JP2006351808A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2006351808A
JP2006351808A JP2005175598A JP2005175598A JP2006351808A JP 2006351808 A JP2006351808 A JP 2006351808A JP 2005175598 A JP2005175598 A JP 2005175598A JP 2005175598 A JP2005175598 A JP 2005175598A JP 2006351808 A JP2006351808 A JP 2006351808A
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light
reflective layer
light emitting
emitting element
element chip
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Hideyoshi Kimura
秀吉 木村
Masaru Sugimoto
勝 杉本
Ryoji Yokoya
良二 横谷
Takashi Fujino
崇史 藤野
Takuma Hashimoto
拓磨 橋本
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device coping with both of a high reflection factor and the suppression of aged deterioration of the reflection factor. <P>SOLUTION: A receiving recess 11 is formed on a mounting substrate or a package 1, and a light emitting element chip 2 consisting of a light emitting diode is arranged on the bottom surface of the receiving recess 11. The inside surface of the receiving recess 11 is provided with a second reflection layer 4 consisting of an optical multi-layer film obtained by laminating SiO<SB>2</SB>on TiO<SB>2</SB>, and laminated on a first reflection layer 3 consisting of aluminum, in order to reflect out-going light from the light emitting element chip 2. The reflection factor can be secured by the first reflection film 3 since the first reflection layer 3 is protected by the second reflection layer 4, while the first reflection layer 3 can be protected by covering the first reflection layer 3 by the second reflection layer 4. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、配光を制御する反射面を備えた実装基板に発光素子チップを取り付けた発光装置に関するものである。   The present invention relates to a light emitting device in which a light emitting element chip is attached to a mounting substrate having a reflective surface for controlling light distribution.

近年、発光ダイオードや有機ＥＬのような発光素子チップにおいて白色系の発光色を得ることが可能になり、また取り出せる光束が大きくなってきたことから、この種の発光素子チップを照明や表示のための光源に用いることが考えられている。また、この種の発光素子チップは、小型かつ低電圧で駆動することができ、しかも長寿命であるという利点も有している。   In recent years, it has become possible to obtain a white emission color in a light-emitting element chip such as a light-emitting diode or an organic EL, and since the luminous flux that can be extracted has increased, this type of light-emitting element chip is used for illumination and display. It is considered to be used as a light source. In addition, this type of light-emitting element chip has an advantage that it can be driven with a small size and a low voltage and has a long life.

発光ダイオードのベアチップは、０．３〜１ｍｍ角の微小なチップであるから、機械的強度を保ち、取り扱いを容易にし、さらには耐湿性を確保し、光の取出効率を高めるために、一般にはパッケージに封止される。パッケージとしては、いわゆる砲弾型に形成したパッケージや、リードフレームに実装した発光ダイオードチップを封止した表面実装用のパッケージが知られている。   Since the bare chip of a light emitting diode is a small chip of 0.3 to 1 mm square, in order to maintain mechanical strength, facilitate handling, further ensure moisture resistance, and increase light extraction efficiency, in general, Sealed in a package. As the package, a so-called shell-shaped package and a surface-mount package in which a light-emitting diode chip mounted on a lead frame is sealed are known.

ところで、この種の発光素子チップは、動作温度が上昇すると発光効率が低下するものであるから、照明や表示に用いるときには、放熱効率を向上させる構成が要求される。その一方で、光の取出効率を高めるには、目的とする方向に光を取り出せるように配光を制御することが必要である。そのため、パッケージ内に発光素子チップとともに封止されている金属板（リードフレームなど）を利用し、金属板を適宜の形状に成形することにより反射器を形成して配光を制御することが考えられている。   By the way, since this kind of light emitting element chip | tip will reduce luminous efficiency when operating temperature rises, when using for illumination or a display, the structure which improves heat dissipation efficiency is requested | required. On the other hand, in order to increase the light extraction efficiency, it is necessary to control the light distribution so that light can be extracted in the target direction. Therefore, it is considered to use a metal plate (such as a lead frame) sealed with a light emitting element chip in the package, and to form a reflector by controlling the light distribution by forming the metal plate into an appropriate shape. It has been.

上述したパッケージのうち砲弾形のパッケージやリードフレームを用いた表面実装用のパッケージでは、回路基板に接続するための２本のリード線がパッケージから引き出されていることが多く、回路基板への放熱は２本のリード線を通してしか行われないものであるから、放熱効率が低いという問題を有している。   Of the above-mentioned packages, in the case of a shell-shaped package or a surface mounting package using a lead frame, two lead wires for connection to the circuit board are often drawn from the package, and heat dissipation to the circuit board Has a problem that heat dissipation efficiency is low because it is performed only through two lead wires.

一方、表面実装用のパッケージには、セラミックスあるいは合成樹脂により形成され、パッケージの一面を回路基板に当接させることにより放熱効率を高めるようにした構造のものがある。この種のパッケージでは、発光素子チップを取り付ける部位の周囲を所望の配光が得られるように成形してある。ただし、パッケージの材料そのものの反射率は低いから、反射率を高めるために表面に金属膜を形成して反射率を高めることが考えられている（たとえば、特許文献１参照）。
特開２００４−３９６９１号公報 On the other hand, some surface mounting packages are made of ceramics or synthetic resin and have a structure in which heat radiation efficiency is improved by bringing one surface of the package into contact with a circuit board. In this type of package, the periphery of the portion to which the light emitting element chip is attached is molded so as to obtain a desired light distribution. However, since the reflectance of the package material itself is low, it is considered to increase the reflectance by forming a metal film on the surface in order to increase the reflectance (see, for example, Patent Document 1).
JP 2004-39691 A

特許文献１に記載された技術では、金属膜からなる高反射膜を形成することにより反射率を高めており、高反射膜に用いる材料として耐酸化性の金属膜が望ましいとして、Ｎｉ、Ａｕ、Ｐｔ、Ａｇ、Ａｌなどを主成分とする金属膜を用いることが示されている。しかしながら、金属膜は酸化や硫化の影響により反射率が経年的に低下するから、特許文献１に記載された構成のように、表面に金属が露出した構成を採用すると、光の取出効率が低下しやすくなるという問題がある。   In the technique described in Patent Document 1, the reflectance is increased by forming a highly reflective film made of a metal film, and an oxidation-resistant metal film is desirable as a material used for the highly reflective film. It is shown that a metal film mainly containing Pt, Ag, Al or the like is used. However, since the reflectivity of metal films decreases with time due to the effects of oxidation and sulfurization, the light extraction efficiency is reduced if a structure in which metal is exposed on the surface, such as the structure described in Patent Document 1, is adopted. There is a problem that it becomes easy to do.

本発明は上記事由に鑑みて為されたものであり、その目的は、高反射率と経年的な反射率の低下の抑制とを両立させた発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device that achieves both high reflectance and suppression of deterioration in reflectance over time.

請求項１の発明は、発光素子チップの配光を制御する反射面を備えた実装基板に取り付けた発光装置であって、実装基板の表面に金属製の第１の反射層を介して光学多層膜からなる第２の反射層を積層したことを特徴とする。   According to a first aspect of the present invention, there is provided a light-emitting device attached to a mounting board having a reflecting surface for controlling light distribution of the light-emitting element chip, wherein the optical multilayer is formed on the surface of the mounting board via a metal first reflecting layer. A second reflective layer made of a film is laminated.

この構成によれば、金属製の第１の反射層により高反射率を確保することができる上に、光学多層膜からなる第２の反射層により第１の反射層を保護することができる。すなわち、一般に金属製の第１の反射層は反射率が高いものの、大気中の酸素や硫化物によって酸化あるいは硫化しやすく、反射率が経年的に低下するのに対して、第１の反射層を第２反射層で覆ったことにより、第１の反射層を大気から遮断し、結果的に反射率の経年変化を抑制することができる。   According to this configuration, a high reflectance can be ensured by the first reflective layer made of metal, and the first reflective layer can be protected by the second reflective layer made of the optical multilayer film. That is, the first reflective layer made of metal generally has high reflectivity, but is easily oxidized or sulfided by oxygen or sulfide in the atmosphere, and the reflectivity decreases with time. Is covered with the second reflective layer, the first reflective layer is shielded from the atmosphere, and as a result, the secular change of the reflectance can be suppressed.

請求項２の発明では、請求項１の発明において、前記第１の反射層は銀であることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the first reflective layer is silver.

この構成によれば、高反射率である銀を第１の反射層に用いることにより発光素子チップからの光を効率よく取り出すことができる。ただし、銀は他の物質と反応しやすく反射率の経年変化が大きいから、光学多層膜で覆うことにより経年変化を抑制し、高反射率と反射率の経年変化の抑制とを実現することができる。   According to this configuration, it is possible to efficiently extract light from the light emitting element chip by using silver having a high reflectance for the first reflective layer. However, since silver reacts easily with other substances and has a large change over time in reflectance, covering with an optical multilayer film can suppress the change over time and achieve a high reflectivity and a reduction in change over time in reflectivity. it can.

請求項３の発明では、請求項１の発明において、前記発光素子チップの発光波長は青色領域であって、前記第１の反射層は前記実装基板に金属薄膜により形成した配線と同材料であって、前記第２の反射層は発光素子チップの発光波長を含む波長域において高反射率であることを特徴とする。   According to a third aspect of the present invention, in the first aspect of the present invention, the light emission wavelength of the light emitting element chip is a blue region, and the first reflective layer is made of the same material as the wiring formed on the mounting substrate by a metal thin film. In addition, the second reflective layer has a high reflectance in a wavelength region including a light emission wavelength of the light emitting element chip.

この構成によれば、発光素子チップが青色領域の発光波長を有する場合に、配線として青色領域の反射率の低い材料（たとえば、金）を用いた場合でも、青色の波長域については光学多層膜で反射させることができるから、青色領域の光を効率よく取り出すことができる。   According to this configuration, when the light-emitting element chip has a light emission wavelength in the blue region, an optical multilayer film is used for the blue wavelength region even when a material having low reflectance in the blue region (for example, gold) is used as the wiring. Therefore, light in the blue region can be extracted efficiently.

本発明の構成によれば、金属製の第１の反射層により高反射率を確保することができる上に、光学多層膜からなる第２の反射層で第１の反射層を覆っているから、第１の反射層を保護しながらも反射率の低下を抑制することができるという利点がある。すなわち、一般に金属製の第１の反射層は反射率が高いものの、大気中の酸素や硫化物によって酸化あるいは硫化しやすく、反射率が経年的に低下するのに対して、第１の反射層を第２反射層で覆ったことにより、第１の反射層を大気から遮断して反射率の経年変化を抑制することができる上に、第２の反射層が光学多層膜であることにより光学多層膜を用いずに合成樹脂の被膜で覆うような場合に比較すると光の吸収率が低く高反射率が期待できる。   According to the configuration of the present invention, high reflectivity can be ensured by the first reflective layer made of metal, and the first reflective layer is covered with the second reflective layer made of the optical multilayer film. There is an advantage that a decrease in reflectance can be suppressed while protecting the first reflective layer. That is, the first reflective layer made of metal generally has high reflectivity, but is easily oxidized or sulfided by oxygen or sulfide in the atmosphere, and the reflectivity decreases with time. By covering the surface with the second reflective layer, the first reflective layer can be shielded from the atmosphere to suppress the secular change of the reflectance, and the second reflective layer is an optical multilayer film. Compared to the case of covering with a synthetic resin film without using a multilayer film, the light absorption rate is low and a high reflectance can be expected.

（実施形態１）
本実施形態は、図１に示すように、実装基板となるパッケージ１に発光ダイオードである発光素子チップ２を収納した構成を有する。パッケージ１は、セラミックスまたは合成樹脂により形成され、一面に収納凹所１１が開口し、収納凹所１１の底面に薄膜形成技術または厚膜形成技術により形成した配線パターン１２を有する。また、収納凹所１１の底面に発光素子チップ２が固定され、金からなるボンディングワイヤ１３を用いて発光素子チップ２が配線パターン１２に電気的に接続される。図示例では、パッケージ１にスルーホール１４が形成されるとともに、パッケージ１の外面に設けた電極１５と配線パターン１２とがスルーホール１４を通して電気的に接続されている。発光素子チップ２と配線パターン１２との接続はボンディングワイヤ１３を用いずにフリップチップ実装であってもよく、また電極１５との接続もスルーホール１４を用いずに、配線パターン１２が収納凹所１１の開口を通してパッケージ１の外側に導出される構成を採用することも可能である。 (Embodiment 1)
As shown in FIG. 1, the present embodiment has a configuration in which a light emitting element chip 2 that is a light emitting diode is housed in a package 1 that is a mounting substrate. The package 1 is formed of ceramics or synthetic resin, and a storage recess 11 is opened on one surface, and has a wiring pattern 12 formed on the bottom surface of the storage recess 11 by a thin film formation technique or a thick film formation technique. Further, the light emitting element chip 2 is fixed to the bottom surface of the housing recess 11, and the light emitting element chip 2 is electrically connected to the wiring pattern 12 using a bonding wire 13 made of gold. In the illustrated example, a through hole 14 is formed in the package 1, and the electrode 15 provided on the outer surface of the package 1 and the wiring pattern 12 are electrically connected through the through hole 14. The connection between the light emitting element chip 2 and the wiring pattern 12 may be flip-chip mounting without using the bonding wire 13, and the connection with the electrode 15 may be performed without using the through-hole 14, and the wiring pattern 12 is accommodated in the storage recess It is also possible to adopt a configuration that is led out of the package 1 through the 11 openings.

収納凹所１１の底面を除く内側面は底面から開口に向かって昇り傾斜する斜面を形成しており、収納凹所１１の内側面は全体としてテーパ状に形成されている。収納凹所１１の開口は矩形状または円形状とするのが望ましいが他の形状であってもよい。収納凹所１１において斜面となっている内側面は、発光素子チップ２から出射した光の配光を制御するために反射性を持たせている。   The inner side surface except the bottom surface of the storage recess 11 forms an inclined surface that rises toward the opening from the bottom surface, and the inner side surface of the storage recess 11 is formed in a tapered shape as a whole. The opening of the storage recess 11 is preferably rectangular or circular, but may have other shapes. The inner side surface that is an inclined surface in the storage recess 11 is made reflective to control the light distribution of the light emitted from the light emitting element chip 2.

本実施形態では、収納凹所１１の内側面に反射率の高い金属製の第１の反射層３が形成され、第１の反射層３を覆うように化学的に安定な材料からなる光学多層膜（ＤＢＲ膜）を用いた第２の反射層４が形成される。要するに、パッケージ１を実装基板として、実装基板の表面に金属製の第１の反射層３を介して光学多層膜からなる第２の反射層４を積層してある。第１の反射層３には、反射率の高い材料を選択し、たとえばアルミニウム（反射率は約８９％）を用いる。   In the present embodiment, the first reflective layer 3 made of metal having a high reflectance is formed on the inner surface of the storage recess 11, and an optical multilayer made of a chemically stable material so as to cover the first reflective layer 3. A second reflective layer 4 using a film (DBR film) is formed. In short, the package 1 is used as a mounting substrate, and the second reflective layer 4 made of an optical multilayer film is laminated on the surface of the mounting substrate via the first reflective layer 3 made of metal. For the first reflective layer 3, a material having high reflectivity is selected, and for example, aluminum (reflectance is about 89%) is used.

一方、第２の反射層４としては、種々の材料を選択することができるが、絶縁性材料のほうが屈折率差を大きくとることができるから、絶縁性材料を組み合わせることが望ましい。また、第２の反射層４は発光素子チップ２から出射する光の波長領域に対する反射率が高くなるように構成する。本実施形態では、発光素子チップ２として青色系の発光ダイオードを用いており、したがって、第２の反射膜４として、青色領域から緑色領域の光に対する反射率の高い光学多層膜を形成する。この特性を実現するために、たとえば、ＳｉＯ２膜／ＴｉＯ２膜／ＳｉＯ２膜／ＴｉＯ２膜の４層構造を有した光学多層膜を用い、各膜厚を１２５ｎｍとする。 On the other hand, various materials can be selected for the second reflective layer 4, but it is desirable to combine the insulating materials because the insulating material can take a larger refractive index difference. The second reflective layer 4 is configured to have a high reflectivity with respect to the wavelength region of light emitted from the light emitting element chip 2. In the present embodiment, a blue light emitting diode is used as the light emitting element chip 2, and therefore, an optical multilayer film having a high reflectance with respect to light from the blue region to the green region is formed as the second reflective film 4. In order to realize this characteristic, for example, an optical multilayer film having a four-layer structure of SiO 2 film / TiO 2 film / SiO 2 film / TiO 2 film is used, and each film thickness is set to 125 nm.

上述した構成により第１の反射層３と第２の反射層４とを合成した反射率を９５％以上とすることができる。したがって、発光素子チップ２からの出射光は、第１の反射層３および第２の反射層４で反射され、収納凹所１１から効率よく取り出される。ここに、収納凹所１１にはエポキシ樹脂あるいはシリコーン樹脂からなる封止樹脂５が充填されている。この封止樹脂５に黄色系の蛍光物質を分散させておけば、発光素子チップ２からの青色系の出射光の一部の波長が変換され、青色系と黄色系との混色光である白色光を取り出すことができる。   With the above-described configuration, the combined reflectance of the first reflective layer 3 and the second reflective layer 4 can be 95% or more. Therefore, the emitted light from the light emitting element chip 2 is reflected by the first reflective layer 3 and the second reflective layer 4 and is efficiently extracted from the storage recess 11. Here, the housing recess 11 is filled with a sealing resin 5 made of epoxy resin or silicone resin. If a yellow fluorescent material is dispersed in the sealing resin 5, a part of the wavelength of the blue light emitted from the light emitting element chip 2 is converted, and white light which is a mixed color light of blue and yellow light. Light can be extracted.

上述した例では第１の反射層３としてアルミニウムを用いているが、銀を用いると反射率をさらに高めることができる。銀は、アルミニウムに比較すると、マイグレーションによる反射率の低下を生じやすく、また酸化や硫化によっても反射率が低下しやすいという問題を有しているが、上述したように第１の反射層３の上に化学的に安定な第２の反射層４を積層しているから、第２の反射層４が第１の反射層３の保護膜として機能し、結果的に第１の反射層３が経年的に低下するのを抑制することができる。すなわち、高い反射率と経年変化の抑制とを両立することができる。   In the example described above, aluminum is used as the first reflective layer 3, but the reflectance can be further increased by using silver. Compared to aluminum, silver has a problem that the reflectivity is likely to decrease due to migration, and the reflectivity is also likely to decrease due to oxidation or sulfuration. Since the chemically stable second reflective layer 4 is laminated thereon, the second reflective layer 4 functions as a protective film for the first reflective layer 3, and as a result, the first reflective layer 3 It is possible to suppress the deterioration over time. That is, it is possible to achieve both high reflectance and suppression of secular change.

（実施形態２）
実施形態１では、収納凹所１１の内側に第１の反射層３と配線パターン１２とを形成しており、配線パターン１２にはボンディングワイヤ１３を接続するかあるいは発光素子チップ２をフリップチップ実装する必要があるから表面に金を用いる。これに対して第１の反射層３は反射率の高い材料を選択するために、実施形態１では、アルミニウムまたは銀を採用している。したがって、収納凹所１１の内側には２種類の金属層を形成する必要がある。 (Embodiment 2)
In the first embodiment, the first reflective layer 3 and the wiring pattern 12 are formed inside the storage recess 11, and a bonding wire 13 is connected to the wiring pattern 12 or the light emitting element chip 2 is mounted in a flip chip manner. Because it is necessary to do so, use gold on the surface. On the other hand, in the first embodiment, aluminum or silver is used for the first reflective layer 3 in order to select a material having high reflectance. Therefore, it is necessary to form two types of metal layers inside the storage recess 11.

しかしながら、２種類の金属層を収納凹所１１に形成すると１種類の金属層のみを形成する場合に比較して工数が増加し、結果的にコスト増につながる。金属層として配線パターン１２を形成する金は必須である。そこで、本実施形態では、図２に示すように、第１の反射層３を配線パターン１２と同じ金で形成した構成を採用する。すなわち、配線パターン１２を形成している金属層を延長して第１の反射層３を形成し、さらに、この金属層を収納凹所１１の開口を通してパッケージ１の外側まで引き出すことにより、電極１５を形成している。また、図２に示す構成例では金バンプ６を用いて発光素子チップ２を配線パターン１２に対してフリップチップ実装している。   However, if two types of metal layers are formed in the storage recess 11, the number of man-hours increases as compared with the case where only one type of metal layer is formed, resulting in an increase in cost. Gold for forming the wiring pattern 12 as a metal layer is essential. Therefore, in the present embodiment, as shown in FIG. 2, a configuration in which the first reflective layer 3 is formed of the same gold as the wiring pattern 12 is employed. That is, the metal layer forming the wiring pattern 12 is extended to form the first reflective layer 3, and the metal layer is drawn out to the outside of the package 1 through the opening of the housing recess 11, thereby forming the electrode 15. Is forming. In the configuration example shown in FIG. 2, the light emitting element chip 2 is flip-chip mounted on the wiring pattern 12 using the gold bumps 6.

上述した構成では、第１の反射層３が金であって、金は可視光の波長領域のうち５５０ｎｍより波長の短い領域では反射率が低下することが知られている。ただし、実施形態１と同様に、青色系から緑色系の波長領域において高い反射率を有する光学多層膜を第２の反射層４として設け、第２の反射層４で第１の反射層３を覆うから、金において反射率が低下する波長領域を第２の反射層４の反射率で補うことができ、全体として可視光領域の全波長について高反射率を維持することが可能になる。   In the configuration described above, it is known that the first reflective layer 3 is gold, and the reflectance of gold is reduced in a wavelength region shorter than 550 nm in the visible light wavelength region. However, as in the first embodiment, an optical multilayer film having a high reflectance in the blue to green wavelength region is provided as the second reflective layer 4, and the first reflective layer 3 is formed by the second reflective layer 4. Since it covers, the wavelength region in which the reflectivity of gold is reduced can be supplemented by the reflectivity of the second reflective layer 4, and as a whole, the high reflectivity can be maintained for all wavelengths in the visible light region.

なお、実施形態１では収納凹所１１に封止樹脂５を充填し、封止樹脂５に蛍光物質を分散させているが、本実施形態ではパッケージ１に形成した収納凹所１１の開口面をシリコーン樹脂のシートからなる波長変換シート７で覆っている。波長変換シート７はシート状のシリコーン樹脂に蛍光物質を分散させたものであって、発光素子チップ２に青色系の発光ダイオードを用いる場合には黄色系の蛍光物質を用いることにより、白色系の光を取り出すことができる。他の構成および機能は実施形態１と同様である。   In the first embodiment, the housing recess 11 is filled with the sealing resin 5 and the fluorescent material is dispersed in the sealing resin 5. In this embodiment, the opening surface of the housing recess 11 formed in the package 1 is used. It is covered with a wavelength conversion sheet 7 made of a silicone resin sheet. The wavelength conversion sheet 7 is obtained by dispersing a fluorescent substance in a sheet-like silicone resin. When a blue light emitting diode is used for the light emitting element chip 2, a white fluorescent substance is used by using a yellow fluorescent substance. Light can be extracted. Other configurations and functions are the same as those of the first embodiment.

なお、上述した各実施形態においては、凹面状の反射面を形成することにより比較的狭い空間領域に配光しているが、凸面状の反射面を形成することにより比較的広い空間領域に配光する構成とする場合であっても本発明の技術思想を適用することができる。要するに、発光素子チップ２からの出射光を反射させる反射面を設ける構造であれば、反射面の形状にかかわらず本発明の技術思想を適用可能である。   In each of the embodiments described above, the light is distributed in a relatively narrow space area by forming a concave reflecting surface, but the light is distributed in a relatively wide space area by forming a convex reflecting surface. Even if it is the case where it is set as the structure which shines, the technical idea of this invention is applicable. In short, the technical idea of the present invention can be applied regardless of the shape of the reflecting surface as long as the reflecting surface for reflecting the light emitted from the light emitting element chip 2 is provided.

実施形態１を示す断面図である。1 is a cross-sectional view showing a first embodiment. 実施形態２を示す断面図である。FIG. 6 is a cross-sectional view showing a second embodiment.

符号の説明Explanation of symbols

１ パッケージ（実装基板）
２ 発光素子チップ
３ 第１の反射層
４ 第２の反射層 1 Package (Mounting board)
2 Light-Emitting Element Chip 3 First Reflective Layer 4 Second Reflective Layer

Claims (3)

発光素子チップの配光を制御する反射面を備えた実装基板に取り付けた発光装置であって、実装基板の表面に金属製の第１の反射層を介して光学多層膜からなる第２の反射層を積層したことを特徴とする発光装置。   A light-emitting device attached to a mounting board having a reflecting surface for controlling light distribution of a light-emitting element chip, wherein a second reflection made of an optical multilayer film is formed on the surface of the mounting board via a metal first reflecting layer. A light-emitting device in which layers are stacked. 前記第１の反射層は銀であることを特徴とする請求項１記載の発光装置。   The light emitting device according to claim 1, wherein the first reflective layer is silver. 前記発光素子チップの発光波長は青色領域であって、前記第１の反射層は前記実装基板に金属薄膜により形成した配線と同材料であって、前記第２の反射層は発光素子チップの発光波長を含む波長域において高反射率であることを特徴とする請求項１記載の発光装置。   The emission wavelength of the light emitting element chip is a blue region, the first reflective layer is made of the same material as the wiring formed on the mounting substrate by a metal thin film, and the second reflective layer is a light emitting element of the light emitting element chip. The light-emitting device according to claim 1, wherein the light-emitting device has high reflectance in a wavelength region including a wavelength.
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