JP2017534070A5 - - Google Patents

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Publication number
JP2017534070A5
JP2017534070A5 JP2016534124A JP2016534124A JP2017534070A5 JP 2017534070 A5 JP2017534070 A5 JP 2017534070A5 JP 2016534124 A JP2016534124 A JP 2016534124A JP 2016534124 A JP2016534124 A JP 2016534124A JP 2017534070 A5 JP2017534070 A5 JP 2017534070A5
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JP
Japan
Prior art keywords
group
photoresist composition
compound
crosslinking system
divalent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016534124A
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English (en)
Japanese (ja)
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JP2017534070A (ja
Filing date
Publication date
Priority claimed from US14/516,472 external-priority patent/US9383646B2/en
Application filed filed Critical
Publication of JP2017534070A publication Critical patent/JP2017534070A/ja
Publication of JP2017534070A5 publication Critical patent/JP2017534070A5/ja
Pending legal-status Critical Current

Links

JP2016534124A 2014-10-16 2015-12-15 二段階フォトレジスト組成物および方法 Pending JP2017534070A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/516,472 US9383646B2 (en) 2014-02-24 2014-10-16 Two-step photoresist compositions and methods
PCT/US2015/065691 WO2016086236A2 (en) 2014-02-24 2015-12-15 Two-step photoresist compositions and methods

Publications (2)

Publication Number Publication Date
JP2017534070A JP2017534070A (ja) 2017-11-16
JP2017534070A5 true JP2017534070A5 (enExample) 2018-11-08

Family

ID=60201754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016534124A Pending JP2017534070A (ja) 2014-10-16 2015-12-15 二段階フォトレジスト組成物および方法

Country Status (5)

Country Link
US (1) US9383646B2 (enExample)
JP (1) JP2017534070A (enExample)
KR (1) KR20170118587A (enExample)
CN (1) CN107087426A (enExample)
WO (1) WO2016086236A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6967967B2 (ja) * 2014-10-08 2021-11-17 アレックス フィリップ グラハム ロビンソンAlex Philip Graham ROBINSON スピンオンハードマスク材料
US10095112B2 (en) * 2017-02-24 2018-10-09 Irresistible Materials Ltd Multiple trigger photoresist compositions and methods
KR102417180B1 (ko) * 2017-09-29 2022-07-05 삼성전자주식회사 Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법
JP7432620B2 (ja) * 2019-05-19 2024-02-16 ロビンソン,アレックス,ピー.ジー. Euv用パターン化レジストの形成方法
JP2020196771A (ja) * 2019-05-30 2020-12-10 Jsr株式会社 組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニングされた基板の製造方法
US12386266B2 (en) * 2021-12-13 2025-08-12 Changxin Memory Technologies, Inc. Method of processing photoresist layer, and photoresist layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0885405B1 (en) * 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US6114082A (en) * 1996-09-16 2000-09-05 International Business Machines Corporation Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same
US6190829B1 (en) * 1996-09-16 2001-02-20 International Business Machines Corporation Low “K” factor hybrid photoresist
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
GB0920231D0 (en) * 2009-11-18 2010-01-06 Univ Birmingham Photoresist composition
IL213195A0 (en) * 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP5621755B2 (ja) * 2011-11-17 2014-11-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US9256126B2 (en) * 2012-11-14 2016-02-09 Irresistible Materials Ltd Methanofullerenes
US9323149B2 (en) * 2013-03-05 2016-04-26 Irresistible Materials Ltd Methanofullerenes
US9046767B2 (en) * 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device

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