JP2018054623A - 導光機能を有する光学センサー及びその製造方法 - Google Patents
導光機能を有する光学センサー及びその製造方法 Download PDFInfo
- Publication number
- JP2018054623A JP2018054623A JP2017222488A JP2017222488A JP2018054623A JP 2018054623 A JP2018054623 A JP 2018054623A JP 2017222488 A JP2017222488 A JP 2017222488A JP 2017222488 A JP2017222488 A JP 2017222488A JP 2018054623 A JP2018054623 A JP 2018054623A
- Authority
- JP
- Japan
- Prior art keywords
- light guide
- optical sensor
- sensing region
- guide structure
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 180
- 238000004519 manufacturing process Methods 0.000 title abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 171
- 238000000034 method Methods 0.000 description 35
- 238000007740 vapor deposition Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 14
- 238000005253 cladding Methods 0.000 description 13
- 238000013461 design Methods 0.000 description 11
- 239000012792 core layer Substances 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000005019 vapor deposition process Methods 0.000 description 6
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
- G01N21/0303—Optical path conditioning in cuvettes, e.g. windows; adapted optical elements or systems; path modifying or adjustment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N2021/7753—Reagent layer on photoelectrical transducer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N2021/7769—Measurement method of reaction-produced change in sensor
- G01N2021/7786—Fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
- G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/064—Stray light conditioning
- G01N2201/0642—Light traps; baffles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】 本発明の光学センサー100は、電気回路領域111A及び光学感知領域111Bを有する半導電層111、光学感知領域111Bの上方の試料保持部23、試料保持部23と光学感知領域111Bとの間の導光構造130、並びに電気回路領域111Aの上方の電気相互接続構造140を備えている。電気相互接続構造140が導光構造130と一体的に形成され、導光構造130が試料保持部23からの発光を光学感知領域111Bに誘導するように構成されている。
【選択図】 図1A
Description
一部の実施の形態において、導光構造がリング状に配列された複数の第2の導光部を備えている。
一部の実施の形態において、少なくとも1つの第2の導光部がリング状部である。
一部の実施の形態において、導光構造が半導電層の水平上面から延びている。
一部の実施の形態において、導光構造が半導電層の上方の第1の層内に内側導光棒を有し、該半導電層の上方の第2の層内に外側導光棒を有している。
101〜105 誘電体層
106、304 誘電体層
111 半導電層
111A 電気回路領域
111B 光学感知領域
119 フィルター層
120 導波構造
130、330 導光構造
131 第1の導光部
132 第2の導光部
133 第3の導光部
140 電気相互接続構造
141 電気接触子
142 電気ビア
143 電気金属層
147 金属層
147A 開口部
23 試料保持部
55 光感知領域
331 導光スペーサ
Claims (20)
- 電気回路領域及び光学感知領域を有する半導電層、
前記光学感知領域の上方の試料保持部、
前記試料保持部と前記光学感知領域との間の導光構造、
前記試料保持部と前記導光構造との間に配された金属層、及び
前記電気回路領域の上方の電気相互接続構造、
を備えた光学センサーであって、
前記電気相互接続構造と前記導光構造とが、同じ材料で形成されており、前記金属層が、前記導光構造及び前記光学感知領域の上方に配された開口部を有しており、前記導光構造が、前記試料保持部からの発光であって前記開口部を通過した発光を、前記光学感知領域に誘導するように構成されて成ることを特徴とする光学センサー。 - 前記電気相互接続構造が、前記電気回路領域の上方に少なくとも1つの電気接触子を備え、前記導光構造が、前記光学感知領域の上方に少なくとも1つの第1の導光部を備えたことを特徴とする請求項1記載の光学センサー。
- 前記半導電層が水平上面を有し、前記少なくとも1つの電気接触子及び前記少なくとも1つの第1の導光部が、前記水平上面と平行かつ該水平上面の上方の実質的に同じ水平面に延びていることを特徴とする請求項2記載の光学センサー。
- 前記導光構造がリング状に配列された複数の第1の導光部を備えたことを特徴とする請求項2記載の光学センサー。
- 前記少なくとも1つの第1の導光部がリング状部であることを特徴とする請求項2記載の光学センサー。
- 前記電気相互接続構造が前記少なくとも1つの電気接触子の上方に少なくとも1つの電気ビアを備え、前記導光構造が前記少なくとも1つの第1の導光部の上方に少なくとも1つの第2の導光部を備えたことを特徴とする請求項2記載の光学センサー。
- 前記半導電層が水平上面を有し、前記少なくとも1つの電気ビア及び前記少なくとも1つの第2の導光部が前記水平上面と平行かつ該水平上面の上方の実質的に同じ水平面に延びていることを特徴とする請求項6記載の光学センサー。
- 前記導光構造がリング状に配列された複数の第2の導光部を備えたことを特徴とする請求項6記載の光学センサー。
- 前記少なくとも1つの第2の導光部がリング状部であることを特徴とする請求項6記載の光学センサー。
- 前記導光構造が前記半導電層の水平上面から延びていることを特徴とする請求項1記載の光学センサー。
- 前記導光構造が、前記半導電層の上方の第1の層内に内側導光棒を備え、該半導電層の上方の第2の層内に外側導光棒を備えたことを特徴とする請求項1記載の光学センサー。
- 前記導光構造の幅が、前記試料保持部に近い上部領域の方が前記光感知領域に近い底部領域より広いことを特徴とする請求項1記載の光学センサー。
- 前記導光構造の幅が、前記光感知領域に近い底部領域の方が前記試料保持部に近い上部領域より広いことを特徴とする請求項1記載の光学センサー。
- 電気回路領域及び光学感知領域を有する半導電層、
前記光学感知領域の上方の試料保持部、
前記電気回路領域の上方の少なくとも1つの電気接触子、
前記試料保持部からの発光を前記光学感知領域に誘導するように構成された少なくとも1つの第1の導光部、及び
前記試料保持部と前記少なくとも1つの第1の導光部との間に配された金属層、
を備えた光学センサーであって、
前記金属層が、前記少なくとも1つの第1の導光部及び前記光学感知領域の上方に配された開口部を有しており、前記半導電層が水平上面を有し、前記少なくとも1つの第1の導光部が、前記試料保持部と前記光学感知領域との間にあり、前記少なくとも1つの電気接触子及び前記少なくとも1つの第1の導光部が、前記水平上面と平行かつ該水平上面の上方の実質的に同じ水平面に延びていることを特徴とする光学センサー。 - 前記少なくとも1つの電気接触子と前記少なくとも1つの第1の導光部とが、同じ材料で形成されて成ることを特徴とする請求項14記載の光学センサー。
- 光学感知領域を有する半導電層、
前記光学感知領域の上方の試料保持部、
前記試料保持部からの発光を前記光学感知領域に誘導するように構成された導光構造、及び
前記試料保持部と前記導光構造との間に配された金属層、
を備えた光学センサーであって、
前記金属層が、前記導光構造及び前記光学感知領域の上方に配された開口部を有しており、前記導光構造が、前記半導電層の水平上面から延びる少なくとも1つの導光スペーサを有し、前記導光構造が、前記試料保持部の近傍に先細りの上端部を有して成ることを特徴とする光学センサー。 - 前記導光構造がリング状に配列された複数の導光スペーサを備えたことを特徴とする請求項16記載の光学センサー。
- 前記導光構造がリング状の誘導部を備えたことを特徴とする請求項16記載の光学センサー。
- 前記光学感知領域の上方に複数の誘電体層を備え、前記少なくとも1つの導光スペーサが前記複数の誘電体層にわたって延びていることを特徴とする請求項16記載の光学センサー。
- 前記導光構造が前記半導電層に対し傾斜した側壁を有し、前記半導電層の前記水平上面と前記側壁との間の挟角が約60度〜89.5度であることを特徴とする請求項16記載の光学センサー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562104340P | 2015-01-16 | 2015-01-16 | |
US62/104,340 | 2015-01-16 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016005091A Division JP2016133510A (ja) | 2015-01-16 | 2016-01-14 | 導光機能を有する光学センサー及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018054623A true JP2018054623A (ja) | 2018-04-05 |
JP6546639B2 JP6546639B2 (ja) | 2019-07-17 |
Family
ID=55177751
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016005091A Pending JP2016133510A (ja) | 2015-01-16 | 2016-01-14 | 導光機能を有する光学センサー及びその製造方法 |
JP2017222488A Active JP6546639B2 (ja) | 2015-01-16 | 2017-11-20 | 導光機能を有する光学センサー及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016005091A Pending JP2016133510A (ja) | 2015-01-16 | 2016-01-14 | 導光機能を有する光学センサー及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20160211390A1 (ja) |
EP (1) | EP3045896B1 (ja) |
JP (2) | JP2016133510A (ja) |
KR (2) | KR20160088821A (ja) |
CN (1) | CN105810701B (ja) |
AU (1) | AU2016200223B2 (ja) |
TW (1) | TWI591324B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11226290B2 (en) | 2016-06-01 | 2022-01-18 | Quantum-Si Incorporated | Photonic structures and integrated device for detecting and analyzing molecules |
TWI669811B (zh) * | 2018-02-01 | 2019-08-21 | Powerchip Semiconductor Manufacturing Corporation | 具有類光導管結構之影像感測器 |
TWI739119B (zh) * | 2018-06-21 | 2021-09-11 | 昇佳電子股份有限公司 | 光學感測模組 |
EP3644365A1 (en) * | 2018-10-25 | 2020-04-29 | ams International AG | Optical sensor device and method for manufacturing an optical sensor device |
AU2020326781A1 (en) | 2019-08-08 | 2022-03-17 | Quantum-Si Incorporated | Increased emission collection efficiency in integrated optical devices |
WO2021067500A1 (en) * | 2019-09-30 | 2021-04-08 | California Institute Of Technology | Integrated electronic-photonic devices, systems and methods of making thereof |
KR102228480B1 (ko) | 2020-05-14 | 2021-03-16 | 주식회사 케이티 서비스 북부 | 안전사다리 |
GB2595671B (en) * | 2020-06-02 | 2022-10-19 | X Fab Global Services Gmbh | Optical sensor comprising a photodiode array |
KR20220013738A (ko) | 2020-07-27 | 2022-02-04 | 삼성전자주식회사 | 이미지 센서 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008513974A (ja) * | 2004-07-26 | 2008-05-01 | セーエスウーエム、サントル、スイス、デレクトロニック、エ、ド、ミクロテクニック、ソシエテ、アノニム | 固体光検出器ピクセルおよび光検出方法 |
JP2011151126A (ja) * | 2010-01-20 | 2011-08-04 | Toshiba Corp | 固体撮像装置 |
JP2012194055A (ja) * | 2011-03-16 | 2012-10-11 | Seiko Epson Corp | 光学センサー及び電子機器 |
WO2014031157A1 (en) * | 2012-08-20 | 2014-02-27 | Illumina, Inc. | Method and system for fluorescence lifetime based sequencing |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6197503B1 (en) * | 1997-11-26 | 2001-03-06 | Ut-Battelle, Llc | Integrated circuit biochip microsystem containing lens |
TW494574B (en) | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
JP3827909B2 (ja) * | 2000-03-21 | 2006-09-27 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
DE10145701A1 (de) * | 2001-09-17 | 2003-04-10 | Infineon Technologies Ag | Fluoreszenz-Biosensorchip und Fluoreszenz-Biosensorchip-Anordnung |
US7140058B2 (en) * | 2002-09-27 | 2006-11-28 | Colgate-Palmolive Company | Toothbrush with kinetic plate |
KR20050085579A (ko) * | 2002-12-13 | 2005-08-29 | 소니 가부시끼 가이샤 | 고체 촬상 소자 및 그 제조방법 |
US6861686B2 (en) * | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
KR100745985B1 (ko) * | 2004-06-28 | 2007-08-06 | 삼성전자주식회사 | 이미지 센서 |
US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
JP5005179B2 (ja) * | 2005-03-23 | 2012-08-22 | ソニー株式会社 | 固体撮像装置 |
US7683407B2 (en) * | 2005-08-01 | 2010-03-23 | Aptina Imaging Corporation | Structure and method for building a light tunnel for use with imaging devices |
EP2012114B1 (en) * | 2006-04-26 | 2014-05-07 | National University Corporation Nara Institute of Science and Technology | Optical and electrical image sensor for biomedical measurements |
US8637436B2 (en) * | 2006-08-24 | 2014-01-28 | California Institute Of Technology | Integrated semiconductor bioarray |
KR100781545B1 (ko) * | 2006-08-11 | 2007-12-03 | 삼성전자주식회사 | 감도가 향상된 이미지 센서 및 그의 제조방법 |
US7537951B2 (en) * | 2006-11-15 | 2009-05-26 | International Business Machines Corporation | Image sensor including spatially different active and dark pixel interconnect patterns |
JP2008235689A (ja) * | 2007-03-22 | 2008-10-02 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
EP2218113B1 (en) * | 2007-11-01 | 2016-04-27 | Insiava (Pty) Limited | Optoelectronic device with light directing arrangement and method of forming the arrangement |
JP5357441B2 (ja) | 2008-04-04 | 2013-12-04 | キヤノン株式会社 | 固体撮像装置の製造方法 |
US8921280B2 (en) * | 2009-02-11 | 2014-12-30 | Samsung Electronics Co., Ltd. | Integrated bio-chip and method of fabricating the integrated bio-chip |
AU2011217862B9 (en) * | 2010-02-19 | 2014-07-10 | Pacific Biosciences Of California, Inc. | Integrated analytical system and method |
US9482615B2 (en) * | 2010-03-15 | 2016-11-01 | Industrial Technology Research Institute | Single-molecule detection system and methods |
US20120156100A1 (en) * | 2010-12-20 | 2012-06-21 | Industrial Technology Research Institute | Apparatus for single molecule detection and method thereof |
JP5274678B2 (ja) * | 2011-02-09 | 2013-08-28 | キヤノン株式会社 | 光電変換素子、およびこれを用いた光電変換装置、撮像システム |
US8969781B2 (en) * | 2012-06-28 | 2015-03-03 | Board Of Regents, The University Of Texas System | Integrated optical biosensor array including charge injection circuit and quantizer circuit |
EP2959283B1 (en) * | 2013-02-22 | 2022-08-17 | Pacific Biosciences of California, Inc. | Integrated illumination of optical analytical devices |
-
2016
- 2016-01-14 EP EP16151201.7A patent/EP3045896B1/en active Active
- 2016-01-14 KR KR1020160004945A patent/KR20160088821A/ko active Search and Examination
- 2016-01-14 US US14/996,037 patent/US20160211390A1/en not_active Abandoned
- 2016-01-14 AU AU2016200223A patent/AU2016200223B2/en active Active
- 2016-01-14 JP JP2016005091A patent/JP2016133510A/ja active Pending
- 2016-01-15 CN CN201610028259.6A patent/CN105810701B/zh active Active
- 2016-01-15 TW TW105101180A patent/TWI591324B/zh active
-
2017
- 2017-11-20 JP JP2017222488A patent/JP6546639B2/ja active Active
-
2018
- 2018-06-21 KR KR1020180071315A patent/KR101994331B1/ko active IP Right Grant
-
2019
- 2019-10-28 US US16/665,352 patent/US11362223B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008513974A (ja) * | 2004-07-26 | 2008-05-01 | セーエスウーエム、サントル、スイス、デレクトロニック、エ、ド、ミクロテクニック、ソシエテ、アノニム | 固体光検出器ピクセルおよび光検出方法 |
JP2011151126A (ja) * | 2010-01-20 | 2011-08-04 | Toshiba Corp | 固体撮像装置 |
JP2012194055A (ja) * | 2011-03-16 | 2012-10-11 | Seiko Epson Corp | 光学センサー及び電子機器 |
WO2014031157A1 (en) * | 2012-08-20 | 2014-02-27 | Illumina, Inc. | Method and system for fluorescence lifetime based sequencing |
Also Published As
Publication number | Publication date |
---|---|
KR101994331B1 (ko) | 2019-09-30 |
AU2016200223B2 (en) | 2017-02-09 |
EP3045896A1 (en) | 2016-07-20 |
US20200066926A1 (en) | 2020-02-27 |
CN105810701A (zh) | 2016-07-27 |
EP3045896C0 (en) | 2023-06-07 |
KR20180075454A (ko) | 2018-07-04 |
AU2016200223A1 (en) | 2016-08-04 |
KR20160088821A (ko) | 2016-07-26 |
TW201627651A (zh) | 2016-08-01 |
TWI591324B (zh) | 2017-07-11 |
CN105810701B (zh) | 2019-10-18 |
EP3045896B1 (en) | 2023-06-07 |
JP6546639B2 (ja) | 2019-07-17 |
JP2016133510A (ja) | 2016-07-25 |
US11362223B2 (en) | 2022-06-14 |
US20160211390A1 (en) | 2016-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6546639B2 (ja) | 導光機能を有する光学センサー及びその製造方法 | |
JP6815448B2 (ja) | 固体撮像装置 | |
US8692344B2 (en) | Back side illuminated image sensor architecture, and method of making same | |
JP2013242179A (ja) | 分光センサ | |
KR20150053707A (ko) | 반도체 장치 및 그 제조 방법 | |
CN103681715A (zh) | 低轮廓图像传感器封装和方法 | |
US9273999B2 (en) | Spectroscopic sensor | |
US20090160002A1 (en) | Image sensor and method for fabricating the same | |
JP5875936B2 (ja) | 分光センサ | |
JP2015122374A (ja) | 固体撮像装置及びその製造方法 | |
JP2007305690A (ja) | 固体撮像装置用素子及びその製造方法 | |
US11698296B2 (en) | Light sensor using pixel optical diffraction gratings having different pitches | |
JP2017011037A (ja) | 固体撮像装置及びその製造方法ならびにカメラ | |
CN102891159B (zh) | Cmos影像传感器的像元结构及其制造方法 | |
JP2015008535A (ja) | 固体撮像素子及びカメラ | |
KR100971213B1 (ko) | 이미지 센서의 제조 방법 | |
WO2013035258A1 (ja) | 固体撮像装置、及びその製造方法 | |
KR100695995B1 (ko) | 반도체 소자 및 그 제조방법 | |
CN117678073A (zh) | 光学检测装置、光学检测装置的制造方法和电子设备 | |
JP2014027091A (ja) | 固体撮像素子及び固体撮像素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181017 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181019 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190115 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190318 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190417 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190529 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190621 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6546639 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |