JP2018010892A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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Abstract
Description
[先行技術文献]
[非特許文献]
[非特許文献1] Tohru Oka et al.,"Vertical GaN‐based trench metal oxide semiconductor field‐effect transistors on a free‐standing GaN substrate with blocking voltage of 1.6 kV",Applied Physics Express,published 28 January 2014,Volume 7,Number 2,021002
[特許文献]
[特許文献1] 特開2007−258578号公報
Claims (10)
- プレーナゲートを有する縦型MOSFETを有する半導体装置の製造方法であって、
窒化ガリウム単結晶基板上にn型窒化ガリウム層を形成する段階と、
マグネシウム、ベリリウム、カルシウムおよび亜鉛の少なくとも一種類以上を有する不純物を前記n型窒化ガリウム層にイオン注入することにより、前記窒化ガリウム単結晶基板の主面に平行な方向に均一な濃度の前記不純物を有する不純物注入領域を形成する段階と
を有し、
前記不純物注入領域の少なくとも一部は、前記縦型MOSFETのチャネル形成領域として機能する
半導体装置の製造方法。 - 前記不純物注入領域を形成する段階において、
前記不純物注入領域の深さに応じて10keV以上200keV以下のエネルギーにより前記不純物を加速させて、1E+12cm−2以上1E+14cm−2以下のドーズ量の前記不純物を前記n型窒化ガリウム層にイオン注入する
請求項1に記載の半導体装置の製造方法。 - 前記不純物注入領域は、1E+16cm−3以上1E+18cm−3以下の前記不純物の濃度を有する
請求項2に記載の半導体装置の製造方法。 - n型窒化ガリウム層を形成する段階の後、かつ、前記不純物注入領域を形成する段階の前に、高濃度の前記不純物を有する高濃度不純物領域を前記不純物注入領域よりも深い位置に形成する段階をさらに備える
請求項1から3のいずれか一項に記載の半導体装置の製造方法。 - 前記高濃度不純物領域を形成する段階において、
前記高濃度不純物領域の深さに応じて300keV以上800keV以下のエネルギーにより前記不純物を加速させて、1E+14cm−2以上1E+15cm−2以下のドーズ量の前記不純物を前記n型窒化ガリウム層にイオン注入する
請求項4に記載の半導体装置の製造方法。 - 前記高濃度不純物領域は、1E+19cm−3以上1E+20cm−3以下の前記不純物の濃度を有する
請求項5に記載の半導体装置の製造方法。 - 前記高濃度不純物領域を形成する段階において、
1E+18cm−3以上1E+20cm−3以下の前記不純物の濃度を有する前記高濃度不純物領域を前記n型窒化ガリウム層上にエピタキシャル形成する
請求項4に記載の半導体装置の製造方法。 - 前記不純物はマグネシウムである
請求項1から7のいずれか一項に記載の半導体装置の製造方法。 - 前記不純物注入領域を形成する段階の後に、前記不純物注入領域上に直接接するキャップ層を形成する段階と、
前記キャップ層を形成する段階の後に、1100℃以上1400℃以下の温度で前記不純物注入領域をアニールする段階をさらに備える
請求項1から8のいずれか一項に記載の半導体装置の製造方法。 - プレーナゲートを有する縦型MOSFETを有する半導体装置であって、
窒化ガリウム単結晶基板と、
前記窒化ガリウム単結晶基板上の窒化ガリウム層と、
前記窒化ガリウム層中に設けられ、マグネシウム、ベリリウム、カルシウムおよび亜鉛の少なくとも一種類以上を有する不純物を含み、前記窒化ガリウム単結晶基板の主面に平行な方向に均一な濃度の前記不純物を有する不純物注入領域と
を備え、
前記不純物注入領域の少なくとも一部は、前記縦型MOSFETのチャネル形成領域として機能する
半導体装置。
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