JP2018095886A - レーザー吸収化合物 - Google Patents
レーザー吸収化合物 Download PDFInfo
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- JP2018095886A JP2018095886A JP2018011092A JP2018011092A JP2018095886A JP 2018095886 A JP2018095886 A JP 2018095886A JP 2018011092 A JP2018011092 A JP 2018011092A JP 2018011092 A JP2018011092 A JP 2018011092A JP 2018095886 A JP2018095886 A JP 2018095886A
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- 239000011247 coating layer Substances 0.000 description 1
- KLNIPFWTZXANST-UHFFFAOYSA-N cobalt(2+) dioxido(dioxo)tungsten Chemical compound [Co+2].[O-][W]([O-])(=O)=O KLNIPFWTZXANST-UHFFFAOYSA-N 0.000 description 1
- KYYSIVCCYWZZLR-UHFFFAOYSA-N cobalt(2+);dioxido(dioxo)molybdenum Chemical compound [Co+2].[O-][Mo]([O-])(=O)=O KYYSIVCCYWZZLR-UHFFFAOYSA-N 0.000 description 1
- YUJQAKUKUYVGGM-UHFFFAOYSA-N cobalt;magnesium;oxomolybdenum Chemical compound [Mg].[Co].[Mo]=O YUJQAKUKUYVGGM-UHFFFAOYSA-N 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- IKUPISAYGBGQDT-UHFFFAOYSA-N copper;dioxido(dioxo)molybdenum Chemical compound [Cu+2].[O-][Mo]([O-])(=O)=O IKUPISAYGBGQDT-UHFFFAOYSA-N 0.000 description 1
- OQFRENMCLHGPRB-UHFFFAOYSA-N copper;dioxido(dioxo)tungsten Chemical compound [Cu+2].[O-][W]([O-])(=O)=O OQFRENMCLHGPRB-UHFFFAOYSA-N 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- DKUYEPUUXLQPPX-UHFFFAOYSA-N dibismuth;molybdenum;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Mo].[Mo].[Bi+3].[Bi+3] DKUYEPUUXLQPPX-UHFFFAOYSA-N 0.000 description 1
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- SSWAPIFTNSBXIS-UHFFFAOYSA-N dioxido(dioxo)tungsten;iron(2+) Chemical compound [Fe+2].[O-][W]([O-])(=O)=O SSWAPIFTNSBXIS-UHFFFAOYSA-N 0.000 description 1
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- AAQNGTNRWPXMPB-UHFFFAOYSA-N dipotassium;dioxido(dioxo)tungsten Chemical compound [K+].[K+].[O-][W]([O-])(=O)=O AAQNGTNRWPXMPB-UHFFFAOYSA-N 0.000 description 1
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- 238000005189 flocculation Methods 0.000 description 1
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- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- AWOORJZBKBDNCP-UHFFFAOYSA-N molybdenum;oxotungsten Chemical compound [Mo].[W]=O AWOORJZBKBDNCP-UHFFFAOYSA-N 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- VGIBGUSAECPPNB-UHFFFAOYSA-L nonaaluminum;magnesium;tripotassium;1,3-dioxido-2,4,5-trioxa-1,3-disilabicyclo[1.1.1]pentane;iron(2+);oxygen(2-);fluoride;hydroxide Chemical compound [OH-].[O-2].[O-2].[O-2].[O-2].[O-2].[F-].[Mg+2].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[K+].[K+].[K+].[Fe+2].O1[Si]2([O-])O[Si]1([O-])O2.O1[Si]2([O-])O[Si]1([O-])O2.O1[Si]2([O-])O[Si]1([O-])O2.O1[Si]2([O-])O[Si]1([O-])O2.O1[Si]2([O-])O[Si]1([O-])O2.O1[Si]2([O-])O[Si]1([O-])O2.O1[Si]2([O-])O[Si]1([O-])O2 VGIBGUSAECPPNB-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007649 pad printing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052625 palygorskite Inorganic materials 0.000 description 1
- 238000010951 particle size reduction Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910052628 phlogopite Inorganic materials 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- 239000005017 polysaccharide Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
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- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 229910052903 pyrophyllite Inorganic materials 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 238000000518 rheometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052624 sepiolite Inorganic materials 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
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- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- IBPRKWGSNXMCOI-UHFFFAOYSA-N trimagnesium;disilicate;hydrate Chemical compound O.[Mg+2].[Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IBPRKWGSNXMCOI-UHFFFAOYSA-N 0.000 description 1
- CWBIFDGMOSWLRQ-UHFFFAOYSA-N trimagnesium;hydroxy(trioxido)silane;hydrate Chemical compound O.[Mg+2].[Mg+2].[Mg+2].O[Si]([O-])([O-])[O-].O[Si]([O-])([O-])[O-] CWBIFDGMOSWLRQ-UHFFFAOYSA-N 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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- 150000003682 vanadium compounds Chemical class 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Laser Beam Processing (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
Description
マーキング組成物
マーキング組成物の組成と典型的な重量パーセンテージの範囲
ビヒクル
ガラスフリット又はフリット前駆体
樹脂結合剤
レーザー吸収剤
酸化モリブデン-タングステン混合金属複合体
することで得られる。これはマーキング組成物のより長い貯蔵期限を与え、アグロメレーション(agglomeration)、沈殿、凝集、フロキュレーション(flocculation)等を減少させる。
ZnCO3+MoO3→ZnMoO4+CO2
2NaOH+MoO3→Na2MoO4+H2O
CaCO3+MoO3→CaMoO4+CO2
SrCO3+MoO3→SrMoO4+CO2
分散剤/界面活性剤
ケイ酸塩鉱物
追加化合物
基材の種類別のマーキング組成物
方法
塗布
結合
ユニバーサルレーザーマーキング用の35ワットCO2レーザーの典型的な条件は、毎秒約5から100インチの速度で総出力の約2%から約100%である。殆どのコーティングについて、毎秒約3から100インチの速度で、総出力の約2%から約35%の出力が使用される。10ワットのファイバーレーザーは毎秒約3から100インチの速度で使用でき、出力は約1から10ワットをとりえる。用語「速度」は、本願ではレーザーを受ける表面を横断するときのマーキングヘッドの速度をいう。マーキングの条件はレーザーごとに異なり、マーキングが特定のレーザーに限定されることはない。高い又は低いワットのレーザーへの変更はマーキングパラメータを変え、そのためより低い出力%、より早い速度でマークしうるし、またその逆にもなりえる。
余剰の除去
マークされた基材
本発明の主題による一連のマーキング組成物が種々の組成で作られる。種々の焼成された湿式反応モリブデンベースの複合体無機顔料が以下の方法を使って最終製品に調製された。モリブデン顔料の焼成後、粒子の大きさは高速ボールミルを使って小さくされた。粒子の大きさが小さくされたモリブデン顔料と添加剤は高速ボールミルを使って水ベースのスラリーとされた。この工程の後、水ベースのモリブデン顔料スラリーの懸濁液はエタノールにより希釈され金属札基材上へ重力送り銃を使って1ミルの平均厚みでスプレーされた。レーザーマーキングモリブデン材料でカバーされた金属札は乾燥され、マーキング用のファイバーとCO2レーザー中に置かれた。レーザーに設定した種々の速度と出力を使って、この札はファイバーとCO2レーザーによりマークされた。結合されていない材料は洗い流され、レーザーは結合強さとコントラストについて評価を受けた。
Claims (20)
- レーザーで照射を受けて基材上にマークを形成するためのマーキング組成物であって、当該マーキング組成物は
ビヒクル(vehicle)と、
モリブデン金属複合体、タングステン金属複合体、及びそれらの組み合わせからなる群から選択される金属複合体を含有するレーザー吸収剤と、モリブデン金属とタングステン金属からなる粉末合金を含有する添加剤と、を含むものである、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤はモリブデン酸金属複合体を含むものである、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤は0.1ミクロンから55ミクロンの平均粒子サイズ(D50)をもつ粒子である、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤はタングステン酸金属複合体を含むものである、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤はタングステン混合金属複合体を含むものである、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤はMoO3と、WO3、Li2O、Na2O,K2O及びそれらの組み合わせからなる群から選択されるいずれか一つを含む共晶組成物を含むものである、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤はWO3と、MoO3、Li2O、Na2O、K2O及びそれらの組み合わせからなる群から選択されるいずれか一つを含む共晶組成物を含むものである、マーキング組成物。 - 請求項1のマーキング組成物であって、
前記レーザー吸収剤は酸化タングステンとSrO、Nb2O5とそれらの組み合わせからなる群から選択されるいずれか一つを含むものである、マーキング組成物。 - 基材にマークを形成する方法であって、マーキング組成物を基材に塗布する工程で、前記マーキング組成物は、ビヒクルとモリブデン金属複合体、タングステン金属複合体及びそれらの組み合わせからなる群から選択される金属複合体を含むレーザー吸収剤と、モリブデン金属とタングステン金属からなる粉末合金を含有する添加剤と、を含むものである、工程、
前記マーキング組成物をレーザーに暴露し、マーキング組成物の少なくとも一部を温度上昇させ、基材に付着させ、基材とのコントラストを与える輝度、色、及び/または不透明度をもつマークを基材に形成する工程、
を含む、方法。 - 請求項9の方法であって、
さらに基材からマーキング組成物の付着していない部分を除去する工程を含む、方法。 - 請求項9の方法であって、
前記レーザー吸収剤はモリブデン酸金属複合体を含むものである、方法。 - 請求項9の方法であって、
前記レーザー吸収剤はモリブデン混合金属複合体を含むものである、方法。 - 請求項9の方法であって、
前記レーザー吸収剤はタングステン酸金属複合体を含有するものである、方法。 - 請求項9の方法であって、
前記レーザー吸収剤はタングステン混合金属複合体を含むものである、方法。 - 請求項9の方法であって、
前記レーザー吸収剤はMoO3と、WO3、Li2O、Na2O,K2O及びそれらの組み合わせからなる群から選択されるいずれか一つを含む共晶組成物を含むものである、方法。 - 請求項9の方法であって、
前記レーザー吸収剤はWO3と、Li2O、Na2O、K2O及びそれらの組み合わせからなる群から選択されるいずれか一つを含む共晶組成物を含むものである、方法。 - 請求項9の方法であって、
前記レーザー吸収剤は酸化タングステンとSrO、Nb2O5とそれらの組み合わせからなる群から選択されるいずれか一つを含むものである、方法。 - マークを有する基材であって、これは基材に配置されたマーキング組成物をレーザー照射することにより形成されるものであり、当該マーキング組成物は
ビヒクル(vehicle)と
モリブデン金属複合体、タングステン金属複合体、及びそれらの組み合わせからなる群から選択される金属複合体を含有するレーザー吸収剤と、モリブデン金属とタングステン金属からなる粉末合金を含有する添加剤と、
を含むものである、マークを有する基材。 - 請求項18のマークを有する基材であって、
前記レーザー吸収剤はモリブデン酸金属複合体を含むものである、マークを有する基材。 - 請求項18のマークを有する基材であって、
前記レーザー吸収剤がモリブデン混合金属複合体を含むものである、マークを有する基材。
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