JP2019079881A - Substrate processing apparatus, and cleaning method of substrate processing apparatus - Google Patents

Substrate processing apparatus, and cleaning method of substrate processing apparatus Download PDF

Info

Publication number
JP2019079881A
JP2019079881A JP2017204671A JP2017204671A JP2019079881A JP 2019079881 A JP2019079881 A JP 2019079881A JP 2017204671 A JP2017204671 A JP 2017204671A JP 2017204671 A JP2017204671 A JP 2017204671A JP 2019079881 A JP2019079881 A JP 2019079881A
Authority
JP
Japan
Prior art keywords
tank
processing
treatment
liquid
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017204671A
Other languages
Japanese (ja)
Other versions
JP7056852B2 (en
Inventor
真治 杉岡
Shinji Sugioka
真治 杉岡
岸田 拓也
Takuya Kishida
拓也 岸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2017204671A priority Critical patent/JP7056852B2/en
Priority to CN201880068015.8A priority patent/CN111316400A/en
Priority to KR1020207012429A priority patent/KR102382902B1/en
Priority to PCT/JP2018/037802 priority patent/WO2019082661A1/en
Priority to TW107137195A priority patent/TWI690979B/en
Publication of JP2019079881A publication Critical patent/JP2019079881A/en
Application granted granted Critical
Publication of JP7056852B2 publication Critical patent/JP7056852B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D35/00Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
    • B01D35/02Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/048Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

To provide a technique for draining a cleaning liquid after cleaning the inside of a pipe without passing through a processing tank when the inside of the processing tank and a pipe of a substrate processing apparatus that performs substrate processing is cleaned by using the processing liquid.SOLUTION: A substrate processing apparatus according to the present invention includes a processing tank for storing a processing liquid and immersing a substrate, processing liquid supply means for supplying the processing liquid to the processing tank, a drainage pipe serving as a flow path when the processing liquid is drained from the processing tank to the outside of the apparatus, a circulation pipe that includes a filter for filtering the processing liquid, and at least one end of which is in communication with the processing tank, a bypass pipe that connects the circulation pipe and the drainage pipe, and serves as a flow path when the processing liquid filtered by the filter is drained without being returned to the processing tank, a switching valve for switching the flow path of the processing liquid drained from the processing tank, and control means that controls the switching valve.SELECTED DRAWING: Figure 1

Description

本発明は処理液を用いて基板を処理する基板処理装置及び基板処理方法に関し、より具体的には、基板に対して処理液による処理を行った後に、処理槽、配管、フィルタ、ポンプなど、処理液が接触した装置各部を洗浄する技術に関する。なお、本明細書でいう基板には、例えば、半導体ウェハ、液晶ディスプレイ用基板、プラズマディスプレイ用基板、有機EL用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク基板、セラミック基板、太陽光電池用基板などが含まれる。   The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a processing liquid, and more specifically, after processing a substrate with a processing liquid, a processing tank, piping, a filter, a pump, etc. The present invention relates to a technique for cleaning each part of an apparatus in contact with a processing solution. The substrates referred to in the present specification include, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for organic EL, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, photomask substrates, Ceramic substrates, substrates for solar cells, etc. are included.

薬液、純水などの処理液を用いて基板の処理を行うこの種の装置においては、処理液を処理槽に貯留し、処理液循環用の配管と処理槽の間で循環させて、基板の処理を行っている。そして、上記の循環用の配管には、処理液を圧送するポンプ、処理液中に混在するメタルなどのパーティクルを除去するフィルタ、処理液の温度調節用のヒーターなどが配置されている。   In this type of apparatus that processes a substrate using a treatment liquid such as a chemical solution or pure water, the treatment liquid is stored in a treatment tank and circulated between a pipe for treatment liquid circulation and the treatment tank to Processing is in progress. Further, in the above-described circulation pipe, a pump for pressure-feeding the treatment liquid, a filter for removing particles such as metal mixed in the treatment liquid, a heater for temperature control of the treatment liquid, and the like are arranged.

上記のような構成の装置を用いて基板処理を行った場合、処理液を排出した後には、処理槽内や配管内(特にフィルタ、ポンプなど)に、パーティクルやこれを含む処理液が残留してしまう。   When substrate processing is performed using an apparatus having the above-described configuration, after the processing liquid is discharged, particles and processing liquid containing the same remain in the processing tank and in the piping (particularly, filters, pumps, etc.) It will

このため、従来から、基板処理後には、純水を用いて処理槽内、配管内を清掃することが行われている。例えば、特許文献1に記載の基板処理装置は、内槽と外槽からなる処理槽と、内槽と外槽とを連通接続し、処理液を循環させるための循環配管と、前記外槽に純水を供給する純水供給部と、前記内槽に貯留する純水を排出する排液配管と、を備えており、前記純水供給部から純水を外槽に供給させ、前記外槽に貯留する純水を前記循環配管により前記内槽に移送させ、前記内槽に貯留する純水を前記排液配管に排出させ、前記供給、前記移送、前記排出の全てまたはそれらのうちの少なくとも二つを同時かつ連続的に実行することで、前記内槽、前記外槽、前記循環配管に純水を流通させつつ洗浄を行わせ、所定の洗浄時間が経過した後または所定量の純水を供給した後に、前記純水供給部からの純水の供給を停止させる、ことが記載されている。   For this reason, conventionally, after substrate processing, the inside of the processing tank and the inside of the piping are cleaned using pure water. For example, the substrate processing apparatus described in Patent Document 1 includes a processing tank including an inner tank and an outer tank, a circulation pipe for connecting the inner tank and the outer tank in communication, and circulating the processing liquid, and the outer tank. A pure water supply unit for supplying pure water and a drainage pipe for discharging pure water stored in the inner tank are provided, and the pure water is supplied from the pure water supply unit to the outer tank, and the outer tank is provided. Water is transferred to the inner tank by the circulation pipe, and the pure water stored in the inner tank is discharged to the drainage pipe, and at least at least all of the supply, the transfer, and the discharge. By performing two simultaneously and continuously, washing is performed while circulating pure water in the inner tank, the outer tank, and the circulation pipe, and after a predetermined washing time has elapsed or a predetermined amount of pure water It is described that the supply of pure water from the pure water supply unit is stopped after the That.

このような構成によって、純水供給部から供給された純水が、外槽、循環配管、内槽、排液配管から構成される一本道となる経路で流通するので、純水を流通させながら各部を純水で洗浄することができる。   With such a configuration, pure water supplied from the pure water supply unit is circulated along a path that is a single path composed of the outer tank, the circulation pipe, the inner tank, and the drainage pipe. Each part can be washed with pure water.

しかしながら、上記のような構成によると、配管内を流通した純水は一旦処理槽を経由して排液されるため、配管内(特にフィルタ)に残留しているパーティクルが、洗浄のための純水により処理槽内に運ばれてしまう。このため、処理槽内のパーティクルを完全には除去しきれないという課題があった。   However, according to the configuration as described above, the pure water that has circulated in the pipe is once drained through the treatment tank, so that the particles remaining in the pipe (particularly the filter) are pure for cleaning. It is carried into the treatment tank by water. Therefore, there is a problem that particles in the processing tank can not be completely removed.

また、純水を用いて洗浄を行うと、純水が処理槽及び配管内に残留することになる。このように純水が残留した状態であると、これによって、次回、基板処理に用いる薬液が希釈されてしまうため、薬液の濃度管理が厳格に要求される場合には、そもそも純水を用いて処理槽及び配管内を洗浄することは困難であるという事情がある。   In addition, when cleaning is performed using pure water, the pure water remains in the treatment tank and the piping. If the pure water remains in this way, the chemical solution to be used for substrate processing will be diluted next time. If the concentration control of the chemical solution is strictly required, then pure water is used primarily There is a circumstance that it is difficult to clean the inside of the treatment tank and the piping.

このため、純水に換えて清浄な薬液(以下、新液ともいう)を用いて処理槽及び配管内洗浄を行うことが考えられるが、薬液を用いる場合には純水と同様には排液することができない。即ち、使用後の薬液(以下、廃液ともいう)は、廃棄による環境への悪影響を防
止するために所定の処理を行う必要があるが、これを行う設備には基板処理直後の高温の廃液を送ることはできない。このため、基板処理用に加熱された廃液は一旦冷却タンクに回収し、所定温度まで冷却したうえで、後工程に送る必要がある。
For this reason, it is possible to replace the pure water and clean the inside of the treatment tank and the piping using a clean chemical (hereinafter also referred to as a new solution). Can not do it. That is, although it is necessary to perform predetermined processing to prevent adverse effects on the environment due to disposal of the chemical solution after use (hereinafter, also referred to as waste liquid), high-temperature waste liquid immediately after substrate processing is used in equipment for performing this. It can not be sent. For this reason, it is necessary to temporarily collect the waste liquid heated for substrate processing in a cooling tank, cool it to a predetermined temperature, and send it to a post process.

このことから、冷却タンクに空き容量が無ければ、薬液を排液することはできず、特に基板処理直後では、冷却タンクには高温の廃液が多量に収容された状態であるため、処理槽及び配管内の洗浄のために多量の薬液を一度に流通・排液させることは不可能である。   From this, if there is no vacant capacity in the cooling tank, the chemical solution can not be drained, and especially immediately after the substrate processing, the cooling tank holds a large amount of high temperature waste liquid, so the processing tank and It is impossible to distribute and drain a large amount of chemical solution at one time for cleaning in the piping.

特開2016−63204号公報JP, 2016-63204, A

本発明は上記のような問題に鑑み、処理液を用いて基板処理を行う基板処理装置の処理槽及び配管内を洗浄する場合において、前記配管内を洗浄した後の洗浄液を、処理槽を経由させずに排液する技術を提供することを目的とする。   In view of the above problems, when cleaning the inside of a processing tank and a pipe of a substrate processing apparatus that performs substrate processing using a processing liquid, the present invention passes the cleaning liquid after cleaning the inside of the pipe through the processing tank. The object is to provide a technique for draining fluid without letting it flow.

前記の目的を達成するために、本発明は以下の構成を採用する。   In order to achieve the above object, the present invention adopts the following configuration.

本発明に係る基板処理装置は、基板を処理液で処理する基板処理装置であって、前記処理液を貯留し、基板を浸漬させる処理槽と、前記処理液を前記処理槽に供給する処理液供給手段と、前記処理液が前記処理槽から装置外へと排液される際の流路となる排液配管と、前記処理液をろ過するフィルタを備え、少なくとも一端が前記処理槽に連絡する循環配管と、前記循環配管と前記排液配管とを連絡し、前記フィルタでろ過された前記処理液が、前記処理槽に戻らずに排液される際の流路となるバイパス配管と、前記処理槽から排出される前記処理液の流路を切り替える開閉バルブと、前記開閉バルブを制御する制御手段とを有する。   A substrate processing apparatus according to the present invention is a substrate processing apparatus for processing a substrate with a processing liquid, which stores the processing liquid and immerses the substrate, and a processing liquid which supplies the processing liquid to the processing tank. It comprises a supply means, a drainage pipe which becomes a flow path when the processing liquid is drained from the processing tank to the outside of the apparatus, and a filter for filtering the processing liquid, and at least one end communicates with the processing tank A circulation pipe, a bypass pipe, which communicates the circulation pipe and the drainage pipe, and serves as a flow path when the processing solution filtered by the filter is drained without returning to the processing tank, and It has an on-off valve which switches the flow path of the processing solution discharged from the processing tank, and control means for controlling the on-off valve.

上記のような構成によると、開閉バルブを用いて処理液の流路を切り替えることにより、処理槽から排出され循環配管を通った処理液を処理槽に戻すことなくバイパス配管を介して排液することができる。このため、処理液を用いて配管内を洗浄する場合において、フィルタを含む配管内に残留した廃液およびパーティクルを処理槽に戻すことなく、配管内を洗浄することが可能になる。   According to the above configuration, by switching the flow path of the treatment liquid using the on-off valve, the treatment liquid discharged from the treatment tank and passing through the circulation pipe is drained through the bypass pipe without returning to the treatment tank. be able to. Therefore, when the inside of the pipe is cleaned using the processing liquid, it is possible to clean the inside of the pipe without returning waste liquid and particles remaining in the pipe including the filter to the processing tank.

また、前記循環配管は一端が前記処理槽に接続し、他端は排液配管に接続しており、前記開閉バルブには、前記処理槽から排出された前記処理液が前記排液配管のみを通って排液される流路と、前記処理槽から排出された前記処理液が前記排液配管から前記循環配管へと流れる流路と、を切り替えるワンパス排液バルブが含まれており、前記処理槽から排出された前記処理液が前記排液配管から前記循環配管へと流れる場合には、前記循環配管は、前記処理液が前記処理槽との間で循環可能な流路を形成するのであってもよい。このような構成により、処理液を循環させる際に排液配管を循環のための流路の一部として活用することができる。   Further, one end of the circulation pipe is connected to the processing tank, and the other end is connected to a drainage pipe, and the processing liquid discharged from the processing tank is connected to the on-off valve only for the drainage pipe. A one-pass drainage valve is included to switch between a flow passage through which the treatment liquid is drained and a flow passage through which the treatment liquid discharged from the treatment tank flows from the drainage pipe to the circulation pipe, When the treatment liquid discharged from the tank flows from the drainage pipe to the circulation pipe, the circulation pipe forms a flow path through which the treatment liquid can circulate with the treatment tank. May be With such a configuration, when circulating the treatment liquid, the drainage pipe can be utilized as part of a flow path for circulation.

また、前記排液配管は、一端が前記処理槽に接続しており、該配管内の上流に前記処理槽から前記処理液を排出するか否かを切り替える処理槽排液バルブを備え、前記循環配管は、一端が前記処理槽に連絡し他端が前記排液配管の前記処理槽排液バルブよりも下流に接続しており、前記フィルタと前記処理槽との間に位置する処理槽循環バルブを備え、前記バイパス配管は、一端が前記フィルタと前記処理槽循環バルブとの間で前記循環配管と
接続し、他端が前記循環配管が接続している位置よりも下流で前記排液配管と接続しており、前記バイパス配管内の流路を開閉する循環排液バルブを備え、前記制御手段は、前記処理槽排液バルブ、ワンパス排液バルブ、処理槽循環バルブ、循環排液バルブ、の各バルブを開閉制御することによって、前記処理槽から排出された前記処理液が、前記循環配管の一部及び前記バイパス配管を流通して、前記処理槽に戻らずに排液される、循環排液処理を行うようにしてもよい。
Further, the drainage pipe has one end connected to the treatment tank, and is provided with a treatment tank drainage valve for switching whether or not the treatment liquid is drained from the treatment tank upstream in the piping, and the circulation One end of the pipe is in communication with the processing tank, and the other end is connected downstream of the processing tank drainage valve of the drainage pipe, and the processing tank circulation valve is located between the filter and the processing tank. The bypass pipe has one end connected to the circulation pipe between the filter and the processing tank circulation valve, and the other end connected downstream from the position where the circulation pipe is connected. It comprises a circulation drainage valve that connects and opens and closes a flow path in the bypass piping, and the control means includes the treatment tank drainage valve, the one-pass drainage valve, the treatment tank circulation valve, and the circulation drainage valve By opening and closing each valve A circulating drainage process may be performed, in which the processing liquid discharged from the processing tank flows through a part of the circulation pipe and the bypass pipe and is drained without returning to the processing tank. .

上記のような構成であると、配管及びバルブの組み合わせを簡素に構成することができる。また、各々のバルブについて個別に開閉指示をせずとも、制御手段が行う処理によって、処理液を処理槽に戻さずに、配管内の洗浄を行うことができる。なお、本明細書において、上流、下流とは、排液配管の処理槽排液バルブ側を上流として、処理槽から排出された処理液の流れに従って定義される。   The combination of piping and a valve can be simply comprised as it is the above structures. In addition, the processing in the control means can clean the inside of the pipe without returning the processing liquid to the processing tank without individually instructing the valves to open and close. In the present specification, the upstream and the downstream are defined according to the flow of the processing liquid discharged from the processing tank, with the processing tank drain valve side of the drain piping as the upstream.

また、前記処理槽から排出された処理液を回収する廃液回収タンクをさらに有しており、前記排液配管は、一端が前記処理槽に接続し、他端が前記廃液回収タンクに接続しており、前記制御手段は、前記廃液回収タンクの残容量の情報を取得し、前記廃液回収タンクに所定の残容量がある場合には、該所定の残容量以下の処理液を前記処理槽から排出して、前記循環排液処理を行うようにしてもよい。   Further, the waste liquid recovery tank further includes a waste liquid recovery tank for collecting the treatment liquid discharged from the treatment tank, and one end of the drainage pipe is connected to the treatment tank and the other end is connected to the waste liquid recovery tank. The control means acquires information on the remaining capacity of the waste solution recovery tank, and when the waste solution recovery tank has a predetermined remaining capacity, the processing solution having a predetermined remaining capacity or less is discharged from the processing tank Then, the circulation drainage process may be performed.

上記のような構成であると、廃液回収タンクに空きがある場合には薬液を用いて配管内を洗浄することができる。これにより、次回の基板処理の際に処理槽及び配管内に残留した純水によって薬液の濃度が希釈されることなく、配管内を処理することができる。   When the waste liquid recovery tank has an empty space as described above, the inside of the pipe can be cleaned using a chemical solution. Thus, the inside of the pipe can be processed without dilution of the concentration of the chemical solution by the pure water remaining in the processing tank and the pipe in the next substrate processing.

なお、配管内に一度に通液させる液量が少なすぎると、配管内を有効に洗浄することに支障が生じるため、配管内を有効に洗浄するために必要な一回あたりの通液量の下限を定めておくとよい。当該下限の量は、装置の仕様、処理される基板の種類、処理される基板の枚数、使用される処理液の種類、等の条件に応じて、実験的に或いはシミュレーションにより定めてもよい。   In addition, if there is too little liquid volume which makes it flow in the piping at once, it will cause trouble in effective cleaning of the inside of the piping, so the amount of liquid per one time necessary to clean the inside of the piping effectively You should set the lower limit. The lower limit may be determined experimentally or by simulation according to conditions such as the specifications of the apparatus, the type of substrate to be processed, the number of substrates to be processed, and the type of processing solution to be used.

また、前記処理槽は、基板を浸漬させる内槽と、内槽の周囲を囲うように配置される外槽と、を備えており、前記排液配管は、前記内槽と接続する内槽排液配管部、及び、前記外槽と接続する外槽排液配管部を備えており、前記廃液回収タンクの所定の残容量は、前記外槽の容積以上に設定されており、前記制御手段は、前記廃液回収タンクの残容量の情報を取得し、前記廃液回収タンクに所定の残容量がある場合には、前記外槽に貯留されている処理液を全て排出して前記循環排液処理を行うようにしてもよい。   In addition, the processing tank includes an inner tank for immersing the substrate, and an outer tank arranged to surround the inner tank, and the drainage pipe is connected to the inner tank. A liquid piping section and an outer tank drainage piping section connected to the outer tank are provided, and a predetermined remaining capacity of the waste liquid recovery tank is set to be equal to or larger than the volume of the outer tank, and the control means is Acquiring information on the remaining capacity of the waste liquid recovery tank, and when the waste liquid recovery tank has a predetermined remaining capacity, discharging all the processing liquid stored in the outer tank to perform the circulating drainage process You may do so.

このような構成であると、外槽の容積を限度とした量で一回の通液量を管理することができ、多くの処理液を不必要に供給および排液することを抑止できるため、結果的に基板の処理効率を向上させ、処理液の節約も行うことができる。   With such a configuration, it is possible to control the amount of liquid passing at one time with an amount limited to the volume of the outer tank, and it is possible to suppress unnecessary supply and drainage of a large amount of treatment liquid, As a result, the substrate processing efficiency can be improved, and the processing solution can be saved.

また、前記処理液供給手段は、前記内槽に処理液を供給するように配置され、前記処理槽は、前記内槽から溢れた処理液が前記外槽に貯留する構成であって、前記外槽への処理液の供給は、前記内槽を介して行うようにしてもよい。   Further, the treatment liquid supply means is disposed to supply the treatment liquid to the inner tank, and the treatment tank is configured to store the treatment liquid overflowing from the inner tank in the outer tank, The supply of the treatment liquid to the tank may be performed via the inner tank.

このような構成であると、配管内の洗浄を行う際に、内槽および外槽も漏れなく洗浄することができる。さらに、処理槽及び配管内の洗浄が終了した後、内槽が処理液で満たされた状態となるため、次の基板処理を速やかに実行することが可能になる。即ち、配管内洗浄のための処理液の供給が、次の基板処理の準備を兼ねるようにすることができる。   With such a configuration, when the inside of the pipe is cleaned, the inner tank and the outer tank can also be washed without leakage. Furthermore, after cleaning in the processing tank and the piping is completed, the inner tank is filled with the processing liquid, so that the next substrate processing can be performed promptly. That is, the supply of the processing liquid for cleaning in the pipe can be made to serve as the preparation for the next substrate processing.

また、前記廃液回収タンクは、タンク内に回収された処理液を排出する流路及び該流路
を開閉する廃液バルブを備え、前記制御手段は、前記廃液回収タンクに回収された処理液の温度情報を取得し、前記廃液回収タンクに所定の残容量が無い場合において、前記廃液回収タンク内の処理液の温度が所定の温度以下であれば、前記廃液バルブの開閉制御を行うことによって前記廃液回収タンクから前記処理液を排出し、前記廃液回収タンクに所定の残容量を確保したうえで、前記循環排液処理を行うようにしてもよい。
Further, the waste liquid recovery tank is provided with a flow path for discharging the treatment liquid collected in the tank and a waste liquid valve for opening and closing the flow path, and the control means controls the temperature of the treatment liquid collected in the waste liquid recovery tank. When the information is acquired and there is no predetermined remaining capacity in the waste liquid recovery tank, if the temperature of the processing liquid in the waste liquid recovery tank is equal to or lower than the predetermined temperature, the waste liquid is controlled by opening and closing the waste liquid valve. After the processing liquid is discharged from the recovery tank and a predetermined remaining capacity is secured in the waste liquid recovery tank, the circulating drainage process may be performed.

このような構成であると、廃液回収タンクの残容量に関わらず、配管内洗浄を行うために必要な処理を制御手段によって自動的に実行することができるため、オペレータによる操作(指示)を待つ時間をなくし、装置の稼働率を向上させることができる。   With such a configuration, the control means can automatically execute the processing necessary to clean the inside of the pipe regardless of the remaining capacity of the waste liquid recovery tank, so the operation (instruction) by the operator is awaited. It is possible to eliminate time and improve the operation rate of the device.

また、前記制御手段は、前記処理液による基板の処理が実行された回数及び前記循環排液処理が行われた回数の情報を取得し、所定の回数の基板処理が終わるごとに、前記循環排液処理を所定回数だけ繰り返し行うようにしてもよい。   Further, the control means acquires information on the number of times the processing of the substrate with the processing liquid has been performed and the number of times the circulating drainage processing has been performed, and the circulating drainage is performed each time a predetermined number of times of substrate processing is completed. The liquid processing may be repeated a predetermined number of times.

このような構成であると、洗浄に適した任意のタイミングと、適正な残留パーティクルの除去率を達成する回数で、配管内洗浄のための処理を自動的に行うことができる。なお、当該回数は、装置の仕様、処理される基板の種類、処理される基板の枚数、使用される処理液の種類、等の条件に応じて、実験的に或いはシミュレーションにより定めてもよい。   With such a configuration, the processing for cleaning in the pipe can be performed automatically at an arbitrary timing suitable for cleaning and the number of times for achieving an appropriate removal rate of residual particles. The number of times may be determined experimentally or by simulation according to conditions such as the specification of the apparatus, the type of substrate to be processed, the number of substrates to be processed, and the type of processing liquid to be used.

また、本発明に係る基板処理装置の洗浄方法は、処理液を貯留し基板の浸漬処理を行う内槽及び該内槽から溢れた前記処理液を貯留する外槽を備える処理槽と、前記処理槽から前記処理液を排出する排液配管と、該排液配管に接続し、前記内槽と前記排液配管とを連絡する循環配管と、該循環配管及び前記排液配管に接続し、前記循環配管から処理槽を回避する流路を形成するバイパス配管と、を有する基板処理装置の洗浄方法であって、前記浸漬処理に用いた使用済み処理液を前記処理槽から排出する洗浄準備ステップと、前記内槽に清浄な処理液を供給し、さらに前記内槽を介して前記外槽に処理液を供給する処理槽洗浄ステップと、前記清浄な処理液を外槽のみから排出し、前記排液配管、前記循環配管及びバイパス配管を介して排液する配管洗浄ステップと、を有する。   Further, in the cleaning method of a substrate processing apparatus according to the present invention, an inner tank for storing a processing liquid and performing immersion processing of a substrate, and a processing tank including an outer tank for storing the processing liquid overflowing from the inner tank; A drainage pipe for draining the treatment liquid from the tank, a circulation pipe connected to the drainage pipe and connecting the inner tank and the drainage pipe, a circulation pipe and the drainage pipe, and A cleaning method for a substrate processing apparatus, comprising: bypass piping for forming a flow path for avoiding a processing tank from circulation piping; and a cleaning preparation step for discharging a used processing liquid used for the immersion processing from the processing tank Supplying a clean treatment liquid to the inner tank, and supplying a treatment liquid to the outer tank through the inner tank, and discharging the clean treatment liquid from only the outer tank; Liquid drainage, drainage through the circulation piping and bypass piping That has a pipe cleaning step.

このような方法であると、処理槽から排出され、循環配管内を流通した処理液を処理槽に戻すことなく排液することができるため、配管内に残留した廃液およびパーティクルを処理槽に戻すことなく、処理槽内及び配管内を洗浄することが可能になる。   With such a method, it is possible to drain the treatment liquid discharged from the treatment tank and circulated in the circulation pipe without returning it to the treatment tank, so waste liquid and particles remaining in the pipe are returned to the treatment tank It is possible to clean the inside of the processing tank and the inside of the piping without

また、前記配管洗浄ステップにおいて、一度に排液される処理液の量が、前記外槽の容積未満の所定量に定められていてもよい。このような方法であると、外槽の容積を限度とした所定量単位で一回の通液量を管理することができ、多くの処理液を不必要に供給および排液することを抑止できるため、結果的に基板の処理効率を向上させ、処理液の節約も行うことができる。   Furthermore, in the pipe cleaning step, the amount of the processing liquid drained at one time may be set to a predetermined amount less than the volume of the outer tank. With such a method, it is possible to control the amount of liquid passing once in a predetermined amount unit that limits the volume of the outer tank, and it is possible to suppress unnecessary supply and drainage of a large amount of treatment liquid. As a result, the processing efficiency of the substrate can be improved, and the processing solution can be saved.

また、前記基板処理装置は使用済みの処理液を回収する廃液回収タンクをさらに有しており、前記外槽配管洗浄ステップの前工程として、前記廃液回収タンクに前記所定量分の空きがあるかを確認する、タンク残容量確認ステップを有していてもよい。   In addition, the substrate processing apparatus further includes a waste liquid recovery tank for collecting the used processing liquid, and whether the waste liquid recovery tank has an empty space for the predetermined amount as a process prior to the outer tank pipe cleaning step There may be a tank remaining capacity confirmation step to confirm the above.

このような方法であると、廃液回収タンクに空きがある場合には薬液を用いて配管内を洗浄することができる。これにより、次回の基板処理の際に処理槽及び配管内に残留した純水によって薬液の濃度が希釈されることなく、配管内を処理することができる。   With such a method, when there is an empty space in the waste liquid recovery tank, the inside of the pipe can be cleaned using a chemical solution. Thus, the inside of the pipe can be processed without dilution of the concentration of the chemical solution by the pure water remaining in the processing tank and the pipe in the next substrate processing.

また、前記タンク残容量確認ステップにおいて、前記廃液回収タンクに前記所定量分の空きが無かった場合には、前記廃液回収タンク内の処理液の温度が、所定の排液可能温度
以下か否かを確認し、排液可能温度以下であれば、前記廃液回収タンク内の処理液をタンクから排出し、排液可能温度を超えていれば、排液可能温度以下になるまで、待機と確認を繰り返す、タンク残容量確保ステップをさらに有していてもよい。
In the remaining tank capacity confirmation step, if there is no space for the predetermined amount in the waste liquid recovery tank, whether or not the temperature of the processing liquid in the waste liquid recovery tank is equal to or less than a predetermined drainable temperature. If the temperature is below the drainable temperature, the processing liquid in the waste liquid recovery tank is drained from the tank, and if it exceeds the drainable temperature, wait and confirm until the drainable temperature is below the drainable temperature. It may further have the step of securing the remaining tank capacity repeatedly.

このような方法であると、廃液回収タンクの残容量に関わらず、配管内洗浄を行うために必要な処理を自動的に実行することができるため、オペレータによる操作(指示)を待つ時間が不要になり、装置の稼働率を向上させることができる。   With such a method, it is possible to automatically execute the processing necessary to perform cleaning in the pipe regardless of the remaining capacity of the waste liquid recovery tank, so there is no need to wait for an operation (instruction) by the operator Thus, the operating rate of the device can be improved.

本発明によると、処理液を用いて基板処理を行う基板処理装置の処理槽及び配管内を洗浄する場合において、前記配管内を洗浄した後の洗浄液を、処理槽を経由させずに排液する技術を提供することができる。   According to the present invention, in the case of cleaning the inside of a processing tank and a pipe of a substrate processing apparatus that performs substrate processing using a processing liquid, the cleaning liquid after cleaning the inside of the pipe is drained without passing through the processing tank. Technology can be provided.

図1は、実施例に係る基板処理装置の概略構成を示すブロック図である。FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment. 図2は、実施例に係る基板処理装置のバルブの開閉状況と処理液の流れの関係を示す第1の説明図である。FIG. 2 is a first explanatory view showing the relationship between the open / close state of the valve of the substrate processing apparatus and the flow of the processing liquid according to the embodiment. 図3は、実施例に係る基板処理装置のバルブの開閉状況と処理液の流れの関係を示す第2の説明図である。FIG. 3 is a second explanatory view showing the relationship between the open / close state of the valve of the substrate processing apparatus and the flow of the processing liquid according to the embodiment. 図4は、実施例に係る基板処理装置のバルブの開閉状況と処理液の流れの関係を示す第3の説明図である。FIG. 4 is a third explanatory view showing the relationship between the open / close state of the valve of the substrate processing apparatus and the flow of the processing liquid according to the embodiment. 図5は、実施例に係る基板処理装置の洗浄の流れを示すフローチャートである。FIG. 5 is a flowchart showing the flow of cleaning of the substrate processing apparatus according to the embodiment. 図6は、第1の変形例に係る基板処理装置の概略構成を示すブロック図である。FIG. 6 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a first modification. 図7は、第2の変形例に係る基板処理装置の概略構成を示すブロック図である。FIG. 7 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a second modification. 図8は、第3の変形例に係る基板処理装置の概略構成を示すブロック図である。FIG. 8 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a third modification. 図9は、第4の変形例に係る基板処理装置の概略構成を示すブロック図である。FIG. 9 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a fourth modification. 図10は、第5の変形例に係る基板処理装置の概略構成を示すブロック図である。FIG. 10 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a fifth modification.

以下に図面を参照して、この発明を実施するための形態を、実施例に基づいて例示的に説明する。   Hereinafter, with reference to the drawings, modes for carrying out the present invention will be exemplarily described based on examples.

<実施例>
(基板処理装置の構成)
図1は実施例に係る基板処理装置1の概略構成を示すブロック図である。基板処理装置1は、処理槽11に処理液を貯留し、基板を保持するリフター(図示せず)を用いて、基板を該処理槽11に浸漬して処理を行う、いわゆるバッチ式の装置である。
<Example>
(Configuration of substrate processing apparatus)
FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 is a so-called batch-type apparatus that performs processing by immersing a substrate in the processing tank 11 using a lifter (not shown) that stores the processing liquid in the processing tank 11 and holds the substrate. is there.

なお、本明細書においては、「処理液」の語は、薬液と純水とを含む意味で用いられる。薬液としては、混酸(硝酸と燐酸と酢酸の混合液)の他、例えばSPM(硫酸と過酸化水素水の混合液)、オゾン過水(オゾン、過酸化水素水の混合液)、SC1(アンモニア水と過酸化水素水の混合液)、SC2(塩酸と過酸化水素水の混合液)、HF(フッ酸)、H3PO4(燐酸)、FPM(フッ酸と過酸化水の混合液)、FOM(フッ酸とオゾン過水の混合液)などが挙げられる。これらの処理液は、基板上の形成膜の種類、処理工程
などに応じて適宜、選択的に用いられる。
In the present specification, the term "processing liquid" is used in the meaning including a chemical solution and pure water. As the chemical solution, other than mixed acid (mixture of nitric acid, phosphoric acid and acetic acid), for example, SPM (mixture of sulfuric acid and hydrogen peroxide solution), ozone peroxide (mixture of ozone, hydrogen peroxide solution), SC1 (ammonia) Mixed solution of water and hydrogen peroxide), SC2 (mixed solution of hydrochloric acid and hydrogen peroxide), HF (hydrofluoric acid), H3PO4 (phosphoric acid), FPM (mixed solution of hydrofluoric acid and peroxide water), FOM And the like) and the like. These processing solutions are appropriately and selectively used according to the type of the formed film on the substrate, the processing process, and the like.

処理槽11は、処理液としての各種薬液、純水などを貯留するための容器であり、基板の浸漬処理が行われる内槽111と、内槽111の周囲を囲うように配置され、内槽111から溢れた処理液を回収する外槽112とを備えている。内槽111は基板を載置したリフターを収容可能な大きさを有しており、外槽112は内槽111よりも小さな収容量を有する容器である。   The processing tank 11 is a container for storing various chemical solutions as the processing liquid, pure water, etc., and is disposed so as to surround the inner tank 111 where the substrate is subjected to immersion processing and the inner tank 111. And an outer tank 112 for collecting the treatment liquid overflowing from 111. The inner tank 111 has a size capable of containing the lifter on which the substrate is mounted, and the outer tank 112 is a container having a smaller capacity than the inner tank 111.

内槽111の底部には内槽111内の処理液を排出する内槽排液口(図示せず)が配置され、後述する排液配管13の内槽排液配管部13aに接続している。また、内槽111の底部近傍には、長手方向側面内壁のそれぞれに沿って、処理液供給ノズル(図示せず)、及び処理液循環ノズル(図示せず)が配置されている。処理液供給ノズルは、処理液供給管122を介して処理液供給源121と接続しており、処理液供給管122に配置された処理液ノズルの開閉に従って、内槽111へ処理液を供給する。処理液循環ノズルは、後述する循環配管14と接続している。   An inner tank drainage port (not shown) for discharging the treatment liquid in the inner tank 111 is disposed at the bottom of the inner tank 111, and is connected to an inner tank drainage piping portion 13a of the drainage piping 13 described later. . In the vicinity of the bottom of the inner tank 111, a treatment liquid supply nozzle (not shown) and a treatment liquid circulation nozzle (not shown) are disposed along each of the longitudinal inner side walls. The processing liquid supply nozzle is connected to the processing liquid supply source 121 via the processing liquid supply pipe 122, and supplies the processing liquid to the inner tank 111 according to the opening and closing of the processing liquid nozzle disposed in the processing liquid supply pipe 122. . The treatment liquid circulation nozzle is connected to a circulation pipe 14 described later.

外槽112の底部には外槽112内の処理液を排出する外槽排液口(図示せず)が配置され、後述する排液配管13の外槽排液配管部13bに接続している。また、外槽112は液面の高さ(即ち、貯留している処理液の量)を検知するレベルセンサ(例えば、超音波変位計など。図示せず)を備えている。   An outer tank drainage port (not shown) for discharging the treatment liquid in the outer tank 112 is disposed at the bottom of the outer tank 112, and is connected to an outer tank drainage piping portion 13b of the drainage piping 13 described later. . Further, the outer tank 112 is provided with a level sensor (for example, an ultrasonic displacement meter or the like, not shown) that detects the height of the liquid surface (that is, the amount of processing solution stored).

基板処理装置1は、処理槽11と廃液回収タンク17とを接続する排液配管13を有しており、該排液配管13は、内槽111と接続する内槽排液配管部13a及び外槽112と接続する外槽排液配管部13bを備えている。排液配管13の内槽排液配管部13aには内槽排液バルブ131が、外槽排液配管部13bには外槽排液バルブ132がそれぞれ配置されており、これらのバルブの開閉に応じて、内槽111、外槽112からの処理液の排出が制御される。なお、内槽排液バルブ131及び外槽排液バルブ132が本発明の処理槽排液バルブに相当する。また、排液配管13はさらに、ポンプ133と、ポンプ133よりも下流かつ廃液回収タンク17よりも上流に配置されるワンパス排液バルブ134を備えている。   The substrate processing apparatus 1 has a drainage pipe 13 connecting the processing tank 11 and the waste liquid recovery tank 17, and the drainage pipe 13 is connected to the inner tank 111 with an inner tank drainage piping portion 13 a and the outside. An outer tank drainage piping portion 13 b connected to the tank 112 is provided. An inner tank drainage valve 131 is disposed in the inner tank drainage piping section 13a of the drainage piping 13, and an outer tank drainage valve 132 is disposed in the outer tank drainage piping section 13b, respectively. Accordingly, the discharge of the processing liquid from the inner tank 111 and the outer tank 112 is controlled. The inner tank drainage valve 131 and the outer tank drainage valve 132 correspond to the treatment tank drainage valve of the present invention. The drainage pipe 13 further includes a pump 133 and a one-pass drainage valve 134 disposed downstream of the pump 133 and upstream of the waste liquid recovery tank 17.

廃液回収タンク17は、廃液配管171及び廃液バルブ172を備えており、廃液バルブ172が開状態の時には、タンク内の廃液を廃液配管171から廃液処理設備などに排出する。また、廃液回収タンク17は、タンク内の液面の高さを検知するレベルセンサ(図示せず)と、タンク内の廃液の温度を計測する温度センサ(図示せず)を備えている。   The waste liquid recovery tank 17 includes a waste liquid pipe 171 and a waste liquid valve 172. When the waste liquid valve 172 is open, the waste liquid in the tank is discharged from the waste liquid pipe 171 to a waste liquid treatment facility or the like. Further, the waste liquid recovery tank 17 is provided with a level sensor (not shown) that detects the height of the liquid level in the tank, and a temperature sensor (not shown) that measures the temperature of waste liquid in the tank.

また、基板処理装置1は、一端がポンプ133とワンパス排液バルブ134の間に接続され、他端が前記処理液循環ノズルに接続される循環配管14を有している。循環配管14はフィルタ141と、フィルタ141と処理液循環ノズルとの間に位置する処理槽循環バルブ142と、ヒーター143と、を備えている。   The substrate processing apparatus 1 also includes a circulation pipe 14 having one end connected between the pump 133 and the one-pass drainage valve 134 and the other end connected to the processing liquid circulation nozzle. The circulation pipe 14 includes a filter 141, a processing tank circulation valve 142 located between the filter 141 and the processing liquid circulation nozzle, and a heater 143.

また、基板処理装置1は、一端がフィルタ141と処理槽循環バルブ142との間で循環配管14と接続し、他端がワンパス排液バルブ134よりも下流で排液配管13と接続するバイパス配管15を有している。バイパス配管15はその上流近傍に循環排液バルブ151を備えている。   Further, in the substrate processing apparatus 1, one end is connected to the circulation piping 14 between the filter 141 and the processing tank circulation valve 142, and the other end is connected to the drainage piping 13 downstream of the one-pass drainage valve 134. There are fifteen. The bypass pipe 15 is provided with a circulation drain valve 151 near its upstream side.

また、基板処理装置1は、制御部16を有している。制御部16のハードウェアとしての構成は一般的なコンピュータと同様である。即ち、キーボードなどの入力部、モニタなどの出力部、CPU(Central Processing Unit)、ROM(Read only memory)、RA
M(Random access memory)及び、大容量記憶装置などを備える構成となっている。制御
部16は、リフター、処理液供給源121、ポンプ133、ヒーター143、各部のバルブ、各種センサ等と電気的に接続されており、CPUが所定の処理プログラムを実行することによって、装置各部のセンサから情報を取得し、装置各部の動作を制御する。
The substrate processing apparatus 1 also includes a control unit 16. The configuration of the control unit 16 as hardware is the same as that of a general computer. That is, an input unit such as a keyboard, an output unit such as a monitor, a CPU (central processing unit), a ROM (read only memory), an RA
The configuration includes M (Random access memory), a mass storage device, and the like. The control unit 16 is electrically connected to the lifter, the treatment liquid supply source 121, the pump 133, the heater 143, the valves of each part, various sensors, etc., and the CPU executes the predetermined processing program to It acquires information from sensors and controls the operation of each part of the device.

(処理液の流れ)
図2、図3、図4は、それぞれバルブの開閉状況と処理液の流れの関係を示す図である。上述のような装置構成において、処理槽11から排出された処理液は、ワンパス排液バルブ134が開放状態の時には、そのまま廃液回収タンク17に回収される(図2参照)。一方、ワンパス排液バルブ134が閉鎖状態の際には、処理液は循環配管14に流入する。循環配管14に流入した処理液は、フィルタ141によってろ過され、処理槽循環バルブ142が開放、循環排液バルブ151が閉鎖の状態であれば、処理液循環ノズルから内槽111へ供給される(図3参照)。一方、処理槽循環バルブ142が閉鎖、循環排液バルブ151が開放の状態であれば、処理液はバイパス配管15を介して、廃液回収タンク17へと回収される(図4参照)。
(Flow of treatment solution)
FIG.2, FIG.3, FIG.4 is a figure which shows the relationship of the switching condition of a valve | bulb, and the flow of a process liquid, respectively. In the apparatus configuration as described above, the processing liquid discharged from the processing tank 11 is collected as it is in the waste liquid collecting tank 17 when the one-pass drainage valve 134 is in the open state (see FIG. 2). On the other hand, when the one-pass drainage valve 134 is in the closed state, the treatment liquid flows into the circulation pipe 14. The treatment liquid flowing into the circulation pipe 14 is filtered by the filter 141, and is supplied from the treatment liquid circulation nozzle to the inner tank 111 if the treatment tank circulation valve 142 is open and the circulation drainage valve 151 is closed ( See Figure 3). On the other hand, if the treatment tank circulation valve 142 is closed and the circulation drainage valve 151 is open, the treatment liquid is recovered to the waste liquid recovery tank 17 via the bypass pipe 15 (see FIG. 4).

なお、処理液の貯留した内槽111に基板が浸漬され、基板の処理が行われている間は、内槽排液バルブ131が閉鎖状態、外槽排液バルブ132が開放状態、ワンパス排液バルブ134が閉鎖状態、処理槽循環バルブ142が開放状態、循環排液バルブ151が閉鎖状態となっている。そして、外槽112から排出された処理液はポンプ133によって圧送されて、循環配管14に流入し、必要に応じてヒーター143によって加熱され、フィルタ141によってろ過(パーティクル除去)されたうえで、処理液循環ノズルから内槽111へと供給される。これにより、内槽111から処理液が外槽112に溢れ出るため、外槽排液バルブ132が開放状態であっても、外槽112が空になることは無く、新たな処理液が供給されなくとも、循環する処理液によって基板の処理が行われる。   In addition, while the substrate is immersed in the inner tank 111 containing the treatment liquid and the processing of the substrate is being performed, the inner tank drainage valve 131 is closed, the outer tank drainage valve 132 is opened, and the one-pass drainage The valve 134 is closed, the processing tank circulation valve 142 is open, and the circulation drain valve 151 is closed. Then, the processing liquid discharged from the outer tank 112 is pressure-fed by the pump 133, flows into the circulation pipe 14, heated by the heater 143 if necessary, filtered (particle removal) by the filter 141, and then processed. It is supplied to the inner tank 111 from the liquid circulation nozzle. As a result, since the treatment liquid overflows from the inner tank 111 to the outer tank 112, the outer tank 112 never becomes empty even when the outer tank drainage valve 132 is open, and new treatment liquid is supplied. However, processing of the substrate is performed by the circulating processing liquid.

(基板処理装置の洗浄方法)
以下では、図5を参照して、本実施例に係る基板処理装置1の洗浄の流れについて説明する。図5は基板の処理が終了した後から始まる、洗浄の流れを示すフローチャートである。図5に示すように、基板の処理が終了した後、制御部16はまず、ワンパス排液バルブ134、内槽排液バルブ131及び外槽排液バルブ132を開放し、処理槽11内の処理液を全て排液する(ステップS101)。これにより、内槽111、外槽112(及び配管内)は空の状態となり、排出された処理液は、全て廃液回収タンク17に回収される。なお、当該処理が、洗浄準備ステップに該当する。
(Method of cleaning substrate processing apparatus)
Hereinafter, the flow of cleaning of the substrate processing apparatus 1 according to the present embodiment will be described with reference to FIG. FIG. 5 is a flow chart showing the flow of cleaning, which starts after processing of the substrate is completed. As shown in FIG. 5, after processing of the substrate is completed, the control unit 16 first opens the one-pass drainage valve 134, the inner tank drainage valve 131 and the outer tank drainage valve 132 to process the inside of the processing tank 11. Drain all the liquid (step S101). As a result, the inner tank 111 and the outer tank 112 (and the inside of the pipe) become empty, and all the discharged processing liquid is collected in the waste liquid recovery tank 17. The processing corresponds to the cleaning preparation step.

次に、制御部16は内槽排液バルブ131及び外槽排液バルブ132を閉鎖し、処理液バルブ123を開放する。これによって処理液供給源121から新しい(清浄な)処理液が内槽111に供給される。そして、内槽111の容量を超えて供給された処理液は外槽112に溢れ出て、外槽112にも処理液が貯留する。ここで、外槽112に貯留する処理液の量は、外槽112に設けられた液面レベルセンサにより検知され、当該情報が制御部16によって取得される。そして、外槽112に貯留した処理液の量が所定量に達した場合には、制御部16は処理液バルブ123を閉鎖し、処理液の供給を停止する。これによって、内槽111及び外槽112に定量分の処理液が満たされた状態となる(ステップS102)。当該処理が処理槽11洗浄ステップに該当する。なお、外槽を洗浄する観点からは、外槽に貯留する処理液の「所定量」は、外槽の容積に近い値(容積からマージンを差し引いた程度)としておくのが、望ましい。   Next, the control unit 16 closes the inner tank drainage valve 131 and the outer tank drainage valve 132, and opens the treatment liquid valve 123. As a result, fresh (clean) processing liquid is supplied from the processing liquid supply source 121 to the inner tank 111. Then, the processing solution supplied exceeding the capacity of the inner tank 111 overflows into the outer tank 112, and the processing liquid is also stored in the outer tank 112. Here, the amount of the processing liquid stored in the outer tank 112 is detected by a liquid level sensor provided in the outer tank 112, and the information is acquired by the control unit 16. Then, when the amount of the treatment liquid stored in the outer tank 112 reaches a predetermined amount, the control unit 16 closes the treatment liquid valve 123 and stops the supply of the treatment liquid. As a result, the inner tank 111 and the outer tank 112 are filled with a fixed amount of processing liquid (step S102). The said process corresponds to the processing tank 11 washing | cleaning step. From the viewpoint of cleaning the outer tank, it is preferable that the “predetermined amount” of the processing liquid stored in the outer tank be a value close to the volume of the outer tank (about the volume minus the margin).

次に、制御部16は、廃液タンクに設けられた液面レベルセンサの情報に基づいて、廃液回収タンク17に、所定の残容量があるか否かを判断する(ステップS103)。当該処理が、タンク残容量確認ステップに該当する。なお、廃液回収タンク17の「所定の残容量」は、ステップS102でいう外槽の所定量よりも大きい値(例えば、外槽112の
容積分)に設定される。
Next, the control unit 16 determines whether or not the waste liquid recovery tank 17 has a predetermined remaining capacity based on the information of the liquid level sensor provided in the waste liquid tank (step S103). The said process corresponds to a tank remaining capacity confirmation step. The “predetermined remaining capacity” of the waste liquid recovery tank 17 is set to a value (for example, the volume of the outer tank 112) larger than the predetermined amount of the outer tank in step S102.

そして、ステップS103において、所定の残容量が無いと判定した場合には、続けて、廃液回収タンク17内の廃液の温度が所定の値(例えば70℃)以下であるか否かを判断する(ステップS104)。ここで、廃液の温度が所定の値以下であると判定した場合には、廃液バルブ172を開放し、タンク内の廃液を排出し(ステップS105)、ステップS103に戻る。一方、ステップS104において、廃液の温度が所定の値を超えていると判定した場合には、所定時間待機した後、再度廃液回収タンク17内の廃液の温度が所定の値以下であるか否かを判断する処理を繰り返す。なお、当該ステップS104及びステップS105の一連の処理が、タンク残容量確保ステップに該当する。   Then, when it is determined in step S103 that there is no predetermined remaining capacity, it is subsequently determined whether the temperature of the waste liquid in the waste liquid recovery tank 17 is less than or equal to a predetermined value (for example, 70 ° C.) Step S104). Here, when it is determined that the temperature of the waste liquid is equal to or less than the predetermined value, the waste liquid valve 172 is opened, the waste liquid in the tank is discharged (step S105), and the process returns to step S103. On the other hand, if it is determined in step S104 that the temperature of the waste liquid exceeds the predetermined value, after waiting for a predetermined time, whether the temperature of the waste liquid in the waste liquid recovery tank 17 is less than the predetermined value again Repeat the process to determine. The series of processes of step S104 and step S105 correspond to the tank remaining capacity securing step.

なお、ステップS105において、廃液回収タンク17内の廃液を排出する場合には、必ずタンクを完全に空にする必要は無く、所定の残容量分が確保できるだけの排出を行うのであってもよい。また、タンクからの排液を実行しながらステップS103に戻るようにしてもよい。   When the waste liquid in the waste liquid recovery tank 17 is discharged in step S105, it is not necessary to completely empty the tank, and discharging may be performed so as to secure a predetermined remaining capacity. Alternatively, the process may return to step S103 while draining the tank.

ステップS103において、所定の残容量があると判定した場合には、外槽排液バルブ132を開放状態、ワンパス排液バルブ134を閉鎖状態、処理槽循環バルブ142を閉鎖状態、循環排液バルブ151を開放状態とし、外槽112に貯留した処理液を全量排液する(ステップS106)。この際、排出された処理液は循環配管14及びバイパス配管15を介して廃液回収タンク17に回収されることによって、配管内を洗浄する(図4参照)。当該処理が、循環排液処理、配管洗浄ステップに該当する。   When it is determined in step S103 that there is a predetermined remaining capacity, the outer tank drainage valve 132 is opened, the one-pass drainage valve 134 is closed, the processing tank circulation valve 142 is closed, and the circulation drainage valve 151. To an open state, and the entire amount of the treatment liquid stored in the outer tank 112 is drained (step S106). At this time, the discharged processing liquid is collected in the waste liquid recovery tank 17 via the circulation pipe 14 and the bypass pipe 15, thereby cleaning the inside of the pipe (see FIG. 4). The said process corresponds to a circulation drainage process and piping cleaning step.

なお、処理液供給源121から新たに供給される処理液は常温(約25℃)であるため、これが廃液回収タンク17に回収されると、タンク内の廃液の冷却が促進されることになる。即ち、新液を用いた循環排液処理を行うほど、廃液を速やかにタンク外へ排出することができるため、タンクに所定の残容量以上の空きがある場合には直ちに循環排液処理が行われるようにしておくと、廃液回収タンク17の残容量の確保を効率よく行うことができる。   In addition, since the processing liquid newly supplied from the processing liquid supply source 121 is at normal temperature (about 25 ° C.), if it is collected in the waste liquid recovery tank 17, cooling of the waste liquid in the tank is promoted. . That is, since the waste liquid can be discharged to the outside of the tank more promptly as the circulation drainage process using the new solution is performed, the circulation drainage process is performed immediately when the tank has a vacant capacity more than a predetermined remaining capacity. If it is set, it is possible to efficiently secure the remaining capacity of the waste liquid recovery tank 17.

次に、制御部16は、ステップS106の循環排液処理が行われた回数が、所定の繰り返し回数(例えば3回)となっているか否かを判断する(ステップS107)。ここで、所定の繰り返し回数に達している判定した場合には、ルーチンを終了し、所定の繰り返し回数に満たないと判定した場合には、ステップS102に戻って処理を繰り返す。なお、当該判定を行うために、制御部16は循環廃液処理を行った回数をカウントし、ROMなどに保持しておく。   Next, the control unit 16 determines whether the number of times the circulation drainage process in step S106 has been performed is a predetermined number of repetitions (for example, three times) (step S107). Here, if it is determined that the predetermined number of repetitions has been reached, the routine ends, and if it is determined that the predetermined number of repetitions is not reached, the process returns to step S102 and the processing is repeated. In addition, in order to perform the said determination, the control part 16 counts the frequency | count which performed the circulation waste liquid process, and hold | maintains to ROM etc. FIG.

以上のような基板処理装置1の構成によって、図4に示すようなルートで処理液を排液することができ、配管内に残留する廃液、パーティクル等を処理槽11に持ち込むこと無く、処理槽11及び配管内を洗浄することができる。このため、処理槽11内の清浄度を高く維持することができ、これによって基板処理の品質を高めることができる。   With the configuration of the substrate processing apparatus 1 as described above, the processing liquid can be drained through the route as shown in FIG. 4, and the waste liquid, particles and the like remaining in the piping are not carried into the processing tank 11. 11 and the inside of the piping can be cleaned. Therefore, the cleanliness in the processing tank 11 can be maintained high, and the quality of substrate processing can be enhanced.

また、上記のように、外槽112の定量分だけの処理液を用いて配管内を洗浄するため、基板処理装置1の洗浄のルーチンが終了した後は、内槽111には清浄な処理液が満たされた状態となっている。このため、次の基板処理を速やかに実施することができ、装置のスループットを向上させることができる。さらに、内槽111及び外槽112分全てを排液して洗浄を行うことに比べて、処理液を節約することができる。   Further, as described above, since the inside of the pipe is cleaned using the processing solution for the fixed amount of the outer tank 112, after the cleaning routine of the substrate processing apparatus 1 is completed, the processing solution which is clean in the inner tank 111 Is satisfied. Therefore, the next substrate processing can be performed promptly, and the throughput of the apparatus can be improved. Furthermore, the processing liquid can be saved as compared with performing cleaning by draining all of the inner tank 111 and the outer tank 112.

また、廃液回収タンク17に外槽112の所定量分の残容量があれば、洗浄処理を行うことができるため、廃液回収タンク17が空になるのを待つ必要が無く、洗浄処理を効率
よく行うことができる。さらに、上述したように、新液を用いて洗浄処理を行うとタンク内の廃液の温度が下がるため、洗浄処理を行うタイミングを早めることで、廃液回収タンク17からの排液のタイミングを早めることもできる。このような相乗効果によりさらに待機時間を削減することができ、装置のスループットの向上に寄与することできる。
Further, if the waste liquid recovery tank 17 has a remaining capacity for a predetermined amount of the outer tank 112, the washing process can be performed, so there is no need to wait for the waste liquid recovery tank 17 to be empty, and the washing process can be performed efficiently. It can be carried out. Furthermore, as described above, when the cleaning process is performed using a new solution, the temperature of the waste liquid in the tank is lowered, so the timing of the cleaning process can be advanced to accelerate the timing of the drainage from the waste liquid recovery tank 17 You can also. Such synergetic effects can further reduce the waiting time and contribute to the improvement of the throughput of the apparatus.

<変形例1>
なお、上記の実施例は例えば以下の各変形例のような変形を行うことも可能である。図6は、第1の変形例に係る基板処理装置1の概略構成を示すブロック図である。図6に示すように、本変形例は、排液配管13がワンパス排液バルブ134よりも下流に薬液排液バルブ135を備える点、該薬液排液バルブ135とワンパス排液バルブ134との間で排液配管13に接続する純水排液配管136を有している点において、上記実施例と異なっている。
<Modification 1>
The above embodiment can be modified as in the following modifications, for example. FIG. 6 is a block diagram showing a schematic configuration of a substrate processing apparatus 1 according to a first modification. As shown in FIG. 6, in this modification, the drainage pipe 13 is provided with a chemical solution drainage valve 135 downstream of the one-pass drainage valve 134, and between the chemical solution drainage valve 135 and the one-pass drainage valve 134. This embodiment is different from the above embodiment in that the pure water drainage pipe 136 connected to the drainage pipe 13 is provided.

純水排液配管136は、純水排液バルブ137を備えており、該純水排液バルブ137が開放状態、薬液排液バルブ135が閉鎖状態の場合、処理液は廃液回収タンク17に回収されることなく、純水排液配管136から装置外へ排液される。   The pure water drainage pipe 136 is provided with a pure water drainage valve 137, and when the pure water drainage valve 137 is open and the chemical solution drainage valve 135 is closed, the treatment liquid is collected in the waste liquid recovery tank 17 The water is drained from the pure water drainage pipe 136 to the outside of the apparatus without being

このような構成であると、廃液回収タンク17を経由する必要のない処理液(例えば純水)を用いる場合には、直接装置外へ処理液を排液することが可能になる。一方、純水排液バルブ137を閉鎖状態、薬液排液バルブ135を開放状態にすると、処理液は廃液回収タンク17に回収されるため、使用する処理液に応じて柔軟な運用を行うことができる。   With such a configuration, when using a treatment liquid (for example, pure water) that does not need to pass through the waste liquid recovery tank 17, it is possible to directly drain the treatment liquid to the outside of the apparatus. On the other hand, when the pure water drainage valve 137 is closed and the chemical solution drainage valve 135 is opened, the treatment liquid is collected in the waste liquid recovery tank 17, so flexible operation can be performed according to the treatment liquid used. it can.

<変形例2>
図7は、第2の変形例に係る基板処理装置1の概略構成を示すブロック図である。図7に示すように、本変形例の基板処理装置1は、実施例と比べて廃液回収タンク17、廃液配管171、及び廃液バルブ172を備えていない点で異なっている。
<Modification 2>
FIG. 7 is a block diagram showing a schematic configuration of a substrate processing apparatus 1 according to a second modification. As shown in FIG. 7, the substrate processing apparatus 1 of the present modification is different from the embodiment in that the waste liquid recovery tank 17, the waste liquid pipe 171, and the waste liquid valve 172 are not provided.

例えばリンス槽など、処理液として、廃液回収タンク17を経由する必要のない液体のみを用いることが決まっているのであれば、このように装置構成を簡略化することで、コスト及び装置の設置スペース削減することができる。なお、この場合には、上記のタンク残容量確認ステップ及びタンク残容量確保ステップは省略される。   For example, if it is decided to use only a liquid that does not need to pass through the waste liquid recovery tank 17 as a treatment liquid, such as a rinse tank, cost and installation space of the apparatus can be reduced by simplifying the apparatus configuration in this way. It can be reduced. In this case, the above-mentioned tank remaining capacity checking step and tank remaining capacity securing step are omitted.

<変形例3>
図8は、第3の変形例に係る基板処理装置1の概略構成を示すブロック図である。本変形例に係る基板処理装置1は、外槽112に処理液供給ノズルが配置され、処理液供給管122は外槽112に位置する処理液供給ノズルに処理液を供給する構成となっている。
<Modification 3>
FIG. 8 is a block diagram showing a schematic configuration of a substrate processing apparatus 1 according to a third modification. In the substrate processing apparatus 1 according to the present modification, the processing liquid supply nozzle is disposed in the outer tank 112, and the processing liquid supply pipe 122 supplies the processing liquid to the processing liquid supply nozzle positioned in the outer tank 112. .

このような構成であると、内槽111を経由せずに外槽112のみに処理液を貯留させて循環排液処理を行うことが可能になる。この場合には、内槽111が満たされるのを待つ必要が無いため、装置の配管内洗浄自体に要する時間は、実施例と比べて短くすることができる。   With such a configuration, it is possible to store the treatment liquid only in the outer tank 112 without passing through the inner tank 111 and perform circulation drainage processing. In this case, since it is not necessary to wait for the inner tank 111 to be filled, the time required for the in-pipe cleaning of the apparatus itself can be shortened as compared with the embodiment.

<変形例4>
図9は、第4の変形例に係る基板処理装置1の概略構成を示すブロック図である。図9に示すように、本変形例では、循環配管14の下流側の一端が処理液供給管122と接続している。即ち、循環配管14の一端は、処理液供給管122(及び処理液供給ノズル)を介して、処理槽11と連絡している構成である。
<Modification 4>
FIG. 9 is a block diagram showing a schematic configuration of a substrate processing apparatus 1 according to a fourth modification. As shown in FIG. 9, in the present modification, the downstream end of the circulation pipe 14 is connected to the treatment liquid supply pipe 122. That is, one end of the circulation pipe 14 is in communication with the processing tank 11 via the processing liquid supply pipe 122 (and the processing liquid supply nozzle).

このような構成であると、処理液を処理槽11に循環させる場合にも処理液供給管12
2の一部と処理液供給ノズルを流用することができる。これによって処理液循環ノズルをなくすことができ、装置構成を簡略化することが可能になる。
With such a configuration, even when the treatment liquid is circulated to the treatment tank 11, the treatment liquid supply pipe 12
Part of 2 and the treatment liquid supply nozzle can be diverted. As a result, the treatment liquid circulation nozzle can be eliminated, and the apparatus configuration can be simplified.

<変形例5>
図10は、第5の変形例に係る基板処理装置1の概略構成を示すブロック図である。図10が示すように、本変形例では、ワンパス排液バルブ134が循環配管14に位置しており、バイパス配管15は薬液排液バルブ135よりも下流で排液配管13と接続している。即ち、本変形例においては、薬液排液バルブ135及び純水排液バルブ137を閉鎖状態にし、ワンパス排液バルブ134を開放状態にすることによって循環排液処理を実施する。そして、循環排液処理によってバイパス配管15へと流入した処理液は、廃液回収タンク17に回収される。
<Modification 5>
FIG. 10 is a block diagram showing a schematic configuration of a substrate processing apparatus 1 according to a fifth modification. As shown in FIG. 10, in the present modification, the one-pass drainage valve 134 is located in the circulation piping 14, and the bypass piping 15 is connected to the drainage piping 13 downstream of the chemical solution drainage valve 135. That is, in this modification, the chemical drainage valve 135 and the pure water drainage valve 137 are closed, and the one-pass drainage valve 134 is opened, whereby the circulation drainage process is performed. Then, the treatment liquid that has flowed into the bypass pipe 15 by the circulation drainage treatment is collected in the waste liquid collection tank 17.

また、本変形例に係る基板処理装置1は、図10に示す様に循環配管14においてフィルタ141の上流と下流を接続する循環迂回配管145、及び該循環迂回配管145の流路を開閉する循環迂回バルブ146を備えている。さらに、本変形例では一端がフィルタ141に接続し、他端が循環配管14が接続する位置よりも下流で排液配管13と接続する、フィルタ排液配管18を有しており、該フィルタ排液配管18はフィルタ排液バルブ181を備えている。   Further, as shown in FIG. 10, the substrate processing apparatus 1 according to the present modification includes a circulation bypass pipe 145 connecting the upstream and the downstream of the filter 141 in the circulation pipe 14 and a circulation that opens and closes the flow path of the circulation bypass pipe 145. A bypass valve 146 is provided. Furthermore, in the present modification, the filter drainage pipe 18 is provided, one end of which is connected to the filter 141 and the other end of which is connected to the drainage pipe 13 downstream of the position where the circulation pipe 14 is connected. The fluid pipe 18 is provided with a filter drainage valve 181.

このような構成により、循環排液バルブ151を閉鎖し、フィルタ排液バルブ181を開放することで、本変形例でも、廃液回収タンク17を経由する必要のない処理液を用いる場合には、直接装置外へ処理液を排液することが可能になる。このように、基板処理装置1の配管及びバルブの配置は、本発明の技術的思想の範囲内において自由に設定することができる。   By closing the circulation drainage valve 151 and opening the filter drainage valve 181 with such a configuration, even in the present modification, when using a treatment liquid that does not need to pass through the waste liquid recovery tank 17, it is possible to directly It is possible to drain the treatment liquid out of the apparatus. As described above, the arrangement of the piping and the valve of the substrate processing apparatus 1 can be freely set within the scope of the technical idea of the present invention.

<その他>
なお、上記の各例は、本発明を例示的に説明するものに過ぎず、本発明は上記の具体的な態様には限定されない。本発明は、その技術的思想の範囲内で種々の応用が可能である。例えば、制御部16が基板の処理回数(枚数)を管理し、所定の処理回数(枚数)ごとに、上記実施例の循環排液処理を実行するようになっていてもよい。このようにすれば、基板処理装置の処理槽及び配管内の清潔性を所定水準以上に維持した状態で、基板処理を継続して実施することができるようになる。
<Others>
The above examples merely illustrate the present invention, and the present invention is not limited to the above specific embodiments. The present invention can be applied in various ways within the scope of the technical idea. For example, the control unit 16 may manage the number of times of substrate processing (the number of sheets), and may execute the circulation drainage process of the above-described embodiment every predetermined number of times of processing (the number of sheets). In this way, substrate processing can be continuously performed while maintaining the cleanliness in the processing tank and the piping of the substrate processing apparatus at a predetermined level or higher.

また、上記の実施例では、廃液回収タンク17における「所定の残容量」を外槽112に貯留する所定量の処理液よりも大きく設定し、外槽112に所定量の処理液が貯留すると一度にこれを全量排出するようにしていたが、必ずしもこのようにする必要は無い。例えば、廃液回収タンク17における「所定の残容量」を小さな値に設定し、外槽112から一度に排出される処理液の量をこれに合わせて少なくしてもよい(即ち、一度の排液では外槽112が空にならないような値であってもよい)。   In the above embodiment, the “predetermined residual capacity” in the waste liquid recovery tank 17 is set larger than the predetermined amount of treatment liquid stored in the outer tank 112, and once the predetermined amount of treatment liquid is stored in the outer tank 112. It was necessary to discharge all of this, but it is not necessary to do so. For example, the "predetermined residual capacity" in the waste liquid recovery tank 17 may be set to a small value, and the amount of treatment liquid discharged at one time from the outer tank 112 may be reduced accordingly (ie, one drainage). Then, the value may be such that the outer tank 112 does not empty).

また、上記の各例において、処理液供給手段(処理液供給源121、処理液供給管122及び処理液バルブ123)は1つしか示されていないが、使用される処理液の種類に応じて、複数の処理液供給手段が設けられていてもよい。   In each of the above examples, only one treatment liquid supply means (treatment liquid supply source 121, treatment liquid supply pipe 122 and treatment liquid valve 123) is shown, but depending on the type of treatment liquid used. A plurality of processing liquid supply means may be provided.

また、上記の各例では外槽112から処理液を排出して、循環排液処理を行うようになっていたが、内槽111から新液を排出することで、循環排液処理を行うようにしてもよい。さらに、上記の各例では、処理槽11は内槽111と外槽112を備える構造であったが、1つの槽のみからなる処理槽であってもよい。   In each of the above examples, the treatment liquid is discharged from the outer tank 112 to perform the circulation drainage treatment, but the circulation liquid drainage treatment is performed by discharging the new liquid from the inner tank 111. You may Furthermore, in each of the above-described examples, the processing tank 11 has a structure including the inner tank 111 and the outer tank 112. However, the processing tank 11 may be a processing tank including only one tank.

1・・・基板処理装置
11・・・処理槽
111・・・内槽
112・・・外槽
121・・・処理液供給源
13・・・排液配管
131・・・内槽排液バルブ
132・・・外槽排液バルブ
133・・・ポンプ
134・・・ワンパス排液バルブ
14・・・循環配管
141・・・フィルタ
142・・・処理槽循環バルブ
15・・・バイパス配管
151・・・循環排液バルブ
16・・・制御部
17・・・廃液回収タンク
1 ... substrate processing apparatus 11 ... processing tank 111 ... inner tank 112 ... outer tank 121 ... processing liquid supply source 13 ... drainage piping 131 ... inner tank drainage valve 132 ... Outer tank drainage valve 133 ... Pump 134 ... One-pass drainage valve 14 ... Circulation piping 141 ... Filter 142 ... Treatment tank circulation valve 15 ... Bypass piping 151 ... Circulating drainage valve 16 ··· Control unit 17 · · · Waste liquid recovery tank

Claims (12)

基板を処理液で処理する基板処理装置であって、
前記処理液を貯留し、基板を浸漬させる処理槽と、
前記処理液を前記処理槽に供給する処理液供給手段と、
前記処理液が前記処理槽から装置外へと排液される際の流路となる排液配管と、
前記処理液をろ過するフィルタを備え、少なくとも一端が前記処理槽に連絡する循環配管と、
前記循環配管と前記排液配管とを連絡し、前記フィルタでろ過された前記処理液が、前記処理槽に戻らずに排液される際の流路となるバイパス配管と、
前記処理槽から排出される前記処理液の流路を切り替える開閉バルブと、
前記開閉バルブを制御する制御手段と、を有する基板処理装置。
A substrate processing apparatus for processing a substrate with a processing solution, comprising:
A processing tank for storing the processing solution and immersing the substrate;
Treatment liquid supply means for supplying the treatment liquid to the treatment tank;
A drainage pipe serving as a flow path when the treatment liquid is drained from the treatment tank to the outside of the apparatus;
A circulation pipe including a filter for filtering the processing solution, at least one end of which is in communication with the processing tank;
A bypass pipe that communicates the circulation pipe and the drainage pipe, and serves as a flow path when the processing solution filtered by the filter is drained without returning to the treatment tank;
An on-off valve for switching the flow path of the processing solution discharged from the processing tank;
And a control unit configured to control the on-off valve.
前記循環配管は一端が前記処理槽に接続し、他端は排液配管に接続しており、
前記開閉バルブには、前記処理槽から排出された前記処理液が前記排液配管のみを通って排液される流路と、前記処理槽から排出された前記処理液が前記排液配管から前記循環配管へと流れる流路と、を切り替えるワンパス排液バルブが含まれており、
前記処理槽から排出された前記処理液が前記排液配管から前記循環配管へと流れる場合には、前記循環配管は、前記処理液が前記処理槽との間で循環可能な流路を形成する
ことを特徴とする請求項1に記載の基板処理装置。
One end of the circulation pipe is connected to the treatment tank, and the other end is connected to a drainage pipe,
In the on-off valve, a flow path through which the treatment liquid discharged from the treatment tank drains only through the drainage pipe, and the treatment liquid discharged from the treatment tank from the drainage pipe Includes a one-pass drain valve that switches the flow path to the circulation piping,
When the treatment liquid discharged from the treatment tank flows from the drainage pipe to the circulation pipe, the circulation pipe forms a flow path through which the treatment liquid can circulate with the treatment tank. The substrate processing apparatus according to claim 1,
前記排液配管は、一端が前記処理槽に接続しており、該配管内の上流に前記処理槽から前記処理液を排出するか否かを切り替える処理槽排液バルブを備え、
前記循環配管は、一端が前記処理槽に連絡し他端が前記排液配管の前記処理槽排液バルブよりも下流に接続しており、前記フィルタと前記処理槽との間に位置する処理槽循環バルブを備え、
前記バイパス配管は、一端が前記フィルタと前記処理槽循環バルブとの間で前記循環配管と接続し、他端が前記循環配管が接続している位置よりも下流で前記排液配管と接続しており、前記バイパス配管内の流路を開閉する循環排液バルブを備え、
前記制御手段は、前記処理槽排液バルブ、ワンパス排液バルブ、処理槽循環バルブ、循環排液バルブ、の各バルブを開閉制御することによって、前記処理槽から排出された前記処理液が、前記循環配管の一部及び前記バイパス配管を流通して、前記処理槽に戻らずに排液される、循環排液処理を行う
ことを特徴とする請求項2に記載の基板処理装置。
One end of the drainage pipe is connected to the treatment tank, and a treatment tank drainage valve that switches whether or not the treatment liquid is drained from the treatment tank is provided upstream in the piping,
One end of the circulation pipe is in communication with the processing tank, and the other end is connected downstream of the processing tank drainage valve of the drainage pipe, and the processing tank is located between the filter and the processing tank. Equipped with a circulation valve,
One end of the bypass pipe is connected to the circulation pipe between the filter and the processing tank circulation valve, and the other end is connected to the drainage pipe downstream of a position where the circulation pipe is connected. A circulation drainage valve for opening and closing the flow passage in the bypass piping,
The control means controls the opening and closing of the treatment tank drainage valve, the one-pass drainage valve, the treatment tank circulation valve, and the circulation drainage valve to control the treatment liquid discharged from the treatment tank The substrate processing apparatus according to claim 2, characterized in that circulation drainage processing is performed, which circulates through a part of circulation piping and the bypass piping and is drained without returning to the processing tank.
前記処理槽から排出された処理液を回収する廃液回収タンクをさらに有しており、
前記排液配管は、一端が前記処理槽に接続し、他端が前記廃液回収タンクに接続しており、
前記制御手段は、前記廃液回収タンクの残容量の情報を取得し、前記廃液回収タンクに所定の残容量がある場合には、該所定の残容量以下の処理液を前記処理槽から排出して、前記循環排液処理を行う
ことを特徴とする、請求項3に記載の基板処理装置。
The liquid processing apparatus further comprises a waste liquid recovery tank for recovering the processing liquid discharged from the processing tank,
One end of the drainage pipe is connected to the processing tank, and the other end is connected to the waste liquid recovery tank,
The control means acquires information on the remaining capacity of the waste liquid recovery tank, and when the waste liquid recovery tank has a predetermined remaining capacity, discharges the processing liquid having a predetermined remaining capacity or less from the processing tank. The substrate processing apparatus according to claim 3, wherein the circulating drainage process is performed.
前記処理槽は、基板を浸漬させる内槽と、内槽の周囲を囲うように配置される外槽と、を備えており、
前記排液配管は、前記内槽と接続する内槽排液配管部、及び、前記外槽と接続する外槽排液配管部を備えており、
前記廃液回収タンクの所定の残容量は、前記外槽の容積以上に設定されており、
前記制御手段は、前記廃液回収タンクの残容量の情報を取得し、前記廃液回収タンクに所定の残容量がある場合には、前記外槽に貯留されている処理液を全て排出して前記循環
排液処理を行う、
ことを特徴とする、請求項4に記載の基板処理装置。
The processing tank includes an inner tank in which the substrate is immersed, and an outer tank disposed to surround the inner tank.
The drainage piping includes an inner tank drainage piping unit connected to the inner tank, and an outer tank drainage piping unit connected to the outer tank,
The predetermined remaining capacity of the waste liquid recovery tank is set to be equal to or greater than the capacity of the outer tank,
The control means acquires information on the remaining capacity of the waste liquid recovery tank, and when the waste liquid recovery tank has a predetermined remaining capacity, all the processing liquid stored in the outer tank is discharged for the circulation. Do drainage treatment,
The substrate processing apparatus according to claim 4, characterized in that:
前記処理液供給手段は、前記内槽に処理液を供給するように配置され、
前記処理槽は、前記内槽から溢れた処理液が前記外槽に貯留する構成であって、前記外槽への処理液の供給は、前記内槽を介して行われる
ことを特徴とする、請求項5に記載の基板処理装置。
The treatment liquid supply means is arranged to supply the treatment liquid to the inner tank,
The treatment tank is configured to store the treatment liquid overflowing from the inner tank in the outer tank, and the supply of the treatment liquid to the outer tank is performed via the inner tank. The substrate processing apparatus according to claim 5.
前記廃液回収タンクは、タンク内に回収された処理液を排出する流路及び該流路を開閉する廃液バルブを備え、
前記制御手段は、前記廃液回収タンクに回収された処理液の温度情報を取得し、前記廃液回収タンクに所定の残容量が無い場合において、前記廃液回収タンク内の処理液の温度が所定の温度以下であれば、前記廃液バルブの開閉制御を行うことによって前記廃液回収タンクから前記処理液を排出し、前記廃液回収タンクに所定の残容量を確保したうえで、前記循環排液処理を行う
ことを特徴とする、請求項4から6のいずれか1項に記載の基板処理装置。
The waste liquid recovery tank includes a flow path for discharging the treatment liquid collected in the tank and a waste liquid valve for opening and closing the flow path,
The control means acquires temperature information of the treatment liquid collected in the waste liquid recovery tank, and the temperature of the treatment liquid in the waste liquid recovery tank is a predetermined temperature when the waste liquid recovery tank does not have a predetermined remaining capacity. If it is the following, the processing liquid is discharged from the waste liquid recovery tank by performing the opening / closing control of the waste liquid valve, and the circulating drainage process is performed after securing a predetermined remaining capacity in the waste liquid recovery tank. The substrate processing apparatus according to any one of claims 4 to 6, characterized in that
前記制御手段は、前記循環排液処理が行われた回数の情報を取得し、前記処理液による基板の処理が終わるごとに、前記循環排液処理を所定の回数だけ繰り返し行う
ことを特徴とする、請求項3から7のいずれか1項に記載の基板処理装置。
The control means acquires information on the number of times the circulation drainage process has been performed, and repeats the circulation drainage process a predetermined number of times every time processing of the substrate with the treatment liquid is completed. The substrate processing apparatus according to any one of claims 3 to 7.
処理液を貯留し基板の浸漬処理を行う内槽及び該内槽から溢れた前記処理液を貯留する外槽を備える処理槽と、前記処理槽から前記処理液を排出する排液配管と、該排液配管に接続し、前記内槽と前記排液配管とを連絡する循環配管と、該循環配管及び前記排液配管に接続し、前記循環配管から処理槽を回避する流路を形成するバイパス配管と、を有する基板処理装置の洗浄方法であって、
前記浸漬処理に用いた使用済み処理液を前記処理槽から排出する洗浄準備ステップと、
前記内槽に清浄な処理液を供給し、さらに前記内槽を介して前記外槽に処理液を供給する処理槽洗浄ステップと、
前記清浄な処理液を外槽のみから排出し、前記排液配管、前記循環配管及びバイパス配管を介して排液する配管洗浄ステップと、を有する基板処理装置の洗浄方法。
A treatment tank comprising an inner tank for storing a treatment liquid and performing immersion processing of a substrate and an outer tank for storing the treatment liquid overflowing from the inner tank; a drainage pipe for discharging the treatment liquid from the treatment tank; A bypass pipe which is connected to a drainage pipe and which connects the inner tank and the drainage pipe, a circulation pipe which connects the circulation pipe and the drainage pipe, and which forms a flow path for avoiding a treatment tank from the circulation pipe What is claimed is: 1. A method of cleaning a substrate processing apparatus comprising:
A cleaning preparation step of discharging the used treatment liquid used for the immersion treatment from the treatment tank;
A treatment tank cleaning step of supplying a clean treatment liquid to the inner tank and further supplying the treatment liquid to the outer tank through the inner tank;
A cleaning method of a substrate processing apparatus, comprising: a pipe cleaning step of discharging the clean processing liquid only from an outer tank and draining the liquid through the drainage pipe, the circulation pipe and the bypass pipe.
前記配管洗浄ステップにおいて、一度に排液される処理液の量が、前記外槽の容積未満の所定量に定められている
ことを特徴とする、請求項9に記載の基板処理装置の洗浄方法。
The method for cleaning a substrate processing apparatus according to claim 9, wherein the amount of the processing liquid drained at one time in the pipe cleaning step is set to a predetermined amount smaller than the volume of the outer tank. .
前記基板処理装置は使用済みの処理液を回収する廃液回収タンクをさらに有しており、
前記外槽配管洗浄ステップの前工程として、
前記廃液回収タンクに前記所定量分の空きがあるかを確認する、タンク残容量確認ステップを有する
ことを特徴とする、請求項10に記載の基板処理装置の洗浄方法。
The substrate processing apparatus further includes a waste liquid recovery tank for recovering used processing liquid,
As a pre-process of the outer tank piping cleaning step,
The method for cleaning a substrate processing apparatus according to claim 10, further comprising a tank remaining capacity confirmation step of confirming whether the waste liquid recovery tank has an empty space for the predetermined amount.
前記タンク残容量確認ステップにおいて、前記廃液回収タンクに前記所定量分の空きが無かった場合には、
前記廃液回収タンク内の処理液の温度が、所定の排液可能温度以下か否かを確認し、
排液可能温度以下であれば、前記廃液回収タンク内の処理液をタンクから排出し、
排液可能温度を超えていれば、排液可能温度以下になるまで、待機と確認を繰り返す、タンク残容量確保ステップをさらに有する
ことを特徴とする、請求項11に記載の基板処理装置の洗浄方法。
In the remaining tank capacity confirmation step, when there is no space for the predetermined amount in the waste liquid recovery tank,
Check whether the temperature of the processing liquid in the waste liquid recovery tank is less than or equal to a predetermined drainable temperature,
If the temperature is equal to or less than the possible liquid discharge temperature, the processing liquid in the waste liquid recovery tank is discharged from the tank
12. The substrate processing apparatus according to claim 11, further comprising a step of securing a remaining tank capacity, repeating waiting and confirmation until the temperature becomes lower than the drainable temperature if it exceeds the drainable temperature. Method.
JP2017204671A 2017-10-23 2017-10-23 Cleaning method for board processing equipment and board processing equipment Active JP7056852B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017204671A JP7056852B2 (en) 2017-10-23 2017-10-23 Cleaning method for board processing equipment and board processing equipment
CN201880068015.8A CN111316400A (en) 2017-10-23 2018-10-10 Substrate processing apparatus and cleaning method for substrate processing apparatus
KR1020207012429A KR102382902B1 (en) 2017-10-23 2018-10-10 Substrate processing apparatus, cleaning method of substrate processing apparatus
PCT/JP2018/037802 WO2019082661A1 (en) 2017-10-23 2018-10-10 Substrate treatment device, and cleaning method of substrate treatment device
TW107137195A TWI690979B (en) 2017-10-23 2018-10-22 Substrate processing device and cleaning method of substrate processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017204671A JP7056852B2 (en) 2017-10-23 2017-10-23 Cleaning method for board processing equipment and board processing equipment

Publications (2)

Publication Number Publication Date
JP2019079881A true JP2019079881A (en) 2019-05-23
JP7056852B2 JP7056852B2 (en) 2022-04-19

Family

ID=66247386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017204671A Active JP7056852B2 (en) 2017-10-23 2017-10-23 Cleaning method for board processing equipment and board processing equipment

Country Status (5)

Country Link
JP (1) JP7056852B2 (en)
KR (1) KR102382902B1 (en)
CN (1) CN111316400A (en)
TW (1) TWI690979B (en)
WO (1) WO2019082661A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138022A (en) * 2019-05-31 2020-12-09 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus, substrate processing system and substrate processing method
JP7491791B2 (en) 2020-09-15 2024-05-28 株式会社Screenホールディングス Processing liquid supply device and supply tank cleaning method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112530790B (en) * 2020-11-03 2022-01-11 长江存储科技有限责任公司 Wafer cleaning device and wafer cleaning method
JP2022108144A (en) * 2021-01-12 2022-07-25 株式会社ジャパンディスプレイ Immersing apparatus
CN113053791B (en) * 2021-04-23 2022-11-29 上海珩旭机电设备有限公司 Nitrogen gas cleaning device
CN113714188A (en) * 2021-09-15 2021-11-30 新阳硅密(上海)半导体技术有限公司 Surface exhaust equipment and method for single-chip immersion type wet treatment process
CN113787049A (en) * 2021-09-15 2021-12-14 新阳硅密(上海)半导体技术有限公司 Groove type process method for single-chip wet treatment process
CN113600554B (en) * 2021-10-09 2021-12-07 南通欧能达超声设备有限公司 Ultrasonic chip cleaning equipment
CN115475797B (en) * 2022-09-30 2024-04-05 肇庆绿宝石电子科技股份有限公司 Laminated capacitor and manufacturing method thereof, carrier strip cleaning liquid and preparation method thereof
CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002210422A (en) * 2001-01-16 2002-07-30 Sony Corp Apparatus and method for cleaning substrate to be treated
JP2016178151A (en) * 2015-03-19 2016-10-06 東京エレクトロン株式会社 Device for liquid processing of substrate, method for liquid processing of substrate, and computer-readable storage medium with program for liquid processing of substrate stored therein

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3517134B2 (en) 1998-12-03 2004-04-05 大日本スクリーン製造株式会社 Substrate processing equipment
JP5890198B2 (en) 2011-03-25 2016-03-22 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
JP2015070080A (en) * 2013-09-27 2015-04-13 東京エレクトロン株式会社 Etching method, etching device and storage medium
JP2016063204A (en) 2014-09-22 2016-04-25 株式会社Screenホールディングス Cleaning method of substrate processing apparatus and substrate processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002210422A (en) * 2001-01-16 2002-07-30 Sony Corp Apparatus and method for cleaning substrate to be treated
JP2016178151A (en) * 2015-03-19 2016-10-06 東京エレクトロン株式会社 Device for liquid processing of substrate, method for liquid processing of substrate, and computer-readable storage medium with program for liquid processing of substrate stored therein

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138022A (en) * 2019-05-31 2020-12-09 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus, substrate processing system and substrate processing method
KR102341676B1 (en) 2019-05-31 2021-12-20 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus, substrate processing system and substrate processing method
JP7491791B2 (en) 2020-09-15 2024-05-28 株式会社Screenホールディングス Processing liquid supply device and supply tank cleaning method

Also Published As

Publication number Publication date
CN111316400A (en) 2020-06-19
TWI690979B (en) 2020-04-11
JP7056852B2 (en) 2022-04-19
WO2019082661A1 (en) 2019-05-02
KR20200060483A (en) 2020-05-29
KR102382902B1 (en) 2022-04-04
TW201923832A (en) 2019-06-16

Similar Documents

Publication Publication Date Title
JP7056852B2 (en) Cleaning method for board processing equipment and board processing equipment
KR102353792B1 (en) Liquid treatment device for substrate, cleaning method of liquid treatment device for substrate, and recording medium
US20150020968A1 (en) Substrate processing apparatus and substrate processing method
JP4828948B2 (en) Substrate processing equipment
JP2017208418A (en) Substrate liquid-processing device, tank cleaning method and storage medium
JP2007201330A (en) Substrate-treating device
JP2006066727A (en) Semiconductor manufacturing device and chemical exchanging method
JP2010021215A (en) Cleaning system and method for circulating cleaning fluid
JP5977058B2 (en) Treatment liquid supply apparatus and treatment liquid supply method
CN110571165A (en) cleaning device, cleaning method, semiconductor processing machine table and wafer processing method
KR102314052B1 (en) Filter cleaning method, liquid processing apparatus and storage medium
JP2002210422A (en) Apparatus and method for cleaning substrate to be treated
JPH0799177A (en) Immersion treatment apparatus for substrate
JP2000183024A (en) Substrate-processing apparatus
JPH09219386A (en) Cleaning equipment
KR101915358B1 (en) Semiconductor cleaning device and cleaning method by it
KR100949096B1 (en) Method for cleaning substrate
JP3517134B2 (en) Substrate processing equipment
WO2023282064A1 (en) Substrate treatment system and substrate treatment method
KR100664787B1 (en) Chemical exhaust system of cleaning bath
KR102583556B1 (en) Apparatus for supplying treating liquid and method for rmoving solid
JPH11176793A (en) Cleaning system
JP2022151639A (en) Substrate processing device, substrate processing method and computer readable recording medium
JP3517135B2 (en) Substrate processing equipment
JP2010225832A (en) Substrate processing apparatus and substrate processing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211027

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220308

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220328

R150 Certificate of patent or registration of utility model

Ref document number: 7056852

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150