JP2017524918A - ソリッドステートlidar回路 - Google Patents
ソリッドステートlidar回路 Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1326—Liquid crystal optical waveguides or liquid crystal cells specially adapted for gating or modulating between optical waveguides
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- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/42—Simultaneous measurement of distance and other co-ordinates
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- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/292—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by controlled diffraction or phased-array beam steering
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- G01S17/34—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
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Abstract
Description
この特許文献の開示の一部は、著作権保護の対象となる素材を含んでいることがある。著作権所有者は、米国特許商標局のファイル又は記録に現れるままでの特許文献又は特許開示の何者かによる複製には異議はないが、それ以外は何であれ、全ての著作権を保持している。この著作権表示は、以下に記載される全てのデータ、それに付随する図面、及び以下に記載されるソフトウェアに“Copyright(C)2014, Intel Corporation, All Rights Reserved.”を適用する。
Claims (25)
- 基板内の導波路のアレイであり、ソース光を当該導波路のアレイへと分割するスプリッタに結合された導波路のアレイと、
前記基板上の絶縁層であり、前記導波路のアレイのパスの一部を露出させる開口を有する絶縁層と、
前記絶縁層の上の、及び前記絶縁層の前記開口によって露出された前記導波路のアレイの前記パスの前記一部の上の液晶層であり、当該液晶層への電圧の印加が、前記絶縁層の前記開口によって露出された前記導波路のアレイ内の全ての導波路の相対的な位相を変化させる、液晶層と、
を有する回路デバイス。 - 前記基板はシリコン基板を有し、前記絶縁層は酸化物層を有する、請求項1に記載の回路デバイス。
- 基板に集積された導波路のアレイと、
レーザからのソース光を受けて該ソース光を前記導波路のアレイへと分割する、前記基板に集積されたスプリッタと、
前記基板上の絶縁層であり、前記導波路のアレイのパスの一部を露出させる開口を有する絶縁層と、
前記絶縁層の上の、及び前記絶縁層の前記開口によって露出された前記導波路のアレイの前記パスの前記一部の上の液晶層であり、当該液晶層への電圧の印加が、前記絶縁層の前記開口によって露出された前記導波路のアレイ内の全ての導波路の相対的な位相を変化させる、液晶層と、
検出された遠視野の散乱光と比較するために、前記導波路からの光を基準信号として受け取る、前記基板に集積された光検出器と、
を有する集積フォトニクスチップ。 - 前記基板はシリコン基板を有する、請求項3に記載の集積フォトニクスチップ。
- 前記絶縁層は酸化物層を有する、請求項3又は4に記載の集積フォトニクスチップ。
- 基板の集積されたスプリッタでソース光を受光するステップと、
前記スプリッタで、前記ソース光を、前記基板に集積された導波路のアレイへと分割して、前記ソース光を、前記基板上に集積された絶縁層の開口を含んだ導波路パスに通すことであり、前記絶縁層の前記開口は、前記導波路のアレイを、前記絶縁層上に集積された液晶層に露出させている、ステップと、
前記液晶層に電圧を印加することによって、前記アレイの導波路内の光の位相を動的に調節するステップと、
前記位相を調節された光を前記導波路から標的物へ送信するステップと、
を有する方法。 - 前記位相を動的に調節することは、前記導波路間に位相ランプを生成するように前記液晶層に電圧を印加することを有する、請求項6に記載の方法。
- 前記液晶層は、液晶・オン・シリコン(LCOS)層を有する、請求項7に記載の方法。
- 前記位相を動的に調節することは、撮像場を横切って前記ソース光をビーム操舵することを有する、請求項6乃至8の何れかに記載の方法。
- 前記基板はシリコン基板を有する、請求項6乃至9の何れかに記載の方法。
- 前記絶縁層は酸化物層を有する、請求項6乃至10の何れかに記載の方法。
- 前記開口は、前記導波路のアレイを横切る三角形の形状にされた開口を有し、前記三角形の形状にされた開口は、その頂点を1つの導波路付近に有し、前記三角形の形状は、その後に隣接する導波路ごとに、より多く露出させることで、増大していく位相シフトを前記アレイの導波路間に提供する、請求項6乃至11の何れかに記載の方法。
- 光検出器を用いて、前記スプリッタの前で前記ソース光を基準信号として抜き出すステップ、を更に有する請求項6乃至12の何れかに記載の方法。
- 前記導波路のアレイから光を受け取って該光を前記液晶層中に結合するように前記基板に集積されたカプラで、前記導波路のアレイから光を受け取るステップ、を更に有する請求項6乃至13の何れかに記載の方法。
- 光検出器を用いて、前記カプラの位置で光を基準信号として抜き出すステップ、を更に有する請求項14に記載の方法。
- 前記カプラは回折格子カプラを有する、請求項14に記載の方法。
- 前記カプラはミラーカプラを有する、請求項14に記載の方法。
- 前記カプラの上方の1つ以上の角度付きファセットで前記光を広げるステップ、を更に有する請求項14に記載の方法。
- 前記1つ以上の角度付きファセットは、前記絶縁層の中の1つ以上の角度付きファセットを有する、請求項18に記載の方法。
- 前記1つ以上の角度付きファセットは、前記液晶層の中の1つ以上の角度付きファセットを有する、請求項18に記載の方法。
- レーザ源から受け取った前記ソース光を変調するステップ、を更に有する請求項6乃至20の何れかに記載の方法。
- 前記基板に集積されたレーザデバイスで前記ソース光を生成するステップ、を更に有する請求項6乃至21の何れかに記載の方法。
- 実行されるときに請求項6乃至22の何れかに記載の方法で光検出及び測距を実行する命令を格納したコンピュータ読み取り可能記憶媒体を有する製造物。
- 請求項6乃至22の何れかに記載の方法を実行するための処理を実行する手段を有する光検出及び測距用装置。
- 光検出及び測距用の装置であって、
ソース光を、基板に集積された導波路のアレイへと分割して、前記ソース光を導波路パスに通す手段と、
前記基板の導波路上に集積された液晶層に電圧を印加することによって、前記アレイの導波路内の光の位相を動的に調節する手段と、
前記位相を調節された光を前記導波路から標的物へ送信する手段と、
を有する装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/318,604 US9575341B2 (en) | 2014-06-28 | 2014-06-28 | Solid state LIDAR circuit with waveguides tunable to separate phase offsets |
US14/318,604 | 2014-06-28 | ||
PCT/US2015/037988 WO2015200800A1 (en) | 2014-06-28 | 2015-06-26 | Solid state lidar circuit |
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JP2017524918A true JP2017524918A (ja) | 2017-08-31 |
JP6306219B2 JP6306219B2 (ja) | 2018-04-04 |
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JP2016574361A Active JP6306219B2 (ja) | 2014-06-28 | 2015-06-26 | ソリッドステートlidar回路 |
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US (1) | US9575341B2 (ja) |
EP (1) | EP3161512B1 (ja) |
JP (1) | JP6306219B2 (ja) |
CN (1) | CN106461760B (ja) |
TW (1) | TWI592678B (ja) |
WO (1) | WO2015200800A1 (ja) |
Cited By (10)
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WO2020018591A1 (en) * | 2018-07-19 | 2020-01-23 | Silc Technologies, Inc. | Optical sensor system |
WO2020032098A1 (ja) * | 2018-08-10 | 2020-02-13 | 京セラ株式会社 | 電磁波検出装置及び情報取得システム |
WO2020059226A1 (ja) * | 2018-09-19 | 2020-03-26 | パナソニックIpマネジメント株式会社 | 光デバイスおよび光検出システム |
CN112437886A (zh) * | 2018-06-07 | 2021-03-02 | 博莱佳私人有限公司 | 光束定向器 |
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US11126059B2 (en) | 2017-12-28 | 2021-09-21 | Panasonic Intellectual Property Management Co., Ltd. | Optical device |
JP2021526637A (ja) * | 2018-06-05 | 2021-10-07 | シルク テクノロジーズ インコーポレイティッド | Lidar出力信号のステアリングにおける位相の制御 |
JP2023500599A (ja) * | 2019-10-29 | 2023-01-10 | ウェイモ エルエルシー | 光信号ルーティングデバイスおよびシステム |
WO2023053499A1 (ja) * | 2021-09-30 | 2023-04-06 | ソニーセミコンダクタソリューションズ株式会社 | 測距装置、及び測距システム |
US12013491B2 (en) | 2018-03-27 | 2024-06-18 | Panasonic Intellectual Property Management Co., Ltd. | Optical device and photodetection system |
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KR101132841B1 (ko) | 2011-03-07 | 2012-04-02 | 김영재 | 봉합사 |
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US20150378187A1 (en) | 2015-12-31 |
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WO2015200800A1 (en) | 2015-12-30 |
CN106461760A (zh) | 2017-02-22 |
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EP3161512A1 (en) | 2017-05-03 |
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