JP2018067408A5 - - Google Patents

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Publication number
JP2018067408A5
JP2018067408A5 JP2016204174A JP2016204174A JP2018067408A5 JP 2018067408 A5 JP2018067408 A5 JP 2018067408A5 JP 2016204174 A JP2016204174 A JP 2016204174A JP 2016204174 A JP2016204174 A JP 2016204174A JP 2018067408 A5 JP2018067408 A5 JP 2018067408A5
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JP
Japan
Prior art keywords
grid electrode
beam irradiation
grid
offset
ion beam
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JP2016204174A
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English (en)
Japanese (ja)
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JP2018067408A (ja
JP6721486B2 (ja
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Priority to JP2016204174A priority Critical patent/JP6721486B2/ja
Priority claimed from JP2016204174A external-priority patent/JP6721486B2/ja
Priority to US15/785,500 priority patent/US10204766B2/en
Publication of JP2018067408A publication Critical patent/JP2018067408A/ja
Publication of JP2018067408A5 publication Critical patent/JP2018067408A5/ja
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JP2016204174A 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置 Active JP6721486B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016204174A JP6721486B2 (ja) 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置
US15/785,500 US10204766B2 (en) 2016-10-18 2017-10-17 Ion beam irradiation apparatus and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016204174A JP6721486B2 (ja) 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2018067408A JP2018067408A (ja) 2018-04-26
JP2018067408A5 true JP2018067408A5 (cg-RX-API-DMAC7.html) 2019-12-05
JP6721486B2 JP6721486B2 (ja) 2020-07-15

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JP2016204174A Active JP6721486B2 (ja) 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置

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US (1) US10204766B2 (cg-RX-API-DMAC7.html)
JP (1) JP6721486B2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210132599A (ko) * 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2858776B2 (ja) * 1989-03-08 1999-02-17 日本原子力研究所 ビーム照射装置
US5218218A (en) * 1990-02-01 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
US5365070A (en) * 1992-04-29 1994-11-15 The Regents Of The University Of California Negative ion beam injection apparatus with magnetic shield and electron removal means
JP3509343B2 (ja) * 1995-10-30 2004-03-22 日新電機株式会社 イオン源
JP2003503819A (ja) * 1999-06-23 2003-01-28 アプライド マテリアルズ インコーポレイテッド イオンビーム発生装置
JP4443816B2 (ja) * 2002-09-06 2010-03-31 シャープ株式会社 イオンドーピング装置及びイオンドーピング装置用多孔電極
EP1943661B1 (en) * 2005-09-06 2012-02-08 Carl Zeiss SMT GmbH Charged particle inspection method and charged particle system
JP2007173069A (ja) 2005-12-22 2007-07-05 Japan Atomic Energy Agency 超低エネルギーイオン源用電極
JP2009217980A (ja) * 2008-03-07 2009-09-24 Nissin Ion Equipment Co Ltd イオン源の電圧決定方法
US8294117B2 (en) * 2009-09-18 2012-10-23 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
JP5041260B2 (ja) * 2010-06-04 2012-10-03 日新イオン機器株式会社 イオン注入装置
US8309937B2 (en) * 2010-10-05 2012-11-13 Veeco Instruments, Inc. Grid providing beamlet steering

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