JP2018056552A5 - - Google Patents
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- JP2018056552A5 JP2018056552A5 JP2017151954A JP2017151954A JP2018056552A5 JP 2018056552 A5 JP2018056552 A5 JP 2018056552A5 JP 2017151954 A JP2017151954 A JP 2017151954A JP 2017151954 A JP2017151954 A JP 2017151954A JP 2018056552 A5 JP2018056552 A5 JP 2018056552A5
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- 239000000463 material Substances 0.000 claims description 58
- 239000011159 matrix material Substances 0.000 claims description 36
- 229920000642 polymer Polymers 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 13
- 238000000149 argon plasma sintering Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000005424 photoluminescence Methods 0.000 claims 30
- 239000004065 semiconductor Substances 0.000 claims 17
- 230000005540 biological transmission Effects 0.000 claims 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 4
- 230000003287 optical Effects 0.000 claims 3
- -1 fluoride phosphor Chemical compound 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000004054 semiconductor nanocrystal Substances 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Description
低感湿性PL材料212の重量百分率を増加させてより高い実装密度の層構造を構成すると、第1のPL層21の酸素および湿気バリア特性が向上する。この結果は、無機材料のWVTRが一般的に有機ポリマー材料よりもはるかに低いことに起因する。そのため、望ましくは、第1のPL層21の全重量に対する低感湿性PL材料212の重量百分率を約50%以上(少なくとも約50%)、約60%以上(少なくとも約60%)または約70%以上(少なくとも約70%)にする。低感湿性PL材料212の実装密度をより高くするために、低感湿性PL材料212の蛍光体粒子の中程度粒径(D50)を、望ましくは、約30μm以下、約20μm以下または約10μm以下とする。
Increasing the weight percentage of the low moisture sensitive PL material 212 to form a higher packing density layer structure improves the oxygen and moisture barrier properties of the first PL layer 21. This result is due to the WVTR of inorganic materials being generally much lower than organic polymer materials. Therefore, desirably, the weight percentage of the low moisture sensitive PL material 212 relative to the total weight of the first PL layer 21 is about 50% or more (at least about 50%) , about 60% or more (at least about 60%) or about 70%. Or more (at least about 70%) . In order to further increase the packaging density of the low moisture-sensitive PL material 212, the medium particle size (D50) of the phosphor particles of the low moisture-sensitive PL material 212 is desirably about 30 μm or less , about 20 μm or less, or about 10 μm or less. And
さらに、低感湿性PL材料212および第1のポリマーマトリクス材料211のどちらも、周囲の酸素または湿気の浸透に抗するように機能してもよい。第1のポリマーマトリクス材料211は、WVTRがより低い、例えばWVTRが2mm層厚において測定された約10g/m2/日以下のポリマー材料から選択して、湿気バリア特性を向上させてもよい。第1のポリマーマトリクス材料211の例として、シリコーン材料などの樹脂材料が挙げられるが、これに限定されるものではない。
Further, both the low moisture sensitive PL material 212 and the first polymer matrix material 211 may function to resist the penetration of ambient oxygen or moisture. The first polymer matrix material 211 may be selected from polymer materials having a lower WVTR, for example, a WVTR of about 10 g / m 2 / day or less measured at 2 mm layer thickness to improve moisture barrier properties. Examples of the first polymer matrix material 211 include a resin material such as a silicone material, but are not limited thereto.
また、反射構造体30は別のバリア層として機能して、感湿性PL材料222に浸透して到達する酸素または湿気の量を低減させてもよい。反射構造体30は、第3のポリマーマトリクス材料31内に分散された光散乱粒子32を含む。良好な耐湿性バリア特性を実現するために、第3のポリマーマトリクス材料31は、望ましくは、WVTRが低いポリマー材料、例えば2mmの層厚において測定されたWVTRが約10g/m2/日以下のシリコーン材料などの樹脂材料から選択可能とする。加えて、反射構造体30の全重量に対する光散乱粒子32の重量百分率比は、少なくとも約30%である。光散乱粒子32の例として、TiO2、BN、SiO2、Al2O3または他の酸化物、窒化物、または他のセラミック材料が含まれるが、これに限定されるものではない。
The reflective structure 30 may function as another barrier layer to reduce the amount of oxygen or moisture that penetrates and reaches the moisture-sensitive PL material 222. The reflective structure 30 includes light scattering particles 32 dispersed in a third polymer matrix material 31. In order to achieve good moisture resistant barrier properties, the third polymer matrix material 31 is desirably a polymer material with a low WVTR, eg, a WVTR measured at a layer thickness of 2 mm of about 10 g / m 2 / day or less . A resin material such as a silicone material can be selected. In addition, the weight percentage ratio of the light scattering particles 32 to the total weight of the reflective structure 30 is at least about 30%. Examples of light scattering particles 32 include, but are not limited to, TiO 2 , BN, SiO 2 , Al 2 O 3 or other oxides, nitrides, or other ceramic materials.
Claims (31)
該発光半導体ダイ上に配置され、第2のフォトルミネセンス層および該第2のフォトルミネセンス層上に配置された第1のフォトルミネセンス層を含むフォトルミネセンス構造体とを含み、前記第1のフォトルミネセンス層は、第1のポリマーマトリクス材料、および該第1のポリマーマトリクス材料内に分散された第1のフォトルミネセンス材料を含み、前記第2のフォトルミネセンス層は、第2のポリマーマトリクス材料、および該第2のポリマーマトリクス材料内に分散された第2のフォトルミネセンス材料を含み、前記第1のフォトルミネセンス材料は低感湿性のフォトルミネセンス材料であり、前記第2のフォトルミネセンス材料は感湿性フォトルミネセンス材料であり、前記第1のフォトルミネセンス材料の前記第1のフォトルミネセンス層に対する重量百分率は少なくとも60%であり、前記第1のポリマーマトリクス材料の2mmの層厚で測定した水蒸気透過速度は10g/m 2 /日以下であり、さらに、
前記発光半導体ダイの少なくとも前記縁面を覆う反射構造体を含み、該反射構造体は、第3のポリマーマトリクス材料および該第3のポリマーマトリクス材料内に分散された光散乱粒子を含むことを特徴とする発光素子。 A light emitting semiconductor die including an upper surface, an edge surface, a lower surface and a set of electrodes disposed adjacent to the lower surface;
A photoluminescence structure disposed on the light emitting semiconductor die and comprising a second photoluminescence layer and a first photoluminescence layer disposed on the second photoluminescence layer; One photoluminescent layer includes a first polymer matrix material and a first photoluminescent material dispersed within the first polymer matrix material, the second photoluminescent layer comprising: And a second photoluminescent material dispersed in the second polymer matrix material, wherein the first photoluminescent material is a low moisture sensitive photoluminescent material, 2 photoluminescent materials are moisture sensitive photoluminescent material, wherein the first Fotoru of the first photoluminescent material Weight percentage relative Nesensu layer is at least 60%, the first 2mm water vapor transmission rate measured in a layer thickness of the polymer matrix material is less than 10 g / m 2 / day, further,
A reflective structure covering at least the edge surface of the light emitting semiconductor die, the reflective structure including a third polymer matrix material and light scattering particles dispersed in the third polymer matrix material; A light emitting element.
前記第2のフォトルミネセンス材料は、マンガンにより活性化されたフッ化物蛍光体材料を含むことを特徴とする請求項1に記載の発光素子。 The first photoluminescent material comprises an oxynitride phosphor material;
The light emitting device according to claim 1, wherein the second photoluminescent material includes a fluoride phosphor material activated by manganese.
該発光半導体ダイ上に配置されたフォトルミネセンス構造体とを含み、該フォトルミネセンス構造体は、第2のフォトルミネセンス層、および該第2のフォトルミネセンス層上に配置された第1のフォトルミネセンス層を含み、該第1のフォトルミネセンス層および該第2のフォトルミネセンス層はそれぞれ、前記発光半導体ダイの前記上面を覆う上部と、該上部に接続されて前記発光半導体ダイの前記縁面を覆う縁部と、該縁部から外方に延びる延長部とを含み、さらに、
該フォトルミネセンス構造体上に配置された封入構造体を含む発光素子において、
前記第1のフォトルミネセンス層は、第1のポリマーマトリクス材料、および該第1のポリマーマトリクス材料内に分散された第1のフォトルミネセンス材料を含み、前記第2のフォトルミネセンス層は、第2のポリマーマトリクス材料、および該第2のポリマーマトリクス材料内に分散された第2のフォトルミネセンス材料を含み、前記第1のフォトルミネセンス材料は低感湿性のフォトルミネセンス材料であり、前記第2のフォトルミネセンス材料は感湿性フォトルミネセンス材料であり、前記封入構造体は実質的に透明なポリマー材料を含み、
前記第1のフォトルミネセンス材料の前記第1のフォトルミネセンス層に対する重量百分率は少なくとも60%であり、前記第1のポリマーマトリクス材料の2mmの層厚で測定した水蒸気透過速度は10g/m 2 /日以下であることを特徴とする発光素子。 A light emitting semiconductor die including an upper surface, an edge surface, a lower surface and a set of electrodes disposed adjacent to the lower surface;
A photoluminescent structure disposed on the light emitting semiconductor die, the photoluminescent structure comprising: a second photoluminescent layer; and a first photoluminescent layer disposed on the second photoluminescent layer. The first photoluminescence layer and the second photoluminescence layer are respectively connected to the upper portion of the light emitting semiconductor die and to the upper portion of the light emitting semiconductor die. An edge portion that covers the edge surface, and an extension that extends outward from the edge portion, and
In a light emitting device including an encapsulating structure disposed on the photoluminescence structure,
The first photoluminescent layer includes a first polymer matrix material and a first photoluminescent material dispersed within the first polymer matrix material, the second photoluminescent layer comprising: A second polymer matrix material, and a second photoluminescent material dispersed within the second polymer matrix material, wherein the first photoluminescent material is a low moisture sensitive photoluminescent material; the second photoluminescent materials are moisture sensitive photoluminescent material, the inclusion structure seen including a substantially transparent polymeric material,
The weight percentage of the first photoluminescent material to the first photoluminescent layer is at least 60% and the water vapor transmission rate measured at a layer thickness of 2 mm of the first polymer matrix material is 10 g / m 2. / Day or less, The light emitting element characterized by the above-mentioned.
リードフレームを含むパッケージ構造体とを含み、該リードフレームは、第1の電極および第2の電極、ならびに前記リードフレーム上に配置された反射板を含み、前記第1の電極および前記第2の電極は電気接続用に部分的に露出され、前記リードフレームおよび前記反射板によって光空胴が形成され、さらに、
前記光空胴内に配置されて前記発光半導体ダイを被覆し、第2のフォトルミネセンス層および該第2のフォトルミネセンス層上に配置された第1のフォトルミネセンス層を含むフォトルミネセンス構造体を含み、前記第1のフォトルミネセンス層は、第1のポリマーマトリクス材料、および該第1のポリマーマトリクス材料内に分散された第1のフォトルミネセンス材料を含み、前記第2のフォトルミネセンス層は、第2のポリマーマトリクス材料、および該第2のポリマーマトリクス材料内に分散された第2のフォトルミネセンス材料を含み、前記第1のフォトルミネセンス材料は低感湿性のフォトルミネセンス材料であり、前記第2のフォトルミネセンス材料は感湿性フォトルミネセンス材料であり、前記第1のフォトルミネセンス材料の前記第1のフォトルミネセンス層に対する重量百分率は少なくとも60%であり、前記第1のポリマーマトリクス材料の2mmの層厚で測定した水蒸気透過速度は10g/m 2 /日以下である発光素子において、
前記発光半導体ダイは、前記パッケージ構造体の前記光空胴内に配置されて機械的に接合され、前記リードフレームの前記第1の電極および前記第2の電極に電気的に接続されることを特徴とする発光素子。 A light emitting semiconductor die;
A package structure including a lead frame, the lead frame including a first electrode and a second electrode, and a reflector disposed on the lead frame, wherein the first electrode and the second electrode The electrode is partially exposed for electrical connection, and an optical cavity is formed by the lead frame and the reflector,
Photoluminescence disposed within the optical cavity and covering the light emitting semiconductor die and including a second photoluminescence layer and a first photoluminescence layer disposed on the second photoluminescence layer A first photoluminescent layer comprising a first polymer matrix material and a first photoluminescent material dispersed within the first polymer matrix material, the structure comprising: luminescent layer, a second polymeric matrix material, and viewed including the second photoluminescent material dispersed in the second polymeric matrix in the material, the first photoluminescent material of low moisture sensitive photo A luminescent material, wherein the second photoluminescent material is a moisture sensitive photoluminescent material, and the first photoluminescent material. In the weight percentage of the first photoluminescent layer is at least 60%, the first 2mm water vapor transmission rate measured in a layer thickness of the polymer matrix material emitting element is not more than 10 g / m 2 / day,
The light emitting semiconductor die is disposed in the optical cavity of the package structure and mechanically joined to be electrically connected to the first electrode and the second electrode of the lead frame. A light emitting device characterized.
該発光半導体ダイ上に配置され、上面、縁面および下面を含んで、さらに、第1のフォトルミネセンス層、および該第1のフォトルミネセンス層上に配置された第2のフォトルミネセンス層も含むフォトルミネセンス構造体とを含み、前記第1のフォトルミネセンス層は、第1のポリマーマトリクス材料、および該第1のポリマーマトリクス材料内に分散されたより低感湿性のフォトルミネセンス材料を含み、前記第2のフォトルミネセンス層は、第2のポリマーマトリクス材料、および該第2のポリマーマトリクス材料内に分散された感湿性フォトルミネセンス材料を含み、前記第1のフォトルミネセンス材料の前記第1のフォトルミネセンス層に対する重量百分率は少なくとも60%であり、前記第1のポリマーマトリクス材料の2mmの層厚で測定した水蒸気透過速度は10g/m 2 /日以下であり、さらに、
前記発光半導体ダイの前記縁面および前記フォトルミネセンス構造体の前記縁面を囲繞して覆う反射構造体を含み、該反射構造体は、第3のポリマーマトリクス材料、および該第3のポリマーマトリクス材料内に分散された光散乱粒子を含み、さらに、
前記フォトルミネセンス構造体を覆うように配置された実質的に透明な湿気バリア層を含むことを特徴とする発光素子。 A light emitting semiconductor die including an upper surface, an edge surface, a lower surface and a set of electrodes disposed adjacent to the lower surface;
A first photoluminescence layer disposed on the light emitting semiconductor die, including an upper surface, an edge surface and a lower surface; and a second photoluminescence layer disposed on the first photoluminescence layer And wherein the first photoluminescent layer comprises a first polymer matrix material and a less moisture sensitive photoluminescent material dispersed within the first polymer matrix material. And wherein the second photoluminescent layer includes a second polymer matrix material and a moisture sensitive photoluminescent material dispersed within the second polymer matrix material, the first photoluminescent material comprising: The weight percentage with respect to the first photoluminescent layer is at least 60% and is 2 mm of the first polymer matrix material. Water vapor transmission rate measured in a layer thickness is less than 10 g / m 2 / day, further,
A reflective structure surrounding and covering the edge surface of the light emitting semiconductor die and the edge surface of the photoluminescent structure, the reflective structure comprising: a third polymer matrix material; and the third polymer matrix Including light scattering particles dispersed within the material, and
A light emitting device comprising a substantially transparent moisture barrier layer disposed to cover the photoluminescence structure.
The surface area of the first photoluminescence layer is larger than the surface area of the second photoluminescence layer, and the second photoluminescence layer is covered and encapsulated by the first photoluminescence layer. The light emitting device according to claim 30 , further comprising a lower surface and an edge surface.
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