JP2018056552A5

JP2018056552A5 -

Info

Publication number: JP2018056552A5
Application number: JP2017151954A
Authority: JP
Filing date: 2017-08-04
Publication date: 2019-03-28
Anticipated expiration: 2037-08-04

Description

低感湿性ＰＬ材料２１２の重量百分率を増加させてより高い実装密度の層構造を構成すると、第１のＰＬ層２１の酸素および湿気バリア特性が向上する。この結果は、無機材料のＷＶＴＲが一般的に有機ポリマー材料よりもはるかに低いことに起因する。そのため、望ましくは、第１のＰＬ層２１の全重量に対する低感湿性ＰＬ材料２１２の重量百分率を約５０％以上（少なくとも約５０％）、約６０％以上（少なくとも約６０％）または約７０％以上（少なくとも約７０％）にする。低感湿性ＰＬ材料２１２の実装密度をより高くするために、低感湿性ＰＬ材料２１２の蛍光体粒子の中程度粒径（Ｄ５０）を、望ましくは、約３０μｍ以下、約２０μｍ以下または約１０μｍ以下とする。
Increasing the weight percentage of the low moisture sensitive PL material 212 to form a higher packing density layer structure improves the oxygen and moisture barrier properties of the first PL layer 21. This result is due to the WVTR of inorganic materials being generally much lower than organic polymer materials. Therefore, desirably, the weight percentage of the low moisture sensitive PL material 212 relative to the total weight of the first PL layer 21 is about 50% or more (at least about 50%) , about 60% or more (at least about 60%) or about 70%. Or more (at least about 70%) . In order to further increase the packaging density of the low moisture-sensitive PL material 212, the medium particle size (D50) of the phosphor particles of the low moisture-sensitive PL material 212 is desirably about 30 μm or less , about 20 μm or less, or about 10 μm or less. And

さらに、低感湿性ＰＬ材料２１２および第１のポリマーマトリクス材料２１１のどちらも、周囲の酸素または湿気の浸透に抗するように機能してもよい。第１のポリマーマトリクス材料２１１は、ＷＶＴＲがより低い、例えばＷＶＴＲが２ｍｍ層厚において測定された約１０ｇ／ｍ^２／日以下のポリマー材料から選択して、湿気バリア特性を向上させてもよい。第１のポリマーマトリクス材料２１１の例として、シリコーン材料などの樹脂材料が挙げられるが、これに限定されるものではない。
Further, both the low moisture sensitive PL material 212 and the first polymer matrix material 211 may function to resist the penetration of ambient oxygen or moisture. The first polymer matrix material 211 may be selected from polymer materials having a lower WVTR, for example, a WVTR of about 10 g / m ² / day or less measured at 2 mm layer thickness to improve moisture barrier properties. Examples of the first polymer matrix material 211 include a resin material such as a silicone material, but are not limited thereto.

また、反射構造体３０は別のバリア層として機能して、感湿性ＰＬ材料２２２に浸透して到達する酸素または湿気の量を低減させてもよい。反射構造体３０は、第３のポリマーマトリクス材料３１内に分散された光散乱粒子３２を含む。良好な耐湿性バリア特性を実現するために、第３のポリマーマトリクス材料３１は、望ましくは、ＷＶＴＲが低いポリマー材料、例えば２ｍｍの層厚において測定されたＷＶＴＲが約１０ｇ／ｍ^２／日以下のシリコーン材料などの樹脂材料から選択可能とする。加えて、反射構造体３０の全重量に対する光散乱粒子３２の重量百分率比は、少なくとも約３０％である。光散乱粒子３２の例として、ＴｉＯ^２、ＢＮ、ＳｉＯ^２、Ａｌ_２Ｏ_３または他の酸化物、窒化物、または他のセラミック材料が含まれるが、これに限定されるものではない。
The reflective structure 30 may function as another barrier layer to reduce the amount of oxygen or moisture that penetrates and reaches the moisture-sensitive PL material 222. The reflective structure 30 includes light scattering particles 32 dispersed in a third polymer matrix material 31. In order to achieve good moisture resistant barrier properties, the third polymer matrix material 31 is desirably a polymer material with a low WVTR, eg, a WVTR measured at a layer thickness of 2 mm of about 10 g / m ² / day or less . A resin material such as a silicone material can be selected. In addition, the weight percentage ratio of the light scattering particles 32 to the total weight of the reflective structure 30 is at least about 30%. Examples of light scattering particles 32 include, but are not limited to, TiO ² , BN, SiO ² , Al ₂ O ₃ or other oxides, nitrides, or other ceramic materials.

Claims

A light emitting semiconductor die including an upper surface, an edge surface, a lower surface and a set of electrodes disposed adjacent to the lower surface;
A photoluminescence structure disposed on the light emitting semiconductor die and comprising a second photoluminescence layer and a first photoluminescence layer disposed on the second photoluminescence layer; One photoluminescent layer includes a first polymer matrix material and a first photoluminescent material dispersed within the first polymer matrix material, the second photoluminescent layer comprising: And a second photoluminescent material dispersed in the second polymer matrix material, wherein the first photoluminescent material is a low moisture sensitive photoluminescent material, 2 photoluminescent materials are moisture sensitive photoluminescent material, wherein the first Fotoru of the first photoluminescent material Weight percentage relative Nesensu layer is at least 60%, the first 2mm water vapor transmission rate measured in a layer thickness of the polymer matrix material is less than 10 g / m 2 ^/ day, further,
A reflective structure covering at least the edge surface of the light emitting semiconductor die, the reflective structure including a third polymer matrix material and light scattering particles dispersed in the third polymer matrix material; A light emitting element.

2. The light emitting device according to claim 1, wherein the medium particle diameter of the first photoluminescent material is 30 μm or less .

The light emitting device according to claim 1, wherein a weight percentage of the light scattering particles with respect to the reflective structure is at least 30%.

^2. The light emitting device according to claim 1, wherein a water vapor transmission rate measured with a layer thickness of 2 mm of the third polymer matrix material is 10 g / m ² / day or less .

The first photoluminescent material comprises an inorganic phosphor material, and the second photoluminescent material comprises a phosphor material activated by a reactive metal or semiconductor nanocrystal material. 2. The light emitting device according to 1.

The first photoluminescent material comprises an oxynitride phosphor material;
The light emitting device according to claim 1, wherein the second photoluminescent material includes a fluoride phosphor material activated by manganese.

The surface area of the first photoluminescence layer is larger than the surface area of the second photoluminescence layer, and the first photoluminescence layer further covers the reflective structure. The light emitting element of description.

The second photoluminescent layer further includes a central portion and an extension surrounding the central portion so that the second photoluminescent material is selectively within the central portion with the second photoluminescent material away from the extension. The light emitting device according to claim 1, wherein the light emitting device is included in the light emitting device.

The light emitting device according to any one of claims 1 to 8 , further comprising a moisture barrier layer disposed on the photoluminescence structure.

The light emitting device according to claim 9 , wherein the moisture barrier layer is a substantially transparent inorganic layer or a substantially transparent polymer layer.

The light emitting device according to claim 9 , wherein the moisture barrier layer covers the reflective structure.

The photoluminescent structure further includes a substantially transparent getter layer disposed between the first photoluminescent layer and the second photoluminescent layer. 9. The light emitting device according to any one of items 8 to 8 .

At least one of the first photoluminescent layer or the second photoluminescent layer further comprises a getter material dispersed within the first polymer matrix material or the second polymer matrix material. light-emitting device according to any one of claims 1 to 8, wherein the.

The reflecting structure further light-emitting device according to any one of claims 1 to 8, characterized in that it comprises a getter material dispersed in said third polymeric matrix material.

The light emitting device further includes a moisture barrier reflecting structure surrounding and covering the reflecting structure, and the moisture barrier reflecting structure has a water vapor transmission rate of 10 g / m ² / day or less measured at a layer thickness of 2 mm. light-emitting device according to any one of claims 1 to 11, characterized in that it comprises a fourth polymeric matrix material.

The moisture barrier reflecting structure further comprises a dispersed light-scattering particles in the fourth polymeric matrix in the material, wherein the weight percentage of the moisture barrier reflective structure of the light scattering particles is at least 10% The light emitting device according to claim 15 .

The light emitting device further comprises a substrate, the light emitting semiconductor die and the light emitting element according to any one of claims 1 to 16, wherein said reflecting structure is characterized by being disposed on the substrate.

A light emitting semiconductor die including an upper surface, an edge surface, a lower surface and a set of electrodes disposed adjacent to the lower surface;
A photoluminescent structure disposed on the light emitting semiconductor die, the photoluminescent structure comprising: a second photoluminescent layer; and a first photoluminescent layer disposed on the second photoluminescent layer. The first photoluminescence layer and the second photoluminescence layer are respectively connected to the upper portion of the light emitting semiconductor die and to the upper portion of the light emitting semiconductor die. An edge portion that covers the edge surface, and an extension that extends outward from the edge portion, and
In a light emitting device including an encapsulating structure disposed on the photoluminescence structure,
The first photoluminescent layer includes a first polymer matrix material and a first photoluminescent material dispersed within the first polymer matrix material, the second photoluminescent layer comprising: A second polymer matrix material, and a second photoluminescent material dispersed within the second polymer matrix material, wherein the first photoluminescent material is a low moisture sensitive photoluminescent material; the second photoluminescent materials are moisture sensitive photoluminescent material, the inclusion structure seen including a substantially transparent polymeric material,
The weight percentage of the first photoluminescent material to the first photoluminescent layer is at least 60% and the water vapor transmission rate measured at a layer thickness of 2 mm of the first polymer matrix material is 10 g / m ^2. / Day or less, The light emitting element characterized by the above-mentioned.

The light emitting device according to claim 18 , wherein the extension of the second photoluminescence layer includes an edge surface covered and encapsulated by the first photoluminescence layer.

The photoluminescent structure further includes a third photoluminescent layer, the third photoluminescent layer being a fifth polymer matrix material and a third polymer dispersed within the fifth polymer matrix material. Wherein the third photoluminescent material is different from the second photoluminescent material, and the second photoluminescent layer includes the first photoluminescent layer and the first photoluminescent layer. The light-emitting element according to claim 18 , wherein the light-emitting element is disposed between the three photoluminescence layers.

21. The light emitting device according to claim 20 , wherein the extension of the second photoluminescence layer includes an edge surface covered and encapsulated by the first photoluminescence layer.

The light-emitting element according to claim 18 , wherein the medium particle diameter of the first photoluminescent material is 30 μm or less .

2mm water vapor transmission rate measured in a layer thickness of the substantially transparent polymeric material contained in the inclusion structure, light emission of claim 18, characterized in that at most 10 g / m 2 ^/ day element.

The light emitting device according to any one of claims 18 to 23 , wherein the light emitting device further includes a substrate, and the light emitting semiconductor die and the photoluminescence structure are disposed on the substrate.

A light emitting semiconductor die;
A package structure including a lead frame, the lead frame including a first electrode and a second electrode, and a reflector disposed on the lead frame, wherein the first electrode and the second electrode The electrode is partially exposed for electrical connection, and an optical cavity is formed by the lead frame and the reflector,
Photoluminescence disposed within the optical cavity and covering the light emitting semiconductor die and including a second photoluminescence layer and a first photoluminescence layer disposed on the second photoluminescence layer A first photoluminescent layer comprising a first polymer matrix material and a first photoluminescent material dispersed within the first polymer matrix material, the structure comprising: luminescent layer, a second polymeric matrix material, and viewed including the second photoluminescent material dispersed in the second polymeric matrix in the material, the first photoluminescent material of low moisture sensitive photo A luminescent material, wherein the second photoluminescent material is a moisture sensitive photoluminescent material, and the first photoluminescent material. In the weight percentage of the first photoluminescent layer is at least 60%, the first 2mm water vapor transmission rate measured in a layer thickness of the polymer matrix material emitting element is not more than 10 g / m 2 ^/ day,
The light emitting semiconductor die is disposed in the optical cavity of the package structure and mechanically joined to be electrically connected to the first electrode and the second electrode of the lead frame. A light emitting device characterized.

26. The light emitting device according to claim 25 , wherein the medium particle size of the first photoluminescent material is 30 [mu] m or less .

The package structure further includes a substantially transparent polymer material disposed between the light emitting semiconductor die and the photoluminescent structure to form a spacer, whereby the photoluminescent structure is 26. The light emitting device of claim 25 , wherein the light emitting device is not in direct contact with the light emitting semiconductor die.

The light emitting device of claim 25 , further comprising a substantially transparent moisture barrier layer disposed on the photoluminescent structure.

The photoluminescence structure or at least one of the packaging structure further light-emitting device according to any one of claims 25 to 28, characterized in that it comprises a getter material.

A light emitting semiconductor die including an upper surface, an edge surface, a lower surface and a set of electrodes disposed adjacent to the lower surface;
A first photoluminescence layer disposed on the light emitting semiconductor die, including an upper surface, an edge surface and a lower surface; and a second photoluminescence layer disposed on the first photoluminescence layer And wherein the first photoluminescent layer comprises a first polymer matrix material and a less moisture sensitive photoluminescent material dispersed within the first polymer matrix material. And wherein the second photoluminescent layer includes a second polymer matrix material and a moisture sensitive photoluminescent material dispersed within the second polymer matrix material, the first photoluminescent material comprising: The weight percentage with respect to the first photoluminescent layer is at least 60% and is 2 mm of the first polymer matrix material. Water vapor transmission rate measured in a layer thickness is less than 10 g / ^{m 2} / day, further,
A reflective structure surrounding and covering the edge surface of the light emitting semiconductor die and the edge surface of the photoluminescent structure, the reflective structure comprising: a third polymer matrix material; and the third polymer matrix Including light scattering particles dispersed within the material, and
A light emitting device comprising a substantially transparent moisture barrier layer disposed to cover the photoluminescence structure.

The surface area of the first photoluminescence layer is larger than the surface area of the second photoluminescence layer, and the second photoluminescence layer is covered and encapsulated by the first photoluminescence layer. The light emitting device according to claim 30 , further comprising a lower surface and an edge surface.