JP2018506178A - 太陽電池金属被覆のための損傷緩衝体 - Google Patents
太陽電池金属被覆のための損傷緩衝体 Download PDFInfo
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Abstract
Description
Claims (20)
- 基板と、
前記基板に又は前記基板の上方に配設された半導体領域と、
前記半導体領域の上方に配設された第1の損傷緩衝体と、
前記第1の損傷緩衝体の上方に配設された第1の導電層と、
前記第1の導電層の上方に配設された第2の導電層と、
を備える太陽電池であって、前記第1の導電層及び第2の導電層は、前記第1の損傷緩衝体の上方の第1の場所にて共に接合されている、太陽電池。 - 前記第1の導電層及び第2の導電層は、前記第1の場所にて溶接継手によって共に接合されている、請求項1に記載の太陽電池。
- 前記接合された第1及び第2の導電層の第1の部分は、前記第1の損傷緩衝体の上方の第2の場所にて、前記接合された第1及び第2の導電層の第2の部分から分離されている、請求項1又は2に記載の太陽電池。
- 前記半導体領域の上方に配設された第2の損傷緩衝体を更に備える、請求項1から3の何れか一項に記載の太陽電池。
- 前記接合された第1及び第2の導電層の第1の部分は、前記第2の損傷緩衝体の上方の第1の場所にて、前記接合された第1及び第2の導電層の第2の部分から分離されている、請求項4に記載の太陽電池。
- 前記第1の導電層及び第2の導電層は、また、前記第2の損傷緩衝体の上方の第1の場所にて共に接合されている、請求項4又は5に記載の太陽電池。
- 前記第2の損傷緩衝体は、前記第1の損傷緩衝体と材料の異なる組成、又は、異なる厚さを含む、請求項4から6の何れか一項に記載の太陽電池。
- 前記第1の導電層及び第2の導電層は、櫛型接点フィンガーを含み、前記第2の場所は、前記櫛型接点フィンガーのそれぞれの間に配設されている、請求項3に記載の太陽電池。
- 前記第2の導電層は、金属箔である、請求項1から8の何れか一項に記載の太陽電池。
- 前記半導体領域は、交互のN型及びP型半導体領域を含み、前記第1の損傷緩衝体は、前記交互のN型及びP型半導体領域のそれぞれの領域間の場所と整合して配設されている、請求項1から9の何れか一項に記載の太陽電池。
- 太陽電池を製造する方法であって、
基板に又は基板の上方に配設された半導体領域上に第1の損傷緩衝体を形成する工程と、
前記第1の損傷緩衝体上に及び前記半導体領域上に第1の導電層を形成する工程と、
前記第1の導電層上に第2の導電層を形成する工程と、
前記第1の損傷緩衝体上の第1の場所にて、前記第2の導電層を前記第1の導電層に接合する工程と、を含む、方法。 - 前記第1の導電層及び第2の導電層をパターニングする工程を更に含む、請求項11に記載の方法。
- 前記第1の導電層及び第2の導電層をパターニングする前記工程は、前記第1の損傷緩衝体上の第2の場所にて実行される、請求項12に記載の方法。
- 前記第1の導電層及び第2の導電層をパターニングする前記工程は、前記半導体領域上に形成された第2の損傷緩衝体上の第1の場所にて実行される、請求項12又は13に記載の方法。
- パターニングする前記工程は、前記損傷緩衝体の少なくとも1つの部分を除去する工程を含む、請求項11から14の何れか一項に記載の方法。
- 接合する前記工程は、前記第1の場所にて、前記第2の導電層を前記第1の導電層にレーザ溶接する工程を含む、請求項11から15の何れか一項に記載の方法。
- 前記第1の損傷緩衝体を前記半導体領域上に形成する前記工程は、前記第1の損傷緩衝体を含む複数の溶接損傷緩衝体を印刷する工程を含む、請求項11から16の何れか一項に記載の方法。
- 複数のパターン損傷緩衝体を前記半導体領域上に印刷する工程を更に含む、請求項17に記載の方法。
- 前記複数の溶接損傷緩衝体を印刷する前記工程は、前記複数のパターン損傷緩衝体を印刷する前記工程と共に順次実行される、請求項18に記載の方法。
- 基板と、
前記基板に又は前記基板の上方に配設された交互のN型及びP型半導体領域と、
前記交互のN型及びP型半導体領域のそれぞれの領域と整合する複数の接合損傷緩衝体と、
前記損傷緩衝体の上方に配設された導電層と、
前記導電層の上方に配設された導電箔と、
を備える太陽電池であって、前記導電層及び導電箔は、前記複数の接合損傷緩衝体の上方の場所にて共に接合されている、太陽電池。
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US14/626,769 US9997651B2 (en) | 2015-02-19 | 2015-02-19 | Damage buffer for solar cell metallization |
PCT/US2016/016229 WO2016133695A1 (en) | 2015-02-19 | 2016-02-02 | Damage buffer for solar cell metallization |
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US11362220B2 (en) * | 2018-04-06 | 2022-06-14 | Sunpower Corporation | Local metallization for semiconductor substrates using a laser beam |
KR102098705B1 (ko) * | 2018-07-16 | 2020-04-08 | 한국에너지기술연구원 | P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지 |
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JP2021521633A (ja) * | 2018-04-06 | 2021-08-26 | サンパワー コーポレイション | 太陽電池ストリングのレーザー支援メタライゼーションプロセス |
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EP3259782A4 (en) | 2018-01-17 |
KR20170121210A (ko) | 2017-11-01 |
TW201642483A (zh) | 2016-12-01 |
US20160247948A1 (en) | 2016-08-25 |
CN107466427A (zh) | 2017-12-12 |
EP3259782A1 (en) | 2017-12-27 |
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US9997651B2 (en) | 2018-06-12 |
CN107466427B (zh) | 2021-05-18 |
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