JP2019053141A - 反射型露光マスクおよびパターン形成方法 - Google Patents
反射型露光マスクおよびパターン形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000006096 absorbing agent Substances 0.000 claims abstract description 95
- 230000031700 light absorption Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000007261 regionalization Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 13
- 230000002745 absorbent Effects 0.000 description 12
- 239000002250 absorbent Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000013256 coordination polymer Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
図7中に示すグラフELAは、吸収体の延在方向と直交する方向に露光光ELを照射した場合(図2(a)参照)のベストフォーカス位置の変化を示し、グラフELBは、吸収体の延在方向に平行な方向に露光光ELを照射した場合(図2(b)参照)のベストフォーカス位置の変化を示している。
図9中には、メモリセル領域MRにおける平均ライン幅とフォーカス位置との関係を示すデータと、周辺領域PRにおける平均ライン幅とフォーカス位置との関係を示すデータと、が記載されている。
Claims (7)
- ウェーハ上に感光膜を形成し、
反射型露光マスクに照射された露光光の反射光を集光することにより、前記感光膜上に所定のパターンを結像させ、
前記感光膜に前記パターンを転写するパターン形成方法であって、
前記ウェーハは、前記感光膜の表面に形成された段差を挟んで隣接する第1領域と第2領域とを有し、
前記反射型露光マスクは、前記露光光を反射する反射層と、前記反射層の表面上に設けられ前記露光光を吸収する光吸収層と、を含み、
前記光吸収層は、前記反射層の前記表面に沿った第1方向に延在し、前記第1領域に第1像を結像させる第1光吸収部と、前記第1方向に延在し、前記第2領域に第2像を結像させる第2光吸収部と、を含み、
前記第1光吸収部の前記反射層の前記表面に垂直な方向の厚さは、前記第2光吸収部の前記表面に垂直な方向の厚さよりも薄いパターン形成方法。 - 前記第1光吸収部の厚さと、前記第2光吸収部の厚さの差は、前記段差の高さに依存する請求項1記載のパターン形成方法。
- 前記第1像および前記第2像は、前記感光膜に対するそれぞれのベストフォーカス位置において結像される請求項1または2に記載のパターン形成方法。
- 前記光吸収層は、前記第1領域と前記第2領域との間に位置し、前記段差を含む第3領域に第3像を結像させる第3光吸収部をさらに含み、
前記第3像は、前記感光膜の前記第3領域以外の表面に垂直な方向のフォーカス位置が前記第1領域から前記第2領域に向かう方向に徐々に変化する集光条件において結像される請求項1〜3のいずれか1つに記載のパターン形成方法。 - 基板と、
前記基板上に設けられた反射層と、
前記反射層の表面上に設けられた光吸収層と、
を備え、
前記光吸収層は、前記反射層の前記表面に沿った第1方向に延在する第1吸収体と、前記表面に沿った第2方向であって前記第1方向と交差する第2方向に延在し、前記表面に垂直な第3方向の厚さが前記第1吸収体の前記第3方向の厚さよりも薄い第2吸収体と、を含む反射型露光マスク。 - 前記光吸収層は、前記反射層の前記表面に沿った方向に一定の周期で繰り返し配置された光吸収部を含み、
前記光吸収部は、前記第1吸収体と、前記第1吸収体に近接して設けられ、前記第1方向に延在する第3吸収体と、をそれぞれ含み、
前記第3吸収体の前記第3方向の厚さは、前記第1吸収体の前記第3方向の厚さよりも薄い請求項5記載の反射型露光マスク。 - 前記光吸収部は、前記第1吸収体と前記第3吸収体との間に配置された第4吸収体をさらに含み、
前記第4吸収体は、前記第1吸収体に近接する第1端部と、前記第3吸収体に近接する第2端部と、を含み、
前記第4吸収体の前記第3方向の厚さは、前記第1端部から前記第2端部に向かう方向において徐々に薄くなる請求項6記載の反射型露光マスク。
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JP2017176150A JP6829171B2 (ja) | 2017-09-13 | 2017-09-13 | 反射型露光マスクおよびパターン形成方法 |
US15/907,096 US10877375B2 (en) | 2017-09-13 | 2018-02-27 | Reflection type exposure mask and pattern forming method |
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JP2017176150A JP6829171B2 (ja) | 2017-09-13 | 2017-09-13 | 反射型露光マスクおよびパターン形成方法 |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03203737A (ja) * | 1989-12-29 | 1991-09-05 | Hitachi Ltd | マスクおよび露光装置 |
JPH04322419A (ja) * | 1991-04-22 | 1992-11-12 | Nippon Telegr & Teleph Corp <Ntt> | X線マスク |
JPH07122480A (ja) * | 1993-10-28 | 1995-05-12 | Sumitomo Electric Ind Ltd | 反射型マスク |
JPH0992599A (ja) * | 1995-09-25 | 1997-04-04 | Canon Inc | X線露光用マスクの作製方法及び該x線露光用マスクを用いたx線露光方法、及びx線露光装置、及びこれ等を用いた半導体ディバイスの製造方法及びそれで作られた半導体ディバイス |
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KR100735531B1 (ko) | 2006-03-21 | 2007-07-04 | 삼성전자주식회사 | 보상 패턴을 포함하는 반사형 포토마스크와 그 제조방법 및반사형 블랭크 포토마스크 |
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-
2017
- 2017-09-13 JP JP2017176150A patent/JP6829171B2/ja active Active
-
2018
- 2018-02-27 US US15/907,096 patent/US10877375B2/en active Active
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JPH03203737A (ja) * | 1989-12-29 | 1991-09-05 | Hitachi Ltd | マスクおよび露光装置 |
JPH04322419A (ja) * | 1991-04-22 | 1992-11-12 | Nippon Telegr & Teleph Corp <Ntt> | X線マスク |
JPH07122480A (ja) * | 1993-10-28 | 1995-05-12 | Sumitomo Electric Ind Ltd | 反射型マスク |
JPH0992599A (ja) * | 1995-09-25 | 1997-04-04 | Canon Inc | X線露光用マスクの作製方法及び該x線露光用マスクを用いたx線露光方法、及びx線露光装置、及びこれ等を用いた半導体ディバイスの製造方法及びそれで作られた半導体ディバイス |
JP2003249430A (ja) * | 2002-02-25 | 2003-09-05 | Sony Corp | 露光用マスクの製造方法および露光用マスク |
JP2006148113A (ja) * | 2004-11-16 | 2006-06-08 | Samsung Electronics Co Ltd | 電磁波反射用のマスク及びその製造方法 |
JP2007201306A (ja) * | 2006-01-30 | 2007-08-09 | Nikon Corp | 反射型レチクル及び反射型レチクルの製造方法 |
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US20190079387A1 (en) | 2019-03-14 |
JP6829171B2 (ja) | 2021-02-10 |
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