JP2018530162A - 半導体レーザおよび半導体レーザを製造するための方法 - Google Patents
半導体レーザおよび半導体レーザを製造するための方法 Download PDFInfo
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- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract
Description
A)半導体積層体をエピタキシャル成長させるステップ、ならびに好ましくはウェハ複合体のままで上記pコンタクト部およびnコンタクト部を製造するステップと、
B)半導体レーザ・チップを形成するために、例えばエッチングによってまたはスコアリングおよびブレーキングによって半導体積層体を個片化するステップ、ならびに中間キャリアに半導体レーザ・チップを設置するステップと、
C)仮のまたは恒久的な注型体を作成するステップであって、平面視で、注型体が半導体レーザ・チップの周りを全体的に取り囲み、注型体が半導体レーザ・チップを少なくとも時々機械的に互いに機械的接続する、注型体を作成するステップと、
D)補強層および/または外部電気コンタクト面を作り出すステップと、
E)例えば、永続的、恒久的な注型体を分割することによってまたは仮の注型体を除去することによっても半導体レーザを形成するために個片化するステップと
を含む。
2 半導体積層体
20 成長基板
21 p導電性領域
22 能動ゾーン
23 n導電性領域
25 ファセット
27 下側
28 上側
3 共振器通路
32 トレンチ
33 リッジ導波路
41 電気的pコンタクト部
43 電気的nコンタクト部
51 金属p補強層
53 金属n補強層
61 外部電気的pコンタクト面
63 外部電気的nコンタクト面
71 電気的分離部
72 電気的絶縁層
74 電気的絶縁層
81 注型体
82 コンタクト・ポッティング
9 中間キャリア
10 半導体レーザ・チップ
D 共振器通路−nコンタクト部距離
W1 nコンタクト部の直径
W2 電気的分離部の直径
Claims (16)
- n導電性領域(23)、p導電性領域(21)および前記領域間にある能動ゾーン(22)を有する半導体積層体(2)と、
半導体レーザ(1)の動作中に、レーザ放射(L)が生成され、前記能動ゾーン(22)に平行に向けられている少なくとも1つの共振器通路(3)と、
前記p導電性領域(21)上に位置し、前記p導電性領域(21)の中へ直接電流を印加するために設計されている電気的pコンタクト部(41)と、
前記n導電性領域(23)上に位置し、前記n導電性領域(23)の中へ直接電流を印加するために設計されている電気的nコンタクト部(43)と
を備え、
前記nコンタクト部(43)は、前記p導電性領域(21)から前記能動ゾーン(22)を通って前記n導電性領域(23)へ延び、平面視で、前記共振器通路(3)の横に位置する、
半導体レーザ(1)。 - 前記能動ゾーン(22)に垂直な方向では、前記半導体レーザ(1)の外部電気接触のための前記p導電性領域(21)上で前記共振器通路(3)から電気コンタクト面(61、63)へ向かう熱抵抗が、前記nコンタクト部(43)によって削減され、
前記nコンタクト部(43)は、前記共振器通路(3)が前記nコンタクト部(43)によって光学的に影響を受けない程度に前記共振器通路(3)から離されている、
請求項1に記載の半導体レーザ(1)。 - 前記nコンタクト部(43)は、前記能動ゾーン(22)に平行な少なくとも1つの断面で、前記半導体積層体(2)の材料によって周りを全体的に取り囲まれ、
前記nコンタクト部(43)および前記pコンタクト部(41)は、1つまたは複数の金属から各々構成され、
前記nコンタクト部(43)は、前記n導電性領域(23)内で終わる、
請求項1または2に記載の半導体レーザ(1)。 - 前記共振器通路(3)が画定されるリッジ導波路(33)を備え、
電流が、前記pコンタクト部(41)から前記リッジ導波路(33)上でのみ前記半導体積層体(2)の中へ印加され、
前記リッジ導波路(33)は、前記半導体積層体(2)内のトレンチ(32)によって両側を制限され、
前記トレンチ(32)は、前記pコンタクト部(41)で少なくとも部分的に埋められている、
請求項1〜3のいずれか一項に記載の半導体レーザ(1)。 - 前記pコンタクト部(41)および前記nコンタクト部(43)は、前記p導電性領域(21)の平面視で、重ならず、
前記共振器通路(3)は、前記能動ゾーン(22)内を延び、かつ前記半導体積層体(2)の相互に反対のファセット(25)に垂直に延び、
前記半導体レーザ(1)は、前記半導体積層体(2)用の成長基板(20)を備える、
請求項1〜4のいずれか一項に記載の半導体レーザ(1)。 - 前記nコンタクト部(43)は、前記p導電性領域(21)の平面視で、対称的な形状を有し、
前記共振器通路(3)は、対称軸である、
請求項1〜5のいずれか一項に記載の半導体レーザ(1)。 - 前記nコンタクト部(43)と前記共振器通路(3)との間の距離(D)が、前記能動ゾーン(22)の平面内で両端を含め5μmと80μmとの間であり、
前記能動ゾーン(22)を有する前記平面内では、前記nコンタクト部(43)で直接的に且つ前記共振器通路(3)と前記nコンタクト部(43)との間に、前記平面において電流が前記nコンタクト部(43)から前記共振器通路(3)へ流れないようにする電気的分離部(71)がある、
請求項1〜6のいずれか一項に記載の半導体レーザ(1)。 - 前記能動ゾーン(22)に垂直な前記方向では、前記半導体レーザ(1)の外部電気接触のための電気コンタクト面(61、63)までの前記共振器通路(3)からの熱抵抗が、前記nコンタクト部(43)によって少なくとも20%だけ削減される、
請求項1〜7のいずれか一項に記載の半導体レーザ(1)。 - 前記半導体レーザ(1)の前記外部電気接触のためのすべての電気コンタクト面(61、63)は、前記p導電性領域(21)が配置される前記能動ゾーン22の前記側に位置し、
前記半導体積層体(2)のすべてのファセット(25)および前記p導電性領域(21)から逸れた方を向く前記半導体積層体(2)の上側(28)には、メタライゼーションがない、
請求項1〜8のいずれか一項に記載の半導体レーザ(1)。 - 前記半導体積層体(2)から逸れた方を向く側の前記nコンタクト部(43)の直接上におよび前記pコンタクト部(41)の直接上に、金属補強層(51、53)が付けられている、
請求項1〜9のいずれか一項に記載の半導体レーザ(1)。 - 前記半導体積層体(2)から逸れた方を向く側の前記補強層(51、53)が、少なくとも1つの電気的絶縁層(72)によってところどころ覆われるだけであり、
前記半導体レーザ(1)の前記外部電気接触のための前記少なくとも2つの金属電気コンタクト面(61、63)が、前記絶縁層(72)の直接上に設けられ、
前記電気コンタクト面(61、63)は、前記p導電性領域(21)の平面視で、前記補強層(51、53)とは異なり且つ前記nコンタクト部(43)および前記pコンタクト部(41)とも異なるベース域を有する、
請求項9および10に記載の半導体レーザ(1)。 - 前記電気コンタクト面(61、63)は、前記p導電性領域(21)の平面視で、前記半導体積層体(2)から横方向に突き出し、
前記電気コンタクト面(61、63)は、前記能動ゾーン(22)に平行に整列する、
請求項9または11に記載の半導体レーザ(1)。 - 前記nコンタクト部(43)は、前記p導電性領域(21)の平面視で、互いに分離した複数の円形の部分領域によっておよび/または前記共振器通路(3)に沿って延びている少なくとも1つのストリップによって形成される、
請求項1〜12のいずれか一項に記載の半導体レーザ(1)。 - 前記半導体積層体(2)は、平面視で、注型体(81)によって周りを全体的に取り囲まれ、
前記注型体(81)は、プラスチックから形成され、
前記注型体(81)の厚さは、大きくとも3μmの許容範囲で、前記成長基板(20)と一体としての前記半導体積層体(2)の厚さに等しい、
請求項1〜13のいずれか一項に記載の半導体レーザ(1)。 - プラスチックを用いたまたはプラスチックからのコンタクト・ポッティング(82)をさらに備え、
前記半導体レーザ(1)の前記外部電気接触のためのすべての電気コンタクト面(61、63)が、平面視で、前記コンタクト・ポッティング(82)によって所々にまたは周りを全体的に、取り囲まれ、
前記コンタクト・ポッティング(82)は、前記能動ゾーン(22)から離れる方向では前記電気コンタクト面(61、63)と同一平面で終わる、
請求項1〜14のいずれか一項に記載の半導体レーザ(1)。 - 請求項1〜15のいずれか一項に記載の半導体レーザ(1)を製造する方法であって、
A)前記半導体積層体(2)のエピタキシャル成長、ならびに前記pコンタクト部(41)および前記nコンタクト部(43)の製造のステップと、
B)半導体レーザ・チップ(10)への個片化および中間キャリア(9)への前記半導体レーザ・チップ(10)の設置のステップと、
C)平面視で、周りを全体的に前記半導体レーザ・チップ(10)を取り囲み、前記半導体レーザ・チップ(10)を互いに機械的に接続する仮のまたは恒久的な注型体(81)を作成するステップと、
D)前記補強層(51、53)および/または前記外部電気コンタクト面(61、63)を製作するステップと、
E)前記半導体レーザ(1)への個片化および/または前記注型体(81)の除去のステップと
を含む、半導体レーザ(1)を製造する方法。
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