JP2018093082A5 - - Google Patents

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Publication number
JP2018093082A5
JP2018093082A5 JP2016235981A JP2016235981A JP2018093082A5 JP 2018093082 A5 JP2018093082 A5 JP 2018093082A5 JP 2016235981 A JP2016235981 A JP 2016235981A JP 2016235981 A JP2016235981 A JP 2016235981A JP 2018093082 A5 JP2018093082 A5 JP 2018093082A5
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Japan
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transistor
channel length
dstr
cotr
reliability
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JP2016235981A
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Japanese (ja)
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JP2018093082A (ja
JP6706570B2 (ja
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Priority to JP2016235981A priority Critical patent/JP6706570B2/ja
Priority claimed from JP2016235981A external-priority patent/JP6706570B2/ja
Priority to CN201711213053.1A priority patent/CN108172583A/zh
Priority to US15/830,503 priority patent/US10811445B2/en
Publication of JP2018093082A publication Critical patent/JP2018093082A/ja
Publication of JP2018093082A5 publication Critical patent/JP2018093082A5/ja
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JP2016235981A 2016-12-05 2016-12-05 半導体装置、半導体装置の製造方法および表示装置 Active JP6706570B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016235981A JP6706570B2 (ja) 2016-12-05 2016-12-05 半導体装置、半導体装置の製造方法および表示装置
CN201711213053.1A CN108172583A (zh) 2016-12-05 2017-11-27 半导体装置、半导体装置的制造方法和显示装置
US15/830,503 US10811445B2 (en) 2016-12-05 2017-12-04 Semiconductor device, method of manufacturing semiconductor device, and display unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016235981A JP6706570B2 (ja) 2016-12-05 2016-12-05 半導体装置、半導体装置の製造方法および表示装置

Publications (3)

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JP2018093082A JP2018093082A (ja) 2018-06-14
JP2018093082A5 true JP2018093082A5 (enExample) 2019-05-23
JP6706570B2 JP6706570B2 (ja) 2020-06-10

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JP2016235981A Active JP6706570B2 (ja) 2016-12-05 2016-12-05 半導体装置、半導体装置の製造方法および表示装置

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US (1) US10811445B2 (enExample)
JP (1) JP6706570B2 (enExample)
CN (1) CN108172583A (enExample)

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CN110534531A (zh) * 2019-08-30 2019-12-03 京东方科技集团股份有限公司 一种驱动背板及其制备方法、显示面板
KR102662566B1 (ko) 2019-12-31 2024-04-30 엘지디스플레이 주식회사 표시 장치
KR20210104213A (ko) 2020-02-14 2021-08-25 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US11723245B2 (en) * 2020-03-06 2023-08-08 Samsung Display Co., Ltd. Display device
TWI893073B (zh) * 2020-03-20 2025-08-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US11462608B2 (en) * 2020-03-25 2022-10-04 Apple Inc. Large panel displays with reduced routing line resistance
US11257456B2 (en) 2020-06-09 2022-02-22 Wuhan China Star Optoelectronics Technology Co., Ltd Pixel driving circuit and display panel
CN111653247B (zh) * 2020-06-09 2021-06-22 武汉华星光电技术有限公司 像素驱动电路及显示面板
KR20220019880A (ko) * 2020-08-10 2022-02-18 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN115398530B (zh) 2021-01-26 2024-12-27 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、栅极驱动电路、显示基板
WO2022160088A1 (zh) * 2021-01-26 2022-08-04 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
JP2022124280A (ja) * 2021-02-15 2022-08-25 日本放送協会 薄膜トランジスタ及びその製造方法
JP7551554B2 (ja) * 2021-03-30 2024-09-17 株式会社東芝 半導体装置

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GB9907019D0 (en) * 1999-03-27 1999-05-19 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
US7446742B2 (en) * 2004-01-30 2008-11-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US9177974B2 (en) * 2009-11-09 2015-11-03 Sharp Kabushiki Kaisha Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided
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JP2015090439A (ja) * 2013-11-06 2015-05-11 ソニー株式会社 駆動回路、表示装置および電子機器
CN103715196B (zh) * 2013-12-27 2015-03-25 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
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CN105390503B (zh) * 2014-08-29 2018-12-28 乐金显示有限公司 薄膜晶体管基板及使用薄膜晶体管基板的显示装置
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JP6673731B2 (ja) * 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法
US9985082B2 (en) * 2016-07-06 2018-05-29 Lg Display Co., Ltd. Organic light emitting display device comprising multi-type thin film transistor and method of manufacturing the same

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