JP2019080023A - 発光装置の製造方法 - Google Patents
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Abstract
Description
<実施形態1>
(発光素子)
(半導体積層体20b)
(透光性基板20a)
(電極28)
(透光性部材30)
透光性部材30には、蛍光体が好適に利用できる。蛍光体は、発光素子からの発光で励起可能なものが使用される。例えば、青色発光素子又は紫外線発光素子で励起可能な蛍光体としては、セリウムで賦活されたイットリウム・アルミニウム・ガーネット系蛍光体(YAG:Ce);セリウムで賦活されたルテチウム・アルミニウム・ガーネット系蛍光体(LAG:Ce);ユウロピウムおよび/又はクロムで賦活された窒素含有アルミノ珪酸カルシウム系蛍光体(CaO−Al2O3−SiO2);ユウロピウムで賦活されたシリケート系蛍光体((Sr,Ba)2SiO4);βサイアロン蛍光体、CASN系蛍光体、SCASN系蛍光体等の窒化物系蛍光体;KSF系蛍光体(K2SiF6:Mn);硫化物系蛍光体、量子ドット蛍光体などが挙げられる。これらの蛍光体と、青色発光素子又は紫外線発光素子と組み合わせることにより、様々な色の発光装置(例えば白色系の発光装置)を製造することができる。また、第一透光性部材には、粘度を調整する等の目的で、各種のフィラー等を含有させてもよい。
(被覆部材)
(実施形態1に係る発光装置の製造方法)
(発光素子20及び金型を準備する工程)
(発光素子20を第一凹部110に配置する工程)
(第一被覆部材41で被覆する工程)
(第一凹部110から発光素子20を取り出す工程)
(発光素子20を第二凹部210に配置する工程)
(第二被覆部材42で被覆する工程)
(第二凹部210から発光素子20を取り出す工程)
(発光素子20の姿勢を回転させる工程)
(透光性部材30の被膜工程)
(実施形態2に係る発光装置の製造方法)
11…下面
12…上面
13…正面
14…背面
15…右側面
16…左側面
20…発光素子;20a…透光性基板;20b…半導体積層体
21…電極形成面
22…基板面
23…第一素子側面(素子発光面)
24…第二素子側面
25…第三素子側面
26…第四素子側面
28…電極
30…透光性部材
40…被覆部材
41…第一被覆部材
42…第二被覆部材
100、100B…第一金型
110、110B…第一凹部
112…第一凹部底面
114…第一凹部第一内側面
116…第一凹部第二内側面
120…第一貫通孔
200、200B…第二金型
210、210B…第二凹部
212、212B…第二凹部底面
214…第二凹部第一内側面
300、300B…第三金型
310、310B…第三凹部
320…第三貫通孔
SSS…二次基板
WP…配線
CS…キャリアシート
Claims (14)
- 電極を備える電極形成面と、
前記電極形成面と反対側にある基板面と、
前記電極形成面及び基板面との間に位置する第一素子側面乃至第四素子側面と、
を備える発光素子と、
第一凹部底面と、前記第一凹部底面と交差する第一凹部第一内側面とを有する第一凹部を備える第一金型と、
第二凹部底面と、前記第二凹部底面と交差する第二凹部第一内側面とを有する第二凹部を備える第二金型と、
を準備する工程と、
前記発光素子の前記第一素子側面と、前記第一金型の前記第一凹部の前記第一凹部第一内側面とが接し、且つ前記発光素子の前記基板面と、前記第一凹部の前記第一凹部底面とを対向させた姿勢で、前記発光素子を前記第一凹部内に配置する工程と、
前記第一凹部内において露出される前記発光素子の前記第二素子側面乃至第四素子側面を、第一被覆部材で被覆する工程と、
前記第一被覆部材が形成された前記発光素子を、前記第一凹部から取り出す工程と、
前記第一凹部から取り出された前記発光素子の前記第一素子側面と、前記第二金型の前記第二凹部の前記第二凹部第一内側面とが接し、且つ前記発光素子の前記基板面と、前記第二凹部の前記第二凹部底面とを離間させた姿勢で、前記発光素子を前記第二凹部内に配置する工程と、
前記第二凹部内において、前記発光素子の前記基板面を、第二被覆部材で被覆する工程と、
前記第二被覆部材が形成された前記発光素子を、前記第二凹部から取り出す工程と、
を含む発光装置の製造方法。 - 請求項1に記載の発光装置の製造方法であって、さらに、
前記発光素子を前記第二凹部から取り出す工程の後に、前記第二被覆部材が形成された前記発光素子の前記第一素子側面を、透光性部材で被覆する工程を含む発光装置の製造方法。 - 請求項2に記載の発光装置の製造方法であって、
前記透光性部材で被覆する工程において、前記透光性部材で、前記発光素子の前記第一素子側面、前記第一被覆部材及び第二被覆部材を連続して被覆させてなる発光装置の製造方法。 - 請求項2又は3に記載の発光装置の製造方法であって、
前記透光性部材で被覆する工程において、前記透光性部材に、波長変換部材を含有させてなる発光装置の製造方法。 - 請求項2〜4のいずれか一項に記載の発光装置の製造方法であって、さらに、
前記発光素子を前記第二凹部から取り出す工程の後で、前記透光性部材で被覆する工程の前に、前記第二凹部から取り出した前記発光素子を、前記第一素子側面が上側を向くように回転させる工程を含む発光装置の製造方法。 - 請求項1〜5のいずれか一項に記載の発光装置の製造方法であって、
前記発光素子を前記第一凹部内に配置する工程において、前記発光素子の前記基板面と前記第二凹部の前記第二凹部底面とが対向するように配置してなる発光装置の製造方法。 - 請求項1〜6のいずれか一項に記載の発光装置の製造方法であって、
前記発光素子を前記第一被覆部材で被覆する工程において、前記第一被覆部材と前記第一凹部の前記第一凹部第一内側面とが接するように配置してなる発光装置の製造方法。 - 請求項1〜7のいずれか一項に記載の発光装置の製造方法であって、
前記第二被覆部材で被覆する工程において、前記第二被覆部材と前記第二凹部の前記第二凹部第一内側面とが接するように配置してなる発光装置の製造方法。 - 請求項1〜8のいずれか一項に記載の発光装置の製造方法であって、
前記第一被覆部材及び前記第二被覆部材が、反射部材を含有している発光装置の製造方法。 - 請求項1〜9のいずれか一項に記載の発光装置の製造方法であって、
前記第一金型が、前記発光素子の前記基板面と対向する前記第一凹部底面に第一貫通孔を開口してなる発光装置の製造方法。 - 請求項1〜10のいずれか一項に記載の発光装置の製造方法であって、さらに、
前記発光素子を前記第一凹部内に配置する工程の後で、第一被覆部材で被覆する工程の前に、前記第一凹部内に前記発光素子を配置した状態で、前記第一凹部を閉塞する第三金型を、前記電極と接するように配置する工程を含む発光装置の製造方法。 - 請求項11に記載の発光装置の製造方法であって、さらに、
前記発光素子を前記第二凹部内に配置する工程の後で、第二被覆部材で被覆する工程の前に、前記第二凹部内に前記発光素子を配置した状態で、前記第二凹部を閉塞する前記第三金型を、前記電極と接するように配置する工程を含む発光装置の製造方法。 - 請求項11又は12に記載の発光装置の製造方法であって、
前記第三金型を、平板状に形成してなる発光装置の製造方法。 - 請求項11又は12に記載の発光装置の製造方法であって、
前記第三金型を、前記第一凹部と対向する領域に第三凹部を形成してなる発光装置の製造方法。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134940A (en) * | 1979-04-06 | 1980-10-21 | Citizen Watch Co Ltd | Resin sealing method for ic |
JPS63211638A (ja) * | 1988-01-08 | 1988-09-02 | Nec Home Electronics Ltd | 樹脂封止型半導体装置の製造方法 |
JPH02295140A (ja) * | 1989-05-09 | 1990-12-06 | Nec Corp | 半導体装置の樹脂封止方法 |
JPH04106963A (ja) * | 1990-08-27 | 1992-04-08 | Miyazaki Oki Electric Co Ltd | 半導体装置及びその製造方法 |
JPH10275818A (ja) * | 1997-02-03 | 1998-10-13 | Toshiba Corp | 樹脂封止型半導体装置の製造方法および樹脂封止型半導体装置 |
JP2003203935A (ja) * | 2002-01-09 | 2003-07-18 | Nec Electronics Corp | 半導体装置の封止方法およびそれに用いる封止装置 |
US20080079182A1 (en) * | 2006-08-17 | 2008-04-03 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
JP2011071221A (ja) * | 2009-09-24 | 2011-04-07 | Stanley Electric Co Ltd | 半導体発光装置の製造方法、半導体発光装置および液晶表示装置 |
JP2013140894A (ja) * | 2012-01-05 | 2013-07-18 | Citizen Electronics Co Ltd | Led装置及びその製造方法 |
JP2015097235A (ja) * | 2013-11-15 | 2015-05-21 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
JP2015103632A (ja) * | 2013-11-22 | 2015-06-04 | 日亜化学工業株式会社 | 発光装置およびその製造方法ならびにこの発光装置を備える照明装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7709853B2 (en) * | 2007-02-12 | 2010-05-04 | Cree, Inc. | Packaged semiconductor light emitting devices having multiple optical elements |
KR100956888B1 (ko) * | 2008-01-24 | 2010-05-11 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
DE102013204291A1 (de) | 2013-03-12 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
EP2854186A1 (en) | 2013-09-26 | 2015-04-01 | Seoul Semiconductor Co., Ltd. | Light source module, fabrication method therefor, and backlight unit including the same |
JP6349904B2 (ja) | 2014-04-18 | 2018-07-04 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
JP6398323B2 (ja) | 2014-05-25 | 2018-10-03 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
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Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134940A (en) * | 1979-04-06 | 1980-10-21 | Citizen Watch Co Ltd | Resin sealing method for ic |
JPS63211638A (ja) * | 1988-01-08 | 1988-09-02 | Nec Home Electronics Ltd | 樹脂封止型半導体装置の製造方法 |
JPH02295140A (ja) * | 1989-05-09 | 1990-12-06 | Nec Corp | 半導体装置の樹脂封止方法 |
JPH04106963A (ja) * | 1990-08-27 | 1992-04-08 | Miyazaki Oki Electric Co Ltd | 半導体装置及びその製造方法 |
JPH10275818A (ja) * | 1997-02-03 | 1998-10-13 | Toshiba Corp | 樹脂封止型半導体装置の製造方法および樹脂封止型半導体装置 |
JP2003203935A (ja) * | 2002-01-09 | 2003-07-18 | Nec Electronics Corp | 半導体装置の封止方法およびそれに用いる封止装置 |
US20080079182A1 (en) * | 2006-08-17 | 2008-04-03 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
KR20090040437A (ko) * | 2006-08-17 | 2009-04-24 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 성형된 봉지재를 갖는 발광 소자의 제조 방법 |
JP2011071221A (ja) * | 2009-09-24 | 2011-04-07 | Stanley Electric Co Ltd | 半導体発光装置の製造方法、半導体発光装置および液晶表示装置 |
JP2013140894A (ja) * | 2012-01-05 | 2013-07-18 | Citizen Electronics Co Ltd | Led装置及びその製造方法 |
JP2015097235A (ja) * | 2013-11-15 | 2015-05-21 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
JP2015103632A (ja) * | 2013-11-22 | 2015-06-04 | 日亜化学工業株式会社 | 発光装置およびその製造方法ならびにこの発光装置を備える照明装置 |
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