JP6696550B2 - Light emitting device - Google Patents

Description

  The present disclosure relates to a light emitting device.

  There is known a light emitting device in which a side surface of a light emitting element is covered with a covering member formed of a light reflecting resin material (for example, Patent Documents 1 to 3). In these light emitting devices, a translucent member is arranged between the light emitting element and the covering member, and light emitted from the side surface of the light emitting element is extracted to the light emitting surface side of the light emitting device through the translucent member. , The light extraction efficiency of the light emitting device is improved. The covering member has a function of retaining the strength of the light emitting device instead of the housing, and a function of reflecting the light that has passed through the transparent member and reached the covering member.

  Further, there is known a light emitting device that arranges a wavelength conversion member on the light emitting surface side of the light emitting device to convert the wavelength of a part of light from the light emitting element to emit a light emission color different from that of the light emitting element (for example, Patent Document 1). References 1-3). The wavelength conversion member is provided so as to cover at least the light extraction surface side of the light emitting element and the translucent member so that light emitted from the light emitting element in the light emitting surface direction and light emitted from the light emitting element through the translucent member. The wavelength of light emitted in the plane direction can be converted. Further, the wavelength conversion member can be formed so as to cover at least a part of the covering member (for example, Patent Documents 1 to 3). A part of the light incident on the wavelength conversion member has its wavelength converted and scattered by the phosphor in the wavelength conversion member, and a part of the scattered light is reflected by the covering member while Propagate throughout. Thereby, the light emitting surface of the light emitting device can be enlarged by increasing the area of the wavelength conversion member.

JP 2012-227470 A JP, 2013-012545, A International Publication No. 2013/005646

  However, depending on the material and thickness of the covering member, there is a possibility that the covering member may not sufficiently reflect light.

  Therefore, it is an object of one embodiment of the present invention to provide a light emitting device with good light extraction and a method for manufacturing the same.

A light emitting device according to an embodiment of the present invention is
A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting element having
A translucent member formed of a material containing a resin, covering at least a part of the side surface of the light emitting element, and having a first surface located on the light emitting surface side;
A covering member that covers an outer surface of the translucent member and has a first surface located on the light emitting surface side;
A wavelength conversion member that covers the first surface of the light emitting element, the first surface of the translucent member, and the first surface of the covering member;
Provided between the outer surface of the translucent member and the covering member, and provided between the first reflecting film made of an inorganic material and the first surface of the covering member and the wavelength conversion member, And a light reflection film including a second reflection film made of an inorganic material.

A method of manufacturing a light emitting device according to an embodiment of the present invention is
A step of disposing a light emitting element on the wavelength conversion member,
Covering the side surface of the light emitting element with a transparent member,
Covering the outer surface of the translucent member with a first reflective film that is an inorganic material;
Covering the wavelength conversion member exposed from the translucent member with a second reflective film that is an inorganic material;
Covering the first reflective film and the second reflective film with a covering member.

  According to the embodiment of the present invention, it is possible to reduce the thickness of the covering member while suppressing a decrease in mechanical strength and an increase in light leakage.

FIG. 1 is a schematic plan view of the light emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view taken along the line AA of FIG. FIG. 3 is a schematic sectional view taken along the line AA of FIG. FIG. 4 is an enlarged cross-sectional view of the light emitting device shown in FIG. 5A and 5B are schematic plan views for explaining the first method for manufacturing the light emitting device according to the first embodiment. FIG. 6A and FIG. 6B are schematic plan views for explaining the first method for manufacturing the light emitting device according to the first embodiment. 7A and 7B are schematic plan views for explaining the first manufacturing method of the light emitting device according to the first embodiment. 8A is a schematic sectional view taken along the line BB of FIG. 5A, and FIG. 8B is a schematic sectional view taken along the line C-C of FIG. 5B. FIG. 6C is a schematic sectional view taken along the line D-D of FIG. 9A is a schematic sectional view taken along the line EE of FIG. 6B, FIG. 9B is a schematic sectional view taken along the line FF of FIG. 7A, and FIG. FIG. 7C is a schematic sectional view taken along the line G-G in FIG. 7B. 10A and 10B are schematic plan views for explaining the second method for manufacturing the light emitting device according to the first embodiment. 11A is a schematic cross-sectional view taken along the line HH of FIG. 10A, and FIG. 11B is a schematic cross-sectional view taken along the line I-I of FIG. 10B. FIG. 12 is a schematic plan view of the light emitting device according to the second embodiment. FIG. 13 is a schematic cross-sectional view taken along the line JJ of FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, a term indicating a specific direction or position (for example, “upper”, “lower”, “right”, “left” and another term including those terms) is used as necessary. .. The use of those terms is for facilitating the understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of the terms. Further, the portions having the same reference numerals appearing in a plurality of drawings indicate the same portions or members.

<Embodiment 1>
The light emitting device 10 according to the present embodiment shown in FIGS. 1 and 2A includes a light emitting element 20, a translucent member 30 provided on the side surface 23 side of the light emitting element 20, and a translucent member 30. And a covering member 40 that covers the outer surface 33. The light emitting device 10 may include the wavelength conversion member 50 on the first surface (upper surface) 11 side that functions as a light emitting surface. The wavelength conversion member 50 covers the first surface (upper surface) 21 of the light emitting element 20, the first surface (upper surface) 31 of the translucent member 30, and the first surface (upper surface) 41 of the covering member 40. There is. The light reflection film 70 is provided between the covering member 40 and the translucent member 30 and between the covering member 40 and the wavelength conversion member 50.
By providing the light reflection film 70 between the covering member 40 and the translucent member 30, the light passing through the translucent member 30 from the light emitting element 20 is reflected before the light reaches the covering member 40. It can be reflected by the film 70. Further, by providing the light reflection film 70 between the covering member 40 and the wavelength conversion member 50, before the light propagating inside the wavelength conversion member 50 reaches the covering member 40, the light is converted into the light. It can be reflected by the reflective film 70. Therefore, the covering member 40 can be arbitrarily designed without considering the decrease in the light reflectance of the covering member 40.

As shown in FIG. 4, the light emitting element 20 may include a transparent substrate 27 and a semiconductor laminated body 28 formed on the lower surface side of the transparent substrate 27. The light emitting element 20 includes a first surface (upper surface) 21 on the transparent substrate 27 side, a second surface (lower surface) 22 on the semiconductor laminated body 28 side facing the first surface 21, and a first surface. 21 and a plurality of side surfaces 23 located between the second surface 22 and the second surface 22. The first surface 21 is located on the light emitting surface side of the light emitting device 10.
As the transparent substrate 27, for example, a sapphire substrate can be used.
A pair of electrodes 251 and 252 for energizing the light emitting element 20 are provided on the second surface (lower surface) 22 side of the light emitting element 20. In the present specification, the “second surface 22” of the light emitting element 20 refers to the surface of the light emitting element 20 in the state where the electrodes 251 and 252 are not included. Therefore, in the present embodiment, the second surface 22 coincides with the lower surface of the semiconductor stacked body 28.

  Referring again to FIG. 2, the side surface 23 of the light emitting element 20 is covered with the translucent member 30. The translucent member 30 guides the light emitted from the side surface 23 of the light emitting element 20 toward the light emitting surface (first surface) 11 of the light emitting device 10. By providing the translucent member 30 between the side surface 23 of the light emitting element 20 and the covering member 40, the light reaching the side surface 23 of the light emitting element 20 can be extracted from the side surface 23 to the translucent member 30. .. Thus, by providing the translucent member 30 on the side surface 23 of the light emitting element 20, it is possible to suppress the loss of light and improve the light extraction efficiency of the light emitting device 10.

  The outer surface 33 of the translucent member 30 is preferably inclined outward from the second surface 22 side of the light emitting element 20 toward the first surface 21 side. That is, in the cross-sectional view as shown in FIG. 2, it is preferable that the left and right outer surfaces 33 of the translucent member 30 expand toward the light emitting surface (first surface) 11 of the light emitting device 10. The light emitted from the side surface 23 of the light emitting element 20 and propagating in the translucent member 30 reaches the inclined outer surface 33. Here, when the light is reflected by the light reflecting film 70 that covers the outer surface 33, the light can be directed toward the first surface 11 of the light emitting device 10. Thereby, the light extraction efficiency of the light emitting device 10 can be improved.

In the cross-sectional view of the light emitting element 20 shown in FIG. 2, the angle formed between the side surface 23 and the outer surface 33 of the translucent member 30 (this is referred to as “tilt angle θ ₁ ”) is 40 ° to 60 °. It can preferably be 45 °, for example. When the inclination angle θ ₁ is large, the outer shape of the first surface 31 of the translucent member 30 (depicted as a substantially circular shape in FIG. 1) is large, and the light extraction efficiency is improved. On the other hand, when the inclination angle θ ₁ is small, the outer shape of the first surface 31 is small, and thus the size of one side of the light emitting device 10 in a top view can be reduced (that is, the light emitting device 10 can be downsized). Considering the light extraction efficiency and the miniaturization of the light emitting device 10, the inclination angle θ ₁ = 45 ° is optimal.

  When the side surface 23 of the light emitting element 20 is inclined with respect to the second surface 22, the effect of the translucent member 30 becomes remarkable. For example, in the manufacturing process of the light emitting element 20, when the light emitting element 20 is singulated by cleaving the translucent substrate 27 (for example, a sapphire substrate), the side surface 23 of the light emitting element 20 is different from the second surface 22. May not be vertical. For example, in cross-sectional view, the outer shape of the light emitting element 20 can be a parallelogram (see FIG. 3) or a trapezoid. The first surface 21 and the second surface 22 of the light emitting element 20 are parallel to each other, the two opposing side surfaces 23 are parallel to each other, and each side surface 23 is inclined with respect to the first surface 21 and the second surface 22. . When the side surface 23 of such a light emitting element 20 is directly covered with the covering member 40 without providing the translucent member 30, the angle formed between the one side surface 23 and the second surface 22 becomes an obtuse angle. The light reflected by the covering member 40 that covers the one side surface 23 can be extracted as it is toward the first surface 21 of the light emitting element 20 from the light emitting surface (first surface 11) of the light emitting device 10 to the outside. However, since the other side surface 23 forms an acute angle with the second surface 22, the light reflected by the covering member 40 that covers the other side surface 23 is the second surface 22 of the light emitting element 20. The intensity of light may be attenuated in the light emitting element 20 before being extracted from the inside of the light emitting element 20. By covering the other side surface 23 with the translucent member 30, the light reaching the other side surface 23 is not reflected on the second surface 22 side, but passes through the translucent member 30 and the light of the first side of the light emitting device 10 is reflected. It can be taken out to the surface 11 side of 1.

The semiconductor stacked body 28 includes three semiconductor layers of a first conductive type semiconductor layer 281, a light emitting layer 282 and a second conductive type semiconductor layer 283 (FIG. 4). Referring to FIG. 2, the light emitted from the light emitting element 20 (more precisely, the light emitting layer 282 of the semiconductor laminated body 28 shown in FIG. 4) is emitted from the semiconductor laminated body 28 through the transparent substrate 27 or the semiconductor laminated body. The light is extracted from the body 28 through the side surface 23 of the light emitting element 20 and the translucent member 30 to the first surface 11 side of the light emitting device 10. The translucent member 30 covers at least a part of the side surface 23 of the light emitting element 20.
When the translucent member 30 covers a part of the side surface 23, of the three semiconductor layers 281, 282, 283 exposed on the side surface of the semiconductor stacked body 28, the side surface of the first conductivity type semiconductor layer 281 and the light emitting layer. It is preferable that the side surface of 282 is entirely covered with the translucent member 30.

  As shown in FIG. 2, the translucent member 30 may cover the entire first surface 21 of the light emitting element 20. The film-shaped translucent member 30t existing on the first surface 21 of the light emitting element 20 can protect the first surface 21 of the light emitting element 20. In addition, the film-shaped translucent member 30t can also function as an adhesive member that adheres the first surface 21 and the wavelength conversion member 50.

  As shown in FIG. 2, the covering member 40 covers the outer surface 33 of the translucent member 30. A light reflection film 70 (first reflection film 71) described later is arranged between the covering member 40 and the outer surface 33 of the translucent member 30. Even though the covering member 40 is formed of a material having a high light reflectance (light-reflecting material), it is formed of a material having a low light reflectance, for example, a high light transmittance or a high light absorption rate. Good. The covering member 40 further covers the side surfaces 251c and 252c of the electrodes 251 and 252 of the light emitting element 20 and the portion of the second surface (lower surface) 22 of the light emitting element 20 where the electrodes 251 and 252 are not provided. May be.

  The wavelength conversion member 50 provided on the first surface 11 side of the light emitting device 10 includes a first surface (upper surface) 21 of the light emitting element 20, a first surface (upper surface) 31 of the translucent member 30, and a coating. It covers the first surface (upper surface) 41 of the member 40. The first surfaces (upper surface) 21, 31, 41 are located on the light emitting surface (first surface 11) side of the light emitting device 10. A light reflection film 70 (second reflection film 72) described below is arranged between the wavelength conversion member 50 and the first surface 41 of the covering member 40.

  The light emitting device 10 includes a light reflection film 70 for reflecting the light emitted by the light emitting element 20 and the light wavelength-converted by the wavelength conversion member 50 toward the light emitting surface (the first surface 11 of the light emitting device 10). be able to. The light reflection film 70 may include a first reflection film 71, a second reflection film 72, a third reflection film 73, and a fourth reflection film 74. The first to fourth reflective films will be individually described.

(First reflective film 71)
A first reflective film 71 is provided between the outer surface 33 of the translucent member 30 and the covering member 40. Thereby, the light extracted from the side surface 23 of the light emitting element 20 to the translucent member 30 can be reflected by the first reflective film 71 and extracted from the first surface (upper surface) 11 side of the light emitting device 10. ..

  When the first reflective film 71 is not provided, the outer surface 33 of the translucent member 30 is covered with the covering member 40. By using a material having a high light reflectance (for example, a white resin material) for the covering member 40, it is possible to reflect light by the covering member 40 that covers the outer surface 33 of the translucent member 30. However, when the wall thickness of the covering member 40 is thin, there is a possibility that part of the light may pass through the covering member 40. Further, as the additive to be added to the covering member 40, one that reduces the light reflectance cannot be selected. For example, since carbon black is black and absorbs light, when carbon black is added to the covering member 40, a part of the light reaching the outer surface 33 of the translucent member 30 may be absorbed by the covering member 40, and thus the light emitting device. The light extraction efficiency of 10 may decrease.

  However, by providing the first reflective film 71 between the translucent member 30 and the covering member 40, substantially all the light reaching the outer surface 33 of the translucent member 30 is reflected by the first reflective film 71. , Does not reach the covering member 40. Therefore, it is possible to suppress a decrease in the light extraction efficiency of the light emitting device 10 (due to the low light reflectance of the covering member 40). Thereby, for example, an arbitrary additive (for example, an additive such as carbon black) can be added to the covering member 40.

(Second reflective film 72)
A second reflective film 72 is provided between the first surface 41 of the covering member 40 and the second surface 52 of the wavelength conversion member 50. As a result, the light that has been wavelength-converted by the wavelength conversion member 50 and then travels in the direction of the first surface 41 of the covering member 40 is reflected by the second reflective film 72 and is extracted from the first surface 11 side of the light emitting device 10. You can

The light emitted from the light emitting element 20 enters the wavelength conversion member 50 from the upper surface 21 of the light emitting element 20 through the film-shaped transparent member 30t or from the upper surface 31 of the transparent member 30. The wavelength conversion member 50 contains a wavelength conversion material such as a phosphor, and the wavelength of the light is converted by irradiating the wavelength conversion material with light. At this time, the wavelength-converted light is scattered by the wavelength conversion material, and a part thereof goes toward the second surface (lower surface) 52 of the wavelength conversion member 50.
When the second reflection film 72 is not provided, a part of the scattered light goes to the first surface (upper surface) 41 of the covering member 40 that contacts the second surface 52 of the wavelength conversion member 50. It is possible to reflect the light on the first surface 41 of the covering member 40 by using a material having a high light reflectance (for example, a white resin material) for the covering member 40. However, when an additive such as carbon black that can reduce the light reflectance is added to the covering member 40, a part of the light reaching the second surface 52 of the wavelength conversion member 50 may be absorbed by the covering member 40. The light extraction efficiency of the light emitting device 10 is reduced.

  However, by providing the second reflective film 72 between the wavelength conversion member 50 and the covering member 40, substantially all of the light reaching the first surface 41 of the covering member 40 is reflected by the second reflective film 72. , Does not reach the covering member 40. Therefore, the decrease in the light extraction efficiency of the light emitting device 10 (due to the low light reflectance of the coating member 40) can be suppressed, and the coating member 40 can be provided with any additive (for example, an additive such as carbon black). It can be added.

(Third reflective film 73, fourth reflective film 74)
The third reflective film 73 may be provided between the side surfaces 251c and 252c of the electrodes 251 and 252 and the covering member 40. In addition, the fourth reflective film 74 is provided between the covering member 40 and a region of the second surface 22 of the light emitting element 20 where the electrodes 251 and 252 are not formed (this is referred to as an “exposed region”). May be. Thereby, the light generated in the light emitting layer 282 (see FIG. 4) of the light emitting element 20 and traveling toward the second surface (lower surface) 22 of the light emitting element 20 is efficiently reflected by the third reflective film 73, The light can be taken out of the light emitting element 20 from the side surface 23 or the first surface (top surface) 21 of the light emitting element 20.

  When the third reflective film 73 is not provided, the exposed region of the second surface 22 of the light emitting element 20 is covered with the covering member 40. By using a material having a high light reflectance (for example, a white resin material) for the covering member 40, it is possible to reflect the light traveling toward the exposed area on the second surface 22 of the light emitting element 20. However, if an additive such as carbon black that can reduce the light reflectance is added to the covering member 40, a part of the light reaching the exposed region of the light emitting element 20 may be absorbed by the covering member 40, and thus the light emitting device 10 may be The light extraction efficiency decreases.

  However, by providing the fourth reflective film 74 between the exposed region of the light emitting element 20 and the covering member 40, the light reaching the exposed region of the second surface 22 of the light emitting element 20 is substantially reflected by the fourth reflective film 74. All are reflected and do not reach the covering member 40. Therefore, a decrease in the light extraction efficiency of the light emitting device 10 (due to the low light reflectance of the covering member 40) can be suppressed, and the covering member 40 can be provided with any additive (for example, an additive such as carbon black). It can be added.

  Light directed to the electrodes 251 and 252 provided on the lower surface 22 of the light emitting element 20 is reflected by the electrodes 251 and 252, and thus reaches the third reflective film 73 that covers the side surfaces 251c and 252c of the electrodes 251 and 252. There is virtually no light. However, by providing the third reflective film 73, it is possible to suppress the formation of a gap between the second reflective film 72 and the side surfaces 251c, 252c of the electrodes 251, 252, and improve the light extraction efficiency of the light emitting device 10. be able to.

  As described above, the first reflective film 71, the third reflective film 73, and the fourth reflective film 74 contribute to the reflection of the light generated in the light emitting layer 282 (see FIG. 4) of the light emitting element 20. On the other hand, the second reflective film 72 mainly contributes to the reflection of the light whose wavelength is converted by the wavelength conversion member 50. As described above, the wavelength of light to be reflected by the reflective film differs depending on the portion of the light reflective film 70.

  Further, the first reflective film 71 preferably has high adhesion to the translucent member 30, the second reflective film 72 preferably has high adhesion to the wavelength conversion member 50, and the third reflective film 73 has electrodes. It is preferable that the adhesiveness to the semiconductors 251 and 252 is high, and the adhesiveness of the fourth reflective film 74 to the semiconductor laminated body 28 is high. In this way, the target for which the adhesiveness of the light reflecting film 70 should be improved differs depending on the site of the light reflecting film 70.

  Therefore, the first to fourth reflection films 71 to 74 of the light reflection film 70 can also be formed of preferable materials. However, if all the reflective films are formed by different members, it is necessary to individually provide a process for manufacturing each reflective film, which may lead to a complicated manufacturing process and an increase in manufacturing cost of the light emitting device 10.

  In order to suppress the manufacturing cost, it is preferable that at least two of the first to fourth reflective films 71 to 74 are formed of the same material. As a result, the manufacturing process can be simplified. For example, the first reflective film 71 and the second reflective film 72 can be formed of the same material. Accordingly, the first reflective film 71 and the second reflective film 72 can be formed in the same process, so that the manufacturing process can be simplified. Further, since the first reflective film 71 and the second reflective film 72 can be formed from a continuous film, it is possible to suppress the occurrence of a gap between the first reflective film 71 and the second reflective film 72.

  The light reflecting film 70 can be formed of an inorganic material. For example, it can be formed from an inorganic material such as a dielectric multilayer film or a metal film. Note that a part of the light reflection film 70 may be formed of a dielectric multilayer film and another part thereof may be formed of a metal film, and the entire light reflection film 70 may be formed of either a dielectric multilayer film or a metal film. May be.

Since the dielectric multilayer film is formed of a multilayer film made of an insulating material, it is advantageous in that a short circuit does not occur even if it is formed directly on the surfaces of the electrodes 251, 252 and the semiconductor laminated body 28. Therefore, it is preferable that the third reflective film 73 that can contact the electrodes 251 and 252 and the fourth reflective film 74 that can contact the electrodes 251 and 252 and the semiconductor stacked body 28 be formed of a dielectric multilayer film.
Since the dielectric multilayer film is designed to reflect light of a specific wavelength, the wavelength range of light that can be reflected is narrow. Since the third reflective film 73 and the fourth reflective film 74 mainly contribute to the reflection of the light emitted from the light emitting element 20, even if it is a dielectric multilayer film having a narrow wavelength range that can be reflected, the light is highly efficiently emitted. Can be reflected.

  The metal film has a high reflectance in a relatively wide wavelength range. Therefore, the metal film has no problem of short circuit and is suitable to be formed in a portion where lights having different wavelengths can be mixed. Since the first reflective film 71 and the second reflective film 72 do not contact the electrodes 251, 252 and the semiconductor laminated body 28, they are preferably formed of a metal film. In particular, since the second reflective film 72 needs to reflect the mixed light including the light emitted from the light emitting element 20 and the light whose wavelength is converted by the wavelength conversion member 50, the second reflective film 72 has a wide reflective wavelength range. (For example, a metal film of Ag or Ag alloy) is preferably formed.

  The third reflection film 73 and the fourth reflection film 74 may be formed of a metal film, but in that case, the exposed regions of the side surfaces 251c and 252c of the electrodes 251 and 252 and the second surface 22 of the light emitting element 20 are formed. A transparent insulating film (eg, silicon oxide) is covered, and a third reflecting film 73 and a fourth reflecting film 74 made of a metal film are formed on the insulating film.

  Further, the first to fourth reflection films 71 to 74 may be laminated reflection films formed by laminating a dielectric multilayer film and a metal film. Specifically, the dielectric multilayer film is arranged on the light emitting element 20 side, and the metal film is arranged on the covering member 40 side. Since the dielectric multilayer film is arranged between the semiconductor laminate 28 and the electrodes 251, 252 of the light emitting element 20 and the metal film, a short circuit between the semiconductor laminate 28 and the electrodes 251, 252 and the metal layer can be prevented. In the case of the mixed light including the light emitted from the light emitting element 20 and the light whose wavelength is converted by the wavelength conversion member 50, a part of the light can pass through the laminated reflective film. Part of the light that has passed through the dielectric multilayer film can be reflected by the metal layer that covers the dielectric multilayer film, so that the light can be prevented from reaching the covering member 40.

<First manufacturing method>
A first manufacturing method of the light emitting device 10 according to the present embodiment will be described with reference to FIGS. 5 to 9. In the first manufacturing method, a plurality of light emitting devices 10 can be manufactured at the same time.

Step 1-1. Arrangement of Translucent Member 30 On the second surface 520 of the wavelength conversion sheet 500, the liquid resin material 300 for forming the translucent member 30 is applied in the form of a plurality of separated islands (see FIG. ), FIG. 8 (a)). At this time, using a relatively large wavelength conversion sheet 500, a plurality of island-shaped liquid resin materials 300 are arranged on one wavelength conversion sheet 500. Each liquid resin material 300 provided in an island shape can have any shape in a plan view, and examples thereof include a circle, an ellipse, a square, and a rectangle. Note that if the spacing between the adjacent island-shaped liquid resin materials 300 is too wide, the number of light emitting devices 10 that can be formed at the same time decreases, and the efficiency of mass production of the light emitting devices 10 deteriorates. It is desirable to arrange them at intervals.

Step 1-2. Fixing Light-Emitting Element 20 and Curing Liquid Resin Material 300 As shown in FIGS. 5B and 8B, the light-emitting element 20 is arranged on each island-shaped liquid resin material 300. At this time, the first surface 21 of the light emitting element 20 is arranged so as to face the second surface 520 of the wavelength conversion sheet 500. By only disposing the light emitting element 20 on the island-shaped liquid resin material 300, or by pressing the light emitting element 20 after disposing the liquid resin material 300, the liquid resin material 300 climbs to the side surface 23 of the light emitting element 20 due to surface tension. The outer surface 303 of the liquid resin material 300 (the outer surface 33 of the translucent member 30 later) has a shape spreading downward. Then, the liquid resin material 300 is cured by heating or the like to obtain the translucent member 30.
The shape of the liquid resin material 300 in plan view is deformed by disposing or pressing the light emitting element 20, and the first surface 31 of the translucent member 30 included in the light emitting device 10 that is the final product (see FIGS. 1 and 2). The shape is almost the same as the outer shape of.

  In addition, in this manufacturing method, a part of the liquid resin material 300 exists in a film shape between the wavelength conversion sheet 500 and the light emitting element 20. The film-shaped translucent member 30t formed by curing the film-shaped liquid resin material 300 can also function as an adhesive between the wavelength conversion sheet 500 and the light emitting element 20. The thickness of the film-shaped translucent member 30t is preferably determined in consideration of adhesiveness and heat dissipation of the light emitting device 10. Specifically, when the light emitting device 10 shown in FIGS. 1 and 2 is caused to emit light, heat generated from the wavelength conversion member 50 can be efficiently conducted to the mounting substrate side via the light emitting element 20. In addition, the thickness of the film-shaped translucent member 30t may be, for example, 2 to 30 μm, preferably 4 to 20 μm, and most preferably 5 to 10 μm.

Step 1-3. Formation of Light-Reflecting Continuous Film 700 As shown in FIGS. 6A and 8C, the light-emitting element 20, the translucent member 30, and the wavelength conversion sheet 500 are covered with the light-reflecting continuous film 700. The continuous light-reflecting film 700 becomes the light-reflecting film 70 after being divided into individual light emitting devices 10 (see FIGS. 1 and 2). The continuous light-reflecting film 700 covers the first portion 710 (the first reflecting film 71 after being divided into pieces) that covers the outer surface 33 of the translucent member 30 and the wavelength conversion sheet 500 that is exposed from the translucent member 30. 2 portions 720 (the second reflective film 72 after being divided into individual pieces). The continuous light-reflecting film 700 further includes a third portion 730 (the third reflecting film 73 after being divided into pieces) that covers the side surfaces 251c and 252c of the electrodes 251, 252 and an exposed region of the second surface 22 of the light emitting element 20. And a fourth portion 740 (the fourth reflective film 74 after being divided into individual pieces) that covers the. Further, a fifth portion 750 that covers the surfaces 251s and 252s of the electrodes 251 and 252 may be included.

The first to fourth portions 710 to 740 forming the light reflection continuous film 700 can be formed by a film forming method such as sputtering, CVD, coating or spraying. The first to fourth portions 710 to 740 can be formed individually, but are preferably formed simultaneously.
When the light reflection continuous film 700 is formed of a metal material, an insulating film is formed on the surfaces of the electrodes 251 and 252 and the second surface 22 of the light emitting element 20 (where the semiconductor laminated body 28 is exposed), The light reflection continuous film 700 is insulated from the electrodes 251, 252 and the semiconductor laminated body 28. Alternatively, in the light reflection continuous film 700, the third portion 730 and the fourth portion 740 (portions that cover the electrodes 251, 252 and the second surface 22 of the light emitting element 20) are removed, and the light reflection continuous film 700. Then, a short circuit between the electrodes 251, 252 and the semiconductor laminated body 28 may be prevented.

  When two or more reflection films selected from the group consisting of the first reflection film, the second reflection film, the third reflection film and the fourth reflection film are made of the same material, the reflection films made of the same material. Can be formed simultaneously. For example, when the first reflective film and the second reflective film are metal films and the third reflective film and the fourth reflective film are dielectric multilayer films or layers of insulating fine particles, The second reflective film, the third reflective film, and the fourth reflective film can be manufactured in the same process.

Step 1-4. Formation of coating member 400 The light reflection continuous film 700 (first portion 710, second portion 720) that covers the outer surface 33 of the translucent member 30 and the second surface 520 of the wavelength conversion sheet 500 is covered with the coating member 400 (FIG. 6 (b), FIG. 9 (a)). The covering member 400 becomes the covering member 40 after being divided into individual light emitting devices 10. Further, the light reflection continuous film 700 (third portion 730, fourth portion 740) that covers the exposed portion of the second surface 22 of the light emitting element 20 and the side surfaces 251c, 252c of the electrodes 251, 252 is also covered with the covering member 400. Is preferred. The thickness (dimension in the −z direction) of the covering member 400 is set so that the light reflection continuous film 700 (fifth portion 750) covering the surfaces 251s and 252s of the electrodes 251 and 252 of the light emitting element 20 is also covered with the covering member 400. Adjust. As shown in FIG. 9A, the plurality of translucent members 30 provided around the plurality of light emitting elements 20 arranged on the wavelength conversion sheet 500 are covered with one continuous covering member 400.
Then, the covering member 400 and the fifth portion 750 of the light reflection continuous film 700 are removed by a known processing method so that the electrodes 251 and 252 of the light emitting element 20 are exposed (FIGS. 7A and 9B). ).

Step 1-5. Dividing the light emitting device 10 into individual pieces. A covering member along the broken line X ₁ , the broken line X ₂ , the broken line X ₃ and the broken line X ₄ (FIGS. 7B and 9B) that pass through the middle of the adjacent light emitting elements 20. 400, the light reflection continuous film 700, and the wavelength conversion sheet 500 are cut with a dicer or the like. As a result, the individual light emitting devices 10 are separated (FIGS. 7B and 9C). In this way, it is possible to simultaneously manufacture a plurality of light emitting devices 10 each including one light emitting element 20.

  In the individual light emitting device 10, when the translucent member 30 is exposed on the side surface 13 of the light emitting device 10 (the side surface 40c of the covering member 40 shown in FIG. 9C), the light emitted from the light emitting element 20 is emitted. The light leaks laterally from the side surface 13 of the light emitting device 10 through the translucent member 30. Therefore, it is preferable to adjust the distance between the adjacent light emitting elements 20 and the viscosity of the transparent member 30 so that the transparent member 30 is not exposed from the side surface 13 of the light emitting device 10.

  According to this manufacturing method, the light emitting element 20 is arranged on the wavelength conversion sheet 500 on which the liquid resin material 300 is applied in an island shape, whereby the light emitting element 20 is bonded and the translucent member 30 is formed at the same time. be able to. Thereby, mass productivity can be improved. ..

<Second manufacturing method>
A second manufacturing method of the light emitting device 10 according to the present embodiment will be described with reference to FIGS. This is different from the first manufacturing method in that the light emitting element 20 is fixed on the wavelength conversion sheet 500 before the liquid resin material 300 is formed. The other points are similar to those of the first manufacturing method. Note that description of steps similar to those of the first manufacturing method is omitted.

Step 2-1. Fixing Light-Emitting Element 20 The light-emitting element 20 is arranged on the second surface 520 of the wavelength conversion sheet 500 (FIGS. 10A and 11A). At this time, the first surface 21 of the light emitting element 20 is arranged so as to face the second surface 52 of the wavelength conversion member 50. The wavelength conversion sheet 500 becomes the wavelength conversion member 50 after being divided into individual light emitting devices 10. Using the relatively large wavelength conversion sheet 500, a plurality of light emitting elements 20 are arranged on one wavelength conversion sheet 500. Adjacent light emitting elements 20 are arranged with a predetermined gap. If the space between the adjacent light emitting elements 20 is too wide, the number of the light emitting devices 10 that can be formed at the same time decreases, and the efficiency of mass production of the light emitting devices 10 deteriorates. Therefore, the light emitting elements 20 are arranged at appropriate intervals. Is desirable.
The light emitting element 20 can be fixed to the wavelength conversion member 50 with a translucent adhesive or the like. When the wavelength conversion member 50 itself has adhesiveness (when it is in a semi-cured state or the like), it may be fixed without using an adhesive.

Step 2-2. Formation of Translucent Member 30 The translucent member 30 is formed so as to cover a part of the side surface 23 of the light emitting element 20 and a region of the second surface 52 of the wavelength conversion member 50 in the vicinity of the light emitting element 20. (FIG.10 (b), FIG.11 (b)). A liquid resin material 30L which is a raw material of the translucent member 30 is applied along the boundary between the light emitting element 20 and the wavelength conversion member 50 using a dispenser or the like. The liquid resin material 30L formed around a certain light emitting element 20 and the liquid resin material 30L formed around the light emitting element 20 arranged adjacent to the light emitting element 20 do not come into contact with each other. Form 30 L. The liquid resin material 30L spreads over the wavelength conversion member 50 and also creeps up on the side surface 23 of the light emitting element 20 due to surface tension. After that, the liquid resin material 30L is cured by heating or the like to obtain the translucent member 30.

Then, steps 1-3 of the first manufacturing method. The light reflection film 70 is formed in the same manner as in step 1-4. The covering member 400 is formed in the same manner as in step 1-5. Similarly, the light emitting device 10 is divided into individual pieces. Thereby, a plurality of light emitting devices 10 each including one light emitting element 20 can be simultaneously manufactured.
According to this manufacturing method, the film-shaped translucent member 30t (see FIG. 2) is not formed between the light emitting element 20 and the wavelength conversion member 50. Therefore, the second manufacturing method is suitable for directly contacting the light emitting element 20 and the wavelength conversion member 50, or for disposing a member different from the translucent member 30 between them.

<Second Embodiment>
As shown in FIGS. 12 and 13, in the light emitting device 15 according to the present embodiment, the side surface 501b of the wavelength conversion member 501 is covered with the covering member 403 as compared with the light emitting device 10 according to the first embodiment. The difference is that the covering member 403 has a two-layer structure. The other points are similar to those of the first embodiment.

  The light emitting device 15 according to the present embodiment includes a light emitting element 20, a wavelength conversion member 501 that covers the first surface 21 of the light emitting element 20, and a translucent member 30 provided on the side surface 23 side of the light emitting element 20. , And a covering member 403 that covers the outer surface 33 of the translucent member 30. In the present embodiment, the covering member 403 includes a first covering member 401 that covers the side surface 501b of the wavelength conversion member 501 and a second covering member 402 that covers the outer surface 33 of the translucent member 30.

  By covering the side surface 501b of the wavelength conversion member 501 with the covering member 403 (first covering member 401), light emitted from the light emitting element 20 propagates inside the wavelength conversion member 501 and leaks laterally from the side surface 501b. Can be suppressed. Most of the light emitted from the light emitting device 15 is extracted from the first surface (upper surface) 16 that functions as a light emitting surface of the light emitting device 15. That is, since the light from the light emitting device 15 is emitted substantially in the z direction, it is possible to enhance the directivity of the light of the light emitting device 15.

  In the present embodiment, the light reflection film 70 is provided between the covering member 40 and the outer surface 33 of the translucent member 30, between the covering member 40 and the wavelength conversion member 501, and in the covering member, as in the first embodiment. 40 and the side surfaces of the electrodes 251 and 252 of the light emitting element 20, and between the covering member 40 and the exposed portion of the lower surface of the light emitting element 20. Further, in the present embodiment, it may be formed between the first covering member 401 and the second covering member 402.

Materials suitable for the constituent members of the light emitting device 10 according to the first and second embodiments will be described below.
(Light emitting element 20)
As the light emitting element 20, for example, a semiconductor light emitting element such as a light emitting diode can be used. The semiconductor light emitting device may include a transparent substrate 27 and a semiconductor stacked body 28 formed thereon.

(Translucent substrate 27)
The translucent substrate 27 of the light emitting element 20 transmits a translucent insulating material such as sapphire (Al ₂ O ₃ ) or spinel (MgAl ₂ O ₄ ), or light emitted from the semiconductor laminated body 28. A semiconductor material (for example, a nitride-based semiconductor material) can be used.

(Semiconductor laminate 28)
The semiconductor stacked body 28 includes a plurality of semiconductor layers. As an example of the semiconductor stacked body 28, three semiconductors of a first conductive type semiconductor layer (for example, n-type semiconductor layer) 281, a light emitting layer (active layer) 282, and a second conductive type semiconductor layer (for example, p-type semiconductor layer) 283 are provided. It may include layers (see Figure 4). The semiconductor layer can be formed of a semiconductor material such as a III-V group compound semiconductor or a II-VI group compound semiconductor. Specifically, nitride-based semiconductor materials such as In _X Al _Y Ga _1-X-Y N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) (for example, InN, AlN, GaN, InGaN, AlGaN, InGaAlN). Etc.) can be used.

(Electrodes 251, 252)
As the electrodes 251 and 252 of the light emitting element 20, a good electrical conductor can be used, and metals such as Cu, Au, Ag, Ni, and Sn are preferable.
Each of the two electrodes 251 and 252 forming the pair of electrodes can have any shape. For example, in the light emitting device 10 shown in FIGS. 1 and 2, the electrodes 251 and 252 can be rectangular parallelepipeds extending in one direction (y direction). The electrodes 251 and 252 do not have to have the same shape. The two electrodes 251 and 252 can be arbitrarily arranged as long as they are separated from each other. As shown in FIG. 1, in the present embodiment, the two electrodes 251 and 252 are arranged in parallel so that the major axis of each electrode coincides with the y direction.

(Translucent member 30)
The translucent member 30 can be formed of a translucent material such as translucent resin or glass. The translucent resin is preferably a thermosetting translucent resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin. Since the translucent member 30 is in contact with the side surface 23 of the light emitting element 20, it is easily affected by the heat generated in the light emitting element 20 during lighting. Since the thermosetting resin has excellent heat resistance, it is suitable for the translucent member 30. It is preferable that the translucent member 30 has a high light transmittance. Therefore, it is usually preferable that no additive that reflects, absorbs, or scatters light is added to the translucent member 30. However, in some cases it may be preferable to add additives to the translucent member 30 in order to impart the desired properties. For example, various fillers may be added to adjust the refractive index of the translucent member 30 or to adjust the viscosity of the translucent member (liquid resin material 300) before curing.

  In a plan view of the light emitting device 10, the outer shape of the first surface 31 of the translucent member 30 is at least larger than the outer shape of the second surface 22 of the light emitting element 20. The outer shape of the first surface 31 of the translucent member 30 can be various shapes, for example, a circle as shown in FIG. 1, a square with rounded corners as shown in FIG. 12, and an oval or a square. , A rectangle or the like.

  Further, the outer shape of the first surface 31 of the translucent member 30 may be determined based on other conditions. For example, when the light emitting device 10 is used in combination with an optical lens (secondary lens), it is preferable that the outer shape of the first surface 31 is circular, because the light emitted from the light emitting device 10 is also close to circular. , It becomes easier to collect light by the optical lens. On the other hand, when miniaturization of the light emitting device 10 is desired, it is preferable that the outer shape of the first surface 31 is a square with rounded corners, and the size of the upper surface 11 of the light emitting device 10 can be reduced.

(Coating members 40, 403)
The covering members 40 and 403 can be formed of an inorganic material such as a glass material or a resin material, and particularly preferably formed of a resin material. As the resin material, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin is particularly suitable.
Additives are preferably added to the coating members 40 and 403 in order to impart desired properties. Examples of the additive include a moldability improving agent for improving moldability, a reinforcing material for increasing mechanical strength, and an additive for improving heat resistance. In particular, it is preferable to add carbon black, carbon nanotubes, glass fibers or the like in order to increase the mechanical strength.

(Wavelength conversion member 50)
The wavelength conversion member 50 includes a wavelength conversion material such as a phosphor and a translucent material. As the translucent material, translucent resin, glass or the like can be used. In particular, a light-transmitting resin is preferable, and a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin, a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin can be used. it can. In particular, a silicone resin having excellent light resistance and heat resistance is suitable.

A phosphor that can be excited by the light emitted from the light emitting element 20 is used. For example, as a phosphor that can be excited by a blue light emitting element or an ultraviolet light emitting element, a cerium-activated yttrium-aluminum-garnet-based phosphor (Ce: YAG); a cerium-activated lutetium-aluminum-garnet-based phosphor (Ce: LAG); europium and / or activated nitrogen containing calcium aluminosilicate phosphor chromium _{(CaO-Al 2 O 3 -SiO} 2); europium-activated silicates based phosphor ((Sr, Ba) ₂ SiO ₄ ); β-sialon phosphor, nitride phosphor such as CASN phosphor, SCASN phosphor; KSF phosphor (K ₂ SiF ₆ : Mn); sulfide phosphor, quantum dot phosphor And so on. By combining these phosphors with a blue light emitting element or an ultraviolet light emitting element, a light emitting device of various colors (for example, a white light emitting device) can be manufactured.
The wavelength conversion member 50 may contain various fillers for the purpose of adjusting viscosity.

  Note that the surface of the light emitting element may be covered with a translucent material containing no phosphor, instead of the wavelength conversion member 50. Further, the light-transmissive material may also contain various fillers for the purpose of adjusting viscosity.

(Light reflection film 70 (first reflection film 71, second reflection film 72, third reflection film 73, fourth reflection film 74))
Each of the reflective films (the first reflective film 71, the second reflective film 72, the third reflective film 73, the fourth reflective film 74) forming the light reflective film 70 is preferably formed of an inorganic material.
Each reflective film can be formed of a metal material, an insulating material, or the like having a high light reflectance. The insulating material includes not only a material having a high reflectance but also a dielectric multilayer film. Each material will be described in detail below.

Metallic material Suitable metallic materials for each reflective film include silver, silver alloy, aluminum, gold, platinum and the like. In particular, a silver alloy having excellent sulfidation resistance is preferable, and any silver alloy known in the art may be used. The thickness of the reflective film is not particularly limited, and the thickness capable of effectively reflecting the light emitted from the light emitting element (for example, about 20 nm to about 1 μm), particularly 50 nm or more. Preferably.

・ Dielectric multilayer film (DBR)
The dielectric multilayer film (DBR) is a reflective film capable of selectively reflecting light of a predetermined wavelength, and has a structure in which two types of dielectric films having different refractive indexes are alternately laminated with a predetermined thickness. .. Specifically, a low-refractive index layer and a high-refractive index layer are alternately laminated at a thickness of ¼ wavelength of light to be reflected on an underlying layer made of an oxide film or the like that is arbitrarily formed. As a result, the light having the predetermined wavelength can be reflected with high efficiency.
For the dielectric film, for example, at least one oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al can be used, and can be formed by sputtering or CVD. .. For example, the low refractive index layer may be SiO ₂ , and the high refractive index layer may be Nb ₂ O ₅ , TiO ₂ , ZrO ₂ or Ta ₂ O ₅ . Specifically, (Nb ₂ O ₅ / SiO ₂ ) _n (n = 2 to 5) may be mentioned in order from the underlayer side.
The total film thickness of DBR can be set to about 0.2 to 1 μm.

The light reflecting film may be formed by layering fine particles having a particle size of about 10 to 500 nm.
As the material of the fine particles, titanium oxide, zirconium oxide or the like having high light reflectance can be preferably used. As a method of forming the fine particles in a layered form, a method of mixing the fine particles in a volatile solvent to cover the outer surface 33 of the translucent member 30 and then volatilizing the solvent can be mentioned.
By using fine particles of an insulating material as the light reflecting film, it is advantageous in that a short circuit does not occur even when formed directly on the surfaces of the electrodes 251, 252 and the semiconductor laminated body 28, as in the case of using the dielectric multilayer film. .. Further, by using a material having a wide wavelength range that can be reflected, such as titanium oxide, the light emitted from the light emitting element 20 and the light wavelength-converted by the wavelength conversion member 50 are used as in the case of using the metal film. The mixed light including the light can be efficiently reflected.

  All or part of the first to fourth reflective films 71 to 74 may be made of the same material, or all of them may be made of different materials. Further, different materials may be used in the first to fourth reflection films 71 to 74. For example, the first reflective film 71 is formed of a dielectric multilayer film or insulating fine particles that can reduce the risk of short circuit or the like in the portion close to the third reflective film 73, and in the portion close to the second reflective film 72. It may be formed of a metal film.

Although some embodiments according to the present invention have been exemplified above, it is needless to say that the present invention is not limited to the above-mentioned embodiments and may be any one without departing from the gist of the present invention. ..
The disclosure of the present specification may include the following aspects.
(Aspect 1)
A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting element having
A translucent member formed of a material containing a resin, covering at least a part of the side surface of the light emitting element, and having a first surface located on the light emitting surface side;
A covering member that covers an outer surface of the translucent member and has a first surface located on the light emitting surface side;
A wavelength conversion member that covers the first surface of the light emitting element, the first surface of the translucent member, and the first surface of the covering member;
Provided between the outer surface of the translucent member and the covering member, and provided between the first reflecting film made of an inorganic material and the first surface of the covering member and the wavelength conversion member, A light emitting device, comprising: a second reflective film made of an inorganic material; and a light reflective film containing the second reflective film.
(Aspect 2)
The light emitting device according to aspect 1, wherein the first reflective film and the second reflective film are made of the same inorganic material.
(Aspect 3)
The light emitting element has an electrode on the second surface side thereof,
The covering member covers a side surface of the electrode and an exposed region of the second surface of the light emitting element where the electrode is not provided,
The light reflection film,
A third reflective film made of an inorganic material, provided between the side surface of the electrode and the covering member;
3. The light emitting device according to aspect 1 or 2, further comprising a fourth reflective film made of an inorganic material, the fourth reflective film being provided between the exposed region of the light emitting element and the covering member.
(Aspect 4)
The light emitting device according to aspect 3, wherein two or more of the first reflective film, the second reflective film, the third reflective film, and the fourth reflective film are made of the same inorganic material.
(Aspect 5)
5. The light emitting device according to any one of aspects 1 to 4, wherein at least a part of the light reflection film is a dielectric multilayer film.
(Aspect 6)
The light emitting device according to any one of aspects 1 to 5, wherein at least a part of the light reflection film is a metal film.
(Aspect 7)
7. The light emitting device according to any one of aspects 1 to 6, wherein the covering member includes a resin material containing one or more reinforcing materials selected from the group consisting of carbon black, carbon nanotubes, and glass fibers.
(Aspect 8)
8. The light emitting device according to any one of aspects 1 to 7, wherein the outer surface of the translucent member is inclined outward from the second surface side of the light emitting element toward the first surface side. ..
(Aspect 9)
A step of disposing a light emitting element on the wavelength conversion member,
Covering the side surface of the light emitting element with a transparent member,
Covering the outer surface of the translucent member with a first reflective film that is an inorganic material;
Covering the wavelength conversion member exposed from the translucent member with a second reflective film that is an inorganic material;
And a step of covering the first reflective film and the second reflective film with a covering member.
(Aspect 10)
10. The manufacturing method according to aspect 9, wherein the outer surface of the translucent member is inclined outward from the second surface side of the light emitting element toward the first surface side.
(Aspect 11)
11. The manufacturing method according to aspect 9 or 10, wherein the step of covering with the first reflective film and the step of covering with the second reflective film are performed simultaneously.
(Aspect 12)
The light emitting element has an electrode on the second surface side,
Before the step of covering with the covering member,
Covering the side surface of the electrode with a third reflective film,
A step of covering a region of the second surface of the light emitting element which is not covered with the electrode with a fourth reflective film,
12. The manufacturing method according to any one of aspects 9 to 11, wherein in the step of covering with the covering member, the covering member further covers the third reflective film and the fourth reflective film.
(Aspect 13)
Two or more reflective films selected from the group consisting of the first reflective film, the second reflective film, the third reflective film and the fourth reflective film are made of the same material,
13. The manufacturing method according to aspect 12, wherein the reflective films made of the same material are simultaneously formed.

10, 15 Light emitting device 11 First surface (top surface) of light emitting device
20 Light-Emitting Element 21 First Surface (Upper Surface) of Light-Emitting Element
22 Second surface (lower surface) of light emitting element
23 side surface of light emitting element 28 semiconductor laminated body 251, 252 electrode 30 translucent member 33 outer surface of translucent member 40 coating member 50 wavelength conversion member 70 light reflection film

Claims (15)

A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting element having
A translucent member formed of a material containing a resin and covering at least a part of the side surface of the light emitting element;
A wavelength conversion member that covers the first surface of the light emitting element,
A first covering member that covers a side surface of the wavelength conversion member;
A second covering member that covers the outer side surface of the translucent member and is separated from the wavelength conversion member;
A light reflecting film in contact with the inner surface of the second covering member,
A light-emitting device in which an upper surface of the second covering member is located lower than a first surface of the light-emitting element .   A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting element having
  A translucent member formed of a material containing a resin and covering at least a part of the side surface of the light emitting element;
  A wavelength conversion member that covers the first surface of the light emitting element,
  A first covering member that covers a side surface of the wavelength conversion member;
  A second covering member that covers the outer side surface of the translucent member and is separated from the wavelength conversion member;
  A light reflecting film in contact with the inner surface of the second covering member,
  The light emitting device in which the outer surface of the first covering member and the outer surface of the second covering member are the same surface.   A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting element having
  A translucent member formed of a material containing a resin and covering at least a part of the side surface of the light emitting element;
  A wavelength conversion member that covers the first surface of the light emitting element,
  A first covering member that covers a side surface of the wavelength conversion member;
  A second covering member that covers the outer side surface of the translucent member and is separated from the wavelength conversion member;
  A light reflecting film in contact with the inner surface of the second covering member,
  The light emitting device in which the thickness of the first covering member is the same as that of the wavelength converting member. The light emitting device according to claim 1, wherein the outer surface of the first covering member and the outer surface of the second covering member are the same surface. The thickness of the first covering member, the thickness is the same as the wavelength conversion member, the light emitting device according to any one of claims 1 or 2 or 4,. Wherein on the upper surface of the second cover member, a portion of the wavelength conversion member through the light reflective film is disposed, the light emitting device according to any one of claims 1-5. The light reflecting layer, the contact with the wavelength conversion member, the light emitting device according to any one of claims 1-6. The light reflective layer is further disposed below the light emitting element, a light-emitting device according to any one of claims 1-7. And the first surface of the light emitting element, between the wavelength converting member, wherein the translucent member is arranged, the light emitting device according to any one of claims 1-8. The light emitting element has an electrode on the second surface, the light reflecting layer is in contact with the electrode, the light emitting device according to any one of claims 1-9. A first surface located on the light emitting surface side of the light emitting device, a second surface facing the first surface, and a side surface located between the first surface and the second surface. A light emitting element having
A translucent member formed of a material containing a resin and covering at least a part of the side surface of the light emitting element;
A wavelength conversion member that covers the first surface of the light emitting element,
A first covering member that covers a side surface of the wavelength conversion member;
A second covering member that covers the outer side surface of the translucent member and is separated from the wavelength conversion member;
A light reflecting film in contact with the inner surface of the second covering member, wherein the light emitting element has an electrode on the second surface, and the light reflecting film is in contact with the electrode. The light reflecting film is made of an inorganic material, the light-emitting device according to any one of claims 1 to 11. The light reflecting film is made of an insulating material, the light-emitting device according to any one of claims 1 to 12. The light reflecting film is made of a metal material, the light-emitting device according to any one of claims 1-9. The light reflecting film, the light-emitting device according to any one of claims 1 to 13 containing titanium oxide.

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