JP2018014417A5 - - Google Patents
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- JP2018014417A5 JP2018014417A5 JP2016143298A JP2016143298A JP2018014417A5 JP 2018014417 A5 JP2018014417 A5 JP 2018014417A5 JP 2016143298 A JP2016143298 A JP 2016143298A JP 2016143298 A JP2016143298 A JP 2016143298A JP 2018014417 A5 JP2018014417 A5 JP 2018014417A5
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- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 21
- 239000002344 surface layer Substances 0.000 claims 3
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016143298A JP6531731B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
PCT/JP2017/023902 WO2018016283A1 (ja) | 2016-07-21 | 2017-06-29 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016143298A JP6531731B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018014417A JP2018014417A (ja) | 2018-01-25 |
JP2018014417A5 true JP2018014417A5 (enrdf_load_stackoverflow) | 2018-09-20 |
JP6531731B2 JP6531731B2 (ja) | 2019-06-19 |
Family
ID=60992126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016143298A Active JP6531731B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6531731B2 (enrdf_load_stackoverflow) |
WO (1) | WO2018016283A1 (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108511512A (zh) * | 2018-02-05 | 2018-09-07 | 东南大学 | 一种带有波浪型场限环结构的功率半导体器件及其制备方法 |
JP6904279B2 (ja) * | 2018-02-27 | 2021-07-14 | 三菱電機株式会社 | 半導体装置およびその製造方法並びに電力変換装置 |
JP7338242B2 (ja) * | 2019-05-30 | 2023-09-05 | 株式会社デンソー | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2689047B2 (ja) * | 1991-07-24 | 1997-12-10 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタとその製造方法 |
JP4167313B2 (ja) * | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
JP2002170963A (ja) * | 2000-12-01 | 2002-06-14 | Sanken Electric Co Ltd | 半導体素子、半導体装置、及び半導体素子の製造方法 |
JP2003303966A (ja) * | 2002-04-11 | 2003-10-24 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP5366297B2 (ja) * | 2009-02-10 | 2013-12-11 | 富士電機株式会社 | 半導体装置 |
US8709893B2 (en) * | 2011-08-23 | 2014-04-29 | Alpha & Omega Semiconductor, Inc. | Method of making a low-Rdson vertical power MOSFET device |
JP6150542B2 (ja) * | 2013-02-04 | 2017-06-21 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
JP5967065B2 (ja) * | 2013-12-17 | 2016-08-10 | トヨタ自動車株式会社 | 半導体装置 |
CN105518829B (zh) * | 2014-04-18 | 2018-01-26 | 富士电机株式会社 | 半导体装置的制造方法 |
JP6534813B2 (ja) * | 2015-01-08 | 2019-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
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2016
- 2016-07-21 JP JP2016143298A patent/JP6531731B2/ja active Active
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2017
- 2017-06-29 WO PCT/JP2017/023902 patent/WO2018016283A1/ja active Application Filing