JP2018530900A - 合金化銀ワイヤ - Google Patents
合金化銀ワイヤ Download PDFInfo
- Publication number
- JP2018530900A JP2018530900A JP2017563255A JP2017563255A JP2018530900A JP 2018530900 A JP2018530900 A JP 2018530900A JP 2017563255 A JP2017563255 A JP 2017563255A JP 2017563255 A JP2017563255 A JP 2017563255A JP 2018530900 A JP2018530900 A JP 2018530900A
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- JP
- Japan
- Prior art keywords
- wire
- range
- less
- core
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052709 silver Inorganic materials 0.000 claims abstract description 30
- 239000004332 silver Substances 0.000 claims abstract description 30
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010931 gold Substances 0.000 claims abstract description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052737 gold Inorganic materials 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 14
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 63
- 238000000137 annealing Methods 0.000 claims description 50
- 239000002243 precursor Substances 0.000 claims description 48
- 239000011247 coating layer Substances 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910000510 noble metal Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 3
- -1 Silver halide Chemical class 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000010998 test method Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000013590 bulk material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 210000001787 dendrite Anatomy 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000012266 salt solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000001887 electron backscatter diffraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
- B23K35/0266—Rods, electrodes, wires flux-cored
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
- B23K35/0272—Rods, electrodes, wires with more than one layer of coating or sheathing material
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
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Abstract
Description
(a)3〜6wt%(重量%(weight−%)、重量%(% by weight))の範囲、好ましくは4〜5wt%の範囲の量のパラジウムと、
(b)0.2〜2wt%の範囲、好ましくは0.5〜1.5wt%の範囲の量の金と、
(c)20〜700wt ppm(重量ppm(weight−ppm)、重量ppm(ppm by weight))の範囲、好ましくは275〜325のwt ppmの範囲の量のニッケルと、
(d)20〜500wt ppmの範囲、好ましくは75〜125wt ppmの範囲の量の白金と、
(e)91.88〜96.786wt%の範囲、好ましくは93.455〜95.3875wt%の範囲の量の銀と、
(f)0〜100wt ppmのさらなる成分(パラジウム、金、ニッケル、白金および銀以外の成分)とからなり、
wt%およびwt ppmにおけるすべての量は前記コアの総重量に基づき、
前記合金化銀ワイヤは、8〜80μmの範囲、または12〜55μmの範囲の平均直径を有する。
(i)30wt ppm未満のCu、
(ii)それぞれ2wt ppm未満のCr、Ce、Mg、La、Al、Be、In、Mn、Tiのうちのいずれか1種、
(iii)それぞれ15wt ppm未満のSi、Fe、Sのうちのいずれか1種
を含有する。
(1)平均ワイヤ粒径(平均粒径)は、10μm未満であり、例えば、2〜6μmの範囲にあり、好ましくは2〜4μmの範囲であることと、
(2)ワイヤ結晶粒[100]または[101]または[111]方位の面(plane of orientation)は、10%未満であり、例えば1〜8%の範囲にあり、好ましくは2〜7%の範囲であることと、
(3)ワイヤ双晶境界割合(wire twin boundary fraction)は、60%以下であり、例えば30〜60%の範囲、好ましくは45%〜50%の範囲であることと、
(4)FABは、2つのタイプの粒状組織、すなわち等軸粒(粒子がほぼ丸味を帯びており、不均一な境界を有する)および柱状粒(粒子が細長い)の組み合わせを示すことと、
(5)FAB平均粒径は、8μm以下であり、例えば3〜6μmの範囲にあり、好ましくは4〜5μmの範囲であることと、
(6)FAB結晶粒[101]方位の面は、25%未満であり、例えば8〜22%の範囲にあり、好ましくは16〜20%の範囲であることと、
(7)FAB双晶境界割合は70%未満であり、例えば30〜65%の範囲にあり、好ましくは55〜60%の範囲であることとのうちの1つ、
および/または少なくとも以下の外因的特性:
(α)耐食性は、2%以下、例えば0〜2%の範囲である、接合ボールリフト(接合されたボールの浮き上がり)の値を有する(下記に述べる「試験方法B」を参照)ことと、
(β)耐湿性は、2%以下、例えば0〜2%の範囲である、接合ボールリフトの値を有する(下記に述べる「試験方法C」を参照)ことと、
(γ)前記ワイヤコアの硬度は、90HV以下であり、例えば50〜90HVの範囲にあり、好ましくは70〜80HVの範囲である(下記に述べる「試験方法D」を参照)ことと、
(δ)ステッチボンディングに対するプロセスウィンドウ領域(process window area)は、少なくとも12000mA・gの値を有しており、例えば直径18μmのワイヤに対して13000〜14400mA・gを有する(詳細な開示および下記に述べる「試験方法E」を参照)ことと、
(ε)前記ワイヤの抵抗率は4.5μΩ・cm未満であり、例えば3〜4.2μΩ・cmの範囲にあり、好ましくは3.8〜4.0μΩ・cmの範囲である(下記に述べる「試験方法F」を参照)ことと、
(ζ)前記ワイヤの降伏強度は180MPa以下であり、例えば140〜180MPaの範囲である(下記に述べる「試験方法G」を参照)ことと、
(η)前記ワイヤの銀の樹枝状結晶成長は4μm/s以下であり、例えば2〜4μm/sの範囲にあり、好ましくは2〜3μm/sの範囲である(下記に述べる「試験方法H」を参照)こととのうちの1つを特徴とする。
(1)前駆物を提供するステップであって、前記前駆物は、
(a)3〜6wt%の範囲、好ましくは4〜5wt%の範囲の量のパラジウムと、
(b)0.2〜2wt%の範囲、好ましくは0.5〜1.5wt%の範囲の量の金と、
(c)20〜700wt ppmの範囲、好ましくは275〜325wt ppmの範囲の量のニッケルと、
(d)20〜500wt ppmの範囲、好ましくは75〜125wt ppmの範囲の量の白金と、
(e)91.88〜96.786wt%の範囲、好ましくは93.455〜95.3875wt%の範囲の量の銀と、
(f)0〜100wt ppmのさらなる成分とからなり、
wt%およびwt ppmにおけるすべての量は前記前駆物の総重量に基づく、ステップと、
(2)前記前駆物をワイヤコアの所望の最終直径が得られるまで伸長させてワイヤ前駆体を形成するステップと、
(3)工程ステップ(2)の完了後に得られたワイヤ前駆体を400〜600℃の範囲の炉設定温度で0.4〜0.8秒の範囲の曝露時間にわたって最終的にストランド焼鈍して、合金化銀ワイヤを形成するステップとを含み、
ステップ(2)は、400〜800℃の炉設定温度で50〜150分間の範囲の曝露時間にわたる伸長された前駆物の中間バッチ焼鈍の1つ以上のサブステップ、および/または400〜800℃の炉設定温度で0.4秒〜1.2秒の範囲の曝露時間にわたる伸長された前駆物の中間ストランド焼鈍の1つ以上のサブステップを含む。
(加えた力の上限値−加えた力の下限値)・(印加した超音波エネルギーの上限値−印加した超音波エネルギーの下限値)=ワイヤーボンディングプロセスウィンドウ。
フリーエアボールのためのKNS プロセス ユーザーズ ガイド(KNS Process User Guide for Free Air Ball)(クリック アンド ソファー インダストリーズ インコーポレテッド(Kulicke & Soffa Industries Inc.)、フォートワシントン、ペンシルベニア州、米国、2002、2009年5月31日)に記載されている手順に従って作業した。FABは、標準的な放電(シングルステップ、18mAのEFO電流、420μsのEFO時間)による従来の電気トーチ(electric flame−off:EFO)の放電(firing)を実施することにより調製した。
すべての試験および測定は、T=20℃および相対湿度RH=50%で行った。
ワイヤおよびFABの集合組織(texture)を測定するために採用された主要ステップは、試料調製、良好な菊池像を得ること、および成分の計算であった。
前記ワイヤをAl−0.5wt%Cuボンドパッドにボールボンドした。そのように接合したワイヤを有する試験装置を25℃で10分間にわたって塩溶液中に浸漬し、脱イオン(DI)水で洗浄し、その後アセトンで洗浄した。前記塩溶液はDI水中に20wt ppmのNaClを含有していた。浮き上がったボールの数を低倍率の顕微鏡(ニコンMM−40)下、100倍の倍率で調査した。多数の浮き上がったボールの観察は、重篤な界面のガルバニック腐食を示した。
前記ワイヤをAl−0.5wt%Cuボンドパッドにボールボンドした。そのように接合したワイヤを有する試験装置を高度加速ストレス試験(HAST)チャンバ内において130℃の温度、85%の相対湿度(RH)で8時間にわたって保存し、その後、浮き上がったボールの数を低倍率の顕微鏡(ニコンMM−40)下、100倍の倍率で調査した。多数の浮き上がったボールの観察は、重度の界面ガルバニック腐食を示した。
硬度は、ビッカース圧子を有したミツトヨ HM−200試験機を用いて測定した。10mNの押し込み荷重の力を12秒間の継続時間にわたってワイヤの試験片に印加した。該試験は前記ワイヤコアおよびFABの中心部において実施した。
ボンディングプロセスウィンドウ領域の測定は、標準手順によって行った。試験ワイヤは、KNS−iConn ボンダー ツール(クリック アンド ソファー インダストリーズ インコーポレテッド(Kulicke & Soffa Industries Inc.)、フォートワシントン、ペンシルベニア州、米国)を用いて接合した。プロセスウィンドウ値は、18μmの平均直径を有するワイヤに基づいており、前記ワイヤが接合されたリードフィンガーは銀からなっていた。
(1)低すぎる力および超音波エネルギーの供給は、前記ワイヤのリードフィンガー(NSOL)上における不着をもたらすことと、
(2)高すぎる力および超音波エネルギーの供給は、短いワイヤテール(SHTL)をもたらすことと
を克服することによって導き出した。
試験片、すなわち長さ1.0メートルのワイヤの両端を定電流/電圧を提供する電源に接続した。供給した電圧に対して抵抗を装置によって記録した。測定装置はHIOKI(日置電機)モデル3280−10であり、試験は少なくとも10個の試験片によって繰り返した。その測定値の算術平均を下記に与えられる計算に用いた。
前記ワイヤの引張特性は、インストロン(lnstron)−5564装置を用いて試験した。前記ワイヤは254mmのゲージ長(L)に関して2.54cm/分の速度で試験された。破壊(破断)時における荷重および伸びをASTM規格F219−96の通りに取得した。伸びは、引張試験の開始と終了との間におけるワイヤのゲージ長の差(ΔL)であり、通常、(100・LΔ/L)のようにパーセンテージで報告され、記録された負荷対伸び引張プロットから計算される。引張強度および降伏強度は、ワイヤ面積で割った破断荷重および降伏荷重から計算した。ワイヤの実直径は、ワイヤの標準長さを秤量し、ワイヤの密度を用いるサイジング法によって測定した。
50倍の倍率の低倍率顕微鏡ニコンM40モデルの対物レンズ下において、2本のワイヤをPTFE板上でミリメートル距離内で平行に維持した。電気的に接続される2本のワイヤ間に水滴をマイクロピペットによって形成した。一方のワイヤを正極に接続し、他方のワイヤを負極に接続して、それらのワイヤに5Vを与えた。2本のワイヤは、10kΩの抵抗器と直列に接続された閉回路において、5Vの直流でバイアスされた。前記回路は、電解質として数滴の脱イオン水によって前記2本のワイヤを濡らすことにより閉鎖された。銀は電解質中においてカソードからアノードへ電気移動して、銀の樹枝状結晶(silver dendrites)を形成し、時に2本のワイヤは架橋した。銀の樹枝状結晶の成長速度は合金添加物(alloying additions)に強く依存した。試験したワイヤの直径は75μmであった。
各場合において少なくとも99.99%の純度(「4N」)の銀(Ag)、パラジウム(Pd)および金(Au)の所定量をるつぼ内で溶融した。少量の銀−ニッケル母合金および銀−白金母合金を前記溶融物に添加し、撹拌によって添加した成分の一様な分散を確実にした。以下の銀−ニッケル母合金および銀−白金母合金を用いた。
Claims (16)
- ワイヤコアを含むか、またはワイヤコアからなる合金化銀ワイヤであって、前記ワイヤコア自体は、
(a)3〜6wt%の範囲の量のパラジウムと、
(b)0.2〜2wt%の範囲の量の金と、
(c)20〜700wt ppmの範囲の量のニッケルと、
(d)20〜500wt ppmの範囲の量の白金と、
(e)91.88〜96.786wt%の範囲の量の銀と、
(f)0〜100wt ppmのさらなる成分とからなり、
wt%およびwt ppmにおけるすべての量は前記コアの総重量に基づいており、
前記合金化銀ワイヤは8〜80μmの範囲の平均直径を有する、合金化銀ワイヤ。 - 12〜55μmの範囲の平均直径を有する、請求項1に記載の合金化銀ワイヤ。
- 前記パラジウムの量は、4〜5wt%の範囲である、請求項1または2に記載の合金化銀ワイヤ。
- 前記金の量は0.5〜1.5wt%の範囲である、請求項1乃至3のいずれか1項に記載の合金化銀ワイヤ。
- 前記ニッケルの量は、275〜325wt ppmの範囲である、請求項1乃至4のいずれか1項に記載の合金化銀ワイヤ。
- 前記白金の量は、75〜125wt ppmの範囲である、請求項1乃至5のいずれか1項に記載の合金化銀ワイヤ。
- 前記銀の量は、93.455〜95.3875wt%の範囲である、請求項1乃至6のいずれか1項に記載の合金化銀ワイヤ。
- 断面図において、円形、楕円形、または矩形の形状を有する、請求項1乃至7のいずれか1項に記載の合金化銀ワイヤ。
- 前記ワイヤコアは表面を有し、前記表面は、外面または前記ワイヤコアと前記ワイヤコア上に重ね合わせられたコーティング層との間の界面領域である、請求項1乃至8のいずれか1項に記載の合金化銀ワイヤ。
- 前記ワイヤコア上に重ね合わせられたコーティング層を有し、前記コーティング層は、貴金属元素から形成された単一層、または多数の重ね合わせられた隣接する副層から構成された多層であり、各副層は異なる貴金属元素から形成されている、請求項9に記載の合金化銀ワイヤ。
- 前記ワイヤコアは、以下の内因的特性:
(1)平均ワイヤ粒径は10μm未満であることと、
(2)ワイヤ結晶粒[100]または[101]または[111]方位の面は、10%未満であることと、
(3)ワイヤ双晶境界割合は60%以下であることと、
(4)FABは、2種類の粒状組織である、等軸粒子および柱状粒子の組み合わせを示すことと、
(5)FAB平均粒径は8μm以下であることと、
(6)FAB結晶粒[101]方位の面は、25%未満であることと、
(7)FAB双晶境界割合は70%未満であることと
のうちの少なくとも1つを特徴とし、
かつ/または以下の外因的特性:
(α)耐食性は2%以下の接合ボールリフトの値を有することと、
(β)耐湿性は2%以下の接合ボールリフトの値を有することと、
(γ)前記ワイヤコアの硬度は90HV以下であることと、
(δ)ステッチボンディングに対するプロセスウィンドウ領域は、少なくとも12000mA・gの値を有することと、
(ε)前記ワイヤの抵抗率は4.5μΩ・cm未満であることと、
(ζ)前記ワイヤの降伏強度は180MPa以下であることと、
(η)前記ワイヤの銀の樹枝状結晶成長は4μm/s以下であることと
のうちの少なくとも1つを特徴とする、請求項1乃至10のいずれか1項に記載の合金化銀ワイヤ。 - 請求項1乃至11のいずれか1項に記載の合金化銀ワイヤの製造方法であって、前記方法は、少なくとも、
(1)請求項1乃至7のいずれか1項に記載のワイヤコアの組成を有する前駆物を提供するステップと、
(2)前記前駆物をワイヤコアの所望の最終直径が得られるまで伸長させてワイヤ前駆体を形成するステップと、
(3)工程ステップ(2)の完了後に得られたワイヤ前駆体を400〜600℃の範囲の炉設定温度で0.4〜0.8秒の範囲の曝露時間にわたって最終的にストランド焼鈍して、合金化銀ワイヤを形成するステップとを含み、
ステップ(2)は、400〜800℃の炉設定温度で50〜150分間の範囲の曝露時間にわたる伸長された前駆物の中間バッチ焼鈍の1つ以上のサブステップ、および/または400〜800℃の炉設定温度で0.4秒〜1.2秒の範囲の曝露時間にわたる伸長された前駆物の中間ストランド焼鈍の1つ以上のサブステップを含む、方法。 - 最終ストランド焼鈍は、400〜500℃の範囲の炉設定温度で0.5〜0.7秒の範囲の曝露時間にわたって実施される、請求項12に記載の方法。
- 最終的にストランド焼鈍された合金化銀ワイヤは、1種以上の添加剤を含有し得る水中で急冷される、請求項12または13に記載の方法。
- 工程ステップ(2)の中間焼鈍、並びにステップ(3)の最終ストランド焼鈍は、不活性雰囲気中または還元雰囲気中で実施される、請求項12乃至14のいずれか1項に記載の方法。
- 請求項12乃至15のいずれか1項に記載の方法によって得られる合金化銀ワイヤ。
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