JP2018538700A5 - - Google Patents

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Publication number
JP2018538700A5
JP2018538700A5 JP2018532131A JP2018532131A JP2018538700A5 JP 2018538700 A5 JP2018538700 A5 JP 2018538700A5 JP 2018532131 A JP2018532131 A JP 2018532131A JP 2018532131 A JP2018532131 A JP 2018532131A JP 2018538700 A5 JP2018538700 A5 JP 2018538700A5
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JP
Japan
Prior art keywords
layer
metal
barrier layer
oxidation
geometry
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Application number
JP2018532131A
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English (en)
Japanese (ja)
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JP2018538700A (ja
JP7111935B2 (ja
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Priority claimed from US14/974,012 external-priority patent/US9704804B1/en
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Publication of JP2018538700A publication Critical patent/JP2018538700A/ja
Publication of JP2018538700A5 publication Critical patent/JP2018538700A5/ja
Application granted granted Critical
Publication of JP7111935B2 publication Critical patent/JP7111935B2/ja
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JP2018532131A 2015-12-18 2016-12-19 半導体デバイスのための耐酸化障壁金属プロセス Active JP7111935B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/974,012 US9704804B1 (en) 2015-12-18 2015-12-18 Oxidation resistant barrier metal process for semiconductor devices
US14/974,012 2015-12-18
PCT/US2016/067495 WO2017106828A1 (en) 2015-12-18 2016-12-19 Oxidation resistant barrier metal process for semiconductor devices

Publications (3)

Publication Number Publication Date
JP2018538700A JP2018538700A (ja) 2018-12-27
JP2018538700A5 true JP2018538700A5 (cg-RX-API-DMAC10.html) 2020-01-30
JP7111935B2 JP7111935B2 (ja) 2022-08-03

Family

ID=59057739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018532131A Active JP7111935B2 (ja) 2015-12-18 2016-12-19 半導体デバイスのための耐酸化障壁金属プロセス

Country Status (5)

Country Link
US (3) US9704804B1 (cg-RX-API-DMAC10.html)
EP (1) EP3391408B1 (cg-RX-API-DMAC10.html)
JP (1) JP7111935B2 (cg-RX-API-DMAC10.html)
CN (1) CN108352328A (cg-RX-API-DMAC10.html)
WO (1) WO2017106828A1 (cg-RX-API-DMAC10.html)

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US10985011B2 (en) 2017-11-09 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with resistive elements
US11309265B2 (en) * 2018-07-30 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having conductive pad structures with multi-barrier films
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CN110676213B (zh) * 2019-09-18 2021-12-14 天津大学 一种针对小线宽要求的硅通孔互连铜线阻挡层优化方法
US12113020B2 (en) * 2021-02-24 2024-10-08 Applied Materials, Inc. Formation of metal vias on metal lines
US12610806B2 (en) * 2021-09-24 2026-04-21 Intel Corporation Interconnect structures with nitrogen-rich dielectric material interfaces for low resistance vias in integrated circuits

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