JP2018173520A - レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 - Google Patents
レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 Download PDFInfo
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- JP2018173520A JP2018173520A JP2017071095A JP2017071095A JP2018173520A JP 2018173520 A JP2018173520 A JP 2018173520A JP 2017071095 A JP2017071095 A JP 2017071095A JP 2017071095 A JP2017071095 A JP 2017071095A JP 2018173520 A JP2018173520 A JP 2018173520A
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Abstract
Description
多層レジスト法に用いられるレジスト下層膜材料であって、
(A1)下記一般式(1)で示される繰返し単位の一種又は二種以上を含む重合体(1A)、
(A2)式量2,000以下の、3,4−ジヒドロキシフェニル基を有さないポリフェノール化合物の一種又は二種以上、及び
(B)有機溶剤
を含有するレジスト下層膜材料を提供する。
(I−1)被加工基板上に、上記のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(I−2)該レジスト下層膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(I−3)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、及び
(I−4)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有するパターン形成方法を提供する。
(II−1)被加工基板上に、上記のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(II−2)該レジスト下層膜上に、レジスト中間膜を形成する工程、
(II−3)該レジスト中間膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(II−4)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、
(II−5)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記レジスト中間膜にパターンを転写する工程、及び
(II−6)該パターンが転写されたレジスト中間膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有するパターン形成方法を提供する。
(III−1)被加工基板上に、上記のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(III−2)該レジスト下層膜上に、ケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスク中間膜を形成する工程、
(III−3)該無機ハードマスク中間膜上に、有機反射防止膜を形成する工程、
(III−4)該有機反射防止膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(III−5)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、
(III−6)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記有機反射防止膜及び前記無機ハードマスク中間膜にパターンを転写する工程、及び
(III−7)該パターンが転写された無機ハードマスク中間膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有するパターン形成方法を提供する。
また、本発明のパターン形成方法であれば、多層レジスト法(2層レジストプロセス、3層レジストプロセス、又は4層レジストプロセス)による微細なパターンの形成が可能であり、またレジスト下層膜の形成によって被加工基板上の段差の埋め込みや被加工基板の平坦化を行うことができる。従って、本発明のパターン形成方法は、ウェットエッチング加工プロセス、下層膜形成による平坦化プロセス、ドライエッチングによる下層膜除去プロセスに好適に用いられ、半導体装置製造用の微細パターニングに適用される多層レジストプロセスに用いられるパターン形成方法として極めて有用である。
さらに、本発明のレジスト下層膜形成方法であれば、良好なアルカリ性過酸化水素水耐性、優れた埋め込み/平坦化特性、及び優れたドライエッチング特性を有するレジスト下層膜を形成できる。
本発明のレジスト下層膜材料は、多層レジスト法に用いられるレジスト下層膜材料であって、(A1)下記一般式(1)で示される繰返し単位の一種又は二種以上を含む重合体(1A)、(A2)式量2,000以下の、3,4−ジヒドロキシフェニル基を有さないポリフェノール化合物の一種又は二種以上、及び(B)有機溶剤を含有するものであり、本発明のレジスト下層膜材料は、(A1)成分及び(A2)成分をベース樹脂として含有する。以下、各成分について、更に詳細に説明する。
(A1)成分は、上記一般式(1)で示される繰返し単位の一種又は二種以上を含む重合体(1A)である。上記一般式(1)で示される繰返し単位は、重合体(1A)に十分な熱硬化能を与えるとともに、上層膜とのインターミキシングを防ぐ効果を付与する。また、アルカリ性過酸化水素水耐性にも一定の寄与があると考えられる。
本発明のレジスト下層膜材料における(A2)成分は、式量2,000以下の、3,4−ジヒドロキシフェニル基を有さないポリフェノール化合物である。この(A2)成分のポリフェノール化合物は、分子内にフェノール性水酸基を複数有する化合物であり、分子内に3,4−ジヒドロキシフェニル基を有さず、後述の有機溶剤(B)に溶解可能なものであれば特に限定されず、一種のみ又は二種以上を混合して用いることができる。(A2)成分のポリフェノール化合物中のフェノール性水酸基の数は3〜20個がより好ましく4〜10個がさらに好ましい。フェノール性水酸基の数が3個以上であれば、配合効果を十分に得ることができ、フェノール性水酸基の数が20個以下であれば、アンモニア含有過酸化水素水耐性を十分に得ることができる。(A2)成分のポリフェノール化合物の式量(分子量)は2,000以下であり、300〜2,000が好ましく、500〜1,500が特に好ましい。分子量が2,000を超えると、平坦化/埋込特性に劣る場合がある。一方、分子量が300以上であれば、成膜性に劣ったり、あるいは、加熱硬化時の昇華物増加により装置を汚染したりする恐れがない。
本発明のレジスト下層膜材料における(B)成分は有機溶剤である。本発明のレジスト下層膜材料において使用可能な有機溶剤(B)としては、(A1)成分の重合体、及び、(A2)成分のポリフェノール化合物を溶解できれば特に制限はなく、後述する(C)酸発生剤、(D)界面活性剤、(E)架橋剤、(F)可塑剤、及び(G)色素をも溶解できるものが良い。具体的には、特開2007−199653号公報中の(0091)〜(0092)段落に記載されている溶剤を添加することができる。中でも、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、2−ヘプタノン、シクロペンタノン、シクロヘキサノン、1−オクタノール、2−エチルヘキサノール、1−ノナノール、1−デカノール、1−ウンデカノール、エチレングリコール、1,2−プロピレングリコール、1,3−ブチレングリコール、2,4−ペンタンジオール、2−メチル−2,4−ペンタンジオール、2,5−ヘキサンジオール、2,4−ヘプタンジオール、2−エチル−1,3−ヘキサンジオール、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、トリプロピレングリコール、グリセリン、酢酸n−ノニル、モノヘキシルエーテル、エチレングリコールモノ−2−エチルヘキシルエーテル、エチレングリコールモノフェニルエーテル、エチレングリコールモノベンジルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノイソプロピルエーテル、ジエチレングリコールモノ−n−ブチルエーテル、ジエチレングリコールモノイソブチルエーテル、ジエチレングリコールモノヘキシルエーテル、ジエチレングリコールモノフェニルエーテル、ジエチレングリコールモノベンジルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジエチレングリコールブチルメチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコール−n−ブチルエーテル、トリエチレングリコールブチルメチルエーテル、テトラエチレングリコールジメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノ−n−プロピルエーテル、ジプロピレングリコールモノ−n−ブチルエーテル、トリプロピレングリコールジメチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノ−n−プロピルエーテル、トリプロピレングリコールモノ−n−ブチルエーテル、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、トリアセチン、プロピレングリコールジアセテート、ジプロピレングリコールメチル−n−プロピルエーテル、ジプロピレングリコールメチルエーテルアセテート、1,4―ブタンジオールジアセテート、1,3―ブチレングリコールジアセテート、1,6−ヘキサンジオールジアセテート、γ−ブチロラクトン、及びこれらのうち2種以上の混合物が好ましく用いられる。
本発明のレジスト下層膜材料においては、熱などによる架橋反応を更に促進させるために(C)酸発生剤を添加することができる。酸発生剤は熱分解によって酸を発生するものや、光照射によって酸を発生するものがあるが、いずれのものも添加することができる。
i.下記一般式(P1a−1)、(P1a−2)、(P1a−3)又は(P1b)のオニウム塩、
ii.下記一般式(P2)のジアゾメタン誘導体、
iii.下記一般式(P3)のグリオキシム誘導体、
iv.下記一般式(P4)のビススルホン誘導体、
v.下記一般式(P5)のN−ヒドロキシイミド化合物のスルホン酸エステル、
vi.β−ケトスルホン酸誘導体、
vii.ジスルホン誘導体、
viii.ニトロベンジルスルホネート誘導体、
ix.スルホン酸エステル誘導体
等が挙げられる。
本発明のレジスト下層膜材料には、スピンコーティングにおける塗布性を向上させるために(D)界面活性剤を添加することができる。界面活性剤としては、例えば、特開2009−269953号公報中の(0142)〜(0147)段落に記載のものを用いることができる。
本発明のレジスト下層膜材料には、硬化性を高め、上層膜とのインターミキシングを更に抑制するために、(E)架橋剤を添加することもできる。架橋剤としては、特に限定されることはなく、公知の種々の系統の架橋剤を広く用いることができる。一例として、メラミン系架橋剤、グリコールウリル系架橋剤、ベンゾグアナミン系架橋剤、ウレア系架橋剤、β−ヒドロキシアルキルアミド系架橋剤、イソシアヌレート系架橋剤、アジリジン系架橋剤、オキサゾリン系架橋剤、エポキシ系架橋剤を例示できる。
本発明のレジスト下層膜材料には、平坦化/埋め込み特性を更に向上させるために、(F)可塑剤を添加することができる。可塑剤としては、特に限定されることはなく、公知の種々の系統の可塑剤を広く用いることができる。一例として、フタル酸エステル類、アジピン酸エステル類、リン酸エステル類、トリメリット酸エステル類、クエン酸エステル類などの低分子化合物、ポリエーテル系、ポリエステル系、特開2013−253227号公報記載のポリアセタール系重合体などのポリマーを例示できる。
本発明のレジスト下層膜材料には、多層リソグラフィーのパターニングの際の解像性を更に向上させるために、(G)色素を添加することができる。色素としては、露光波長において適度な吸収を有する化合物であれば特に限定されることはなく、公知の種々の化合物を広く用いることができる。一例として、ベンゼン類、ナフタレン類、アントラセン類、フェナントレン類、ピレン類、イソシアヌル酸類、トリアジン類を例示できる。
本発明では、被加工基板上に上述のレジスト下層膜材料をコーティングし、前記レジスト下層膜材料を100℃以上300℃以下の温度で、10秒〜600秒間の範囲で熱処理することによって硬化膜を形成するレジスト下層膜形成方法を提供する。
本発明では、上述のレジスト下層膜材料を用いたパターン形成方法を提供する。本発明のパターン形成方法は、ケイ素含有2層レジストプロセス、ケイ素含有中間層膜を用いた3層レジストプロセス、ケイ素含有中間層膜及び有機反射防止膜を用いた4層レジストプロセス、又はケイ素を含まない2層レジストプロセスといった多層レジストプロセスに好適に用いられる。
(I−1)被加工基板上に、上述のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(I−2)該レジスト下層膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(I−3)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、及び
(I−4)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有するパターン形成方法を提供する。
(II−1)被加工基板上に、上述のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(II−2)該レジスト下層膜上に、レジスト中間膜を形成する工程、
(II−3)該レジスト中間膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(II−4)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、
(II−5)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記レジスト中間膜にパターンを転写する工程、及び
(II−6)該パターンが転写されたレジスト中間膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有するパターン形成方法を提供する。
(III−1)被加工基板上に、上述のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(III−2)該レジスト下層膜上に、ケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスク中間膜を形成する工程、
(III−3)該無機ハードマスク中間膜上に、有機反射防止膜を形成する工程、
(III−4)該有機反射防止膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(III−5)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、
(III−6)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記有機反射防止膜及び前記無機ハードマスク中間膜にパターンを転写する工程、及び
(III−7)該パターンが転写された無機ハードマスク中間膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有するパターン形成方法を提供する。
また、露光光としては、波長300nm以下の高エネルギー線、具体的には248nm、193nm、157nmのエキシマレーザー、3〜20nmの軟X線、電子ビーム、X線等を挙げることができる。
3層レジストプロセスの場合、図1(A)に示したように、基板1の上に積層された被加工層2上にレジスト下層膜3を形成した後、レジスト中間膜4を形成し、その上にレジスト上層膜5を形成する。
なお、分子量の測定は、具体的には下記の方法により行った。テトラヒドロフランを溶離液としたゲルパーミエーションクロマトグラフィー(GPC)によるポリスチレン換算の重量平均分子量(Mw)、数平均分子量(Mn)を求め、分散度(Mw/Mn)を求めた。
プロピレングリコールモノメチルエーテルアセテート(PGMEA)23.3gを窒素雰囲気下80℃にて加熱撹拌した。これに、メタクリル酸グリシジル25.8g、アクリル酸(2−フェノキシエチル)12.0g、アクリル酸トリシクロデカニル12.9g、PGMEA46.7gの混合物と、ジメチル2,2−アゾビス(2−メチルプロピオネート)4.45gとPGMEA46.7gの混合物を、同時かつ別々に、2時間かけて添加した。さらに16時間加熱撹拌後、60℃に冷却し、ヘプタン200gを添加後、室温に冷却し、2時間静置した。上層を分離除去、PGMEA100gを添加後、ヘプタンを減圧留去し、目的とする、下記に示す重合体(A1−1)のPGMEA溶液を得た。
使用する原料単量体の種類及びモル比率を、各重合体の構造に合わせて変更した以外は、[合成例1]に準じた方法により、下記に示す重合体(A1−2)〜(A1−5)を得た。
重合体(A1−1)〜(A1−6)、ポリフェノール化合物(A2−1)〜(A2−6)、酸発生剤(C1)、架橋剤(E1)、可塑剤(F1)、色素(G1)を、界面活性剤としてPF−6320(ОMNОVA製を自社精製)0.05質量%を含む溶剤中に表2に示す割合で溶解させ、0.1μmのフッ素樹脂製のフィルターで濾過することによってレジスト下層膜材料(UL−1〜7、比較UL−1〜4)を調製した。なお、表2中、PGMEAはプロピレングリコールモノメチルエーテルアセテートを示す。
上記で調製したレジスト下層膜材料(UL−1〜7、比較UL−1〜4)をシリコン基板上に塗布し、下記表3に記載の温度にて60秒焼成した後、膜厚を測定し、その上にPGMEA溶剤をディスペンスし、30秒間放置しスピンドライ、100℃で60秒間ベークしてPGMEA溶媒を蒸発させ、膜厚を再度測定しPGMEA処理前後の膜厚差を求めることにより溶剤耐性を評価した。また、J.A.ウーラム社の入射角度可変の分光エリプソメーター(VASE)にて求めた成膜後のレジスト下層膜の波長193nmにおける光学定数(屈折率n,消衰係数k)を下記表3に併せて示す。
前記の通り形成されたレジスト下層膜、及び下記のように形成したレジスト上層膜について、N2/H2系ガスによるドライエッチング試験を実施した。
チャンバー圧力 2.7Pa
RFパワー 1,000W
N2ガス流量 500mL/min
H2ガス流量 30mL/min
時間 20sec
前記のレジスト下層膜材料をそれぞれ、密集ホールパターン(ホール直径0.16μm、ホール深さ0.50μm、隣り合う二つのホールの中心間の距離0.32μm)を有するSiO2ウエハー基板上に塗布し、表6に記載の温度にて60秒焼成し、レジスト下層膜を形成した。使用した基板は図2(G)(俯瞰図)及び(H)(断面図)に示すような密集ホールパターンを有する下地基板7(SiO2ウエハー基板)である。得られた各ウエハー基板の断面形状を、走査型電子顕微鏡(SEM)を用いて観察し、ホール内部にボイド(空隙)なく、レジスト下層膜で充填されているかどうかを確認した。結果を表6に示す。埋め込み特性に劣るレジスト下層膜材料を用いた場合は、本評価において、ホール内部にボイドが発生する。埋め込み特性が良好なレジスト下層膜材料を用いた場合は、本評価において、図2(I)に示されるようにホール内部にボイドなくレジスト下層膜8が充填される。
前記のレジスト下層膜材料をそれぞれ、巨大孤立トレンチパターン(図3(J)、トレンチ幅10μm、トレンチ深さ0.1μm)を有する下地基板9(SiO2ウエハー基板)上に塗布し、表7に記載の条件で焼成した後、トレンチ部分と非トレンチ部分のレジスト下層膜10の膜厚の差(図3(K)中のdelta 10)を、原子間力顕微鏡(AFM)を用いて観察した。結果を表7に示す。本評価において、膜厚の差が小さいほど、平坦化特性が良好であるといえる。
3cm角に切断したシリコンウエハー上に、表8に記載の焼成条件に従い、前記レジスト下層膜材料を膜厚約100nmとなるように成膜した。このウエハー片を、アンモニア0.5質量%を含む1.0質量%過酸化水素水に、70℃で5分間浸漬、続いて、脱イオン水でリンス後に、目視によりウエハーからのレジスト下層膜剥離の有無を検査した。レジスト下層膜の一部又は全部が剥がれ、シリコンウエハー表面が露出した場合は、試験に供したレジスト下層膜はアルカリ性過酸化水素水耐性が不十分と判断される。結果を表8に示す。
前記レジスト下層膜材料(UL−1〜7及び比較UL−1−4)をそれぞれ、Siウエハー基板上に塗布し、表9に記載の条件で焼成することにより、レジスト下層膜を形成した。その上に前記レジスト上層膜材料(PR−1)を塗布し、120℃で60秒間ベークすることにより膜厚約200nmのフォトレジスト膜を形成した。
チャンバー圧力 2.7Pa
RFパワー 1,000W
N2ガス流量 500mL/min
H2ガス流量 30mL/min
時間 40sec
3…レジスト下層膜、 3a…レジスト下層膜パターン、 4…レジスト中間膜、
4a…レジスト中間膜パターン、 5…レジスト上層膜、
5a…レジストパターン、 6…所用部分、
7…密集ホールパターンを有する下地基板、 8…レジスト下層膜、
9…巨大孤立トレンチパターンを有する下地基板、 10…レジスト下層膜、
delta 10…トレンチ部分と非トレンチ部分のレジスト下層膜の膜厚の差。
Claims (20)
- 前記(A2)成分が、下記一般式(2A)で示される化合物又は下記一般式(3A)で示される化合物のいずれか一方もしくは両方を含むものであることを特徴とする請求項1に記載のレジスト下層膜材料。
- 前記重合体(1A)の重量平均分子量が、1,000〜20,000であることを特徴とする請求項1から請求項4のいずれか一項に記載のレジスト下層膜材料。
- 前記レジスト下層膜材料が、更に、(C)酸発生剤、(D)界面活性剤、(E)架橋剤、(F)可塑剤、及び(G)色素のうち一種以上を含有するものであることを特徴とする請求項1から請求項5のいずれか一項に記載のレジスト下層膜材料。
- 前記レジスト下層膜材料が、アンモニア含有過酸化水素水に耐性を示すレジスト下層膜を与えるものであることを特徴とする請求項1から請求項6のいずれか一項に記載のレジスト下層膜材料。
- 前記レジスト下層膜が、前記レジスト下層膜を成膜したシリコン基板を、アンモニア0.5質量%を含む1.0質量%過酸化水素水に70℃で5分間浸漬した際に、前記レジスト下層膜の剥がれが観察されないものであることを特徴とする請求項7に記載のレジスト下層膜材料。
- 被加工基板にパターンを形成する方法であって、
(I−1)被加工基板上に、請求項1から請求項8のいずれか一項に記載のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(I−2)該レジスト下層膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(I−3)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、及び
(I−4)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有することを特徴とするパターン形成方法。 - 被加工基板にパターンを形成する方法であって、
(II−1)被加工基板上に、請求項1から請求項8のいずれか一項に記載のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(II−2)該レジスト下層膜上に、レジスト中間膜を形成する工程、
(II−3)該レジスト中間膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(II−4)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、
(II−5)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記レジスト中間膜にパターンを転写する工程、及び
(II−6)該パターンが転写されたレジスト中間膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有することを特徴とするパターン形成方法。 - 被加工基板にパターンを形成する方法であって、
(III−1)被加工基板上に、請求項1から請求項8のいずれか一項に記載のレジスト下層膜材料を用いてレジスト下層膜を形成する工程、
(III−2)該レジスト下層膜上に、ケイ素酸化膜、ケイ素窒化膜、及びケイ素酸化窒化膜から選ばれる無機ハードマスク中間膜を形成する工程、
(III−3)該無機ハードマスク中間膜上に、有機反射防止膜を形成する工程、
(III−4)該有機反射防止膜上に、フォトレジスト材料を用いてレジスト上層膜を形成する工程、
(III−5)該レジスト上層膜をパターン露光した後、現像液で現像して、前記レジスト上層膜にパターンを形成する工程、
(III−6)該パターンが形成されたレジスト上層膜をマスクにして、ドライエッチングで前記有機反射防止膜及び前記無機ハードマスク中間膜にパターンを転写する工程、及び
(III−7)該パターンが転写された無機ハードマスク中間膜をマスクにして、ドライエッチングで前記レジスト下層膜にパターンを転写する工程、
を有することを特徴とするパターン形成方法。 - 前記(II−6)工程の後、更に、アルカリ性過酸化水素水を用いたウェットエッチングにより、前記パターンが転写されたレジスト中間膜を除去する工程を有することを特徴とする請求項10に記載のパターン形成方法。
- 前記(I−4)工程、前記(II−6)工程、又は前記(III−7)工程の後、更に、前記パターンが転写されたレジスト下層膜をマスクにして、アルカリ性過酸化水素水を用いたウェットエッチングにより、前記被加工基板にパターンを転写する工程を有することを特徴とする請求項9から請求項11のいずれか一項に記載のパターン形成方法。
- 前記(I−4)工程、前記(II−6)工程、又は前記(III−7)工程の後、更に、前記パターンが転写されたレジスト下層膜をマスクにしてイオン打込みを行うことにより、前記被加工基板をパターン加工する工程を有することを特徴とする請求項9から請求項11のいずれか一項に記載のパターン形成方法。
- 前記イオン打込みによって被加工基板をパターン加工する工程の後、更に、アルカリ性過酸化水素水を用いたウェットエッチングで、前記パターンが転写されたレジスト中間膜を除去する工程を有することを特徴とする請求項14に記載のパターン形成方法。
- 前記レジスト下層膜材料として、ドライエッチング速度が、前記レジスト上層膜のドライエッチング速度より高いものを用いることを特徴とする請求項9から請求項15のいずれか一項に記載のパターン形成方法。
- 前記レジスト下層膜を、前記被加工基板上に前記レジスト下層膜材料を塗布し、100℃以上300℃以下の温度で、10〜600秒間熱処理することによって形成することを特徴とする請求項9から請求項16のいずれか一項に記載のパターン形成方法。
- 前記被加工基板として、高さ30nm以上の構造体又は段差を有する基板を用いることを特徴とする請求項9から請求項17のいずれか一項に記載のパターン形成方法。
- 被加工基板上に請求項1から請求項8のいずれか一項に記載のレジスト下層膜材料をコーティングし、前記レジスト下層膜材料を100℃以上300℃以下の温度で、10秒〜600秒間の範囲で熱処理することによって硬化膜を形成することを特徴とするレジスト下層膜形成方法。
- 前記被加工基板として、高さ30nm以上の構造体又は段差を有する基板を用いることを特徴とする請求項19に記載のレジスト下層膜形成方法。
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KR20180111586A (ko) | 2018-10-11 |
CN108693705B (zh) | 2021-07-13 |
JP6718406B2 (ja) | 2020-07-08 |
TW201839072A (zh) | 2018-11-01 |
CN108693705A (zh) | 2018-10-23 |
US10241412B2 (en) | 2019-03-26 |
TWI660013B (zh) | 2019-05-21 |
EP3382454A1 (en) | 2018-10-03 |
US20180284615A1 (en) | 2018-10-04 |
EP3382454B1 (en) | 2019-07-24 |
KR102054065B1 (ko) | 2019-12-09 |
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