JP6673894B2 - Substrate holder and film forming device - Google Patents
Substrate holder and film forming device Download PDFInfo
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- JP6673894B2 JP6673894B2 JP2017250012A JP2017250012A JP6673894B2 JP 6673894 B2 JP6673894 B2 JP 6673894B2 JP 2017250012 A JP2017250012 A JP 2017250012A JP 2017250012 A JP2017250012 A JP 2017250012A JP 6673894 B2 JP6673894 B2 JP 6673894B2
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- 238000012545 processing Methods 0.000 claims description 21
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- 230000008569 process Effects 0.000 claims description 18
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- 238000012546 transfer Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 description 25
- 230000004048 modification Effects 0.000 description 22
- 238000012986 modification Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Description
本発明は、基板ホルダ及び成膜装置に関する。 The present invention relates to a substrate holder and a film forming apparatus.
半導体デバイスに用いられる基板の成膜処理において、基板を垂直に立てた状態（被処理面が垂直となる姿勢）で支持し、成膜装置における各室間を搬送する方式がある。基板は、被処理面が外部に開放（露出）された状態で基板ホルダに保持され、さらに基板ホルダを支持する搬送手段により各室間を移動する（特許文献１）。基板ホルダの構成としては、上下２つの枠体で基板を挟み込み、ねじ等の締結具で枠体を締結することにより、基板を固定保持する構成が一例として挙げられる。 2. Description of the Related Art In a film formation process of a substrate used for a semiconductor device, there is a method in which a substrate is supported in an upright state (a posture in which a surface to be processed is vertical) and transferred between chambers in a film formation apparatus. The substrate is held by the substrate holder in a state where the surface to be processed is opened (exposed) to the outside, and is further moved between the chambers by a transfer means supporting the substrate holder (Patent Document 1). As an example of the configuration of the substrate holder, a configuration in which the substrate is fixedly held by sandwiching the substrate between two upper and lower frames and fastening the frames with fasteners such as screws.
図８は、従来例に係る基板ホルダの構成を示す模式的断面図（切断部端面図）である。図８に示すように、基板ホルダ１３０は、基板２の被処理領域を露出させる開口部を有し、基板２の被処理領域を含む第１面２１と当接する第１枠体１３１と、基板２の第２面２２と当接する第２枠体１３２と、からなり、ねじ３４で締結されている。図８のＣ部に示すように、基板２の角部２４（第１面２１と基板側端面２３との境目の部分、及び第２面２２と基板側端面２３との境目の部分）が、第１枠体１３１と第２枠体１３２に接触する構成となっている。そのため、締付けによる力や加熱時の熱膨張による変形等により、角部２４においてチッピング（角が欠けてチップ（破片）が生じる）が発生してしまう。基板２の角部２４は、基板製造時にバリが発生する部分であり、バリが欠けてチップを生じさせることで装置内が汚染される。また、チッピングは、当初は小さいものであっても、そこをとっかかりとして後の工程において破損範囲が広がりやすく、一度発生してしまうと、生産性に大きな影響を与える。対策の従来例として、基板の面取りがあるが、基板のコストが上がるという課題がある。 FIG. 8 is a schematic sectional view (cut section end view) showing the configuration of a substrate holder according to a conventional example. As shown in FIG. 8, the substrate holder 130 has an opening that exposes the processing area of the substrate 2, and the first frame 131 that contacts the first surface 21 including the processing area of the substrate 2, And a second frame 132 that is in contact with the second second surface 22 and is fastened with screws 34. As shown in part C of FIG. 8, the corners 24 of the substrate 2 (the boundary between the first surface 21 and the substrate-side end surface 23 and the boundary between the second surface 22 and the substrate-side end surface 23) The first frame 131 and the second frame 132 are in contact with each other. For this reason, chipping (a chip is generated due to lack of a corner) occurs at the corner portion 24 due to a force due to the tightening, a deformation due to a thermal expansion at the time of heating, or the like. The corner portion 24 of the substrate 2 is a portion where burrs are generated at the time of manufacturing the substrate, and the inside of the device is contaminated by chipping due to lack of the burrs. Further, even if chipping is small at the beginning, the damage is likely to be widened in a later step by using the chipping as a starting point, and once it occurs, it greatly affects productivity. As a conventional countermeasure, there is chamfering of a substrate, but there is a problem that the cost of the substrate increases.
本発明は、基板の破損発生を抑制した基板の保持を可能とすることができる基板ホルダを提供することを目的とする。 An object of the present invention is to provide a substrate holder capable of holding a substrate while suppressing occurrence of breakage of the substrate.
上記目的を達成するため、本発明の基板ホルダは、
基板の被処理領域を露出させて基板を保持する基板ホルダであって、
基板の角部には非接触で、基板の両面を挟持する挟持部と、
基板の角部には非接触で、基板の端面に突き当たる突き当て部と、
を備え、
前記挟持部は、
基板の前記被処理領域を含む第１の面の前記被処理領域の外側の周縁領域における、基板端部よりも内側の位置で前記第１の面に当接する第１当接部と、
基板の前記第１の面とは反対側の第２の面における、基板端部よりも内側の位置で前記第２の面に当接する第２当接部と、
を有し、
前記第１当接部と前記第２当接部とで基板を挟持し、
さらに、
前記第１当接部と、前記被処理領域を露出させる開口部と、を有する第１枠体と、
前記第２当接部と、前記突き当て部と、を有する第２枠体と、
前記突き当て部が基板の端面に突き当たり、前記第１当接部及び前記第２当接部が基板を挟持した状態で、前記第１枠体と前記第２枠体とを締結する締結手段と、
を備えることを特徴とする。
上記目的を達成するため、本発明の成膜装置は、
基板に成膜処理を行う成膜装置であって、
成膜室を含む複数の室と、
上記基板ホルダを支持し、前記複数の室の間を移動する基板搬送手段と、
を備えることを特徴とする。
In order to achieve the above object, the substrate holder of the present invention comprises:
A substrate holder that holds a substrate by exposing an area to be processed of the substrate,
A holding portion for holding both sides of the board in a non-contact manner at a corner of the board,
An abutting portion that abuts on an end surface of the substrate without contacting a corner of the substrate,
Equipped with a,
The holding portion,
A first abutting portion that abuts on the first surface at a position inside a substrate end in a peripheral region of the first surface including the processed region of the substrate outside the processed region;
A second contact portion that contacts the second surface at a position inside the end of the substrate on a second surface of the substrate opposite to the first surface;
Has,
A substrate sandwiched between the first contact portion and the second contact portion,
further,
A first frame having the first contact portion and an opening exposing the processing target region;
A second frame having the second contact portion and the butting portion;
Fastening means for fastening the first frame and the second frame in a state in which the abutting portion abuts against an end surface of the substrate and the first abutting portion and the second abutting portion sandwich the substrate; ,
The equipped and wherein the Rukoto.
In order to achieve the above object, a film forming apparatus of the present invention includes:
A film forming apparatus for performing a film forming process on a substrate,
A plurality of chambers including a film forming chamber;
A substrate transfer unit that supports the substrate holder and moves between the plurality of chambers;
It is characterized by having.
本発明によれば、基板の破損発生を抑制した基板の保持を可能とすることができる。 ADVANTAGE OF THE INVENTION According to this invention, the holding | maintenance of the board | substrate which suppressed generation | occurrence | production of damage of a board | substrate can be enabled.
以下に図面を参照して、この発明を実施するための形態を、実施例に基づいて例示的に詳しく説明する。ただし、この実施の形態に記載されている構成部品の寸法、材質、形状それらの相対配置などは、発明が適用される装置の構成や各種条件により適宜変更されるべきものである。すなわち、この発明の範囲を以下の実施の形態に限定する趣旨のものではない。 Embodiments for carrying out the present invention will be illustratively described in detail below based on embodiments with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment should be appropriately changed depending on the configuration of the apparatus to which the invention is applied and various conditions. That is, the scope of the present invention is not intended to be limited to the following embodiments.
（実施例１）
＜成膜装置の全体構成＞
図１０は、本発明の実施例に係る成膜装置１の全体構成を概略的に示した模式図である。成膜装置１は、成膜処理される基板２が収容されるストッカ室１１と、基板２の加熱処理を行う加熱室１２と、基板２の被処理面に成膜処理を行う成膜室１３と、を備える。成膜室１３には、成膜処理に先立って基板２の被処理面の洗浄等の前処理やエッチング処理を行うための基板処理装置１４と、基板２の被処理面に成膜処理を行う成膜処理部としてのスパッタリング装置１５と、を備える。本実施例の成膜装置１は、基板２を縦に立てた状態（被処理面が垂直となる姿勢）で各室間を搬送する構成となっている（図９参照）。
(Example 1)
<Overall configuration of film forming apparatus>
FIG. 10 is a schematic diagram schematically showing the entire configuration of the film forming apparatus 1 according to the embodiment of the present invention. The film forming apparatus 1 includes a stocker chamber 11 in which a substrate 2 on which a film is to be formed is stored, a heating chamber 12 for performing a heat treatment on the substrate 2, and a film forming chamber 13 for performing a film forming process on a surface of the substrate 2 to be processed. And. In the film forming chamber 13, a substrate processing apparatus 14 for performing a pre-process such as cleaning of the surface to be processed of the substrate 2 or an etching process prior to the film forming process, and performing a film forming process on the surface to be processed of the substrate 2. And a sputtering device 15 as a film forming unit. The film forming apparatus 1 of this embodiment has a configuration in which the substrate 2 is conveyed between the chambers in a state where the substrate 2 is set upright (the surface to be processed is vertical) (see FIG. 9).
図１１は、本実施例における成膜処理のフローチャートの一例である。基板２は、ストッカ室１１から加熱室１２へ（Ｓ１０１）、加熱室１２から成膜室１３の基板処理装置１４へ（Ｓ１０３）、基板処理装置１４からスパッタリング装置１５へ（Ｓ１０５）、順次搬送され、成膜処理が施される。基板２は、加熱室１２でヒータ１２１により加熱処理された後（Ｓ１０２）、先ず、成膜室１３の基板処理装置１４による表面処理を施される（Ｓ１０４）。表面処理が施された基板２は、次に、スパッタリング装置１５による各種異なる材料からなるターゲット１５１、１５２、１５３を用いたスパッタリング処理が施され（Ｓ１０６）、成膜処理が終了する。ここで示す成膜処理のフローはあくまで一例であり、ここで示す工程内容に限定されるものではない。 FIG. 11 is an example of a flowchart of a film forming process in the present embodiment. The substrate 2 is sequentially transferred from the stocker chamber 11 to the heating chamber 12 (S101), from the heating chamber 12 to the substrate processing apparatus 14 in the film forming chamber 13 (S103), and from the substrate processing apparatus 14 to the sputtering apparatus 15 (S105). Then, a film forming process is performed. After the substrate 2 is heated by the heater 121 in the heating chamber 12 (S102), first, the substrate 2 is subjected to a surface treatment by the substrate processing apparatus 14 in the film forming chamber 13 (S104). Next, the substrate 2 that has been subjected to the surface treatment is subjected to a sputtering process using targets 151, 152, and 153 made of various different materials by the sputtering device 15 (S106), and the film forming process is completed. The flow of the film forming process shown here is merely an example, and the present invention is not limited to the process contents shown here.
本実施例に係る成膜装置１は、例えば、前処理を伴う種々の電極形成に適用可能である。具体例としては、例えば、ＦＣ−ＢＧＡ（Ｆｌｉｐ−Ｃｈｉｐ Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ）実装基板向けのメッキシード膜や、ＳＡＷ（Ｓｕｒｆａｃｅ Ａｃｏｕｓｔｉｃ Ｗａｖｅ）デバイス向けのメタル積層膜の成膜が挙げられる。また、ＬＥＤのボンディング部における導電性硬質膜、ＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒｅｄ Ｃｅｒａｍｉｃ Ｃａｐａｃｉｔｏｒ）の端子部膜の成膜なども挙げられる。その他、電子部品パッケージにおける電磁シールド膜やチップ抵抗器の端子部膜の成膜にも適用可能である。処理基板２のサイズは、縦横２００ｍｍ×２００ｍｍ、厚み０．７〜６．０ｍｍのものが例
示できる。基板２の材質としては、ガラス、アルミナ、セラミック、ＬＴＣＣ(Ｌｏｗ
Ｔｅｍｐｅｒａｔｕｒｅ Ｃｏ−ｆｉｒｅｄ Ｃｅｒａｍｉｃｓ：低温同時焼成セラミックス)等が挙げられる。
The film forming apparatus 1 according to the present embodiment is applicable to, for example, various electrode formations involving pretreatment. Specific examples include, for example, a plating seed film for an FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device. Also, a conductive hard film in a bonding portion of the LED, a terminal film of MLCC (Multi-Layered Ceramic Capacitor) and the like may be formed. In addition, the present invention is also applicable to the formation of an electromagnetic shield film in an electronic component package or a terminal film of a chip resistor. The size of the processing substrate 2 is, for example, 200 mm × 200 mm in length and width and 0.7 to 6.0 mm in thickness. The material of the substrate 2 is glass, alumina, ceramic, LTCC (Low).
Temperture Co-fired Ceramics: low-temperature co-fired ceramics) and the like.
＜基板搬送構成及びスパッタリング装置＞
基板２は、上述したように、垂直に立てた状態で成膜装置１の各室間を搬送され、スパッタリング室５１（チャンバ）内においても、被処理面２１が垂直となる（被処理面２１が水平方向に向いた）姿勢で設置される。図９に示すように、基板２は、基板ホルダ３０により、被処理面２１が開放（露出）された状態で被処理領域外周の周縁部が挟持され保持される。基板２を保持する基板ホルダ３０は、基板ホルダ支持部４３により支持される。基板ホルダ支持部４３は、基板搬送手段としての車輪４３１を下方に備え、基板ホルダ３０を支持した状態でスパッタリング室５１内をスパッタリング室５１の底面に敷設されたレール４３２に乗って移動可能に構成されている。なお、ここで言う垂直とは、スパッタリング室５１の底面あるいはレール４３２上面（基板搬送面）に対して垂直であることであり、装置構成によっては、重力方向（鉛直方向）と一致しない場合がある。同様に、ここで言う水平方向も、重力方向と直交する方向と一致しない場合がある。すなわち、本実施例では、各室の内壁における基板ホルダ支持部４３の設置面が水平面であることを前提として上下左右の方向を規定した説明としているが、該設置面の方向が変われば、上下左右方向の規定もそれに合わせて変化することは言うまでもない。
<Substrate transport configuration and sputtering device>
As described above, the substrate 2 is conveyed between the respective chambers of the film forming apparatus 1 in a vertical state, and the processing surface 21 becomes vertical (the processing surface 21) even in the sputtering chamber 51 (chamber). Is oriented horizontally). As shown in FIG. 9, the substrate 2 is held by the substrate holder 30 in a state where the processing surface 21 is opened (exposed) so that the peripheral edge of the outer periphery of the processing region is sandwiched. The substrate holder 30 that holds the substrate 2 is supported by the substrate holder support 43. The substrate holder supporting portion 43 is provided with a wheel 431 as a substrate transfer means below, and is configured to be movable on a rail 432 laid on the bottom surface of the sputtering chamber 51 in a state where the substrate holder 30 is supported. Have been. Here, the term “perpendicular” means perpendicular to the bottom surface of the sputtering chamber 51 or the upper surface of the rail 432 (substrate transfer surface), and may not coincide with the direction of gravity (vertical direction) depending on the device configuration. . Similarly, the horizontal direction here may not coincide with the direction orthogonal to the direction of gravity. That is, in the present embodiment, the description has been made in the case where the installation surface of the substrate holder support portion 43 on the inner wall of each chamber is defined as a horizontal plane, and the upper, lower, left, and right directions are defined. Needless to say, the definition in the left-right direction also changes accordingly.
スパッタリング装置１５のスパッタリング室５１は、排気装置５６により、予め所定の高真空圧まで排気された状態となっている。基板ホルダ３０は、スパッタリング室５１内を一定の速度で移動し、その間に、基板２に対してカソードユニット５０による成膜処理が施される。スパッタリング室５１内において、基板２（基板ホルダ３０）とカソードユニット５０は、水平方向に互いに対向するように配置される。スパッタリング室５１は、排気装置５６により、スパッタリングプロセスに好適な真空度（例えば、２×１０Ｐａ〜２×１０−５Ｐａ）に調整されるとともに、ガス供給源５７から、スパッタリングガスが流量制御されて供給される。これにより、スパッタリング室５１の内部にスパッタリング雰囲気が形成される。スパッタリングガスとしては、例えばＡｒ、Ｋｒ、Ｘｅ等の希ガスや成膜用の反応性ガスが用いられる。 The sputtering chamber 51 of the sputtering device 15 has been exhausted to a predetermined high vacuum pressure by an exhaust device 56 in advance. The substrate holder 30 moves within the sputtering chamber 51 at a constant speed, and during that time, a film formation process is performed on the substrate 2 by the cathode unit 50. In the sputtering chamber 51, the substrate 2 (substrate holder 30) and the cathode unit 50 are arranged so as to face each other in the horizontal direction. The sputtering chamber 51 is adjusted to a vacuum degree (for example, 2 × 10 Pa to 2 × 10 −5 Pa) suitable for the sputtering process by the exhaust device 56, and the flow rate of the sputtering gas from the gas supply source 57 is controlled. Supplied. Thus, a sputtering atmosphere is formed inside the sputtering chamber 51. As the sputtering gas, a rare gas such as Ar, Kr, or Xe or a reactive gas for film formation is used.
板状の成膜材料であるターゲット１５１は、基板２の搬送経路、すなわち基板２の被処理面２１に対して平行となるように配置される。ターゲット１５１における基板２と対向する側とは反対側には、カソード電極２５１が密着して設けられている。カソード電極２５１には電源５５が接続されており、スパッタリング室５１は接地されている。電源５５による電圧印加において、カソード電極２５１が陰極となり、スパッタリング室５１の壁部が陽極となる。 The target 151, which is a plate-shaped film-forming material, is disposed so as to be parallel to the transport path of the substrate 2, that is, the processing surface 21 of the substrate 2. A cathode electrode 251 is provided in close contact with the target 151 on the side opposite to the side facing the substrate 2. The power supply 55 is connected to the cathode electrode 251, and the sputtering chamber 51 is grounded. When voltage is applied by the power supply 55, the cathode electrode 251 serves as a cathode, and the wall of the sputtering chamber 51 serves as an anode.
＜スパッタリング＞
上述したスパッタリング雰囲気の形成と、電源５５からカソード電極２５１への電圧印加により、ターゲット１５１の基板２との対向面近傍にプラズマ領域が生成される。プラズマ領域の生成により生成されるスパッタリングガスイオンとターゲット１５１との衝突により、ターゲット粒子がターゲット１５１の基板２との対向面から放出される。ターゲット１５１から放出されたターゲット粒子が基板２に向かって飛翔、堆積することで基板２の被処理面２１に成膜がなされる。ターゲット１５２、１５３についても、ターゲット１５１とは材料が異なるのみで、スパッタリングによる成膜処理メカニズムは同様である。
<Sputtering>
By forming the above-described sputtering atmosphere and applying a voltage from the power supply 55 to the cathode electrode 251, a plasma region is generated near the surface of the target 151 facing the substrate 2. The target particles are emitted from the surface of the target 151 facing the substrate 2 due to the collision between the sputtering gas ions generated by the generation of the plasma region and the target 151. The target particles emitted from the target 151 fly toward and deposit on the substrate 2 to form a film on the surface 21 to be processed of the substrate 2. The targets 152 and 153 also differ only in the material from the targets 151, and have the same film formation processing mechanism by sputtering.
＜基板ホルダ３０の構成（本実施例の特徴）＞
図１〜４を参照して、本実施例の特徴である基板ホルダ３０の構成について説明する。
図１は、本発明の実施例に係る基板ホルダの模式的部分断面図（切断部端面図）である。図２は、本発明の実施例に係る基板ホルダの模式的斜視分解図である。図３は、本発明の実施例に係る基板ホルダの模式的断面図（切断部端面図）であり、基板２の基板ホルダ３０への組み付けの様子を説明する図である。図４は、本発明の実施例に係る基板ホルダの第２枠体の模式的平面図である。
<Configuration of Substrate Holder 30 (Features of the Present Embodiment)>
The configuration of the substrate holder 30 which is a feature of the present embodiment will be described with reference to FIGS.
FIG. 1 is a schematic partial sectional view (cut end view) of a substrate holder according to an embodiment of the present invention. FIG. 2 is a schematic perspective exploded view of the substrate holder according to the embodiment of the present invention. FIG. 3 is a schematic cross-sectional view (cut section end view) of the substrate holder according to the embodiment of the present invention, and is a diagram illustrating how the substrate 2 is assembled to the substrate holder 30. FIG. 4 is a schematic plan view of a second frame of the substrate holder according to the embodiment of the present invention.
基板ホルダ３０は、上述したように、基板２の被処理領域を露出させて基板２を保持するものであり、概略、第１の枠体である基板押え３１と、第２の枠体である基板ホルダ本体３２と、で基板２の両面を挟持することで基板２を保持する。基板２の一方の面（第１の面）である被処理面２１は、上述した成膜処理等が施される被処理領域２１ａと、その外側（外周）を囲む周縁領域２１ｂと、で構成される。 As described above, the substrate holder 30 holds the substrate 2 by exposing the region to be processed of the substrate 2, and generally includes a substrate holder 31 as a first frame and a second frame. The substrate 2 is held by sandwiching both sides of the substrate 2 with the substrate holder main body 32. The processing surface 21 that is one surface (first surface) of the substrate 2 includes a processing region 21a on which the above-described film forming process and the like are performed, and a peripheral region 21b that surrounds the outside (outer periphery) thereof. Is done.
基板押え３１は、基板２の被処理面２１の周縁領域２１ｂにおける、基板端部、すなわち、被処理面２１と基板２の側端面２３との境目の角部２４（基板端部）よりも内側の位置において、被処理面２１に当接する当接面（第１当接部）３１０を有する。角部２４よりもどの程度内側で当接面３１０を被処理面２１の周縁領域２１ｂに当接させるかは、チッピングの発生を抑制することができる範囲で適宜設定される。当接面３１０は、基板押え３１において基板ホルダ本体３２との対向方向に突出する凸状部３１１の先端面である。凸状部３１１は、基板押え３１の基板ホルダ本体３２との対向部において略矩形の環状に形成されている。基板押え３１の基板ホルダ本体３２との対向部における凸状部３１１よりも外側には、基板押え３１を基板２の角部２４に対して非接触にする隙間を形成するための溝部（凹部）３１３が形成されている。また、基板押え３１の基板ホルダ本体３２との対向部における凸状部３１１よりも内側は、基板２の被処理面２１を外部に開放（露出）する開口部３１２が形成されている。基板押え３１は、基板２の被処理領域２１ａの周囲を囲む額縁状の部材である。 The substrate presser 31 is located inside the corner 24 (substrate end) of the substrate edge in the peripheral region 21 b of the surface 21 to be processed of the substrate 2, that is, the boundary between the surface 21 to be processed and the side end surface 23 of the substrate 2. Has a contact surface (first contact portion) 310 that contacts the surface 21 to be processed. The degree to which the contact surface 310 is brought into contact with the peripheral region 21b of the processing target surface 21 from the corner portion 24 is appropriately set within a range in which occurrence of chipping can be suppressed. The contact surface 310 is a front end surface of a convex portion 311 protruding in a direction facing the substrate holder main body 32 in the substrate presser 31. The convex portion 311 is formed in a substantially rectangular ring shape at a portion of the substrate presser 31 facing the substrate holder main body 32. A groove (recess) for forming a gap outside the protruding portion 311 in the portion of the substrate holder 31 facing the substrate holder main body 32, which makes the substrate holder 31 non-contact with the corner 24 of the substrate 2. 313 are formed. An opening 312 that opens (exposes) the processing surface 21 of the substrate 2 to the outside is formed inside the convex portion 311 in the portion of the substrate presser 31 facing the substrate holder main body 32. The substrate presser 31 is a frame-shaped member that surrounds the periphery of the processing area 21 a of the substrate 2.
基板ホルダ本体３２は、基板２の他方の面（第２の面）である、被処理面２１とは反対側の裏面２２における、裏面２２と基板２の側端面２３との境目の角部２４よりも内側の位置において、裏面２２に当接する当接面（第２当接部）３２０を有する。角部２４よりもどの程度内側で当接面３２０を裏面２２に当接させるかは、チッピングの発生を抑制することができる範囲で適宜設定される。当接面３２０は、基板ホルダ本体３２において基板押え３１との対向方向に突出する凸状部３２１の先端面である。凸状部３２１は、基板ホルダ本体３２の基板押え３１との対向部において略矩形の環状に形成されている。基板ホルダ本体３２の基板押え３１との対向部における凸状部３２１よりも外側には、基板ホルダ本体３２を基板２の角部２４に対して非接触にする隙間を形成するための溝部（凹部）３２３が形成されている。また、基板ホルダ本体３２の基板押え３１との対向部における凸状部３２１よりも内側には、基板２の裏面２２に対して隙間を空けて対向する凹部３２２が形成されている。なお、凹部３２２に代えて、基板押え３１の開口部３１２と同様、開口部を設けても良い。すなわち、基板２の裏面２２を外部に開放するホルダ構成としてもよい。 The substrate holder main body 32 includes a corner 24 at the boundary between the back surface 22 and the side end surface 23 of the substrate 2 on the other surface (second surface) of the substrate 2 on the back surface 22 opposite to the processing surface 21. A contact surface (second contact portion) 320 that comes into contact with the back surface 22 is provided at a position further inside than the contact surface 320. The degree to which the contact surface 320 is brought into contact with the back surface 22 inside the corner portion 24 is appropriately set within a range in which the occurrence of chipping can be suppressed. The contact surface 320 is a front end surface of a convex portion 321 protruding in a direction facing the substrate holder 31 in the substrate holder main body 32. The convex portion 321 is formed in a substantially rectangular ring shape at a portion of the substrate holder main body 32 facing the substrate presser 31. A groove (recess) for forming a gap that makes the substrate holder main body 32 non-contact with the corner portion 24 of the substrate 2 outside the convex portion 321 in the portion of the substrate holder main body 32 facing the substrate presser 31. ) 323 are formed. A concave portion 322 facing the back surface 22 of the substrate 2 with a gap is formed inside the convex portion 321 in the portion of the substrate holder body 32 facing the substrate presser 31. Note that an opening may be provided in place of the recess 322, similarly to the opening 312 of the substrate holder 31. That is, a holder configuration that opens the back surface 22 of the substrate 2 to the outside may be used.
基板ホルダ本体３２には、基板２の基板ホルダ本体３２に対する位置決めを行うための突き当て部材である位置決めピン３３が、ねじ３５により基板ホルダ本体３２に固定されている。位置決めピン３３は、基板２の側端面２３に向かって、基板２に垂直な方向における幅が徐々に狭くなる先端形状を有しており、その先端面３３０が突き当て部として基板２の側端面２３に当接する。ここで、基板２に垂直な方向とは、基板２の厚み方向、基板押え３１と基板ホルダ本体３２の対向方向、図２等におけるＺ軸方向等と同義である。位置決めピン３３の先端面３３０の基板２に垂直な方向における幅は、基板２の厚みよりも小さく、角部２４との接触を避ける位置、本実施例では、上記方向における中央部において、側端面２２に当接する。先端面３３０が側端面２２と当接する位置は、チッピング
の発生を抑制することができる位置であれば、上記中央部でなくてもよい。
On the substrate holder main body 32, positioning pins 33, which are abutting members for positioning the substrate 2 with respect to the substrate holder main body 32, are fixed to the substrate holder main body 32 by screws 35. The positioning pin 33 has a tip shape in which the width in the direction perpendicular to the substrate 2 gradually decreases toward the side end surface 23 of the substrate 2, and the tip end surface 330 serves as an abutting portion. Contact 23. Here, the direction perpendicular to the substrate 2 is synonymous with the thickness direction of the substrate 2, the facing direction of the substrate holder 31 and the substrate holder main body 32, the Z-axis direction in FIG. The width of the distal end surface 330 of the positioning pin 33 in the direction perpendicular to the substrate 2 is smaller than the thickness of the substrate 2 and at a position where contact with the corner portion 24 is avoided, in the present embodiment, at the center in the above direction, the side end surface Contact 22. The position where the front end surface 330 contacts the side end surface 22 does not have to be the above-described central portion as long as the position can suppress occurrence of chipping.
基板押え３１と基板ホルダ本体３２は、位置決めピン３３が基板２の端面２３に突き当たり、当接面３１０、３２０が基板２を挟持した状態で、締結手段としてのねじ３４により、互いに締結固定される。基板押え３１と基板ホルダ本体３２は、複数のねじ３４により複数箇所で締め付けられ、本実施例では、ねじ３４の１個当たりのクランプ力を５〜４０ｃＮ／ｍとしている。基板押え３１のねじ孔３１４と基板ホルダ本体３２のねじ穴３２４は、基板２に対して、位置決めピン３３と基板２の突き当て位置よりも外側に設けられている。ねじ３４の締結により、当接面３１０、３２０が、基板２の角部２４には非接触で、基板２の両面を挟持する挟持部を構成することになる。基板押え３１、基板ホルダ本体３２、位置決めピン３３は、本実施例ではＳＵＳを用いて製作しているが、ある程度の硬さを持つ金属であれば他の金属を用いてもよい。また、所望の位置決め保持機能が得られるのであれば適宜他の材料を採用してよい。 The substrate presser 31 and the substrate holder main body 32 are fastened and fixed to each other by a screw 34 as a fastening means in a state where the positioning pins 33 abut against the end surface 23 of the substrate 2 and the contact surfaces 310 and 320 sandwich the substrate 2. . The substrate holder 31 and the substrate holder main body 32 are tightened at a plurality of locations by a plurality of screws 34. In this embodiment, the clamping force per screw 34 is 5 to 40 cN / m. The screw holes 314 of the substrate holder 31 and the screw holes 324 of the substrate holder main body 32 are provided on the substrate 2 outside the positions where the positioning pins 33 and the substrate 2 abut. The fastening of the screw 34 causes the contact surfaces 310 and 320 to form a holding portion for holding both surfaces of the substrate 2 without contacting the corners 24 of the substrate 2. The substrate holder 31, the substrate holder main body 32, and the positioning pins 33 are manufactured using SUS in this embodiment, but other metals may be used as long as they have a certain degree of hardness. In addition, other materials may be appropriately used as long as a desired positioning and holding function can be obtained.
基板押え３１の当接面３１０と基板ホルダ本体３２の当接面３２０がそれぞれ、基板２の角部２４よりも内側で角部２４とは非接触で、基板２の両面と接触する構成とすることで、角部２４に対して基板２の厚み方向（Ｚ方向）に働く力を緩和することができる。また、位置決めピン３３も、基板２の角部２４よりも内側で角部２４とは非接触で、基板２の端面２３と接触する構成とすることで、角部２４に対して基板２の幅方向（基板２の面２１、２２に平行な方向、ＸＹ方向）に働く力を緩和することができる。このように、基板ホルダ３０が基板２の角部２４に接触する部分を有さないことで、面取りを行っていない基板２においてチッピングが発生することを抑制することができる。すなわち、本実施例によれば、基板の破損発生を抑制した基板の保持が可能となる。 The abutment surface 310 of the substrate holder 31 and the abutment surface 320 of the substrate holder main body 32 are configured to be in contact with the corners 24 of the substrate 2 without contact with the corners 24 inside the corners 24 of the substrate 2. Thus, the force acting on the corner portion 24 in the thickness direction (Z direction) of the substrate 2 can be reduced. The positioning pins 33 are also in contact with the end surfaces 23 of the substrate 2 without being in contact with the corners 24 inside the corners 24 of the substrate 2, so that the width of the substrate 2 with respect to the corners 24. The force acting in the direction (the direction parallel to the surfaces 21 and 22 of the substrate 2, the XY directions) can be reduced. As described above, since the substrate holder 30 does not have a portion that comes into contact with the corner portion 24 of the substrate 2, it is possible to suppress occurrence of chipping in the substrate 2 that has not been chamfered. That is, according to the present embodiment, it is possible to hold the substrate while suppressing the occurrence of breakage of the substrate.
＜基板２の基板ホルダ３０への組み付け＞
図３に示すように、基板２の基板ホルダ３０への組み付けにおいては、先ず、基板２を基板ホルダ本体３２における所定の基板収容部に載置する、具体的には、凸状部３２１の当接面３２０上に載せる（図３（Ａ））。その際、基板２の裏面２２を当接面３２０に載せつつ基板２の側端面２３を位置決めピン３３の先端面３３０に突き当てることで、基板２を基板ホルダ本体３２に対して位置決めすることができる（図３（Ｂ））。基板２が位置決めされた基板ホルダ３２に対し、額縁状の基板押え３１を基板２の外周縁（周辺領域２１ｂ）を覆うようにかぶせて、基板２を当接面３１０、３２０で挟んだ状態とする。そして、ねじ３４で締結することにより、基板２と基板押え３１と基板ホルダ本体３２とが一体的に固定される（図３（Ｃ））。
<Assembling of the substrate 2 to the substrate holder 30>
As shown in FIG. 3, in assembling the substrate 2 to the substrate holder 30, first, the substrate 2 is placed in a predetermined substrate accommodating portion of the substrate holder main body 32. It is placed on the contact surface 320 (FIG. 3A). At this time, the substrate 2 can be positioned with respect to the substrate holder main body 32 by abutting the side end surface 23 of the substrate 2 against the distal end surface 330 of the positioning pin 33 while placing the back surface 22 of the substrate 2 on the contact surface 320. (FIG. 3B). A state in which the frame 2 is sandwiched between the contact surfaces 310 and 320 with the frame-shaped substrate presser 31 covered with the substrate holder 32 on which the substrate 2 is positioned so as to cover the outer peripheral edge (peripheral region 21b) of the substrate 2. I do. Then, by fastening with the screws 34, the substrate 2, the substrate holder 31, and the substrate holder main body 32 are integrally fixed (FIG. 3C).
＜位置決めピン３３の配置＞
図４に示すように、位置決めピン３３は複数設けられる。複数備える位置決めピン３３は、基板２の４辺のうち互いに対向する２辺のいずれか一方の辺にのみ突き当たるように配置される。すなわち、上記２辺のいずれか一方の辺にのみ位置決めピン３３が突き当たるようにし、他方の辺には基板２に沿った方向の力が基板ホルダ３０から作用しないように構成する。つまり、複数の位置決めピン３３は、突き当て方向において互いに対向する配置とはならない。基板２における位置決めピン３３と突き当たる部分とは反対側の部分を、基板２に沿った方向に位置規制しない構成とすることで、基板２や基板ホルダ３０における寸法誤差や熱膨張等による寸法変化などを吸収して、基板２を位置決めすることができる。
<Arrangement of positioning pin 33>
As shown in FIG. 4, a plurality of positioning pins 33 are provided. The plurality of positioning pins 33 are arranged so as to abut only one of two opposing sides of the four sides of the substrate 2. That is, the positioning pin 33 is configured to abut only one of the two sides, and the force in the direction along the substrate 2 is not applied from the substrate holder 30 to the other side. That is, the plurality of positioning pins 33 do not face each other in the abutting direction. A portion of the substrate 2 opposite to the portion that abuts the positioning pins 33 is not restricted in the direction along the substrate 2 so that a dimensional error in the substrate 2 or the substrate holder 30 or a dimensional change due to thermal expansion, etc. And the substrate 2 can be positioned.
また、複数の位置決めピン３３は、基板２の４辺のうち互いに対向しない２辺のうちの一方の辺における端面２３に突き当たる位置と、他方の辺における端面２３と突き当たる位置と、にそれぞれ配置される。すなわち、基板２に沿った方向における２方向において位置決めを行うことで、基板２を基板ホルダ３０に対して精度よく位置決めすることがで
きる。また、基板２の４辺のうちの１辺に対してそれぞれ異なる位置で突き当たるように複数の位置決めピン３３を配置することで、より精度の高い位置決めを行うことができる。さらに、位置決めピン３３が突き当たる基板２の辺を、基板２が垂直に立てられた際の基板２の４辺のうちの下端の辺とすることで、基板２搬送時において、基板２の下端面となる端面２３を位置決めピン３３で支える構成となる。これにより、より安定した基板２の保持状態を実現することができる。
In addition, the plurality of positioning pins 33 are arranged at a position where one of the four sides of the substrate 2 that does not face each other abuts on the end face 23 and a position where the other side abuts on the end face 23. You. That is, by performing positioning in two directions along the substrate 2, the substrate 2 can be accurately positioned with respect to the substrate holder 30. Further, by arranging the plurality of positioning pins 33 so as to abut on one of the four sides of the substrate 2 at different positions, more accurate positioning can be performed. Furthermore, by setting the side of the substrate 2 on which the positioning pins 33 abut to the lower end side of the four sides of the substrate 2 when the substrate 2 is set upright, the lower end surface of the substrate 2 during the transfer of the substrate 2 Is supported by the positioning pins 33. Thereby, a more stable holding state of the substrate 2 can be realized.
＜変形例１＞
図５（Ａ）は、本発明の実施例１の変形例１に係る基板ホルダ３０ａの模式的部分断面図（切断部端面図）である。本変形例において実施例１と共通する構成については同じ符号を付し、再度の説明は省略する。図５（Ａ）に示すように、本変形例では、位置決めピン３３が、基板ホルダ本体３２の溝部３２３に配置される構成となっている。また、基板押え３１と基板ホルダ本体３２とが、ねじ３４で締め付けられる部分において互いに当接する構成となっている。さらに、基板ホルダ本体３２において、基板押え３１と当接する当接面３２５と、基板２と当接する当接面３２０とが、（図２等のＺ方向において）互いに同じ高さとなるように構成されている。かかる構成によれば、基板ホルダ本体３２の製作において、溝部３２３を形成する工程によって、当接面３２０、３２５、及び位置決めピン２３の設置部を形成することができ、製造コストの低減を図ることができる。
<Modification 1>
FIG. 5A is a schematic partial cross-sectional view (cut section end view) of a substrate holder 30a according to a first modification of the first embodiment of the present invention. In this modification, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated. As shown in FIG. 5A, in this modification, the positioning pins 33 are arranged in the grooves 323 of the substrate holder main body 32. Further, the substrate holder 31 and the substrate holder main body 32 are configured to abut on each other at a portion to be fastened by the screw 34. Further, in the substrate holder main body 32, the contact surface 325 that contacts the substrate presser 31 and the contact surface 320 that contacts the substrate 2 are configured to have the same height (in the Z direction in FIG. 2 and the like). ing. According to such a configuration, in manufacturing the substrate holder body 32, the contact surfaces 320 and 325 and the installation portion of the positioning pin 23 can be formed by the step of forming the groove portion 323, and the manufacturing cost can be reduced. Can be.
＜変形例２＞
図５（Ｂ）は、本発明の実施例１の変形例２に係る基板ホルダ３０ｂの模式的部分断面図（切断部端面図）である。本変形例において実施例１、変形例１と共通する構成については同じ符号を付し、再度の説明は省略する。図５（Ｂ）に示すように、変形例２では、変形例１と異なり、基板押え３１において、基板ホルダ本体３２と当接する当接面３１５と、基板２と当接する当接面３１０とが、（図２等のＺ方向において）互いに同じ高さとなるように構成されている。かかる構成によれば、基板押え３１の製作において、溝部３１３を形成する工程によって、当接面３１０、３１５も形成することができ、製造コストの低減を図ることができる。
<Modification 2>
FIG. 5B is a schematic partial cross-sectional view (cutaway end view) of a substrate holder 30b according to a second modification of the first embodiment of the present invention. In this modification, the same components as those in the first embodiment and the first modification are denoted by the same reference numerals, and the description thereof will not be repeated. As shown in FIG. 5B, in Modification 2, unlike Modification 1, in the substrate holder 31, the contact surface 315 that contacts the substrate holder main body 32 and the contact surface 310 that contacts the substrate 2. , (In the Z direction in FIG. 2 and the like). According to such a configuration, in the manufacture of the substrate holder 31, the contact surfaces 310 and 315 can also be formed by the step of forming the groove 313, and the manufacturing cost can be reduced.
＜変形例３＞
図６（Ａ）は、本発明の実施例１の変形例３に係る基板ホルダ３０ｃの模式的部分断面図（切断部端面図）である。本変形例において実施例１、変形例１、２と共通する構成については同じ符号を付し、再度の説明は省略する。図６（Ａ）に示すように、変形例３では、基板ホルダ本体３２の基板押え３１との対向部における凸状部３２１よりも外側の領域を、実施例１等の溝部３２３のような溝状の凹凸形状を排した構成としている。具体的には、基板ホルダ本体３２における当接面３２０よりも外側の領域が、基板２との非接触状態を形成すべく基板２との間に隙間を形成する単一の面３２６で構成されている。そして、その単一の面３２６の一部が、位置決めピン３３の設置面及び基板押え３１の当接面３１５と当接する面を兼ねる構成となっている。かかる構成によれば、基板ホルダ本体３２を、実施例１のような溝部３２３や位置決めピン３３の設置部の形成を必要としないシンプルな構成とすることができ、基板ホルダ本体３２の製作におけるコストの低減を図ることができる。
<Modification 3>
FIG. 6A is a schematic partial cross-sectional view (cut section end view) of a substrate holder 30c according to a third modification of the first embodiment of the present invention. In this modification, the same components as those in the first embodiment and the first and second modifications are denoted by the same reference numerals, and the description thereof will not be repeated. As shown in FIG. 6A, in the third modification, a region outside the convex portion 321 in the portion of the substrate holder main body 32 facing the substrate presser 31 is formed by a groove such as the groove 323 of the first embodiment. It has a configuration in which the irregular shape is removed. Specifically, a region outside the contact surface 320 in the substrate holder main body 32 is constituted by a single surface 326 that forms a gap between the substrate 2 and the substrate 2 so as to form a non-contact state with the substrate 2. ing. In addition, a part of the single surface 326 also serves as a surface that is in contact with the installation surface of the positioning pin 33 and the contact surface 315 of the substrate holder 31. According to this configuration, the substrate holder main body 32 can have a simple configuration that does not require the formation of the groove 323 and the installation portion of the positioning pin 33 as in the first embodiment, and the cost of manufacturing the substrate holder main body 32 can be reduced. Can be reduced.
＜変形例４＞
図６（Ｂ）は、本発明の実施例１の変形例４に係る基板ホルダ３０ｄの模式的部分断面図（切断部端面図）である。本変形例において実施例１、変形例１〜３と共通する構成については同じ符号を付し、再度の説明は省略する。図６（Ｂ）に示すように、変形例４では、変形例３と異なり、基板押え３１の基板ホルダ本体３２との対向部における凸状部３１１よりも外側の領域を、実施例１等の溝部３１３のような溝状の凹凸形状を排した構成としている。具体的には、基板押え３１における当接面３１０よりも外側の領域が、板２
との非接触状態を形成すべく基板２との間に隙間を形成する単一の面３１６で構成されている。そして、その単一の面３１６の一部が、基板ホルダ本体３２の当接面３２５と当接する面を兼ねる構成となっている。かかる構成によれば、基板押え３１を、実施例１のような溝部３１３の形成を必要としないシンプルな構成とすることができ、基板押え３１の製作におけるコストの低減を図ることができる。
<Modification 4>
FIG. 6B is a schematic partial cross-sectional view (cutaway end view) of a substrate holder 30d according to Modification 4 of Embodiment 1 of the present invention. In this modification, the same reference numerals are given to the same components as those in the first embodiment and the first to third modifications, and the description thereof will not be repeated. As shown in FIG. 6B, in the fourth modification, unlike the third modification, the region outside the convex portion 311 in the portion of the substrate presser 31 facing the substrate holder main body 32 is changed to the first embodiment and the like. The configuration is such that the groove-like unevenness like the groove 313 is eliminated. Specifically, the region outside the contact surface 310 of the substrate holder 31 is the plate 2
And a single surface 316 that forms a gap with the substrate 2 to form a non-contact state with the substrate 2. A portion of the single surface 316 also serves as a surface that abuts against the abutting surface 325 of the substrate holder main body 32. According to such a configuration, the substrate presser 31 can have a simple configuration that does not require the formation of the groove 313 as in the first embodiment, and the cost of manufacturing the substrate presser 31 can be reduced.
（実施例２）
図７は、本発明の実施例２に係る基板ホルダ３０ｅの基板ホルダ本体３２ｅの模式的平面図である。本実施例において実施例１、変形例１〜４と共通する構成については同じ符号を付し、再度の説明は省略する。実施例２に係る基板ホルダ３０ｅは、２つの基板を収容し保持することができる構成となっている。具体的には、図７に示すように、２つの基板を同じ高さで水平方向に並べて保持することができるように構成されている。なお、図７は、基板ホルダ本体３２ｅと位置決めピン３３のみを図示しており、基板及び基板押えについては図示を省略している。
(Example 2)
FIG. 7 is a schematic plan view of the substrate holder main body 32e of the substrate holder 30e according to the second embodiment of the present invention. In this embodiment, the same reference numerals are given to the same components as those in the first embodiment and the first to fourth modifications, and the description thereof will not be repeated. The substrate holder 30e according to the second embodiment has a configuration capable of housing and holding two substrates. Specifically, as shown in FIG. 7, two substrates are arranged at the same height in a horizontal direction and can be held. FIG. 7 illustrates only the substrate holder main body 32e and the positioning pins 33, and omits the illustration of the substrate and the substrate presser.
図７に示すように、基板ホルダ本体３２ｅには、２つの基板にそれぞれ対応して２つの凹部３２２ａ、３２２ｂが設けられており、それぞれの外周に、当接面３２０、位置決めピン３３が配置されている。ここで、本実施例では、隣接する基板の間の領域に入り込んで、２つの基板の一方の位置決めを行う位置決めピン３３ｅが設けられている。位置決めピン３３ｅは、固定部３３ｅ１と、延在部３３ｅ２と、突出部３３ｅ３と、を有する。固定部３３ｅ１は、基板ホルダ本体３２ｅにおける基板配置スペースより外側のねじ３４の締結によって基板押えと当接する面（あるいは対向する面）に、ねじ３５で固定される。延在部３３ｅ２は、固定部３３ｅ１から２つの基板配置スペースの間を、基板の１辺と所定の位置で対向する位置まで延びている。突出部３３ｅ３は、延在部３３ｅ２の側方から基板配置スペースに向かって突出し、その先端面３３０ｅが、基板の上記１辺と突き当たることで基板を位置決めする。 As shown in FIG. 7, the substrate holder main body 32e is provided with two concave portions 322a and 322b corresponding to the two substrates, respectively, and a contact surface 320 and a positioning pin 33 are arranged on the respective outer circumferences. ing. Here, in the present embodiment, positioning pins 33e are provided to enter one region between adjacent substrates and perform positioning of one of the two substrates. The positioning pin 33e has a fixing portion 33e1, an extending portion 33e2, and a projecting portion 33e3. The fixing portion 33e1 is fixed with a screw 35 to a surface (or a surface facing) that comes into contact with the substrate presser by fastening a screw 34 outside the substrate arrangement space in the substrate holder main body 32e. The extending portion 33e2 extends from the fixed portion 33e1 to a position facing a side of the substrate at a predetermined position between the two substrate arrangement spaces. The protruding portion 33e3 protrudes from the side of the extending portion 33e2 toward the substrate arrangement space, and positions the substrate by its leading end surface 330e abutting on the one side of the substrate.
本実施例の位置決めピン３３ｅによれば、２つの基板を並べて配置するホルダ構成において、２つの基板設置スペースの間にねじ止め箇所（ねじ穴３２４）を形成するために設けられた間隔スペースを利用して、突き当て部を形成することができる。したがって、本実施例によれば、２つの基板を必要最低限の間隔で配置しつつ、基板の破損発生を抑制した基板の保持を可能にすることができる。なお、本実施例の位置決めピン３３ｅを用いた位置決め構成は、３つ以上の複数の基板を保持可能な基板ホルダにも適宜適用できる。 According to the positioning pin 33e of the present embodiment, in the holder configuration in which the two substrates are arranged side by side, the space provided for forming the screwing point (screw hole 324) between the two substrate installation spaces is used. Thus, the butting portion can be formed. Therefore, according to the present embodiment, it is possible to arrange the two substrates at the minimum necessary interval and to hold the substrate while suppressing the occurrence of damage to the substrate. Note that the positioning configuration using the positioning pins 33e of the present embodiment can be appropriately applied to a substrate holder capable of holding three or more substrates.
＜その他＞
当接面３１０、３２０（凸状部３１１、３２１）は、本実施例では、略矩形の環状に連続的に形成しているが、途切れ途切れの断続的に形成してもよい。
また、当接面３１０、３２０の幅は、本実施例では、それぞれ同じ幅に形成しているが、異なる幅としてもよい。また、当接面３１０、３２０のそれぞれの当接位置を基板２の幅方向に互いにずらしてもよい。
位置決めピン３３やねじ３４の数や配置は、上記各実施例における数や配置に限定されず、適宜変更することができる。なお、ねじ３４によるねじ止め位置は、基板の角から一定の間隔離れている方がピッチング発生をより確実に防止することができる。
上記各実施例及び各変形例は、可能な限りそれぞれの構成を互いに組み合わせることができる。
<Others>
In the present embodiment, the contact surfaces 310 and 320 (the convex portions 311 and 321) are formed continuously in a substantially rectangular ring shape, but may be formed intermittently.
In the present embodiment, the widths of the contact surfaces 310 and 320 are the same, but may be different. Further, the contact positions of the contact surfaces 310 and 320 may be shifted from each other in the width direction of the substrate 2.
The numbers and arrangements of the positioning pins 33 and the screws 34 are not limited to the numbers and arrangements in the above embodiments, and can be changed as appropriate. It should be noted that the position where the screw 34 is fixed at a fixed distance from the corner of the substrate can more reliably prevent the occurrence of pitching.
In each of the above embodiments and modified examples, the respective configurations can be combined with each other as much as possible.
２…基板、２１…被処理面（第１の面）、２２…裏面（第２の面）、２３…端面、２４…角部、３０…基板ホルダ、３１…基板押え（第１枠体）、３１０…当接面（第１当接部）、３２…基板ホルダ本体（第２枠体）、３２０…当接面（第２当接部）、３３…位置決
めピン、３３０…先端面（突き当て部）、３４…ねじ（締結手段）
2 substrate, 21 processed surface (first surface), 22 back surface (second surface), 23 end surface, 24 corner portion, 30 substrate holder, 31 substrate holder (first frame) , 310: contact surface (first contact portion), 32: substrate holder body (second frame), 320: contact surface (second contact portion), 33: positioning pin, 330: tip surface (butting) Abutting part), 34 ... screw (fastening means)
Claims (14)
基板の角部には非接触で、基板の両面を挟持する挟持部と、
基板の角部には非接触で、基板の端面に突き当たる突き当て部と、
を備え、
前記挟持部は、
基板の前記被処理領域を含む第１の面の前記被処理領域の外側の周縁領域における、基板端部よりも内側の位置で前記第１の面に当接する第１当接部と、
基板の前記第１の面とは反対側の第２の面における、基板端部よりも内側の位置で前記第２の面に当接する第２当接部と、
を有し、
前記第１当接部と前記第２当接部とで基板を挟持し、
さらに、
前記第１当接部と、前記被処理領域を露出させる開口部と、を有する第１枠体と、
前記第２当接部と、前記突き当て部と、を有する第２枠体と、
前記突き当て部が基板の端面に突き当たり、前記第１当接部及び前記第２当接部が基板を挟持した状態で、前記第１枠体と前記第２枠体とを締結する締結手段と、
を備えることを特徴とする基板ホルダ。 A substrate holder that holds a substrate by exposing an area to be processed of the substrate,
A holding portion for holding both sides of the board in a non-contact manner at a corner of the board,
An abutting portion that abuts on an end surface of the substrate without contacting a corner of the substrate,
Equipped with a,
The holding portion,
A first abutting portion that abuts on the first surface at a position inside a substrate end in a peripheral region of the first surface including the processed region of the substrate outside the processed region;
A second contact portion that contacts the second surface at a position inside the end of the substrate on a second surface of the substrate opposite to the first surface;
Has,
A substrate sandwiched between the first contact portion and the second contact portion,
further,
A first frame having the first contact portion and an opening exposing the processing target region;
A second frame having the second contact portion and the butting portion;
Fastening means for fastening the first frame and the second frame in a state in which the abutting portion abuts against an end surface of the substrate and the first abutting portion and the second abutting portion sandwich the substrate; ,
Substrate holder, wherein Rukoto equipped with.
基板の４辺のうち互いに対向しない２辺のうちの一方における端面と突き当たる突き当て部と、
前記２辺のうちの他方における端面と突き当たる突き当て部と、
を含むことを特徴とする請求項６または７に記載の基板ホルダ。 The plurality of butting portions,
An abutting portion which abuts against an end face of one of two sides of the substrate which does not face each other,
An abutting portion which abuts against an end face on the other of the two sides,
Substrate holder according to claim 6 or 7, characterized in that it comprises a.
複数の前記突き当て部は、基板の下端の辺の端面に突き当たる突き当て部を含むことを特徴とする請求項６〜９のいずれか１項に記載の基板ホルダ。 A substrate holder that is supported by a substrate transfer unit that moves between a plurality of chambers in the film forming apparatus so that a surface to be processed of the substrate faces in a horizontal direction,
The substrate holder according to any one of claims 6 to 9 , wherein the plurality of abutting portions include abutting portions that abut against an end surface of a lower side of the substrate.
複数の前記突き当て部の少なくとも１つは、隣接する基板の間に配置されることを特徴とする請求項６〜１０のいずれか１項に記載の基板ホルダ。 It is possible to hold multiple substrates,
The substrate holder according to any one of claims 6 to 10 , wherein at least one of the plurality of abutting portions is arranged between adjacent substrates.
成膜室を含む複数の室と、
請求項１〜１１のいずれか１項に記載の基板ホルダを支持し、前記複数の室の間を移動する基板搬送手段と、
を備えることを特徴とする成膜装置。 A film forming apparatus for performing a film forming process on a substrate,
A plurality of chambers including a film forming chamber;
A substrate transfer unit that supports the substrate holder according to any one of claims 1 to 11 , and moves between the plurality of chambers,
A film forming apparatus comprising:
複数の前記突き当て部の少なくとも１つは、基板の下端の辺の端面に突き当たることを特徴とする請求項１３に記載の成膜装置。 The substrate holder includes a plurality of the abutting portions,
14. The film forming apparatus according to claim 13 , wherein at least one of the plurality of abutting portions abuts on an end surface of a lower side of the substrate.
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| JP2017250012A JP6673894B2 (en) | 2017-12-26 | 2017-12-26 | Substrate holder and film forming device |
| KR1020180124993A KR102365614B1 (en) | 2017-12-26 | 2018-10-19 | Substrate holder, film forming apparatus and substrate processing apparatus |
| CN202211706317.8A CN115874157A (en) | 2017-12-26 | 2018-11-16 | Substrate holder, substrate processing apparatus, and film forming apparatus |
| CN201811362770.5A CN109957765B (en) | 2017-12-26 | 2018-11-16 | Substrate holder and film forming apparatus |
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| JP2004221134A (en) * | 2003-01-09 | 2004-08-05 | Renesas Technology Corp | Apparatus and method of manufacturing semiconductor device |
| JP2005077845A (en) * | 2003-09-01 | 2005-03-24 | Hoya Corp | Sputtering system, method for manufacturing substrate with thin film, method for manufacturing mask blank, and method for manufacturing the transfer mask |
| JP2005252042A (en) * | 2004-03-05 | 2005-09-15 | Sci Technol Kk | Substrate holding device |
| TWM342613U (en) * | 2008-05-22 | 2008-10-11 | Phoenix Prec Technology Corp | Substrate alignment fixture |
| KR100984171B1 (en) * | 2008-05-23 | 2010-09-28 | 엘아이지에이디피 주식회사 | Substrate clamping apparatus |
| JP2011124348A (en) * | 2009-12-09 | 2011-06-23 | Ulvac Japan Ltd | Substrate holder and substrate carrier |
| JP5546299B2 (en) * | 2010-03-17 | 2014-07-09 | 株式会社アルバック | Clamp device and substrate holder |
| JP5682910B2 (en) * | 2010-10-15 | 2015-03-11 | 株式会社アルバック | Substrate holder and substrate transfer device |
| CN106165056B (en) * | 2014-04-17 | 2018-12-11 | 应用材料公司 | Retaining piece, the carrier with the retaining piece and the method for fixed substrate |
| TWI619826B (en) | 2014-07-31 | 2018-04-01 | 愛發科股份有限公司 | Substrate processing apparatus and substrate processing method |
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