠体)、310…当接面(第1当接部)、32…基板ホルダ本体(第2枠体)、320…当接面(第2当接部)、33…位置決
めピン、330…先端面(突き当て部)、34…ねじ(締結手段)
DESCRIPTION OF SYMBOLS 2 ... Board | substrate, 21 ... Processed surface (1st surface), 22 ... Back surface (2nd surface), 23 ... End surface, 24 ... Corner part, 30 ... Substrate holder, 31 ... Substrate pressing (1st frame) 310: contact surface (first contact portion) 32: substrate holder main body (second frame) 320: contact surface (second contact portion) 33: positioning pin 330: tip surface (push Apply part), 34 ... screw (fastening means)

Claims (16)

基板の被処理領域を露出させて基板を保持する基板ホルダであって、
基板の角部には非接触で、基板の両面を挟持する挟持部と、
基板の角部には非接触で、基板の端面に突き当たる突き当て部と、
を備えることを特徴とする基板ホルダ。
A substrate holder for holding a substrate by exposing a processing region of the substrate, the substrate holder comprising:
A sandwiching portion that sandwiches both sides of the substrate without contacting the corner of the substrate;
A non-contacting portion at a corner of the substrate, and an abutting portion which abuts on an end surface of the substrate;
A substrate holder comprising:
前記挟持部は、
基板の前記被処理領域を含む第1の面の前記被処理領域の外側の周縁領域における、基板端部よりも内側の位置で前記第1の面に当接する第1当接部と、
基板の前記第1の面とは反対側の第2の面における、基板端部よりも内側の位置で前記第2の面に当接する第2当接部と、
を有し、
前記第1当接部と前記第2当接部とで基板を挟持することを特徴とする請求項1に記載の基板ホルダ。
The holding unit is
A first contact portion that abuts on the first surface at a position inside the end portion of the substrate in a peripheral region outside the processing region of the first surface including the processing region of the substrate;
A second contact portion on the second surface opposite to the first surface of the substrate, the second contact portion being in contact with the second surface at a position inside the end portion of the substrate;
Have
The substrate holder according to claim 1, wherein the substrate is held by the first contact portion and the second contact portion.
前記第1当接部と、前記被処理領域を露出させる開口部と、を有する第1枠体と、
前記第2当接部と、前記突き当て部と、を有する第2枠体と、
前記突き当て部が基板の端面に突き当たり、前記第1当接部及び前記第2当接部が基板を挟持した状態で、前記第1枠体と前記第2枠体とを締結する締結手段と、
を備えることを特徴とする請求項2に記載の基板ホルダ。
A first frame having the first contact portion and an opening for exposing the processing region;
A second frame body having the second abutment portion and the abutment portion;
And a fastening means for fastening the first frame and the second frame in a state where the butting portion abuts on the end face of the substrate and the first contact portion and the second contact portion sandwich the substrate. ,
The substrate holder according to claim 2, comprising:
前記第1枠体は、前記第1当接部の外側に、前記第1枠体と基板の角部との間に隙間を形成するための溝部を有することを特徴とする請求項3に記載の基板ホルダ。   The said 1st frame has the groove part for forming a clearance gap between the said 1st frame and the corner | angular part of a board | substrate in the outer side of the said 1st contact part, It is characterized by the above-mentioned. Substrate holder. 前記第2枠体は、前記第2当接部の外側に、前記第2枠体と基板の角部との間に隙間を形成するための溝部を有することを特徴とする請求項3または4に記載の基板ホルダ。   The second frame is characterized in that it has a groove for forming a gap between the second frame and the corner of the substrate outside the second contact portion. The substrate holder described in. 前記突き当て部は、基板に垂直な方向における幅が基板の厚みよりも小さいことを特徴とする請求項1〜5のいずれか1項に記載の基板ホルダ。   The substrate holder according to any one of claims 1 to 5, wherein a width of the butting portion in a direction perpendicular to the substrate is smaller than a thickness of the substrate. 前記突き当て部は、基板の端面における基板に垂直な方向の中央部に突き当たることを特徴とする請求項1〜6のいずれか1項に記載の基板ホルダ。   The substrate holder according to any one of claims 1 to 6, wherein the abutment portion abuts on a central portion of the end surface of the substrate in a direction perpendicular to the substrate. 前記突き当て部を複数備えることを特徴とする請求項1〜7のいずれか1項に記載の基板ホルダ。   The substrate holder according to any one of claims 1 to 7, wherein a plurality of the abutment portions are provided. 複数の前記突き当て部は、基板の4辺のうち互いに対向する2辺のいずれか一方にのみ突き当たるように配置されることを特徴とする請求項8に記載の基板ホルダ。   9. The substrate holder according to claim 8, wherein the plurality of abutment portions are disposed so as to abut only one of two sides facing each other among the four sides of the substrate. 複数の前記突き当て部は、
基板の4辺のうち互いに対向しない2辺のうちの一方における端面と突き当たる突き当て部と、
前記2辺のうちの他方における端面と突き当たる突き当て部と、
を含むことを特徴とする請求項8または9に記載の基板ホルダ。
The plurality of abutment parts are
An abutting portion which abuts on an end face of one of two sides not facing each other among the four sides of the substrate;
An abutting portion which abuts on an end face of the other of the two sides;
The substrate holder according to claim 8 or 9, further comprising:
複数の前記突き当て部は、基板の4辺のうちの1辺に対しそれぞれ異なる位置で突き当たる複数の突き当て部を含むことを特徴とする請求項8〜10のいずれか1項に記載の基板ホルダ。   The substrate according to any one of claims 8 to 10, wherein the plurality of abutment portions include a plurality of abutment portions which abut on one of four sides of the substrate at different positions. holder. 成膜装置において複数の室の間を移動する基板搬送手段によって、基板の被処理面が水平方向に向くように支持される基板ホルダであり、
複数の前記突き当て部は、基板の下端の辺の端面に突き当たる突き当て部を含むことを特徴とする請求項8〜11のいずれか1項に記載の基板ホルダ。
A substrate holder supported so that a surface to be processed of a substrate faces in a horizontal direction by a substrate transfer unit moving between a plurality of chambers in a film forming apparatus.
The substrate holder according to any one of claims 8 to 11, wherein the plurality of the butting portions include a butting portion which abuts on the end face of the lower end side of the substrate.
複数の基板を保持することが可能であり、
複数の前記突き当て部の少なくとも1つは、隣接する基板の間に配置されることを特徴とする請求項8〜12のいずれか1項に記載の基板ホルダ。
It is possible to hold multiple substrates,
The substrate holder according to any one of claims 8 to 12, wherein at least one of the plurality of abutment portions is disposed between adjacent substrates.
基板に成膜処理を行う成膜装置であって、
成膜室を含む複数の室と、
請求項1〜13のいずれか1項に記載の基板ホルダを支持し、前記複数の室の間を移動する基板搬送手段と、
を備えることを特徴とする成膜装置。
A film forming apparatus for forming a film on a substrate, wherein
A plurality of chambers including a deposition chamber,
A substrate transport unit that supports the substrate holder according to any one of claims 1 to 13 and moves between the plurality of chambers.
A film forming apparatus comprising:
前記基板搬送手段は、基板の被処理面が垂直になるように前記基板ホルダを支持することを特徴とする請求項14に記載の成膜装置。   15. The film forming apparatus according to claim 14, wherein the substrate transport unit supports the substrate holder such that a surface to be processed of the substrate is vertical. 前記基板ホルダは、前記突き当て部を複数備え、
複数の前記突き当て部の少なくとも1つは、基板の下端の辺の端面に突き当たることを特徴とする請求項15に記載の成膜装置。
The substrate holder includes a plurality of the abutting portions.
The film forming apparatus according to claim 15, wherein at least one of the plurality of abutment portions abuts on an end surface of the lower end side of the substrate.
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