JP2018525766A - 有機エレクトロルミネセント装置及びその製造方法 - Google Patents
有機エレクトロルミネセント装置及びその製造方法 Download PDFInfo
- Publication number
- JP2018525766A JP2018525766A JP2017542430A JP2017542430A JP2018525766A JP 2018525766 A JP2018525766 A JP 2018525766A JP 2017542430 A JP2017542430 A JP 2017542430A JP 2017542430 A JP2017542430 A JP 2017542430A JP 2018525766 A JP2018525766 A JP 2018525766A
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- JP
- Japan
- Prior art keywords
- light emitting
- emitting unit
- layer
- organic electroluminescent
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
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- AHBDIQVWSLNELJ-UHFFFAOYSA-N 1-[3,5-bis(9h-carbazol-1-yl)phenyl]-9h-carbazole Chemical compound C12=CC=CC=C2NC2=C1C=CC=C2C1=CC(C=2C=3NC4=CC=CC=C4C=3C=CC=2)=CC(C2=C3NC=4C(C3=CC=C2)=CC=CC=4)=C1 AHBDIQVWSLNELJ-UHFFFAOYSA-N 0.000 description 1
- DBDOZRBRAYSLFX-UHFFFAOYSA-N 1-[4-[4-(9h-carbazol-1-yl)-2-methylphenyl]-3-methylphenyl]-9h-carbazole Chemical group N1C2=CC=CC=C2C2=C1C(C=1C=C(C(=CC=1)C=1C(=CC(=CC=1)C=1C3=C(C4=CC=CC=C4N3)C=CC=1)C)C)=CC=C2 DBDOZRBRAYSLFX-UHFFFAOYSA-N 0.000 description 1
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- UPSWHSOSMRAWEH-UHFFFAOYSA-N 2-n,3-n,4-n-tris(3-methylphenyl)-1-n,1-n,2-n,3-n,4-n-pentakis-phenylbenzene-1,2,3,4-tetramine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=C(N(C=3C=CC=CC=3)C=3C=C(C)C=CC=3)C(N(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 UPSWHSOSMRAWEH-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
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- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- QTKJEANDYJJJIT-UHFFFAOYSA-N bis(triphenylsilyloxy)alumanyloxy-triphenylsilane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)O[Al](O[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)O[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 QTKJEANDYJJJIT-UHFFFAOYSA-N 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- IYRGXJIJGHOCFS-UHFFFAOYSA-N neocuproine Chemical compound C1=C(C)N=C2C3=NC(C)=CC=C3C=CC2=C1 IYRGXJIJGHOCFS-UHFFFAOYSA-N 0.000 description 1
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 1
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- JSTHREDTMPIBEX-UHFFFAOYSA-N pyrene-2,7-diamine Chemical class C1=C(N)C=C2C=CC3=CC(N)=CC4=CC=C1C2=C43 JSTHREDTMPIBEX-UHFFFAOYSA-N 0.000 description 1
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- 239000011780 sodium chloride Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
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Abstract
Description
本出願は、2015年8月12日に提出した中国特許出願No.201510494604.0の優先権を主張し、その内容が全て本出願に援用される。
本発明は表示技術に関し、特に有機エレクトロルミネセント装置及びその製造方法に関する。
前記第1発光ユニットはモノクロの発光ユニットであってもよい。
前記第1発光ユニットはブルーライト発光ユニットであり、前記第2発光ユニットは黄色光発光ユニットであってもよい。
前記半透明の接続層の厚さは10nmを超えてもよい。
前記半透明の接続層の厚さはおよそ10nmから30nmの範囲にあってもよい。
前記ブルーライト発光ユニットの厚さはおよそ60nmからおよそ90nmの範囲にあってもよい。
前記ブルーライト発光ユニットの厚さはおよそ165nmからおよそ215nmの範囲にあってもよい。
前記反射電極は、銀及びアルミニウムのいずれかひとつ又はそれらの組み合わせにより作製されてもよい。
前記反射電極の厚さはおよそ200nmであってもよい。
別の方面において、本発明は、本発明で述べる、又は本発明で述べる方法により製造されるタンデム有機エレクトロルミネセント装置を含む表示装置を提供する。
半透明の接続層は銀により作製され、厚さがおよそ10nmから30nmの範囲にあってもよい。
Claims (20)
- 反射電極と、
前記反射電極上に設けられる第1発光ユニットと、
前記第1発光ユニットの前記反射電極から離れた側に設けられる半透明の接続層と、
前記半透明の接続層の前記第1発光ユニットから離れた側に設けられる少なくともひとつの第2発光ユニットと、
前記少なくともひとつの第2発光ユニットの前記半透明の接続層から離れた側に設けられる透明電極と、を含み、
前記半透明の接続層と前記反射電極とはマイクロキャビティを形成する、タンデム有機エレクトロルミネセント装置。 - 前記半透明の接続層と前記反射電極とは距離L±40nmにより互いに離して配置され、Lは2ΣnL+Qλ/2π=mλを基に算出され、nは、前記第1発光ユニットにおける第1発光層の屈折率を表し、Qは、前記半透明の接続層及び前記反射電極の反射鏡におけるラジアンで表されるフェーズシフトの和を表し、λは、素子から発光される光線のピーク波長を表し、mは、非負整数を表す、請求項1に記載のタンデム有機エレクトロルミネセント装置。
- 前記距離は、前記第1発光ユニットの厚さにより決まる、請求項2に記載のタンデム有機エレクトロルミネセント装置。
- 前記第1発光ユニットは、モノクロの発光ユニットである、請求項1に記載のタンデム有機エレクトロルミネセント装置。
- 前記第1発光ユニットはブルーライト発光ユニットであり、前記第2発光ユニットは黄色光発光ユニットである、請求項1に記載のタンデム有機エレクトロルミネセント装置。
- 前記半透明の接続層は、銀、アルミニウム、マグネシウム、カルシウム、イッテルビウム及びリチウムのいずれかひとつ又はそれらの組み合わせにより作製される、請求項5に記載のタンデム有機エレクトロルミネセント装置。
- 前記半透明の接続層の厚さは10nmを超える、請求項6に記載のタンデム有機エレクトロルミネセント装置。
- 前記半透明の接続層の厚さはおよそ10nmからおよそ30nmの範囲にある、請求項7に記載のタンデム有機エレクトロルミネセント装置。
- 前記黄色光発光ユニットは、黄色光発光層と、前記黄色光発光層の前記半透明の接続層に近い側に設けられる第1キャリア輸送層と、前記第1キャリア輸送層の前記半透明の接続層に近い側に設けられる第1キャリア注入層と、前記黄色光発光層の前記半透明の接続層から離れた側に設けられる第2キャリア輸送層と、前記第2キャリア輸送層の前記半透明の接続層から離れた側に設けられる第2キャリア注入層と、を含み、前記第1キャリア輸送層と前記第1キャリア注入層との厚さの和はおよそ20nmからおよそ35nmの範囲にある、請求項8に記載のタンデム有機エレクトロルミネセント装置。
- 厚さの和はおよそ25nmである、請求項9に記載のタンデム有機エレクトロルミネセント装置。
- 前記ブルーライト発光ユニットの厚さはおよそ60nmからおよそ90nmの範囲にある、請求項5又は9に記載のタンデム有機エレクトロルミネセント装置。
- 前記ブルーライト発光ユニットは、ブルーライト発光層と、前記ブルーライト発光層の前記半透明の接続層に近い側に設けられる第3キャリア輸送層と、前記第3キャリア輸送層の前記半透明の接続層に近い側に設けられる第3キャリア注入層と、前記ブルーライト発光層の前記半透明の接続層から離れた側に設けられる第4キャリア輸送層と、前記第4キャリア輸送層の前記半透明の接続層から離れた側に設けられる第4キャリア注入層と、を含む、請求項11に記載のタンデム有機エレクトロルミネセント装置。
- 前記ブルーライト発光ユニットの厚さはおよそ70nmである、請求項11又は12に記載のタンデム有機エレクトロルミネセント装置。
- 前記ブルーライト発光ユニットの厚さはおよそ165nmからおよそ215nmの範囲にある、請求項5又は9に記載のタンデム有機エレクトロルミネセント装置。
- 前記反射電極は、銀及びアルミニウムのいずれかひとつ又はそれらの組み合わせにより作製される、請求項1に記載のタンデム有機エレクトロルミネセント装置。
- 前記反射電極の厚さはおよそ80nmからおよそ300nmの範囲にある、請求項9又は15に記載のタンデム有機エレクトロルミネセント装置。
- 前記反射電極の厚さはおよそ200nmである、請求項16に記載のタンデム有機エレクトロルミネセント装置。
- 請求項1から17のいずれか一項に記載のタンデム有機エレクトロルミネセント装置を含む、表示装置。
- ベース基板上に反射電極を形成する工程と、
前記反射電極上に第1発光ユニットを形成する工程と、
前記第1発光ユニットの前記反射電極から離れた側に半透明の接続層を形成する工程と、
前記半透明の接続層の前記第1発光ユニットから離れた側に少なくともひとつの第2発光ユニットを形成する工程と、
前記少なくともひとつの第2発光ユニットの前記半透明の接続層から離れた側に透明電極を形成する工程と、を含み、
前記半透明の接続層と前記反射電極とはマイクロキャビティを形成する、タンデム有機エレクトロルミネセント装置の製造方法。 - 前記第1発光ユニットはブルーライト発光ユニットであり、前記第2発光ユニットは黄色光発光ユニットである、請求項19に記載のタンデム有機エレクトロルミネセント装置の製造方法。
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