JP2018029052A - プラズマクリーナで使用される磁石 - Google Patents
プラズマクリーナで使用される磁石 Download PDFInfo
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- JP2018029052A JP2018029052A JP2017136869A JP2017136869A JP2018029052A JP 2018029052 A JP2018029052 A JP 2018029052A JP 2017136869 A JP2017136869 A JP 2017136869A JP 2017136869 A JP2017136869 A JP 2017136869A JP 2018029052 A JP2018029052 A JP 2018029052A
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- vacuum chamber
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- magnet
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
- H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
- H01F1/047—Alloys characterised by their composition
- H01F1/053—Alloys characterised by their composition containing rare earth metals
- H01F1/055—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
- H01F1/057—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/4697—Generating plasma using glow discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/028—Particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Abstract
Description
を備える装置を示す。
Claims (15)
- 真空チャンバから汚染物質をクリーニングするためのクリーニングシステムであって、
プラズマを生成するためのプラズマ発生器を備え、該プラズマ発生器は、荷電粒子及び反応性中性粒子が前記プラズマ発生器を離れる出口を有する、
クリーニングシステムにおいて、
前記真空チャンバに入る荷電粒子の数を低減するために、前記プラズマ発生器の外側に磁石が配置されている、ことを特徴とするクリーニングシステム。 - 前記出口から前記真空チャンバまで反応性中性粒子を導くための通路をさらに有する、請求項1に記載のクリーニングシステム。
- ワークピースを処理するための真空チャンバと、該真空チャンバ及び/又は前記ワークピースをクリーニングするためのプラズマクリーニングシステムとを備える装置であって、
請求項1に記載のクリーニングシステムと、
処理されるべき試料を含む真空チャンバと、
前記真空チャンバ及び前記プラズマ発生器を連結する通路と、
を備える装置。 - 前記磁石が永久磁石である、請求項1乃至3いずれか一項記載の物。
- 前記磁石がNdFeB又はSmCo磁石を含む、請求項4記載の物。
- 前記磁石がコイルである、請求項1乃至3のいずれか一項記載の物。
- 前記プラズマ発生器からの荷電粒子が前記真空チャンバ内において、二次プラズマ源を生成することを防ぐために、磁気が十分に強い、請求項1乃至6のいずれか一項記載の物。
- 真空チャンバ内のワークピースに作用するための荷電粒子ビームを提供するように構成された荷電粒子ビームカラムをさらに有し、前記磁石は、前記荷電粒子の動作を妨げないために十分に弱い磁場を生成する、請求項1乃至7のいずれか一項記載の物。
- 前記磁石が前記プラズマ発生器の前記出口に隣接して配置されている、請求項1乃至8のいずれか一項記載の装置。
- 前記磁石が前記通路に隣接して配置されており、前記通路内まで延在する磁場を生じる、請求項2乃至9のいずれか一項記載の物。
- 前記プラズマ発生器が、ACグロー放電プラズマ発生器、RF誘導結合もしくは容量結合プラズマ発生器、又は、DCプラズマ発生器を含む、請求項1乃至10のいずれか一項記載の物。
- 真空チャンバから汚染物質をクリーニングする方法であって、
前記真空チャンバの外側のプラズマ発生器内でプラズマを生成するステップであって、前記プラズマは反応性中性粒子及び荷電粒子を含み、前記プラズマ発生器は前記反応性中性粒子及び荷電粒子が真空チャンバを離れる出口を有する、ステップと、
前記出口を介して、反応性中性粒子及び荷電粒子が前記プラズマ発生器を離れることを可能にするステップと、
を有する方法において、
前記荷電粒子が真空チャンバに入るのを妨げるために前記プラズマ発生器の外側に配置された磁石からの磁場を用いて、前記荷電粒子が前記出口を離れた後に前記荷電粒子を偏向させるステップを、
有することを特徴とする方法。 - 磁石からの磁場を用いて、前記荷電粒子が前記出口を離れた後に前記荷電粒子を偏向させるステップは、永久磁石からの磁場によって、前記荷電粒子を偏向させるステップを含む、請求項12に記載の方法。
- 磁石からの磁場を用いて、前記荷電粒子が前記出口を離れた後に前記荷電粒子を偏向させるステップは、コイルからの磁場によって、前記荷電粒子を偏向させるステップを含む、請求項12に記載の方法。
- 前記プラズマ発生器の前記出口は、前記プラズマ発生器と前記真空チャンバとの間の通路内に開口しており、前記荷電粒子が前記出口を離れた後に前記荷電粒子を偏向させるステップは、前記通路内で前記荷電粒子を偏向させるステップを含む、請求項12に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16184239.8A EP3285278A1 (en) | 2016-08-16 | 2016-08-16 | Magnet used with a plasma cleaner |
EP16184239.8 | 2016-08-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018029052A true JP2018029052A (ja) | 2018-02-22 |
JP6983558B2 JP6983558B2 (ja) | 2021-12-17 |
Family
ID=56686716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017136869A Active JP6983558B2 (ja) | 2016-08-16 | 2017-07-13 | プラズマクリーナで使用される磁石 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20180053638A1 (ja) |
EP (1) | EP3285278A1 (ja) |
JP (1) | JP6983558B2 (ja) |
KR (1) | KR20180019475A (ja) |
CN (1) | CN107768223B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115586712B (zh) * | 2022-10-09 | 2023-09-22 | 亚新半导体科技(无锡)有限公司 | 节能型晶圆生产用去胶清洗设备 |
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JP2008177154A (ja) * | 2006-10-31 | 2008-07-31 | Fei Co | クラスタ源を使用する荷電粒子ビーム処理 |
JP2009004778A (ja) * | 2007-06-21 | 2009-01-08 | Fei Co | 高解像度プラズマ・エッチング |
JP2009516920A (ja) * | 2005-11-22 | 2009-04-23 | アプライド マテリアルズ インコーポレイテッド | 誘電体膜を洗浄するための装置及び方法 |
JP2012238623A (ja) * | 2011-05-09 | 2012-12-06 | Canon Inc | 荷電粒子線描画装置およびデバイスの製造方法 |
JP2016048665A (ja) * | 2014-08-28 | 2016-04-07 | 日新イオン機器株式会社 | イオン照射装置及びイオン照射装置のクリーニング方法 |
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2016
- 2016-08-16 EP EP16184239.8A patent/EP3285278A1/en not_active Withdrawn
-
2017
- 2017-07-07 KR KR1020170086713A patent/KR20180019475A/ko not_active Application Discontinuation
- 2017-07-10 CN CN201710556214.0A patent/CN107768223B/zh active Active
- 2017-07-13 JP JP2017136869A patent/JP6983558B2/ja active Active
- 2017-08-16 US US15/678,394 patent/US20180053638A1/en not_active Abandoned
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JP2002503031A (ja) * | 1998-02-09 | 2002-01-29 | アプライド マテリアルズ インコーポレイテッド | 種密度を個別制御するプラズマアシスト処理チャンバ |
JP2009516920A (ja) * | 2005-11-22 | 2009-04-23 | アプライド マテリアルズ インコーポレイテッド | 誘電体膜を洗浄するための装置及び方法 |
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JP2012238623A (ja) * | 2011-05-09 | 2012-12-06 | Canon Inc | 荷電粒子線描画装置およびデバイスの製造方法 |
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Also Published As
Publication number | Publication date |
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JP6983558B2 (ja) | 2021-12-17 |
US20180053638A1 (en) | 2018-02-22 |
EP3285278A1 (en) | 2018-02-21 |
CN107768223A (zh) | 2018-03-06 |
KR20180019475A (ko) | 2018-02-26 |
CN107768223B (zh) | 2021-11-09 |
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