JP2019009259A5 - - Google Patents
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- JP2019009259A5 JP2019009259A5 JP2017123146A JP2017123146A JP2019009259A5 JP 2019009259 A5 JP2019009259 A5 JP 2019009259A5 JP 2017123146 A JP2017123146 A JP 2017123146A JP 2017123146 A JP2017123146 A JP 2017123146A JP 2019009259 A5 JP2019009259 A5 JP 2019009259A5
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017123146A JP7137913B2 (ja) | 2017-06-23 | 2017-06-23 | 半導体装置 |
| JP2022140753A JP7439196B2 (ja) | 2017-06-23 | 2022-09-05 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017123146A JP7137913B2 (ja) | 2017-06-23 | 2017-06-23 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022140753A Division JP7439196B2 (ja) | 2017-06-23 | 2022-09-05 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019009259A JP2019009259A (ja) | 2019-01-17 |
| JP2019009259A5 true JP2019009259A5 (enrdf_load_stackoverflow) | 2020-08-06 |
| JP7137913B2 JP7137913B2 (ja) | 2022-09-15 |
Family
ID=65026844
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017123146A Active JP7137913B2 (ja) | 2017-06-23 | 2017-06-23 | 半導体装置 |
| JP2022140753A Active JP7439196B2 (ja) | 2017-06-23 | 2022-09-05 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022140753A Active JP7439196B2 (ja) | 2017-06-23 | 2022-09-05 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP7137913B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI678793B (zh) * | 2019-01-31 | 2019-12-01 | 華邦電子股份有限公司 | 記憶元件及其製造方法 |
| US10872811B2 (en) | 2019-03-27 | 2020-12-22 | Winbond Electronics Corp. | Memory device and manufacturing method thereof |
| JP7193428B2 (ja) | 2019-08-09 | 2022-12-20 | 東京エレクトロン株式会社 | エッチング方法及び基板処理装置 |
| CN114787998A (zh) * | 2019-12-06 | 2022-07-22 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| JP7382848B2 (ja) | 2020-02-20 | 2023-11-17 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| WO2024236396A1 (ja) * | 2023-05-12 | 2024-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、半導体装置の作製方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5437776B2 (ja) | 2009-11-18 | 2014-03-12 | 三井金属鉱業株式会社 | 酸化物半導体を用いた薄膜トランジスタおよびその製造方法 |
| KR20120131682A (ko) | 2011-05-26 | 2012-12-05 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
| JP2013065382A (ja) * | 2011-09-20 | 2013-04-11 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2013247143A (ja) | 2012-05-23 | 2013-12-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP6509514B2 (ja) | 2014-09-17 | 2019-05-08 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US9634097B2 (en) * | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| JP6430302B2 (ja) * | 2015-03-13 | 2018-11-28 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置 |
| JP6400536B2 (ja) | 2015-08-04 | 2018-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
| US9773787B2 (en) * | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
| JP6495808B2 (ja) | 2015-11-17 | 2019-04-03 | 株式会社東芝 | 酸化物半導体及び半導体装置 |
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2017
- 2017-06-23 JP JP2017123146A patent/JP7137913B2/ja active Active
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2022
- 2022-09-05 JP JP2022140753A patent/JP7439196B2/ja active Active