JP2018046064A - 発光ダイオードチップの製造方法及び発光ダイオードチップ - Google Patents

発光ダイオードチップの製造方法及び発光ダイオードチップ Download PDF

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Publication number
JP2018046064A
JP2018046064A JP2016177895A JP2016177895A JP2018046064A JP 2018046064 A JP2018046064 A JP 2018046064A JP 2016177895 A JP2016177895 A JP 2016177895A JP 2016177895 A JP2016177895 A JP 2016177895A JP 2018046064 A JP2018046064 A JP 2018046064A
Authority
JP
Japan
Prior art keywords
wafer
emitting diode
transparent substrate
back surface
diode chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016177895A
Other languages
English (en)
Japanese (ja)
Inventor
卓 岡村
Taku Okamura
卓 岡村
宏 北村
Hiroshi Kitamura
宏 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2016177895A priority Critical patent/JP2018046064A/ja
Priority to TW106126223A priority patent/TWI730151B/zh
Priority to KR1020170108608A priority patent/KR102212255B1/ko
Priority to CN201710785071.0A priority patent/CN107819056A/zh
Publication of JP2018046064A publication Critical patent/JP2018046064A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)
JP2016177895A 2016-09-12 2016-09-12 発光ダイオードチップの製造方法及び発光ダイオードチップ Pending JP2018046064A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016177895A JP2018046064A (ja) 2016-09-12 2016-09-12 発光ダイオードチップの製造方法及び発光ダイオードチップ
TW106126223A TWI730151B (zh) 2016-09-12 2017-08-03 發光二極體晶片的製造方法
KR1020170108608A KR102212255B1 (ko) 2016-09-12 2017-08-28 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
CN201710785071.0A CN107819056A (zh) 2016-09-12 2017-09-04 发光二极管芯片的制造方法和发光二极管芯片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016177895A JP2018046064A (ja) 2016-09-12 2016-09-12 発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (1)

Publication Number Publication Date
JP2018046064A true JP2018046064A (ja) 2018-03-22

Family

ID=61600876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016177895A Pending JP2018046064A (ja) 2016-09-12 2016-09-12 発光ダイオードチップの製造方法及び発光ダイオードチップ

Country Status (4)

Country Link
JP (1) JP2018046064A (ko)
KR (1) KR102212255B1 (ko)
CN (1) CN107819056A (ko)
TW (1) TWI730151B (ko)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150261A (ja) * 2003-11-12 2005-06-09 Matsushita Electric Works Ltd 多重反射防止構造を備えた発光素子とその製造方法
JP2007073734A (ja) * 2005-09-07 2007-03-22 Kyocera Corp 発光素子
JP2011176093A (ja) * 2010-02-24 2011-09-08 Sumitomo Electric Ind Ltd 発光素子用基板および発光素子
JP2012195404A (ja) * 2011-03-16 2012-10-11 Toshiba Lighting & Technology Corp 発光装置および照明装置
JP2013197279A (ja) * 2012-03-19 2013-09-30 Stanley Electric Co Ltd 発光装置およびその製造方法
US20140117395A1 (en) * 2012-10-30 2014-05-01 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
US20140225149A1 (en) * 2011-09-30 2014-08-14 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Component and Method for Fabricating an Optoelectronic Semiconductor Component
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
WO2015030237A1 (ja) * 2013-08-30 2015-03-05 旭化成イーマテリアルズ株式会社 半導体発光素子及び光学フィルム
US20150091043A1 (en) * 2013-10-02 2015-04-02 Sensor Electronic Technology, Inc. Heterostructure Including Anodic Aluminum Oxide Layer
JP2015119123A (ja) * 2013-12-20 2015-06-25 株式会社ディスコ 発光チップ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070000952A (ko) * 2005-06-27 2007-01-03 주식회사 엘지화학 열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법
CN104160520A (zh) * 2012-02-01 2014-11-19 松下电器产业株式会社 半导体发光元件、其制造方法和光源装置
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
JP6255255B2 (ja) * 2014-01-27 2017-12-27 株式会社ディスコ 光デバイスの加工方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150261A (ja) * 2003-11-12 2005-06-09 Matsushita Electric Works Ltd 多重反射防止構造を備えた発光素子とその製造方法
JP2007073734A (ja) * 2005-09-07 2007-03-22 Kyocera Corp 発光素子
JP2011176093A (ja) * 2010-02-24 2011-09-08 Sumitomo Electric Ind Ltd 発光素子用基板および発光素子
JP2012195404A (ja) * 2011-03-16 2012-10-11 Toshiba Lighting & Technology Corp 発光装置および照明装置
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
US20140225149A1 (en) * 2011-09-30 2014-08-14 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Component and Method for Fabricating an Optoelectronic Semiconductor Component
JP2013197279A (ja) * 2012-03-19 2013-09-30 Stanley Electric Co Ltd 発光装置およびその製造方法
US20140117395A1 (en) * 2012-10-30 2014-05-01 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
WO2015030237A1 (ja) * 2013-08-30 2015-03-05 旭化成イーマテリアルズ株式会社 半導体発光素子及び光学フィルム
US20150091043A1 (en) * 2013-10-02 2015-04-02 Sensor Electronic Technology, Inc. Heterostructure Including Anodic Aluminum Oxide Layer
JP2015119123A (ja) * 2013-12-20 2015-06-25 株式会社ディスコ 発光チップ

Also Published As

Publication number Publication date
CN107819056A (zh) 2018-03-20
TW201813149A (zh) 2018-04-01
TWI730151B (zh) 2021-06-11
KR20180029858A (ko) 2018-03-21
KR102212255B1 (ko) 2021-02-03

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