JP2018163956A - 窒化物半導体層の成長方法 - Google Patents
窒化物半導体層の成長方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 38
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000008859 change Effects 0.000 claims abstract description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 106
- 229910002601 GaN Inorganic materials 0.000 description 105
- 239000007789 gas Substances 0.000 description 61
- 239000013078 crystal Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Abstract
Description
図11は、上記実施形態の一変形例に係る温度変化及びガスタイミングを示すチャートである。図11において、縦軸は温度を、横軸は時間をそれぞれ示す。上記実施形態では、図3に示したようにAlN層3を成長する期間Bと期間Cとが間隔を空けずに連続しているが、本変形例では、期間Bののち期間Cの開始までの期間Gにおいて、Ga原料及びAl原料の供給を停止した状態で、NH3ガスの流量及び成長温度を期間Bから維持する。このように、期間Bと期間Cとが連続していない場合であっても、上記実施形態と同様の作用効果を奏することができる。
Claims (6)
- 窒化物半導体層の成長方法であって、
第1の成長温度及び第1のNH3流量にて基板上にAlN層を成長する工程と、
前記AlN層上にGaN層を成長する工程と、を含み、
前記GaN層を成長する工程では、前記GaN層の成長開始時点を含む第1期間において、前記第1の成長温度から前記第1の成長温度よりも低い第2の成長温度への変更、及び、前記第1のNH3流量から前記第1のNH3流量とは異なる第2のNH3流量への変更のうち少なくとも一方を行い、前記第1期間の後の第2期間において、前記第2の成長温度及び前記第2のNH3流量にて前記GaN層を成長する、窒化物半導体層の成長方法。 - 前記第1期間において、前記第1の成長温度から前記第2の成長温度への変更、及び、前記第1のNH3流量から前記第2のNH3流量への変更の双方を行う、請求項1に記載の窒化物半導体層の成長方法。
- 前記AlN層を成長する工程では、前記AlN層を島状に成長する、請求項1または2に記載の窒化物半導体層の成長方法。
- 前記AlN層を成長したのち第1期間の開始までの期間において、Ga原料及びAl原料の供給を停止した状態で、前記第1のNH3流量及び前記第1の成長温度を維持する、請求項1〜3のいずれか一項に記載の窒化物半導体層の成長方法。
- 前記第2のNH3流量は前記第1のNH3流量よりも大きい、請求項1〜4のいずれか一項に記載の窒化物半導体層の成長方法。
- 前記第1の成長温度と前記第2の成長温度との差が少なくとも20℃である、請求項1〜5のいずれか一項に記載の窒化物半導体層の成長方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176804A (ja) * | 1999-12-14 | 2001-06-29 | Inst Of Physical & Chemical Res | 半導体層の形成方法 |
JP2003059835A (ja) * | 2001-08-13 | 2003-02-28 | Sony Corp | 窒化物半導体の成長方法 |
JP2008251966A (ja) * | 2007-03-30 | 2008-10-16 | Fujitsu Ltd | 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法 |
JP2012039150A (ja) * | 2011-11-07 | 2012-02-23 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体を成長する方法 |
JP2013004924A (ja) * | 2011-06-21 | 2013-01-07 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2013175696A (ja) * | 2012-01-25 | 2013-09-05 | Hitachi Cable Ltd | 窒化物半導体エピタキシャルウェハ及び電界効果型窒化物トランジスタ |
JP2013187551A (ja) * | 2013-04-09 | 2013-09-19 | Toshiba Corp | 窒化物半導体層の製造方法 |
JP2014175413A (ja) * | 2013-03-07 | 2014-09-22 | Sumitomo Electric Ind Ltd | 半導体装置及びその製造方法 |
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JP3569807B2 (ja) * | 2002-01-21 | 2004-09-29 | 松下電器産業株式会社 | 窒化物半導体素子の製造方法 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176804A (ja) * | 1999-12-14 | 2001-06-29 | Inst Of Physical & Chemical Res | 半導体層の形成方法 |
JP2003059835A (ja) * | 2001-08-13 | 2003-02-28 | Sony Corp | 窒化物半導体の成長方法 |
JP2008251966A (ja) * | 2007-03-30 | 2008-10-16 | Fujitsu Ltd | 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法 |
JP2013004924A (ja) * | 2011-06-21 | 2013-01-07 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP2012039150A (ja) * | 2011-11-07 | 2012-02-23 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体を成長する方法 |
JP2013175696A (ja) * | 2012-01-25 | 2013-09-05 | Hitachi Cable Ltd | 窒化物半導体エピタキシャルウェハ及び電界効果型窒化物トランジスタ |
JP2014175413A (ja) * | 2013-03-07 | 2014-09-22 | Sumitomo Electric Ind Ltd | 半導体装置及びその製造方法 |
JP2013187551A (ja) * | 2013-04-09 | 2013-09-19 | Toshiba Corp | 窒化物半導体層の製造方法 |
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