JP2019012860A - Light-emitting device - Google Patents

Abstract

To provide a light-emitting device with excellent light extraction.SOLUTION: A light-emitting device 10 comprises: a light emitting element 20 including a first surface 21 positioned at a light emitting surface side of the light-emitting device 10, a second surface 22 facing the first surface 21, and a side surface 23 positioned between the first surface 21 and second surface 22; a translucent member 30 which is formed by a material including a resin, covers at least one part of the side surface 23 of light emitting element 20, and includes a first surface 31 positioned at the light emitting surface side; a coated member 40 which covers an outer surface 33 of the translucent member 30, and includes a first surface 41 positioned at the light emitting surface side; a wavelength conversion member 50 which covers the first surface 21 of the light emitting element 20, the first surface 31 of translucent member 30, and the first surface 41 of the coated member 40; and a light reflection film 70 including a first reflection film 71 which is provided between the outer surface 33 of translucent member 30 and the coated member 40, and is made from an inorganic material, and a second light reflection film 72 which is provided between the first surface 41 of coating member 40 and the wavelength conversion member 50, and is made from the inorganic material.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a light emitting device.

  There is known a light emitting device in which a side surface of a light emitting element is covered with a covering member formed of a light reflective resin material (for example, Patent Documents 1 to 3). In these light emitting devices, a light transmissive member is disposed between the light emitting element and the covering member, and light emitted from the side surface of the light emitting element is extracted through the light transmissive member to the light emitting surface side of the light emitting device. The light extraction efficiency of the light emitting device is improved. The covering member has a function of maintaining the strength of the light emitting device instead of the housing, and a function of reflecting light that has passed through the translucent member and reached the covering member.

  In addition, there is known a light emitting device that emits a light emission color different from that of the light emitting element by converting the wavelength of a part of the light from the light emitting element by disposing a wavelength conversion member on the light emitting surface side of the light emitting device (for example, patents). Literatures 1-3). The wavelength conversion member is provided so as to cover at least the light extraction surface side of the light emitting element and the translucent member, thereby emitting light emitted from the light emitting element toward the light emitting surface and from the light emitting element through the translucent member. It is possible to convert the wavelength of light emitted in the surface direction. Furthermore, a wavelength conversion member can also be formed so that at least one part of a coating | coated member may be covered (for example, patent documents 1-3). A part of the light incident on the wavelength conversion member is converted in wavelength and scattered by the phosphor in the wavelength conversion member, and a part of the scattered light is reflected by the covering member while being reflected by the coating member. Propagate to the whole. Thereby, the light emission surface of a light-emitting device can be expanded by enlarging the area of a wavelength conversion member.

JP 2012-227470 A JP2013-012545A International Publication No. 2013/005646

  However, depending on the material and thickness of the covering member, the covering member may not be able to sufficiently reflect light.

  Accordingly, an object of one embodiment of the present invention is to provide a light-emitting device with good light extraction and a method for manufacturing the same.

A light emitting device according to an embodiment of the present invention includes:
A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting device having
A translucent member formed of a material containing resin, covering at least part of the side surface of the light emitting element, and having a first surface located on the light emitting surface side;
A covering member that covers an outer surface of the translucent member and has a first surface located on the light emitting surface side;
A wavelength conversion member that covers the first surface of the light emitting element, the first surface of the translucent member, and the first surface of the covering member;
Provided between the outer surface of the translucent member and the covering member, provided between the first reflective film made of an inorganic material, the first surface of the covering member and the wavelength conversion member, A light reflecting film including a second reflecting film made of an inorganic material.

A method of manufacturing a light emitting device according to an embodiment of the present invention includes:
Arranging the light emitting element on the wavelength conversion member;
Covering the side surface of the light emitting element with a translucent member;
Covering the outer surface of the translucent member with a first reflective film that is an inorganic substance;
Covering the wavelength conversion member exposed from the translucent member with a second reflective film that is an inorganic substance;
Covering the first reflective film and the second reflective film with a covering member.

  According to one embodiment of the present invention, the thickness of the covering member can be reduced while suppressing a decrease in mechanical strength and an increase in light leakage.

1 is a schematic plan view of the light emitting device according to Embodiment 1. FIG. FIG. 2 is a schematic cross-sectional view along the line AA in FIG. FIG. 3 is a schematic cross-sectional view taken along the line AA of FIG. FIG. 4 is an enlarged cross-sectional view of the light-emitting element shown in FIG. FIGS. 5A and 5B are schematic plan views for explaining a first manufacturing method of the light-emitting device according to Embodiment 1. FIG. 6A and 6B are schematic plan views for explaining a first manufacturing method of the light-emitting device according to Embodiment 1. FIG. FIG. 7A and FIG. 7B are schematic plan views for explaining a first manufacturing method of the light emitting device according to the first embodiment. 8A is a schematic cross-sectional view taken along line BB in FIG. 5A, FIG. 8B is a schematic cross-sectional view taken along line CC in FIG. 5B, and FIG. (C) is a schematic sectional drawing in alignment with the DD line | wire of Fig.6 (a). 9A is a schematic cross-sectional view taken along line EE in FIG. 6B, FIG. 9B is a schematic cross-sectional view taken along line FF in FIG. 7A, and FIG. (C) is a schematic sectional drawing in alignment with the GG line of FIG.7 (b). FIG. 10A and FIG. 10B are schematic plan views for explaining a second manufacturing method of the light emitting device according to the first embodiment. 11A is a schematic cross-sectional view taken along the line HH in FIG. 10A, and FIG. 11B is a schematic cross-sectional view taken along the line II in FIG. 10B. FIG. 12 is a schematic plan view of the light emitting device according to the second embodiment. FIG. 13 is a schematic cross-sectional view taken along the line JJ of FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating specific directions and positions (for example, “up”, “down”, “right”, “left” and other terms including those terms) are used as necessary. . The use of these terms is to facilitate understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Moreover, the part of the same code | symbol which appears in several drawing shows the same part or member.

<Embodiment 1>
The light emitting device 10 according to the present embodiment shown in FIGS. 1 and 2A includes a light emitting element 20, a translucent member 30 provided on the side surface 23 side of the light emitting element 20, and a translucent member 30. And a covering member 40 that covers the outer surface 33. The light emitting device 10 can include a wavelength conversion member 50 on the first surface (upper surface) 11 side that functions as a light emitting surface. The wavelength conversion member 50 covers the first surface (upper surface) 21 of the light emitting element 20, the first surface (upper surface) 31 of the translucent member 30, and the first surface (upper surface) 41 of the covering member 40. Yes. A light reflecting film 70 is provided between the covering member 40 and the translucent member 30 and between the covering member 40 and the wavelength conversion member 50.
By providing the light reflecting film 70 between the covering member 40 and the translucent member 30, the light passing through the translucent member 30 from the light emitting element 20 reflects the light before reaching the covering member 40. It can be reflected by the film 70. In addition, by providing the light reflecting film 70 between the covering member 40 and the wavelength conversion member 50, the light propagating through the wavelength conversion member 50 is transmitted to the light before reaching the covering member 40. It can be reflected by the reflective film 70. Therefore, the covering member 40 can be arbitrarily designed without considering the decrease in the light reflectance of the covering member 40.

As shown in FIG. 4, the light emitting element 20 can include a translucent substrate 27 and a semiconductor stacked body 28 formed on the lower surface side of the translucent substrate 27. The light emitting element 20 includes a first surface (upper surface) 21 on the translucent substrate 27 side, a second surface (lower surface) 22 on the semiconductor stacked body 28 side facing the first surface 21, and a first surface. 21 and a plurality of side surfaces 23 located between the second surface 22. The first surface 21 is located on the light emitting surface side of the light emitting device 10.
As the translucent substrate 27, for example, a sapphire substrate can be used.
A pair of electrodes 251 and 252 for energizing the light emitting element 20 is provided on the second surface (lower surface) 22 side of the light emitting element 20. Note that in this specification, the “second surface 22” of the light emitting element 20 refers to the surface of the light emitting element 20 in a state where the electrodes 251 and 252 are not included. Therefore, in the present embodiment, the second surface 22 coincides with the lower surface of the semiconductor stacked body 28.

  Referring to FIG. 2 again, the side surface 23 of the light emitting element 20 is covered with a light transmissive member 30. The translucent member 30 guides light emitted from the side surface 23 of the light emitting element 20 in the direction of the light emitting surface (first surface) 11 of the light emitting device 10. By providing the translucent member 30 between the side surface 23 of the light emitting element 20 and the covering member 40, light reaching the side surface 23 of the light emitting element 20 can be extracted from the side surface 23 to the translucent member 30. . Thus, by providing the translucent member 30 on the side surface 23 of the light emitting element 20, light loss can be suppressed and the light extraction efficiency of the light emitting device 10 can be improved.

  The outer surface 33 of the translucent member 30 is preferably inclined outward from the second surface 22 side of the light emitting element 20 toward the first surface 21 side. That is, in the cross-sectional view as shown in FIG. 2, it is preferable that the left and right outer surfaces 33 of the translucent member 30 expand toward the light emitting surface (first surface) 11 of the light emitting device 10. The light emitted from the side surface 23 of the light emitting element 20 and propagating through the translucent member 30 reaches the inclined outer surface 33. Here, when light is reflected by the light reflecting film 70 covering the outer surface 33, the light can be directed toward the first surface 11 of the light emitting device 10. Thereby, the light extraction efficiency of the light emitting device 10 can be improved.

In the cross-sectional view of the light emitting element 20 shown in FIG. 2, the angle formed by the side surface 23 and the outer surface 33 of the translucent member 30 (referred to as “inclination angle θ ₁ ”) is 40 ° to 60 °. For example, the angle can be 45 °. If the inclination angle theta ₁ is large, (in FIG. 1, a substantially depicted in circular) contour of the first surface 31 of the translucent member 30 is increased, light extraction efficiency is improved. On the other hand, when the inclination angle theta ₁ is small, the external shape of the first surface 31 is reduced, it is possible to reduce the dimensions of one side of the light emitting device 10 in the top view (i.e., the light emitting device 10 can be miniaturized). Considering the light extraction efficiency and the miniaturization of the light emitting device 10, it is optimal that the inclination angle θ ₁ = 45 °.

  When the side surface 23 of the light emitting element 20 is inclined with respect to the second surface 22, the effect of the translucent member 30 becomes significant. For example, in the manufacturing process of the light emitting element 20, when the light emitting element 20 is separated into pieces by cleaving the translucent substrate 27 (for example, a sapphire substrate), the side surface 23 of the light emitting element 20 is relative to the second surface 22. May not be vertical. For example, in a cross-sectional view, the outer shape of the light emitting element 20 can be a parallelogram (see FIG. 3) or a trapezoid. The first surface 21 and the second surface 22 of the light emitting element 20 are parallel, two opposing side surfaces 23 are parallel, and each side surface 23 is inclined with respect to the first surface 21 and the second surface 22. . When the side surface 23 of such a light emitting element 20 is directly covered with the covering member 40 without providing the translucent member 30, the angle between the one side surface 23 and the second surface 22 becomes an obtuse angle. The light reflected by the covering member 40 covering the one side surface 23 can be taken out from the light emitting surface (first surface 11) of the light emitting device 10 as it is toward the first surface 21 of the light emitting element 20. However, since the angle between the other side surface 23 and the second surface 22 is an acute angle, the light reflected by the covering member 40 covering the other side surface 23 is the second surface 22 of the light emitting element 20. The light intensity can be attenuated in the light emitting element 20 before being taken out from the light emitting element 20. By covering the other side surface 23 with the translucent member 30, the light that has reached the other side surface 23 is not reflected to the second surface 22 side, but passes through the translucent member 30 and the first side of the light emitting device 10. 1 surface 11 side.

The semiconductor stacked body 28 includes three semiconductor layers, a first conductivity type semiconductor layer 281, a light emitting layer 282, and a second conductivity type semiconductor layer 283 (FIG. 4). Referring to FIG. 2, light emitted from the light emitting element 20 (more precisely, the light emitting layer 282 of the semiconductor stacked body 28 shown in FIG. 4) passes from the semiconductor stacked body 28 through the translucent substrate 27 or the semiconductor stacked layer. The light is emitted from the body 28 to the first surface 11 side of the light emitting device 10 through the side surface 23 of the light emitting element 20 and the translucent member 30. The translucent member 30 covers at least a part of the side surface 23 of the light emitting element 20.
When the translucent member 30 covers a part 23 of the side surface, of the three semiconductor layers 281, 282, and 283 exposed on the side surface of the semiconductor stacked body 28, the side surface of the first conductive type semiconductor layer 281 and the light emitting layer It is preferable that all side surfaces of 282 are covered with the translucent member 30.

  As shown in FIG. 2, the translucent member 30 may further cover the entire first surface 21 of the light emitting element 20. The first surface 21 of the light emitting element 20 can be protected by the film-like translucent member 30 t present on the first surface 21 of the light emitting element 20. The film-like translucent member 30 t can also function as an adhesive member that adheres the first surface 21 and the wavelength conversion member 50.

  As shown in FIG. 2, the covering member 40 covers the outer surface 33 of the translucent member 30. A light reflecting film 70 (first reflecting film 71) described later is disposed between the covering member 40 and the outer surface 33 of the translucent member 30. Even if the covering member 40 is made of a material having a high light reflectance (light reflective material), it is made of a material having a low light reflectance, for example, a light transmittance or a light absorption rate. Also good. The covering member 40 further covers the side surfaces 251c and 252c of the electrodes 251 and 252 of the light emitting element 20 and the portion of the second surface (lower surface) 22 of the light emitting element 20 where the electrodes 251 and 252 are not provided. It may be.

  The wavelength conversion member 50 provided on the first surface 11 side of the light emitting device 10 includes a first surface (upper surface) 21 of the light emitting element 20, a first surface (upper surface) 31 of the translucent member 30, and a coating. The first surface (upper surface) 41 of the member 40 is covered. The first surfaces (upper surfaces) 21, 31, 41 are located on the light emitting surface (first surface 11) side of the light emitting device 10. Between the wavelength converting member 50 and the first surface 41 of the covering member 40, a light reflecting film 70 (second reflecting film 72) described later is disposed.

  The light emitting device 10 includes a light reflecting film 70 for reflecting the light emitted from the light emitting element 20 and the light wavelength-converted by the wavelength conversion member 50 toward the light emitting surface (first surface 11 of the light emitting device 10). be able to. The light reflecting film 70 may include a first reflecting film 71, a second reflecting film 72, a third reflecting film 73, and a fourth reflecting film 74. The first to fourth reflective films will be described individually.

(First reflective film 71)
A first reflective film 71 is provided between the outer surface 33 of the translucent member 30 and the covering member 40. Accordingly, the light extracted from the side surface 23 of the light emitting element 20 to the light transmissive member 30 can be reflected by the first reflective film 71 and extracted from the first surface (upper surface) 11 side of the light emitting device 10. .

  When the first reflective film 71 is not provided, the outer surface 33 of the translucent member 30 is covered with the covering member 40. By using a material having a high light reflectance (for example, a white resin material) for the covering member 40, it is possible to reflect light by the covering member 40 that covers the outer surface 33 of the translucent member 30. However, when the wall thickness of the covering member 40 is thin, a part of the light may be transmitted through the covering member 40. In addition, as the additive added to the covering member 40, it is not possible to select an additive that reduces the light reflectance. For example, since carbon black is black and absorbs light, when carbon black is added to the covering member 40, a part of the light reaching the outer surface 33 of the translucent member 30 can be absorbed by the covering member 40. The light extraction efficiency of 10 may be reduced.

  However, by providing the first reflective film 71 between the translucent member 30 and the covering member 40, substantially all of the light reaching the outer surface 33 of the translucent member 30 is reflected by the first reflective film 71. The covering member 40 is not reached. Therefore, it is possible to suppress a decrease in light extraction efficiency of the light emitting device 10 (because the light reflectance of the covering member 40 is low). Thereby, for example, an arbitrary additive (for example, an additive such as carbon black) can be added to the covering member 40.

(Second reflective film 72)
A second reflective film 72 is provided between the first surface 41 of the covering member 40 and the second surface 52 of the wavelength conversion member 50. Thereby, after the wavelength conversion by the wavelength conversion member 50, the light directed toward the first surface 41 of the covering member 40 is reflected by the second reflection film 72 and extracted from the first surface 11 side of the light emitting device 10. Can do.

The light emitted from the light emitting element 20 enters the wavelength conversion member 50 from the upper surface 21 of the light emitting element 20 through the film-shaped light transmitting member 30 t or from the upper surface 31 of the light transmitting member 30. The wavelength conversion member 50 includes a wavelength conversion material such as a phosphor, and the wavelength of the light is converted by irradiating the wavelength conversion material with light. At this time, the wavelength-converted light is scattered by the wavelength conversion material, and part of the light travels toward the second surface (lower surface) 52 of the wavelength conversion member 50.
When the second reflective film 72 is not provided, part of the scattered light travels toward the first surface (upper surface) 41 of the covering member 40 that contacts the second surface 52 of the wavelength conversion member 50. By using a material having a high light reflectance (for example, a white resin material) for the covering member 40, the light can be reflected by the first surface 41 of the covering member 40. However, when an additive capable of reducing the light reflectance such as carbon black is added to the covering member 40, a part of the light reaching the second surface 52 of the wavelength conversion member 50 can be absorbed by the covering member 40. The light extraction efficiency of the light emitting device 10 is reduced.

  However, by providing the second reflective film 72 between the wavelength conversion member 50 and the covering member 40, substantially all of the light that reaches the first surface 41 of the covering member 40 is reflected by the second reflective film 72. The covering member 40 is not reached. Therefore, a decrease in the light extraction efficiency of the light emitting device 10 (due to the low light reflectance of the covering member 40) can be suppressed, and an arbitrary additive (for example, an additive such as carbon black) can be added to the covering member 40. Can be added.

(3rd reflective film 73, 4th reflective film 74)
A third reflective film 73 may be provided between the side surfaces 251 c and 252 c of the electrodes 251 and 252 and the covering member 40. In addition, a fourth reflective film 74 is provided between the covering member 40 and a region of the second surface 22 of the light emitting element 20 where the electrodes 251 and 252 are not formed (referred to as “exposed region”). May be. Thereby, the light generated in the light emitting layer 282 (see FIG. 4) of the light emitting element 20 and directed toward the second surface (lower surface) 22 of the light emitting element 20 is efficiently reflected by the third reflective film 73, The light emitting element 20 can be taken out of the light emitting element 20 from the side surface 23 or the first surface (upper surface) 21.

  When the third reflective film 73 is not provided, the exposed region of the second surface 22 of the light emitting element 20 is covered with the covering member 40. By using a material having a high light reflectance (for example, a white resin material) for the covering member 40, it is possible to reflect the light toward the exposed region by the second surface 22 of the light emitting element 20. However, when an additive capable of reducing the light reflectance such as carbon black is added to the covering member 40, a part of the light reaching the exposed region of the light emitting element 20 can be absorbed by the covering member 40. Light extraction efficiency decreases.

  However, by providing the fourth reflective film 74 between the exposed region of the light emitting element 20 and the covering member 40, the light that reaches the exposed region of the second surface 22 of the light emitting element 20 is substantially reflected by the fourth reflective film 74. All are reflected and do not reach the covering member 40. Therefore, a decrease in the light extraction efficiency of the light emitting device 10 (due to the low light reflectance of the covering member 40) can be suppressed, and an arbitrary additive (for example, an additive such as carbon black) can be added to the covering member 40. Can be added.

  In addition, since the light which goes to the electrodes 251 and 252 provided in the lower surface 22 of the light emitting element 20 is reflected by the electrodes 251 and 252, it reaches the third reflective film 73 covering the side surfaces 251 c and 252 c of the electrodes 251 and 252. There is virtually no light. However, the provision of the third reflective film 73 suppresses the formation of a gap between the second reflective film 72 and the side surfaces 251c and 252c of the electrodes 251 and 252 and improves the light extraction efficiency of the light emitting device 10. be able to.

  As described above, the first reflective film 71, the third reflective film 73, and the fourth reflective film 74 contribute to the reflection of light generated in the light emitting layer 282 (see FIG. 4) of the light emitting element 20. On the other hand, the second reflective film 72 mainly contributes to the reflection of the light whose wavelength is converted by the wavelength conversion member 50. As described above, the wavelength of light to be reflected by the reflective film differs depending on the portion of the light reflective film 70.

  The first reflective film 71 preferably has high adhesion to the translucent member 30, the second reflective film 72 preferably has high adhesion to the wavelength conversion member 50, and the third reflective film 73 is an electrode. The adhesiveness with 251 and 252 is preferably high, and the fourth reflective film 74 preferably has high adhesiveness with the semiconductor laminate 28. As described above, the targets for improving the adhesiveness of the light reflecting film 70 are different depending on the portion of the light reflecting film 70.

  Therefore, the first to fourth reflection films 71 to 74 of the light reflection film 70 can be formed from preferable materials, respectively. However, if each reflective film is formed of different members, it is necessary to individually provide a process for manufacturing each reflective film, which may lead to a complicated manufacturing process and an increase in manufacturing cost of the light emitting device 10.

  In order to suppress the manufacturing cost, it is preferable that at least two or more of the first to fourth reflective films 71 to 74 are formed of the same material. Thereby, the manufacturing process can be simplified. For example, the first reflective film 71 and the second reflective film 72 can be formed from the same material. Thereby, since the 1st reflective film 71 and the 2nd reflective film 72 can be formed in the same process, the simplification of a manufacturing process can be achieved. In addition, since the first reflective film 71 and the second reflective film 72 can be formed from a continuous film, it is possible to suppress the occurrence of a gap between the first reflective film 71 and the second reflective film 72.

  The light reflecting film 70 can be formed of an inorganic material. For example, it can be formed from an inorganic material such as a dielectric multilayer film or a metal film. A part of the light reflecting film 70 may be formed from a dielectric multilayer film, and another part may be formed from a metal film. The entire light reflecting film 70 may be formed from either a dielectric multilayer film or a metal film. May be.

Since the dielectric multilayer film is formed of a multilayer film of an insulating material, it is advantageous in that a short circuit does not occur even if it is directly formed on the surfaces of the electrodes 251 and 252 and the semiconductor laminate 28. Therefore, the third reflective film 73 that can come into contact with the electrodes 251 and 252 and the fourth reflective film 74 that can come into contact with the electrodes 251 and 252 and the semiconductor stacked body 28 are preferably formed of a dielectric multilayer film.
Since the dielectric multilayer film is designed to reflect light of a specific wavelength, the wavelength range of light that can be reflected is narrow. Since the third reflective film 73 and the fourth reflective film 74 mainly contribute to the reflection of light emitted from the light emitting element 20, even if the dielectric multilayer film has a narrow wavelength range that can be reflected, it is highly efficient. Can be reflected.

  The metal film has a high reflectance in a relatively wide wavelength range. Therefore, the metal film has no short circuit problem and is suitable for being formed in a portion where light having different wavelengths can be mixed. Since the first reflective film 71 and the second reflective film 72 do not contact the electrodes 251 and 252 and the semiconductor stacked body 28, it is preferable to form the first reflective film 71 and the second reflective film 72 from a metal film. In particular, since the second reflective film 72 needs to reflect mixed light including light emitted from the light emitting element 20 and light converted in wavelength by the wavelength conversion member 50, a metal film having a wide wavelength range that can be reflected. It is preferably formed from (for example, a metal film of Ag or an Ag alloy).

  The third reflective film 73 and the fourth reflective film 74 may be formed of a metal film. In this case, the exposed regions of the side surfaces 251c and 252c of the electrodes 251 and 252 and the second surface 22 of the light emitting element 20 are used. Then, it is covered with a translucent insulating film (for example, silicon oxide), and a third reflective film 73 and a fourth reflective film 74 made of a metal film are formed on the insulating film.

  Furthermore, the first to fourth reflective films 71 to 74 may be laminated reflective films in which a dielectric multilayer film and a metal film are laminated. Specifically, a dielectric multilayer film is disposed on the light emitting element 20 side, and a metal film is disposed on the covering member 40 side. Since the dielectric multilayer film is disposed between the semiconductor laminate 28 and the electrodes 251 and 252 of the light emitting element 20 and the metal film, a short circuit between the semiconductor laminate 28 and the electrodes 251 and 252 and the metal layer can be prevented. In the case of mixed light including light emitted from the light emitting element 20 and light converted in wavelength by the wavelength conversion member 50, part of the light can pass through the laminated reflective film. Since a part of the light that has passed through the dielectric multilayer film can be reflected by the metal layer covering the dielectric multilayer film, it is possible to suppress the light from reaching the covering member 40.

<First manufacturing method>
A first manufacturing method of the light emitting device 10 according to the present embodiment will be described with reference to FIGS. In the first manufacturing method, a plurality of light emitting devices 10 can be manufactured simultaneously.

Step 1-1. Arrangement of Translucent Member 30 On the second surface 520 of the wavelength conversion sheet 500, the liquid resin material 300 for forming the translucent member 30 is applied in a plurality of separated island shapes (FIG. 5A ), FIG. 8 (a)). At this time, a plurality of island-shaped liquid resin materials 300 are arranged on one wavelength conversion sheet 500 using a relatively large wavelength conversion sheet 500. Each liquid resin material 300 provided in an island shape can have any shape in plan view, and examples thereof include a circle, an ellipse, a square, and a rectangle. Note that if the interval between the adjacent island-shaped liquid resin materials 300 is too wide, the number of light emitting devices 10 that can be formed at the same time decreases, and the mass production efficiency of the light emitting devices 10 deteriorates. It is desirable to arrange them at intervals.

Step 1-2. Fixing of Light-Emitting Element 20 and Curing of Liquid Resin Material 300 As shown in FIGS. 5B and 8B, the light-emitting element 20 is disposed on each island-shaped liquid resin material 300. At this time, the first surface 21 of the light emitting element 20 is disposed to face the second surface 520 of the wavelength conversion sheet 500. By simply placing the light emitting element 20 on the island-shaped liquid resin material 300 or pressing the light emitting element 20 after placing the light emitting element 20, the liquid resin material 300 crawls up to the side surface 23 of the light emitting element 20 due to surface tension. The outer surface 303 of the liquid resin material 300 (the outer surface 33 of the subsequent translucent member 30) has a shape that expands downward. Thereafter, the liquid resin material 300 is cured by heating or the like to obtain the translucent member 30.
The shape of the liquid resin material 300 in a plan view is deformed by the arrangement or pressing of the light emitting element 20, and the first surface 31 of the translucent member 30 included in the light emitting device 10 which is the final product (see FIGS. 1 and 2). The shape almost coincides with the outer shape.

  In this manufacturing method, a part of the liquid resin material 300 exists in a film shape between the wavelength conversion sheet 500 and the light emitting element 20. The film-shaped translucent member 30 t formed by curing the film-shaped liquid resin material 300 can also function as an adhesive between the wavelength conversion sheet 500 and the light emitting element 20. The thickness of the film-like light transmissive member 30 t is preferably determined in consideration of adhesiveness and heat dissipation of the light emitting device 10. Specifically, when the light emitting device 10 shown in FIGS. 1 and 2 is caused to emit light, heat generated from the wavelength conversion member 50 can be efficiently conducted to the mounting substrate side via the light emitting element 20. In addition, the thickness of the film-like translucent member 30t can be set to, for example, 2 to 30 μm, preferably 4 to 20 μm, and most preferably about 5 to 10 μm.

Step 1-3. Formation of Continuous Light Reflecting Film 700 As shown in FIGS. 6A and 8C, the light emitting element 20, the translucent member 30, and the wavelength conversion sheet 500 are covered with the continuous light reflecting film 700. The light reflection continuous film 700 becomes the light reflection film 70 after being separated into individual light emitting devices 10 (see FIGS. 1 and 2). The light reflection continuous film 700 is a first portion 710 (the first reflection film 71 after being singulated) that covers the outer surface 33 of the light transmissive member 30, and a wavelength conversion sheet 500 that is exposed from the light transmissive member 30. 2 portions 720 (second reflective film 72 after being separated into individual pieces). The light reflection continuous film 700 further includes a third portion 730 (third reflective film 73 after separation) that covers the side surfaces 251c and 252c of the electrodes 251 and 252 and an exposed region of the second surface 22 of the light emitting element 20. And a fourth portion 740 (fourth reflective film 74 after being singulated). Further, a fifth portion 750 covering the surfaces 251s and 252s of the electrodes 251 and 252 may be included.

The first to fourth portions 710 to 740 constituting the light reflection continuous film 700 can be formed by a film forming method such as sputtering, CVD, coating, or spraying. The first to fourth portions 710 to 740 can be formed individually, but are preferably formed simultaneously.
When the light reflection continuous film 700 is formed of a metal material, an insulating film is formed on the surfaces of the electrodes 251 and 252 and the second surface 22 of the light emitting element 20 (the semiconductor stacked body 28 is exposed) The light reflection continuous film 700 is insulated from the electrodes 251 and 252 and the semiconductor stacked body 28. Alternatively, the third portion 730 and the fourth portion 740 (portions that cover the electrodes 251 and 252 and the second surface 22 of the light emitting element 20) of the light reflection continuous film 700 are removed, and the light reflection continuous film 700 is removed. Further, a short circuit between the electrodes 251 and 252 and the semiconductor stacked body 28 may be prevented.

  In addition, when two or more reflective films selected from the group consisting of the first reflective film, the second reflective film, the third reflective film, and the fourth reflective film are made of the same material, the reflective film made of the same material Can be formed simultaneously. For example, when the first reflective film and the second reflective film are metal films, and the third reflective film and the fourth reflective film are dielectric multilayer films or layers of insulating fine particles, the first reflective film and the second reflective film The two reflection films, the third reflection film, and the fourth reflection film can be manufactured in the same process.

Step 1-4. Formation of the covering member 400 The light reflecting continuous film 700 (the first portion 710 and the second portion 720) covering the outer surface 33 of the translucent member 30 and the second surface 520 of the wavelength conversion sheet 500 is covered with the covering member 400 (FIG. 6 (b), FIG. 9 (a)). The covering member 400 becomes the covering member 40 after being separated into individual light emitting devices 10. Further, the light reflecting continuous film 700 (the third portion 730 and the fourth portion 740) that covers the exposed portion of the second surface 22 of the light emitting element 20 and the side surfaces 251 c and 252 c of the electrodes 251 and 252 is also covered with the covering member 400. Is preferred. The thickness (dimension in the −z direction) of the covering member 400 is set so that the light reflecting continuous film 700 (the fifth portion 750) covering the surfaces 251 s and 252 s of the electrodes 251 and 252 of the light emitting element 20 is also covered with the covering member 400. Adjust. As shown in FIG. 9A, the plurality of translucent members 30 provided around the plurality of light emitting elements 20 arranged on the wavelength conversion sheet 500 are covered with one continuous covering member 400.
Thereafter, the covering member 400 and the fifth portion 750 of the light reflecting continuous film 700 are removed by a known processing method so that the electrodes 251 and 252 of the light emitting element 20 are exposed (FIGS. 7A and 9B). ).

Step 1-5. Separation of Light-Emitting Device 10 A covering member along broken lines X ₁ , broken lines X ₂ , broken lines X ₃ and broken lines X ₄ (FIGS. 7B and 9B) passing through the middle of adjacent light emitting elements 20 400, the light reflection continuous film 700, and the wavelength conversion sheet 500 are cut with a dicer or the like. Thereby, it divides into each light-emitting device 10 (FIG.7 (b), FIG.9 (c)). In this manner, a plurality of light emitting devices 10 including one light emitting element 20 can be manufactured at the same time.

  In addition, in the light emitting device 10 that has been separated, when the translucent member 30 is exposed on the side surface 13 of the light emitting device 10 (the side surface 40c of the covering member 40 illustrated in FIG. 9C), light emission from the light emitting element 20 is performed. The light leaks in the lateral direction from the side surface 13 of the light emitting device 10 through the translucent member 30. Therefore, it is preferable to adjust the interval between adjacent light emitting elements 20, the viscosity of the translucent member 30, and the like so that the translucent member 30 is not exposed from the side surface 13 of the light emitting device 10.

  According to this manufacturing method, the liquid resin material 300 is applied in an island shape on the wavelength conversion sheet 500, and the light emitting element 20 is disposed, thereby simultaneously bonding the light emitting element 20 and forming the light transmissive member 30. be able to. Thereby, mass productivity can be improved. .

<Second production method>
The second manufacturing method of the light emitting device 10 according to the present embodiment will be described with reference to FIGS. It differs from the first manufacturing method in that the light emitting element 20 is fixed on the wavelength conversion sheet 500 before the liquid resin material 300 is formed. About another point, it is the same as that of the 1st manufacturing method. In addition, description is abbreviate | omitted about the process similar to a 1st manufacturing method.

Step 2-1. Fixing the light emitting element 20 The light emitting element 20 is disposed on the second surface 520 of the wavelength conversion sheet 500 (FIG. 10A, FIG. 11A). At this time, the first surface 21 of the light emitting element 20 is disposed to face the second surface 52 of the wavelength conversion member 50. The wavelength conversion sheet 500 becomes the wavelength conversion member 50 after being separated into individual light emitting devices 10. A plurality of light emitting elements 20 are arranged on a single wavelength conversion sheet 500 using a relatively large wavelength conversion sheet 500. Adjacent light emitting elements 20 are arranged at a predetermined interval. If the interval between adjacent light emitting elements 20 is too wide, the number of light emitting devices 10 that can be formed at the same time decreases, and the efficiency of mass production of the light emitting devices 10 deteriorates. Therefore, the light emitting elements 20 are arranged at appropriate intervals. Is desirable.
The light emitting element 20 can be fixed to the wavelength conversion member 50 with a translucent adhesive or the like. Further, when the wavelength conversion member 50 itself has adhesiveness (in a semi-cured state or the like), the wavelength conversion member 50 may be fixed without using an adhesive.

Step 2-2. Formation of Translucent Member 30 The translucent member 30 is formed so as to cover a part of the side surface 23 of the light emitting element 20 and a region near the light emitting element 20 in the second surface 52 of the wavelength conversion member 50. (FIG. 10 (b), FIG. 11 (b)). A liquid resin material 30L, which is a raw material of the translucent member 30, is applied along the boundary between the light emitting element 20 and the wavelength conversion member 50 using a dispenser or the like. The liquid resin material 30L formed around the light emitting element 20 and the liquid resin material 30L formed around the light emitting element 20 disposed adjacent to the light emitting element 20 are not in contact with each other. 30L is formed. The liquid resin material 30L spreads on the wavelength conversion member 50 and crawls up the side surface 23 of the light emitting element 20 by surface tension. Thereafter, the liquid resin material 30L is cured by heating or the like to obtain the translucent member 30.

Thereafter, step 1-3 of the first manufacturing method. The light reflecting film 70 is formed in the same manner as in Step 1-4. The covering member 400 is formed in the same manner as in Step 1-5. In the same manner as described above, the light emitting device 10 is separated into pieces. Thereby, a plurality of light emitting devices 10 including one light emitting element 20 can be manufactured simultaneously.
According to this manufacturing method, the film-like translucent member 30 t (see FIG. 2) is not formed between the light emitting element 20 and the wavelength conversion member 50. Therefore, the second manufacturing method is suitable when the light emitting element 20 and the wavelength conversion member 50 are desired to be in direct contact, or when a member different from the translucent member 30 is desired to be disposed between them.

<Embodiment 2>
As shown in FIGS. 12 and 13, in the light emitting device 15 according to the present embodiment, the side surface 501 b of the wavelength conversion member 501 is covered with a covering member 403 as compared with the light emitting device 10 according to the first embodiment. And the point that the covering member 403 has a two-layer structure. The other points are the same as in the first embodiment.

  The light emitting device 15 according to the present embodiment includes a light emitting element 20, a wavelength conversion member 501 that covers the first surface 21 of the light emitting element 20, and a translucent member 30 provided on the side surface 23 side of the light emitting element 20. And a covering member 403 that covers the outer surface 33 of the translucent member 30. In the present embodiment, the covering member 403 includes a first covering member 401 that covers the side surface 501 b of the wavelength conversion member 501 and a second covering member 402 that covers the outer surface 33 of the translucent member 30.

  By covering the side surface 501b of the wavelength converting member 501 with the covering member 403 (first covering member 401), light emitted from the light emitting element 20 propagates through the inside of the wavelength converting member 501 and leaks laterally from the side surface 501b. Can be suppressed. Most of the light emitted from the light emitting device 15 is extracted from the first surface (upper surface) 16 that functions as the light emitting surface of the light emitting device 15. That is, since the light from the light emitting device 15 is emitted substantially in the z direction, the directivity of the light of the light emitting device 15 can be improved.

  In the present embodiment, the light reflecting film 70 is formed between the covering member 40 and the outer surface 33 of the translucent member 30, between the covering member 40 and the wavelength conversion member 501, similarly to the first embodiment. 40 and between the side surfaces of the light emitting element 20 electrodes 251 and 252 and between the covering member 40 and the exposed portion of the lower surface of the light emitting element 20. Further, in the present embodiment, it may be formed between the first covering member 401 and the second covering member 402.

Below, the material etc. which are suitable for each structural member of the light-emitting device 10 of Embodiment 1-2 are demonstrated.
(Light emitting element 20)
As the light emitting element 20, for example, a semiconductor light emitting element such as a light emitting diode can be used. The semiconductor light emitting element can include a translucent substrate 27 and a semiconductor stacked body 28 formed thereon.

(Translucent substrate 27)
The light-transmitting substrate 27 of the light-emitting element 20 transmits light emitted from a light-transmitting insulating material such as sapphire (Al ₂ O ₃ ) or spinel (MgAl ₂ O ₄ ) or the semiconductor laminate 28. A semiconductor material to be used (eg, a nitride-based semiconductor material) can be used.

(Semiconductor laminate 28)
The semiconductor stacked body 28 includes a plurality of semiconductor layers. As an example of the semiconductor stacked body 28, three semiconductors including a first conductive type semiconductor layer (for example, an n-type semiconductor layer) 281, a light emitting layer (active layer) 282, and a second conductive type semiconductor layer (for example, a p-type semiconductor layer) 283. Layers can be included (see FIG. 4). The semiconductor layer can be formed from a semiconductor material such as a III-V group compound semiconductor or a II-VI group compound semiconductor, for example. _{Specifically, In X Al Y Ga 1-} X-Y N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) nitride semiconductor material (e.g., InN such, AlN, GaN, InGaN, AlGaN , InGaAlN Etc.) can be used.

(Electrodes 251 and 252)
As the electrodes 251 and 252 of the light emitting element 20, a good electric conductor can be used, and for example, metals such as Cu, Au, Ag, Ni, and Sn are suitable.
Each of the two electrodes 251 and 252 constituting the pair of electrodes can have an arbitrary shape. For example, in the light emitting device 10 illustrated in FIGS. 1 and 2, the electrodes 251 and 252 can be rectangular parallelepiped extending in one direction (y direction). The electrodes 251 and 252 do not have to have the same shape. The two electrodes 251 and 252 can be arbitrarily arranged as long as they are separated from each other. As shown in FIG. 1, in this embodiment, the two electrodes 251 and 252 are arranged in parallel so that the major axis of each electrode coincides with the y direction.

(Translucent member 30)
The translucent member 30 can be formed from a translucent material such as a translucent resin or glass. The translucent resin is particularly preferably a thermosetting translucent resin such as a silicone resin, a silicone-modified resin, an epoxy resin, and a phenol resin. Since the translucent member 30 is in contact with the side surface 23 of the light emitting element 20, it is easily affected by heat generated in the light emitting element 20 during lighting. Since the thermosetting resin is excellent in heat resistance, it is suitable for the translucent member 30. The translucent member 30 preferably has a high light transmittance. Therefore, it is usually preferable that no additive that reflects, absorbs, or scatters light be added to the translucent member 30. However, it may be preferable to add an additive to the translucent member 30 in order to impart desirable characteristics. For example, various fillers may be added to adjust the refractive index of the translucent member 30 or to adjust the viscosity of the translucent member (liquid resin material 300) before curing.

  In plan view of the light emitting device 10, the outer shape of the first surface 31 of the translucent member 30 is at least larger than the outer shape of the second surface 22 of the light emitting element 20. The outer shape of the first surface 31 of the translucent member 30 can be various shapes, for example, a circle as shown in FIG. 1, a rounded rectangle as shown in FIG. 12, and an ellipse or a square. The shape can be a rectangle or the like.

  Moreover, you may determine the external shape of the 1st surface 31 of the translucent member 30 based on other conditions. For example, when the light emitting device 10 is used in combination with an optical lens (secondary lens), the outer shape of the first surface 31 is preferably circular, and the light emitted from the light emitting device 10 is also nearly circular. The light is easily collected by the optical lens. On the other hand, when downsizing of the light emitting device 10 is desired, it is preferable that the outer shape of the first surface 31 is a rounded square, and the size of the upper surface 11 of the light emitting device 10 can be reduced.

(Coating members 40, 403)
The covering members 40 and 403 can be formed from an inorganic material such as a glass material or a resin material, and are particularly preferably formed from a resin material. As the resin material, thermosetting resins such as silicone resins, silicone-modified resins, epoxy resins, and phenol resins are particularly suitable.
It is preferable to add an additive to the covering members 40 and 403 in order to impart desired characteristics. Examples of the additive include a moldability improving agent for improving moldability, a reinforcing material for increasing mechanical strength, and an additive for improving heat resistance. In particular, in order to increase mechanical strength, it is preferable to add carbon black, carbon nanotube, glass fiber or the like.

(Wavelength conversion member 50)
The wavelength conversion member 50 includes a wavelength conversion material such as a phosphor and a translucent material. As the translucent material, translucent resin, glass, or the like can be used. In particular, a translucent resin is preferable, and a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin, or a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin is used. it can. In particular, a silicone resin excellent in light resistance and heat resistance is suitable.

A phosphor that can be excited by light emission from the light emitting element 20 is used. For example, phosphors that can be excited by blue light-emitting elements or ultraviolet light-emitting elements include yttrium-aluminum-garnet phosphors activated with cerium (Ce: YAG); lutetium-aluminum-garnet phosphors activated with cerium (Ce: LAG); nitrogen-containing calcium aluminosilicate phosphor activated with europium and / or chromium (CaO—Al ₂ O ₃ —SiO ₂ ); silicate phosphor activated with europium ((Sr, Ba) ₂ SiO ₄ ); nitride phosphor such as β sialon phosphor, CASN phosphor, SCASN phosphor; KSF phosphor (K ₂ SiF ₆ : Mn); sulfide phosphor, quantum dot phosphor Etc. By combining these phosphors with a blue light emitting element or an ultraviolet light emitting element, light emitting devices of various colors (for example, white light emitting devices) can be manufactured.
The wavelength conversion member 50 may contain various fillers for the purpose of adjusting the viscosity.

  Note that the surface of the light emitting element may be coated with a translucent material that does not include a phosphor instead of the wavelength conversion member 50. Further, this light-transmitting material may contain various fillers for the purpose of adjusting the viscosity.

(Light reflecting film 70 (first reflecting film 71, second reflecting film 72, third reflecting film 73, fourth reflecting film 74))
Each reflective film (the first reflective film 71, the second reflective film 72, the third reflective film 73, and the fourth reflective film 74) constituting the light reflective film 70 is preferably formed from an inorganic material.
Each reflective film can be formed of a metal material, an insulating material, or the like having a high light reflectance. The insulating material includes a dielectric multilayer film in addition to the material itself having a high reflectance. Each material is described in detail below.

-Metal material Examples of the metal material suitable for each reflective film include silver, silver alloy, aluminum, gold, and platinum. In particular, a silver alloy excellent in sulfidation resistance is preferable, and any silver alloy known in the art may be used. The thickness of the reflective film is not particularly limited, and is a thickness that can effectively reflect the light emitted from the light emitting element (for example, about 20 nm to about 1 μm), particularly a thickness of 50 nm or more. Preferably there is.

・ Dielectric multilayer (DBR)
The dielectric multilayer film (DBR) is a reflective film that can selectively reflect light having a predetermined wavelength, and has a structure in which two types of dielectric films having different refractive indexes are alternately stacked with a predetermined thickness. . Specifically, a low refractive index layer and a high refractive index layer are alternately stacked at a thickness of a quarter wavelength of light to be reflected on a base layer made of an oxide film or the like formed arbitrarily. Thereby, the light of the predetermined wavelength can be reflected with high efficiency.
For the dielectric film, for example, at least one oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al can be used, and can be formed by sputtering or CVD. . For example, the low refractive index layer can be made of SiO ₂ and the high refractive index layer can be made of Nb ₂ O ₅ , TiO ₂ , ZrO _2, Ta ₂ O ₅ or the like. Specifically, (Nb ₂ O ₅ / SiO ₂ ) _n (n = 2 to 5) is listed in order from the base layer side.
The total film thickness of DBR can be about 0.2-1 μm.

The light reflecting film may be a layer in which fine particles having a particle size of about 10 to 500 nm are formed.
As the material of the fine particles, titanium oxide, zirconium oxide or the like having a high light reflectance can be preferably used. Examples of the method for forming the fine particles in a layer form include volatilization of the solvent after providing a mixture of the fine particles in a volatile solvent so as to cover the outer surface 33 of the translucent member 30.
Using the insulating fine particles as the light reflecting film is advantageous in that a short circuit does not occur even when the electrodes are formed directly on the surfaces of the electrodes 251 and 252 and the semiconductor stacked body 28, as in the case of using the dielectric multilayer film. . In addition, by using a material having a wide wavelength range that can be reflected, such as titanium oxide, light emitted from the light emitting element 20 and light converted in wavelength by the wavelength conversion member 50 can be used as in the case of using a metal film. The mixed light containing can be reflected efficiently.

  The first to fourth reflective films 71 to 74 may be formed entirely or partially from the same material, or all may be formed from different materials. Different materials may be used in the first to fourth reflective films 71 to 74. For example, the first reflective film 71 is formed of a dielectric multilayer film or insulating fine particles that can reduce the risk of a short circuit or the like in a portion close to the third reflective film 73, and in a portion close to the second reflective film 72. Alternatively, it may be formed of a metal film.

As mentioned above, although some embodiment which concerns on this invention was illustrated, this invention is not limited to embodiment mentioned above, It cannot be overemphasized that it can be made arbitrary, unless it deviates from the summary of this invention. .
The disclosure of the present specification may include the following aspects.
(Aspect 1)
A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting device having
A translucent member formed of a material containing resin, covering at least part of the side surface of the light emitting element, and having a first surface located on the light emitting surface side;
A covering member that covers an outer surface of the translucent member and has a first surface located on the light emitting surface side;
A wavelength conversion member that covers the first surface of the light emitting element, the first surface of the translucent member, and the first surface of the covering member;
Provided between the outer surface of the translucent member and the covering member, provided between the first reflective film made of an inorganic material, the first surface of the covering member and the wavelength conversion member, A light-emitting device comprising: a second reflective film made of an inorganic material;
(Aspect 2)
The light emitting device according to aspect 1, wherein the first reflective film and the second reflective film are made of the same inorganic material.
(Aspect 3)
The light emitting element has an electrode on the second surface side thereof,
The covering member covers a side surface of the electrode and an exposed region of the second surface of the light emitting element where the electrode is not provided,
The light reflecting film is
A third reflective film provided between the side surface of the electrode and the covering member and made of an inorganic material;
The light emitting device according to aspect 1 or 2, further comprising: a fourth reflective film that is provided between the exposed region of the light emitting element and the covering member and is made of an inorganic material.
(Aspect 4)
The light emitting device according to aspect 3, wherein two or more of the first reflective film, the second reflective film, the third reflective film, and the fourth reflective film are made of the same inorganic material.
(Aspect 5)
The light emitting device according to any one of aspects 1 to 4, wherein at least a part of the light reflecting film is made of a dielectric multilayer film.
(Aspect 6)
The light emitting device according to any one of aspects 1 to 5, wherein at least a part of the light reflecting film is made of a metal film.
(Aspect 7)
The light emitting device according to any one of aspects 1 to 6, wherein the covering member includes a resin material containing one or more reinforcing materials selected from the group consisting of carbon black, carbon nanotubes, and glass fibers.
(Aspect 8)
The light emitting device according to any one of aspects 1 to 7, wherein the outer surface of the translucent member is inclined outward from the second surface side of the light emitting element toward the first surface side. .
(Aspect 9)
Arranging the light emitting element on the wavelength conversion member;
Covering the side surface of the light emitting element with a translucent member;
Covering the outer surface of the translucent member with a first reflective film that is an inorganic material;
Covering the wavelength conversion member exposed from the translucent member with a second reflective film that is an inorganic material;
Covering the first reflective film and the second reflective film with a covering member.
(Aspect 10)
The manufacturing method according to aspect 9, wherein the outer surface of the translucent member is inclined outward from the second surface side of the light emitting element toward the first surface side.
(Aspect 11)
The manufacturing method according to aspect 9 or 10, wherein the step of covering with the first reflective film and the step of covering with the second reflective film are performed simultaneously.
(Aspect 12)
The light emitting element has an electrode on the second surface side,
Before the step of covering with the covering member,
Covering the side surface of the electrode with a third reflective film;
A step of covering a region of the second surface of the light emitting element that is not covered with the electrode with a fourth reflective film,
The manufacturing method according to any one of aspects 9 to 11, wherein in the step of covering with the covering member, the covering member further covers the third reflective film and the fourth reflective film.
(Aspect 13)
Two or more reflective films selected from the group consisting of the first reflective film, the second reflective film, the third reflective film, and the fourth reflective film are made of the same material,
The manufacturing method according to aspect 12, wherein the reflective films made of the same material are formed simultaneously.

10, 15 Light emitting device 11 First surface (upper surface) of light emitting device
20 Light emitting element 21 First surface (upper surface) of light emitting element
22 Second surface (lower surface) of light-emitting element
DESCRIPTION OF SYMBOLS 23 Side surface of light emitting element 28 Semiconductor laminated body 251,252 Electrode 30 Translucent member 33 Outer surface of translucent member 40 Cover member 50 Wavelength conversion member 70 Light reflection film

Claims (13)

A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting device having
A translucent member formed of a material containing a resin and covering at least a part of the side surface of the light emitting element;
A wavelength conversion member covering the first surface of the light emitting element;
A first covering member covering a side surface of the wavelength conversion member;
A second covering member covering an outer surface of the translucent member and spaced from the wavelength conversion member;
A light reflecting film in contact with the inner surface of the second covering member;
A light emitting device comprising:   The light emitting device according to claim 1, wherein an upper surface of the second covering member is located at a position lower than a first surface of the light emitting element.   The light emitting device according to claim 1, wherein an outer surface of the first covering member and an outer surface of the second covering member are the same surface.   The light emitting device according to claim 1, wherein the first covering member has the same thickness as the wavelength conversion member.   5. The light emitting device according to claim 1, wherein a part of the wavelength conversion member is disposed on an upper surface of the second covering member via the light reflecting film.   The light-emitting device according to claim 1, wherein the light reflection film is in contact with the wavelength conversion member.   The light emitting device according to claim 1, wherein the light reflecting film is further disposed below the light emitting element.   The light emitting device according to claim 1, wherein the translucent member is disposed between the first surface of the light emitting element and the wavelength conversion member.   The light emitting device according to claim 1, wherein the light emitting element has an electrode on the second surface, and the light reflecting film is in contact with the electrode.   The light-emitting device according to claim 1, wherein the light reflecting film is made of an inorganic material.   The light-emitting device according to claim 1, wherein the light reflecting film is made of an insulating material.   The light-emitting device according to claim 1, wherein the light reflection film is made of a metal material.   The light-emitting device according to claim 1, wherein the light reflecting film includes titanium oxide.

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