JP2018182062A - Semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of appropriately performing a wire bonding.SOLUTION: A semiconductor light-emitting device A1 comprises: a substrate 1 including a base material 2 having a base principal surface 11 and a wiring pat 3; an LED chip 4; an insulation layer 5; and a penetration resin 6. The wiring pat 3 includes a wire bonding part 31. One end is connected to the LED chip 4. The other end comprises a wire 48 connected to a wire bonding part 41. The insulation layer 5 includes: a first surface 531 opposite to the LED chip 4 in a plan view while standing from the base principal surface 11; a second surface 532 oriented to the same side with the base principal surface 11 while being connected to the first surface 531; a third surface 533 stood from the second surface 532 while being connected to the side opposite to the first surface 531 from the second surface 532; and a forth surface 534 oriented to the same side with the base principal surface 11 while being connected to the third surface 533. The semiconductor light-emitting device includes: a first bending part 54 constructed by a boundary of the first surface 531 and the second surface 532, and a second bending part 55 constructed by the boundary of the third surface 533 and the fourth surface 534.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor light emitting device.

  A semiconductor light emitting device provided with an LED chip as a light source is used as a light emitting device such as various electronic devices. Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light emitting device disclosed in the document includes a substrate having a base and a wiring portion, and an LED chip mounted on the substrate. The LED chip is connected to the wiring portion by a wire.

  In such a method of manufacturing a semiconductor light emitting device, the LED chip is bonded to the substrate using various bonding materials. The bonding material includes a resin component which easily spreads along the substrate. If this resin component spreads in the wiring portion, it may cause a problem that the wire can not be properly bonded.

JP 2007-208150 A

  The present invention has been conceived under the above-described circumstances, and an object thereof is to provide a semiconductor light emitting device capable of performing wire bonding more appropriately.

  A semiconductor light emitting device provided by the present invention covers a substrate including a substrate having a substrate main surface and a wiring portion, an LED chip mounted on the substrate main surface of the substrate, and at least a part of the wiring portion. It is a semiconductor light-emitting device provided with the insulating layer and the translucent resin which covers the said LED chip, Comprising: The said wiring part contains a wire bonding part, One end is connected to the said LED chip, The other end is said wire bonding The insulating layer is connected to the first surface which faces the LED chip from the main surface of the substrate and faces the LED chip in plan view, and the same side as the main surface of the substrate A second surface facing the first surface, a third surface rising from the second surface, and a third surface facing the second surface, and the third surface facing the same side as the main surface of the substrate Including the fourth side It is characterized by having a second bending portion constituted by the boundary between the first bent portion and said third surface and said fourth surface which is constituted by the boundary of the first surface and the second surface.

  In a preferred embodiment of the present invention, the substrate is rectangular in plan view having four sides extending in the first direction and the second direction, and the LED chip and the wire bonding portion are separated in the first direction. ing.

  In a preferred embodiment of the present invention, the second bent portion has a main portion including a portion located between the LED chip and the wire bonding portion.

  In a preferred embodiment of the present invention, the main portion is arc-shaped in plan view.

  In a preferred embodiment of the present invention, the center of the arc shape in plan view of the main part coincides with the center of the LED chip.

  In a preferred embodiment of the present invention, the second bent portion has a first extension portion extending on the opposite side to the wire bonding portion in the first direction with respect to the main portion.

  In a preferred embodiment of the present invention, the second bending portion has a second extending portion extending outward in the second direction from the first extending portion.

  In a preferred embodiment of the present invention, the second bending portion has a pair of first extending portions separated in the second direction, and a connecting portion connecting the pair of first extending portions. .

  In a preferred embodiment of the present invention, the second bent portion has an intermediate portion interposed between the main portion and the first extension portion and extending in the second direction.

  In a preferred embodiment of the present invention, the first bent portion has a closed shape surrounding the LED chip in plan view.

  In a preferred embodiment of the present invention, the first bent portion has a circular shape whose center coincides with the center of the LED chip in a plan view.

  In a preferred embodiment of the present invention, the insulating layer is stacked on a first layer forming the first surface and the second surface, and formed on the first layer and forming the third surface and the fourth surface. And the second layer.

  In a preferred embodiment of the present invention, the insulating layer is composed of a fifth surface formed of the second layer and connected on the opposite side to the third surface with respect to the fourth surface, and the first layer. And a sixth surface facing the same side as the main surface of the substrate and connected to the fifth surface and formed by the first layer and having a seventh surface interposed between the sixth surface and the main surface of the substrate .

  In a preferred embodiment of the present invention, the light transmitting resin covers all of the second bent portions.

  In a preferred embodiment of the present invention, the light transmitting resin has a lens portion for refracting light from the LED chip.

  In a preferred embodiment of the present invention, a case having a reflective surface formed on the main surface of the substrate and surrounding the LED chip is provided.

  According to the present invention, since the insulating layer has the first bent portion and the second bent portion, wire bonding can be performed more appropriately.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

FIG. 1 is a perspective view showing a semiconductor light emitting device according to a first embodiment of the present invention. FIG. 1 is a plan view showing a semiconductor light emitting device according to a first embodiment of the present invention. FIG. 1 is a bottom view showing a semiconductor light emitting device according to a first embodiment of the present invention. It is sectional drawing in alignment with the IV-IV line of FIG. It is a principal part expanded sectional view which follows the IV-IV line of FIG. It is sectional drawing in alignment with the VI-VI line of FIG. It is a principal part expanded sectional view which follows the VI-VI line of FIG. It is a top view which shows an example of the manufacturing method of the semiconductor light-emitting device based on 1st Embodiment of this invention. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part enlarged plan view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a principal part expanded sectional view which follows the XVI-XVI line of FIG. It is a principal part top view showing an example of the manufacturing method of the semiconductor light-emitting device based on a 1st embodiment of the present invention. It is a top view which shows the semiconductor light-emitting device based on 2nd Embodiment of this invention. It is a top view which shows the semiconductor light-emitting device based on 3rd Embodiment of this invention. It is a top view which shows the semiconductor light-emitting device based on 4th Embodiment of this invention. It is a principal part expanded sectional view showing a semiconductor light-emitting device based on a 5th embodiment of the present invention. It is sectional drawing which shows the semiconductor light-emitting device based on 6th Embodiment of this invention. It is a top view which shows the semiconductor light-emitting device based on 7th Embodiment of this invention. It is a principal part expanded sectional view which follows the XXIV-XXIV line of FIG.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

  1 to 8 show a semiconductor light emitting device according to a first embodiment of the present invention. The semiconductor light emitting device A1 of the present embodiment includes the substrate 1, the LED chip 4, the wire 48, the insulating layer 5, and the light transmitting resin 6. The semiconductor light emitting device A1 is used, for example, as a light source module of various electronic devices.

  FIG. 1 is a perspective view showing a semiconductor light emitting device A1. FIG. 2 is a plan view showing the semiconductor light emitting device A1. FIG. 3 is a bottom view showing the semiconductor light emitting device A1. FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. FIG. 5 is an enlarged sectional view of an essential part taken along line IV-IV of FIG. 6 is a cross-sectional view taken along the line VI-VI of FIG. FIG. 7 is an enlarged sectional view of an essential part taken along line VI-VI of FIG. In these figures, the x direction corresponds to the first direction of the present invention, the y direction corresponds to the second direction of the present invention, and the z direction is a direction perpendicular to the x direction and the y direction.

  The substrate 1 is a base of the semiconductor light emitting device A1, and the LED chip 4 is mounted. The substrate 1 supports the LED chip 4 and constitutes a conduction path for supplying power to the LED chip 4. The substrate 1 of the present embodiment has a rectangular shape having a pair of first sides 21 along the x direction and a pair of second sides 22 along the y direction when viewed in the z direction. Further, the substrate 1 has a substrate main surface 11 and a substrate back surface 12. The substrate main surface 11 and the substrate back surface 12 are surfaces facing opposite to each other in the z direction.

  The substrate 1 comprises a base 2 and a wiring portion 3.

  The base 2 is made of, for example, an insulating material, and a specific example thereof is, for example, a glass epoxy resin. In the present embodiment, the base 2 is rectangular in the z direction. The size and the like of the substrate 2 are not particularly limited, and the z-direction thickness of the substrate 2 is, for example, 0.3 mm to 1.0 mm, and in the present embodiment, 0.5 mm. The dimensions of the substrate 2 in the x and y directions are, for example, 2.0 mm to 4.0 mm, and in the present embodiment, the dimensions in the x direction are 2.9 mm and the dimensions in the y direction are 2.4 mm. .

  The wiring portion 3 is formed on the base 2 and constitutes a conduction path to the LED chip 4. In the present embodiment, the wiring portion 3 includes a die bonding portion 31, a wire bonding portion 32, a pair of side portions 33, and a pair of back surface electrode portions 34.

  The material of the wiring portion 3 is not particularly limited as long as it has conductivity, and a metal such as Cu, Ni, Au, Fe, Al or the like is appropriately adopted. In the present embodiment, as shown in FIG. 5 and FIG. 7, the wiring portion 3 is composed of a first plating layer 301, a second plating layer 302 and a third plating layer 303. The first plating layer 301 is a layer directly formed on the substrate 2 and is made of, for example, Cu. The second plating layer 302 is formed in a region of the first plating layer 301 exposed from the insulating layer 5 and is made of, for example, Ni. The third plating layer 303 is stacked on the second plating layer 302 and is made of, for example, Au. The first plating layer 301 mainly functions to form a conduction path, and the second plating layer 302 and the third plating layer 303 mainly function to increase the bonding strength with the LED chip 4 and the wire 48. The thicknesses of the first plating layer 301, the second plating layer 302, and the third plating layer 303 are not particularly limited. For example, the thickness of the first plating layer 301 is 7 μm to 25 μm, and the second plating layer 302 The third plating layer 303 has a thickness of 0.1 μm to 0.5 μm.

  The die bonding portion 31 is a portion on which the LED chip 4 is mounted as shown in FIGS. 2 and 4 to 7, and in the present embodiment, is formed in a region including the center of the base 2 in z direction It is done. In the illustrated example, the die bonding unit 31 has two openings 311, an extension 312, and an extension 313.

  The two openings 311 are formed on the right side in the drawing (opposite the wire bonding portion 32) in the x direction from the center of the base 2 and are arranged side by side in the y direction. The opening 311 penetrates the die bonding portion 31 and has, for example, a rectangular shape in the z direction. The extension portion 312 is a portion extending from the center of the base material 2 in the z direction as viewed in the x direction to the left side (the wire bonding portion 32 side) in the figure, and has a rectangular shape in the z direction. The extension portion 313 is disposed apart from the extension portion 312 in the y direction, and extends to the left side (wire bonding portion 32 side) in the drawing in the x direction. Further, the die bonding portion 31 of the present embodiment exposes the right end portion of the base 2 in the x direction.

  The wire bonding portion 32 is provided on the left side of the die bonding portion 31 in the x direction in the drawing, and is a portion to which the wire 48 is bonded. In the present embodiment, the wire bonding portion 32 is provided spaced apart above the center of the substrate 2 in the y direction in the drawing.

  The pair of side portions 33 is formed along the second side 22 of the base material 2 and is connected to the substrate main surface 11 and the substrate back surface 12. One side portion 33 is connected to the die bonding portion 31, and the other side portion 33 is connected to the wire bonding portion 32. The pair of back surface electrode portions 34 is formed on the back surface 12 of the substrate and is separately connected to the pair of side portions 33. The pair of back surface electrode portions 34 is used, for example, as a portion for performing soldering etc. when mounting the semiconductor light emitting device A1 on a circuit board (not shown) of an electronic device or the like.

  The LED chip 4 is a light emission source of the semiconductor light emitting device A1, includes an active layer, an n-type semiconductor layer and a p-type semiconductor layer sandwiching the active layer, and is mounted on the die bonding portion 31 of the wiring portion 3 of the substrate 1 There is. The semiconductor which comprises LED chip 4 is not specifically limited, A GaN system semiconductor, an InGaN system semiconductor, a GaAs system semiconductor etc. are mentioned. In the present embodiment, the LED chip 4 is provided with electrodes (not shown) on both sides in the z direction. An electrode opposed to the die bonding portion 31 is bonded to the die bonding portion 31 by a bonding material 49. The bonding material 49 is not particularly limited, and in the present embodiment, a conductive bonding material formed of a paste containing, for example, Ag and a resin component 491 is used. Wires 48 are bonded to the other electrode. In the present embodiment, as shown in FIG. 2, the LED chip 4 is disposed so as to overlap the center of the substrate 2.

  The insulating layer 5 is formed on the substrate 1 and covers an appropriate position of the wiring portion 3 made of an insulating material. In the present embodiment, the insulating layer 5 is composed of the first layer 51 and the second layer 52. The first layer 51 is a layer formed directly on the substrate major surface 11 of the substrate 1. The second layer 52 is a layer stacked on the first layer 51. The first layer 51 and the second layer 52 are made of, for example, a resist film formed of a photosensitive resin material. The thickness of the first layer 51 and the second layer 52 is not particularly limited, and is, for example, 15 μm to 20 μm in the present embodiment.

  As shown in FIGS. 2 to 7, the first layer 51 has a die bonding portion covering portion 511 and a wire bonding portion covering portion 512. The die bonding portion covering portion 511 is a portion that partially covers the die bonding portion 31 of the wiring portion 3. In the illustrated example, the die bonding portion covering portion 511 has an opening 5111. The opening 5111 exposes a region of the die bonding portion 31 on which the LED chip 4 is to be mounted from the first layer 51. In the illustrated example, the opening 5111 is provided at a position including the center of the substrate 1 in the z-direction view. The opening 5111 has a circular shape whose center coincides with the center of the LED chip 4. Further, in the illustrated example, the first layer 51 exposes the extension portion 312 and the extension portion 313 of the die bonding portion 31.

  The wire bonding portion covering portion 512 is provided apart from the die bonding portion covering portion 511 in the x direction, and is a portion that partially covers the wire bonding portion 32. In the illustrated example, the wire bonding portion covering portion 512 is formed in a band shape extending in the y direction.

  At least a part of the second layer 52 is formed on the first layer 51, and in the illustrated example, all of the second layer 52 is formed on the first layer 51. Further, the second layer 52 is formed on the die bonding portion covering portion 511 in the illustrated example. The second layer 52 includes a main portion 521, a pair of middle portions 522, a pair of first extending portions 523 and a pair of second extending portions 524.

  The main portion 521 has a portion located on the left side in the drawing in the x direction (side where the wire bonding portion 32 exists) with respect to the LED chip 4. In the illustrated example, the main portion 521 is in the form of a strip having a circular arc shape in the z direction. Further, in the illustrated example, the center of the arc shape of the main portion 521 matches the center of the LED chip 4.

  The pair of intermediate portions 522 respectively extend from both ends of the main portion 521 in the y direction. In the illustrated example, the middle portion 522 is a band along the y direction. The pair of first extending portions 523 extends to the right in the figure (the opposite side to the wire bonding portion 32) in the x direction with respect to the main portion 521. In the illustrated example, the first extending portion 523 has a strip shape along the x direction. The pair of second extending portions 524 extends from the right end in the x direction of the pair of first extending portions 523 outward in the y direction. In the illustrated example, the second extending portion 524 has a strip shape along the y direction, and reaches the first side 21 of the substrate 1.

  Further, the insulating layer 5 includes a first surface 531, a second surface 532, a third surface 533, a fourth surface 534, a fifth surface 535, a sixth surface 536 and a seventh surface 537, and the first bent portion 54, A second bend 55, a third bend 56, and a fourth bend 57 are provided.

  The first surface 531 rises from the substrate main surface 11 of the substrate 1 and faces the LED chip 4 in the z direction. In the present embodiment, the first surface 531 is formed by the inner side surface of the opening 5111 of the first layer 51, and has a circular shape centered on the center of the LED chip 4 in the z direction.

  The second surface 532 is a surface connected to the first surface 531 and directed to the same side as the substrate main surface 11. In the present embodiment, the second surface 532 is constituted by the first layer 51.

  The third surface 533 is connected to the second surface 532 on the opposite side to the first surface 531, and is a surface standing up from the second surface 532. In the present embodiment, the third surface 533 is constituted by the end surface of the second layer 52.

  The fourth surface 534 is a surface connected to the third surface 533 and directed to the same side as the substrate main surface 11. In the present embodiment, the fourth surface 534 is configured by the second layer 52, and the shape in the z-direction view is the same as the second layer 52.

  The fifth surface 535 is connected to the fourth surface 534 opposite to the third surface 533, and has a portion facing the wire bonding portion 32 in a plan view. In the present embodiment, the fifth surface 535 is constituted by the end surface of the second layer 52.

  The sixth surface 536 is connected to the fifth surface 535 and faces the same side as the substrate main surface 11. In the present embodiment, the sixth surface 536 is configured by the first layer 51.

  The seventh surface 537 is a surface which is interposed between the sixth surface 536 and the substrate major surface 11 and which stands upright from the substrate major surface 11. In the present embodiment, the seventh surface 537 is constituted by the end surface of the first layer 51.

  The first bent portion 54 is formed by the boundary between the first surface 531 and the second surface 532 and has a bent cross-sectional shape. The second bent portion 55 is formed by the boundary between the third surface 533 and the fourth surface 534, and has a bent cross-sectional shape. The third bent portion 56 is formed by the boundary between the fourth surface 534 and the fifth surface 535, and has a bent cross-sectional shape. The fourth bent portion 57 is formed by the boundary between the sixth surface 536 and the seventh surface 537, and has a bent cross-sectional shape.

  As shown in FIG. 2, in the present embodiment, the first bending portion 54, the second bending portion 55, the third bending portion 56, and the fourth bending portion 57 are separated from each other in the z direction. Further, a part of the first bending portion 54, the second bending portion 55, the third bending portion 56, and the fourth bending portion 57 are parallel to each other in the z direction.

  More specifically, the second bent portion 55 is located on the opposite side to the LED chip 4 across the first bent portion 54 in the z direction. The second bending portion 55 of the present embodiment includes a main portion 551, a pair of middle portions 552, a pair of first extending portions 553, and a pair of second extending portions 554.

  The main portion 551 is configured along the end face of the main portion 521, and has a portion located on the left side in the drawing in the x direction with respect to the LED chip 4 (side where the wire bonding portion 32 exists). In the illustrated example, the main portion 551 has an arc shape in the z direction. Further, in the illustrated example, the center of the arc shape of the main portion 551 coincides with the center of the LED chip 4.

  The pair of intermediate portions 552 are configured along the end faces of the pair of intermediate portions 522, and extend in the y direction from both ends of the main portion 551. In the illustrated example, the middle portion 552 is linear along the y direction. The pair of first extending portions 553 are configured along the end faces of the pair of first extending portions 523, and the right side in the figure with respect to the main portion 551 in the x direction (opposite to the wire bonding portion 32) It extends to In the illustrated example, the first extending portion 553 is linear along the x direction. The pair of second extending portions 554 is configured along the end faces of the pair of second extending portions 524, and extends outward in the y direction from the right end in the x direction of the pair of first extending portions 553. . In the illustrated example, the second extending portion 554 is linear along the y direction, and reaches the first side 21 of the substrate 1.

  Further, in the present embodiment, a portion of the main portion 551 of the second bending portion 55 that is most separated from the LED chip 4 to the left side (wire bonding portion 32 side) from the LED chip 4 and the pair of second sides 22 of the substrate 1 The distance L1 to the second side 22 on the LED chip 4 side is larger than the distance L2 to the other second side 22. The area of the region of the substrate 1 opposite to the wire bonding portion 32 with respect to the second bending portion 55 in the x direction is the second bending portion 55 and the wire bonding portion covering portion 512 in the x direction. It is larger than the area of the region between These points are the same in the embodiments described later.

  The light transmitting resin 6 is formed on the substrate main surface 11 of the substrate 1 and covers the LED chip 4 and the insulating layer 5. The translucent resin 6 is made of a material that transmits the light from the LED chip 4 and is made of, for example, transparent epoxy resin or silicone resin. In addition, the translucent resin 6 may contain a fluorescent material that emits light of different wavelength by being excited by the light from the LED chip 4.

  As shown in FIGS. 1, 2, 4 and 6, the translucent resin 6 has a lens portion 61. The lens portion 61 has a shape bulging in the z direction, and functions to enhance directivity by refracting the light from the LED chip 4. Moreover, in the present embodiment, the light transmitting resin 6 reaches the pair of first sides 21 of the substrate 1 in the z direction, and is separated from the pair of second sides 22. In addition, the translucent resin 6 covers all of the insulating layer 5.

  Next, an example of a method of manufacturing the semiconductor light emitting device A1 will be described below with reference to FIGS.

  FIG. 8 shows a substrate material 20 used for manufacturing the semiconductor light emitting device A1. The substrate material 20 has a size capable of forming a plurality of semiconductor light emitting devices A 1, and is an assembly of a plurality of base materials 2. Substrate material 20 is made of, for example, glass epoxy resin. The substrate material 20 also has a plurality of slits 201. The plurality of slits 201 are elongated through holes each extending in the y direction, and are arranged at an equal pitch in the x direction.

  Next, as shown in FIG. 9, the metal film 30 is formed on the substrate material 20. The metal film 30 is formed, for example, by forming a plating film made of Cu on the entire surface of the substrate material 20 and then patterning the plating film by etching or the like. The metal film 30 has a plurality of die bonding portions 31 and a plurality of wire bonding portions 32. Further, in the die bonding portion 31, a pair of opening portions 311, extension portions 312 and extension portions 313 are formed. Die bonding portions 31 adjacent to each other in the y direction are connected to each other. Moreover, the wire bonding parts 32 adjacent to each other in the y direction are connected to each other.

  Next, as shown in FIG. 10, a first insulating film 510 is formed. The formation of the first insulating film 510 is performed, for example, by applying a photoresist material on the substrate main surface 11 of the substrate material 20 by a spin coating method or the like. Next, as shown in FIG. 11, the first insulating film 510 is patterned by a photolithography method or the like. Thus, the first insulating film 510 includes the plurality of die bonding portion covering portions 511 and the plurality of wire bonding portion covering portions 512. An opening 5111 is formed in the die bonding portion covering portion 511.

  Next, as shown in FIG. 12, a second insulating film 520 is formed. The second insulating film 520 is formed, for example, by applying a photoresist material on the main surface 11 of the substrate 20 by spin coating or the like so as to cover the first insulating film 510. Next, as shown in FIG. 13, the second insulating film 520 is patterned by a photolithography method or the like. Thus, the second insulating film 520 includes the plurality of main portions 521, the plurality of middle portions 522, the plurality of first extending portions 523 and the plurality of second extending portions 524 described above. Further, a first bending portion 54, a second bending portion 55, a third bending portion 56, and a fourth bending portion 57 are configured by the first insulating film 510 and the second insulating film 520.

  Next, as shown in FIG. 14, the LED chip 4 is mounted on the portion of the die bonding portion 31 exposed from the opening 5111. The mounting of the LED chip 4 is performed using a bonding material 49 such as Ag paste, for example. When the bonding material 49 is applied to the portion on which the LED chip 4 is to be mounted, the bonding material 49 contains a resin component 491 as shown in FIGS. 15 and 16. The resin component 491 has a property of easily spreading along the die bonding portion 31 and the insulating layer 5 after the application to the die bonding portion 31. For this reason, the resin component 491 may protrude from the die bonding portion 31 to the insulating layer 5. However, according to the inventor's research, it is confirmed that the spread of the resin component 491 tends to be blocked in the second bent portion 55 after the resin component 491 exceeds the first bent portion 54. Therefore, as well illustrated in FIG. 15, when the resin component 491 protruding from the exposed portion of the die bonding portion 31 reaches the second bent portion 55, the resin component 491 spreads along the second bent portion 55. Next, the wire 48 is bonded to the LED chip 4 and the wire bonding portion 32. At this time, since the resin component 491 of the bonding material 49 is prevented from reaching the wire bonding portion 32, bonding of the wire 48 to the wire bonding portion 32 can be appropriately performed.

  Next, as shown in FIG. 17, a translucent resin body 60 is formed. The transparent resin body 60 is formed, for example, by filling a liquid resin material in a mold attached to the substrate material 20 and curing the resin material. Alternatively, the translucent resin body 60 which has been molded in advance may be bonded to the substrate material 20. After this, the substrate material 20 and the translucent resin body 60 are collectively cut along the cutting lines 81. Thereby, a plurality of semiconductor light emitting devices A1 are obtained.

  Next, the operation of the semiconductor light emitting device A1 will be described.

  According to the present embodiment, as shown in FIGS. 5, 7 and 16, the first bending portion 54 and the second bending portion 55 are formed in the insulating layer 5. The second bent portion 55 is disposed to sandwich the second bent portion 55 with respect to the LED chip 4. Even if the bonding material 49 for mounting the LED chip 4 includes the resin component 491, when the resin component 491 passes the first bending portion 54 and reaches the second bending portion 55, the resin component 491 performs the second bending. It tends to spread along the second bend 55 more than the portion 55. Thus, the resin component 491 can be prevented from reaching the wire bonding portion 32 beyond the second bent portion 55, and the wire bonding portion 32 is covered with the resin component 491, so that bonding with the wire 48 is difficult. Can be avoided. Therefore, bonding of the wire 48 can be performed more appropriately.

  By forming the insulating layer 5 by the first layer 51 and the second layer 52, it is possible to form the first bent portion 54 and the second bent portion 55 having a clear shape. This is suitable for enhancing the blocking effect of the resin component 491.

  As shown in FIGS. 2 and 15, the second bent portion 55 has a main portion 551, and the main portion 551 has an arc shape centered on the center of the LED chip 4. Thus, the main portion 551 does not have a shape in which any part is extremely close to the LED chip 4, and the distances from the LED chip 4 are averaged. As a result, it is possible to prevent the resin component 491 from reaching an excessive amount to any part of the main portion 551, and the resin component 491 can be blocked more appropriately.

  The pair of intermediate portions 552 extend in the y direction from both ends of the main portion 551. Thus, the resin component 491 blocked by the main portion 551 can be released in the y direction.

  The pair of first extending portions 553 extends from the pair of middle portions 552 to the opposite side to the wire bonding portion 32 in the x direction. Thereby, the resin component 491 which has spread from the main portion 551 to the pair of intermediate portions 552 can be released to the side opposite to 32 in the x direction.

  The pair of second extending portions 554 extends outward from the pair of first extending portions 553 in the y direction. Thereby, the resin component 491 which has spread along the pair of first extending portions 553 can be released to the outside in the y direction.

  As shown in FIG. 2, when the distance L1 is larger than the distance L2, it is possible to enlarge the area of the region where the resin component 491 blocked by the second bending portion 55 can be retained, and the wire bonding portion 32 Can be more reliably prevented from reaching the resin component 491.

  18 to 24 show another embodiment of the present invention. In these figures, elements that are the same as or similar to the above embodiment are given the same reference numerals as the above embodiment.

  FIG. 18 shows a semiconductor light emitting device according to a second embodiment of the present invention. The semiconductor light emitting device A2 of the present embodiment is different from the above-described embodiment in the shape of the second layer 52.

  In the present embodiment, the second layer 52 includes a main portion 521, a pair of intermediate portions 522, a pair of first extending portions 523 and a connecting portion 526. The connecting portion 526 connects the ends of the pair of first extending portions 523 to each other, and has a strip shape along the y direction in the z direction. Further, by forming the connecting portion 526 in the second layer 52, the second bending portion 55 includes the main portion 551, the pair of intermediate portions 552, the pair of first extending portions 553, and the connecting portion 556. Have. The connecting portion 556 connects the pair of first extending portions 553 and has a linear shape along the y direction when viewed in the z direction. In addition, the second bent portion 55 has a closed shape in the z direction.

  Such an embodiment can also perform bonding of the wire 48 more appropriately. In addition, it is possible to prevent the resin component 491 spread along the second bent portion 55 from excessively spreading in an unintended region.

  FIG. 19 shows a semiconductor light emitting device according to a third embodiment of the present invention. In the semiconductor light emitting device A3 of this embodiment, the shape of the second layer 52 is different from that of the above-described embodiment.

  In the present embodiment, the second layer 52 includes a main portion 521, a pair of middle portions 522, a pair of first extending portions 523 and a connecting portion 526, and a pair of third extending portions 525. . The pair of third extending portions 525 has an arc shape in the z direction, and forms an arc shape with the main portion 551 centered on the center of the LED chip 4. Since the second layer 52 includes the pair of third extending portions 525, the second bending portion 55 of the present embodiment includes the pair of third extending portions 555. The pair of third extending portions 555 connect the main portion 551 and the pair of intermediate portions 552, and each have a pair of arc-shaped portions connected via the folding back portion.

  Such an embodiment can also perform bonding of the wire 48 more appropriately. Further, the second bent portion 55 has a pair of third extending portions 555, whereby the length of the second bent portion 55 is increased. Thereby, the effect that resin component 491 makes it hard to reach connecting part 556, for example can be expected.

  FIG. 20 shows a semiconductor light emitting device according to the fourth embodiment of the present invention. The semiconductor light emitting device A4 of the present embodiment is different from the above-described embodiment in the shape of the second layer 52.

  In the present embodiment, the second layer 52 has a main portion 521 and a pair of first extending portions 523. The pair of first extending portions 523 is connected to both ends of the main portion 521, and has a strip shape extending in the x direction. Also, the second bent portion 55 has a main portion 551 and a pair of first extending portions 553. Such an embodiment can also perform bonding of the wire 48 more appropriately.

  FIG. 21 shows a semiconductor light emitting device according to a fifth embodiment of the present invention. The semiconductor light emitting device A5 of the present embodiment is different from the above-described embodiment in the configuration of the insulating layer 5.

  In the present embodiment, the insulating layer 5 is formed of a single layer, and includes the first bending portion 54, the second bending portion 55, the third bending portion 56, and the fourth bending portion 57 described above. There is. Such an insulating layer 5 may have a first bent portion 54, a second bent portion 55, a third bent portion 56, and a fourth bent portion 57, for example, by removing and processing the edge by a method such as etching. It forms suitably by making the resist material apply | coated to 2 layers be hardened collectively. Such an embodiment can also perform bonding of the wire 48 more appropriately.

  FIG. 22 shows a semiconductor light emitting device according to the sixth embodiment of the present invention. The semiconductor light emitting device A6 of the present embodiment is different from the above-described embodiment in that a case 7 is provided.

  The case 7 is attached to the substrate 1 and made of, for example, a white resin. The case 7 has a reflective surface 71 surrounding the LED chip 4 in the z direction. The reflective surface 71 is inclined with respect to the z direction, and functions to reflect the light from the LED chip 4 upward in the z direction. The translucent resin 6 of the present embodiment is filled in the space surrounded by the case 7, and the upper surface in the z direction is flat. In the present embodiment, various configurations can be adopted as the configuration of the insulating layer 5 including the configurations of all the embodiments described above. Such an embodiment can also perform bonding of the wire 48 more appropriately.

  FIG. 24 and FIG. 25 show a semiconductor light emitting device according to the seventh embodiment of the present invention. The semiconductor light emitting device A7 of the present embodiment is different from the above-described embodiment in the configuration of the insulating layer 5.

  The insulating layer 5 of the present embodiment is constituted only by the first layer 51. The first layer 51 of this embodiment is similar in shape in the z direction to the second layer 52 of the semiconductor light emitting device A1, and includes a main portion 516, a pair of intermediate portions 517, a pair of first extending portions 518, and A pair of second extending portions 519 is provided. The main portion 516 has the same shape as the main portion 521 of the semiconductor light emitting device A1, and the pair of middle portions 517 has the same shape as the pair of middle portions 522 of the semiconductor light emitting device A1, and the pair of first extensions The portion 518 has the same shape as the pair of first extending portions 523 of the semiconductor light emitting device A1, and the pair of second extending portions 519 has the same shape as the pair of second extending portions 524 of the semiconductor light emitting device A1. It is a shape.

  Since the first layer 51 has the same shape as the second layer 52 of the semiconductor light emitting device A1, the first bent portion 54 of this embodiment has the same shape as the second bent portion 55 of the semiconductor light emitting device A1. . That is, the first bent portion 54 of the present embodiment has a main portion 546, a pair of middle portions 547, a pair of first extending portions 548, and a pair of second extending portions 549. The main portion 546 has the same shape as the main portion 551 in the semiconductor light emitting device A1, and the pair of middle portions 547 has the same shape as the pair of middle portions 552 of the semiconductor light emitting device A1. The portion 548 has the same shape as the pair of first extending portions 553 of the semiconductor light emitting device A1, and the pair of second extending portions 549 has the same shape as the pair of second extending portions 554 of the semiconductor light emitting device A1. It is a shape.

  Further, a portion of the main portion 546 of the first bending portion 54 that is most separated from the LED chip 4 to the left in the x direction (wire bonding portion 32 side) and the second side 22 of the substrate 1 The distance L1 to the two sides 22 is larger than the distance L2 to the other second side 22. Further, the area of the region of the substrate 1 opposite to the wire bonding portion 32 with respect to the first bending portion 54 in the x direction is the first bending portion 54 and the wire bonding portion covering portion 512 in the x direction. It is larger than the area of the region between

  Such an embodiment can also perform bonding of the wire 48 more appropriately.

  The semiconductor light emitting device according to the present invention is not limited to the embodiment described above. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be varied in design in many ways.

A1, A2, A3, A4, A5, A6, A7: Semiconductor light emitting device 1: Substrate 2: Substrate 3: Wiring portion 4: LED chip 5: Insulating layer 6: Translucent resin 7: Case 11: Substrate main surface 12 Substrate back surface 20: Substrate material 21: first side 22: second side 30: metal film 31: die bonding portion 32: wire bonding portion 33: side portion 34: back surface electrode portion 48: wire 49: bonding material 51: first First layer 52: second layer 54: first bent portion 55: second bent portion 56: third bent portion 57: fourth bent portion 60: light transmitting resin body 61: lens portion 71: reflective surface 81: cutting line 201 Slit 301: first plating layer 302: second plating layer 303: third plating layer 311: opening 312: extension 313: extension 491: resin component 510: first insulating film 511: coating of die bonding portion Part 512 A wire bonding portion covering portion 516: main portion 517: middle portion 518: first extending portion 519: second extending portion 520: second insulating film 521: main portion 522: middle portion 523: first extending portion 524 A second extending portion 525: a third extending portion 526: a connecting portion 531: a first surface 532: a second surface 533: a third surface 534: a fourth surface 535: a fifth surface 536: a sixth surface 537: a sixth surface Seven sides 546: Main portion 547: Middle portion 548: First extending portion 549: Second extending portion 551: Main portion 552: Middle portion 553: First extending portion 554: Second extending portion 555: Third portion Extension part 556: Connection part 5111: Opening L1, L2: Distance

Claims (16)

A substrate including a substrate main surface and a substrate including a wiring portion;
An LED chip mounted on the main surface of the substrate;
An insulating layer covering at least a part of the wiring portion;
A light emitting resin covering the LED chip;
The wiring portion includes a wire bonding portion,
And a wire having one end connected to the LED chip and the other end connected to the wire bonding portion,
The insulating layer rises from the main surface of the substrate and has a first surface facing the LED chip in plan view, a second surface connected to the first surface and facing the same surface as the main surface of the substrate, the second surface And a fourth surface connected to the opposite side to the first surface and standing up from the second surface, and a fourth surface connected to the third surface and facing the same side as the main surface of the substrate; What is claimed is: 1. A semiconductor light emitting device comprising: a first bending portion formed by a boundary between a surface and the second surface; and a second bending portion formed by a boundary between the third surface and the fourth surface. The substrate is rectangular in plan view having four sides extending in the first direction and the second direction,
The semiconductor light emitting device according to claim 1, wherein the LED chip and the wire bonding portion are separated in the first direction.   The semiconductor light emitting device according to claim 2, wherein the second bent portion has a main portion including a portion located between the LED chip and the wire bonding portion.   The semiconductor light emitting device according to claim 3, wherein the main portion has an arc shape in a plan view.   The semiconductor light-emitting device according to claim 4, wherein the center of the arc shape in plan view of the main portion coincides with the center of the LED chip.   The semiconductor light-emitting device according to any one of claims 3 to 5, wherein the second bending portion has a first extension portion extending on the opposite side to the wire bonding portion in the first direction with respect to the main portion. apparatus.   7. The semiconductor light emitting device according to claim 6, wherein the second bent portion has a second extending portion extending outward in the second direction from the first extending portion.   The semiconductor light emitting device according to claim 6, wherein the second bending portion has a pair of the first extending portions separated in the second direction, and a connecting portion connecting the pair of first extending portions. .   The semiconductor light emitting device according to any one of claims 6 to 7, wherein the second bent portion has an intermediate portion interposed between the main portion and the first extending portion and extending in the second direction.   The semiconductor light emitting device according to any one of claims 2 to 9, wherein the first bent portion has a closed shape surrounding the LED chip in a plan view.   The semiconductor light-emitting device according to claim 10, wherein the first bent portion has a circular shape whose center coincides with the center of the LED chip in a plan view.   The insulating layer includes a first layer forming the first surface and the second surface, and a second layer laminated to the first layer and forming the third surface and the fourth surface. The semiconductor light-emitting device according to any one of 1 to 11.   The insulating layer is formed of the second layer, and a fifth surface connected to the side opposite to the third surface with respect to the fourth surface, the first layer, and the same side as the main surface of the substrate The semiconductor light-emitting device according to claim 12, comprising: a sixth surface facing to the fifth surface facing the first surface, and a seventh surface formed by the first layer and interposed between the sixth surface and the main surface of the substrate. .   The semiconductor light emitting device according to any one of claims 1 to 13, wherein the light transmitting resin covers all of the second bent portions.   The semiconductor light emitting device according to any one of claims 1 to 14, wherein the light transmitting resin has a lens portion that refracts light from the LED chip.   The semiconductor light-emitting device according to any one of claims 1 to 13, further comprising a case having a reflective surface formed on the main surface of the substrate and surrounding the LED chip.

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