JP2018532293A - タイル張りの画像センサを用いた方法および装置 - Google Patents

タイル張りの画像センサを用いた方法および装置 Download PDF

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Publication number
JP2018532293A
JP2018532293A JP2018509503A JP2018509503A JP2018532293A JP 2018532293 A JP2018532293 A JP 2018532293A JP 2018509503 A JP2018509503 A JP 2018509503A JP 2018509503 A JP2018509503 A JP 2018509503A JP 2018532293 A JP2018532293 A JP 2018532293A
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sensor
substrate
tiles
adhesive
tile
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JP2018532293A5 (https=
Inventor
ブラッドレイ エス ジャドリッチ
ブラッドレイ エス ジャドリッチ
マーク イー シャファー
マーク イー シャファー
エドワード エー チックナー
エドワード エー チックナー
ティモシー ジェイ ウォジック
ティモシー ジェイ ウォジック
スティーブン エフ エンヅ
スティーブン エフ エンヅ
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ケアストリーム・デンタル・テクノロジー・トプコ・リミテッド
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Publication of JP2018532293A publication Critical patent/JP2018532293A/ja
Publication of JP2018532293A5 publication Critical patent/JP2018532293A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Measurement Of Radiation (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Toxicology (AREA)
JP2018509503A 2015-08-18 2016-07-26 タイル張りの画像センサを用いた方法および装置 Ceased JP2018532293A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/828,772 2015-08-18
US14/828,772 US9599723B2 (en) 2015-08-18 2015-08-18 Method and apparatus with tiled image sensors
PCT/US2016/043962 WO2017030751A1 (en) 2015-08-18 2016-07-26 Method and apparatus with tiled image sensors

Publications (2)

Publication Number Publication Date
JP2018532293A true JP2018532293A (ja) 2018-11-01
JP2018532293A5 JP2018532293A5 (https=) 2019-09-12

Family

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JP2018509503A Ceased JP2018532293A (ja) 2015-08-18 2016-07-26 タイル張りの画像センサを用いた方法および装置

Country Status (7)

Country Link
US (2) US9599723B2 (https=)
EP (1) EP3338111A1 (https=)
JP (1) JP2018532293A (https=)
KR (1) KR20180074660A (https=)
CN (1) CN108291972A (https=)
TW (1) TW201724548A (https=)
WO (1) WO2017030751A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017014798A1 (en) * 2015-07-17 2017-01-26 Analogic Corporation Detector unit for detector array of radiation imaging modality
US9599723B2 (en) * 2015-08-18 2017-03-21 Carestream Health, Inc. Method and apparatus with tiled image sensors
US10686003B2 (en) * 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
CN110582708A (zh) * 2017-05-01 2019-12-17 皇家飞利浦有限公司 多层辐射探测器
WO2018214135A1 (zh) * 2017-05-26 2018-11-29 深圳纽迪瑞科技开发有限公司 单按键及按键阵列
CN107361858A (zh) * 2017-08-29 2017-11-21 蒙显章 一次性手术定位膜及定位膜包
WO2019217516A1 (en) * 2018-05-08 2019-11-14 Eastern Blue Technologies, Inc. Module and methods of assembly for large area flat panel detectors
KR102393910B1 (ko) * 2019-03-22 2022-05-03 아크소프트 코포레이션 리미티드 타일형 이미지 센서
US11869912B2 (en) 2020-07-15 2024-01-09 Semiconductor Components Industries, Llc Method for defining a gap height within an image sensor package
CN114520239B (zh) * 2020-11-20 2025-05-13 京东方科技集团股份有限公司 X射线平板探测器及其制作方法、探测装置、成像系统
US12261186B2 (en) 2021-03-25 2025-03-25 Raytheon Company Mosaic focal plane array
US12181616B2 (en) 2021-04-14 2024-12-31 Canon Medical Systems Corporation Radiation detector module, radiation detector, and X-ray CT apparatus
JP2024065926A (ja) * 2022-10-31 2024-05-15 キヤノン株式会社 放射線検出装置、その製造方法、センサモジュール及びｃｔ装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298287A (ja) * 1995-09-28 1997-11-18 Canon Inc 光電変換装置及びｘ線撮像装置
US5827757A (en) * 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
JP2012027002A (ja) * 2010-06-24 2012-02-09 Canon Inc 放射線検出装置及び放射線撮像システム
JP2014002115A (ja) * 2012-06-20 2014-01-09 Canon Inc 放射線検出装置、その製造方法及び撮像システム
EP2735888A2 (en) * 2012-11-21 2014-05-28 Zakrytoe Akcionernoe Obshchestvo "Impul's" X-ray imaging detector, method for manufacturing a photosensitive element and an x-ray imaging detector

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3707760A (en) 1971-05-19 1973-01-02 Sieburg Ind Inc Method and device for article working such as fracturing of semiconductor slices and separating semiconductor chips
US4617420A (en) 1985-06-28 1986-10-14 The Standard Oil Company Flexible, interconnected array of amorphous semiconductor photovoltaic cells
US4942405A (en) 1988-10-11 1990-07-17 Hewlett-Packard Company Light emitting diode print head assembly
US5072074A (en) 1990-07-24 1991-12-10 Interflex Corporation High yield combined rigid and flexible printed circuits and method of manufacture
US5453145A (en) 1991-03-04 1995-09-26 Eastman Kodak Company Z-axis dimensional control in manufacturing an LED printhead
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
FR2693033B1 (fr) 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
JPH08509550A (ja) 1993-04-28 1996-10-08 ユニバーシティ オブ サリー 放射線検出器
US5670009A (en) 1995-02-28 1997-09-23 Eastman Kodak Company Assembly technique for an image sensor array
JP3805031B2 (ja) 1995-10-20 2006-08-02 キヤノン株式会社 光電変換装置
US5909244A (en) 1996-04-15 1999-06-01 Massachusetts Institute Of Technology Real time adaptive digital image processing for dynamic range remapping of imagery including low-light-level visible imagery
GB2315157B (en) 1996-07-11 1998-09-30 Simage Oy Imaging apparatus
US5834782A (en) 1996-11-20 1998-11-10 Schick Technologies, Inc. Large area image detector
JP3285815B2 (ja) 1998-03-12 2002-05-27 松下電器産業株式会社 リードフレーム，樹脂封止型半導体装置及びその製造方法
WO2001048831A1 (en) 1999-12-24 2001-07-05 Bae Systems Information And Electronic Systems Integration, Inc. Multi-color, multi-focal plane optical detector
JP3637826B2 (ja) 2000-01-21 2005-04-13 セイコーエプソン株式会社 半導体記憶装置
US6426991B1 (en) 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
US6510195B1 (en) 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6782076B2 (en) 2001-12-07 2004-08-24 Bede Scientific Instruments Limited X-ray topographic system
US7868665B2 (en) 2002-03-05 2011-01-11 Nova R&D, Inc. Integrated circuit and sensor for imaging
US6946661B2 (en) 2002-12-23 2005-09-20 Ge Medical Systems Global Technology Company, Llc Methods and apparatus for X-ray image detector assemblies
WO2004061478A1 (en) 2003-01-06 2004-07-22 Koninklijke Philips Electronics N.V. Radiation detector with shielded electronics for computed tomography
CA2542581A1 (en) * 2003-11-10 2005-05-26 Ls Technologies, Inc. Flat-panel detector utilizing electrically interconnecting tiled photosensor arrays
US20050098732A1 (en) 2003-11-10 2005-05-12 Ls Technologies, Inc. Flat-panel detector utilizing electrically interconnecting tiled photosensor arrays
US7067817B2 (en) 2004-01-29 2006-06-27 Hamamatsu Photonics K.K. Radiation image sensor and making method of same
WO2006018767A2 (en) 2004-08-13 2006-02-23 Koninklijke Philips Electronics, N.V. Solid state radiation detector packaging technique
US7539284B2 (en) 2005-02-11 2009-05-26 Besson Guy M Method and system for dynamic low dose X-ray imaging
US20060192087A1 (en) 2005-02-28 2006-08-31 Real Time Radiography Ltd. Two-dimensional CMOS-based flat panel imaging sensor
EP1934633A2 (en) 2005-10-05 2008-06-25 Koninklijke Philips Electronics N.V. Computed tomography detector using thin circuits
KR20080106453A (ko) 2006-03-30 2008-12-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 방사선 디텍터 어레이
US7692709B2 (en) 2006-05-12 2010-04-06 Ricoh Co., Ltd. End-to-end design of electro-optic imaging systems with adjustable optical cutoff frequency
WO2008003351A1 (en) 2006-07-04 2008-01-10 Mario Caria Imaging system with tiled sensor chips having partially overlapping active areas
US7450683B2 (en) 2006-09-07 2008-11-11 General Electric Company Tileable multi-layer detector
GB2446185A (en) 2006-10-30 2008-08-06 Sensl Technologies Ltd Optical assembly and method of assembly
US8718226B2 (en) 2008-11-21 2014-05-06 Trixell Assembly method for a tiled radiation detector
WO2012145038A1 (en) 2011-04-19 2012-10-26 Teledyne Rad-Icon Imaging Corp. Method of direct silicon tiling of a tiled image sensor array
US9012859B2 (en) 2012-05-18 2015-04-21 General Electric Company Tiled X-ray imager panel and method of forming the same
US9599723B2 (en) * 2015-08-18 2017-03-21 Carestream Health, Inc. Method and apparatus with tiled image sensors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298287A (ja) * 1995-09-28 1997-11-18 Canon Inc 光電変換装置及びｘ線撮像装置
US5827757A (en) * 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
JP2012027002A (ja) * 2010-06-24 2012-02-09 Canon Inc 放射線検出装置及び放射線撮像システム
JP2014002115A (ja) * 2012-06-20 2014-01-09 Canon Inc 放射線検出装置、その製造方法及び撮像システム
EP2735888A2 (en) * 2012-11-21 2014-05-28 Zakrytoe Akcionernoe Obshchestvo "Impul's" X-ray imaging detector, method for manufacturing a photosensitive element and an x-ray imaging detector

Also Published As

Publication number Publication date
EP3338111A1 (en) 2018-06-27
CN108291972A (zh) 2018-07-17
US9846246B2 (en) 2017-12-19
KR20180074660A (ko) 2018-07-03
WO2017030751A1 (en) 2017-02-23
US20170153334A1 (en) 2017-06-01
TW201724548A (zh) 2017-07-01
US20170052263A1 (en) 2017-02-23
US9599723B2 (en) 2017-03-21

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