JP2017517759A5 - - Google Patents
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- JP2017517759A5 JP2017517759A5 JP2016559363A JP2016559363A JP2017517759A5 JP 2017517759 A5 JP2017517759 A5 JP 2017517759A5 JP 2016559363 A JP2016559363 A JP 2016559363A JP 2016559363 A JP2016559363 A JP 2016559363A JP 2017517759 A5 JP2017517759 A5 JP 2017517759A5
- Authority
- JP
- Japan
- Prior art keywords
- contour
- dimensional
- laser pulse
- wafer
- surface shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461970289P | 2014-03-25 | 2014-03-25 | |
| US61/970,289 | 2014-03-25 | ||
| PCT/EP2015/056250 WO2015144700A2 (en) | 2014-03-25 | 2015-03-24 | Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017517759A JP2017517759A (ja) | 2017-06-29 |
| JP2017517759A5 true JP2017517759A5 (OSRAM) | 2018-06-14 |
| JP6554483B2 JP6554483B2 (ja) | 2019-07-31 |
Family
ID=53724226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016559363A Active JP6554483B2 (ja) | 2014-03-25 | 2015-03-24 | 光学構成要素及び／又はウェーハの予め決められた３次元輪郭を発生させる方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10353295B2 (OSRAM) |
| JP (1) | JP6554483B2 (OSRAM) |
| KR (1) | KR101913020B1 (OSRAM) |
| WO (1) | WO2015144700A2 (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI688755B (zh) * | 2014-05-29 | 2020-03-21 | 布朗大學 | 用於判定基板中之應力的光學系統及方法以及具有電腦可執行指令之電腦儲存媒體 |
| WO2017202665A1 (en) * | 2016-05-25 | 2017-11-30 | Asml Netherlands B.V. | Focus and overlay improvement by modifying a patterning device |
| DE102016224690B4 (de) | 2016-12-12 | 2020-07-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich |
| DE102017205629B4 (de) | 2017-04-03 | 2024-10-31 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich |
| DE102017215995B4 (de) * | 2017-09-11 | 2021-05-12 | Carl Zeiss Smt Gmbh | Verfahren zur Untersuchung von photolithographischen Masken |
| EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
| JP7085623B2 (ja) * | 2018-06-12 | 2022-06-16 | 東京エレクトロン株式会社 | 基板処理方法 |
| DE102019201497B3 (de) | 2019-02-06 | 2020-06-18 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung |
| CN109859137B (zh) * | 2019-02-14 | 2023-02-17 | 重庆邮电大学 | 一种广角相机非规则畸变全域校正方法 |
| US11393118B2 (en) * | 2019-06-18 | 2022-07-19 | Kla Corporation | Metrics for asymmetric wafer shape characterization |
| KR102705854B1 (ko) | 2019-07-23 | 2024-09-11 | 에스케이하이닉스 주식회사 | 반도체 소자의 분석 시스템 및 방법 |
| KR20210094835A (ko) | 2020-01-22 | 2021-07-30 | 삼성전자주식회사 | 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법 |
| DE102020201482B4 (de) | 2020-02-06 | 2024-06-27 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich |
| JP7574766B2 (ja) * | 2020-10-30 | 2024-10-29 | Ａｇｃ株式会社 | Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク |
| JP7574767B2 (ja) * | 2020-10-30 | 2024-10-29 | Ａｇｃ株式会社 | Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク |
| WO2022185298A1 (en) | 2021-03-01 | 2022-09-09 | Carl Zeiss Sms Ltd. | Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process |
| US20220336226A1 (en) * | 2021-04-15 | 2022-10-20 | Tokyo Electron Limited | Method of correcting wafer bow using a direct write stress film |
| JP7315123B1 (ja) * | 2021-08-27 | 2023-07-26 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| US11852978B2 (en) * | 2022-03-07 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV lithography system with 3D sensing and tunning modules |
| JP7694474B2 (ja) * | 2022-06-23 | 2025-06-18 | 信越化学工業株式会社 | マスクブランクス用基板及びその製造方法 |
| EP4418304A1 (en) | 2023-02-17 | 2024-08-21 | Carl Zeiss SMS Ltd. | Wafer conditioning |
| EP4471499A1 (en) | 2023-06-02 | 2024-12-04 | Carl Zeiss SMS Ltd. | Ml reflectivity modification |
| CN117878018A (zh) * | 2024-01-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | 一种调节工艺参数的方法、装置及介质 |
| DE102024102631A1 (de) * | 2024-01-30 | 2025-07-31 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Verfahren und laserbearbeitungsanlage zur laserbasierten oberflächenformkorrektur eines spiegels |
| EP4664507A1 (en) | 2024-06-11 | 2025-12-17 | Carl Zeiss SMS Ltd. | Wafer and die shape control |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100735532B1 (ko) * | 2006-03-21 | 2007-07-04 | 삼성전자주식회사 | 기판 내에 팽창부를 포함하는 포토마스크 및 포토마스크의표면 평탄화 방법 |
| KR100791338B1 (ko) | 2006-08-07 | 2008-01-03 | 삼성전자주식회사 | 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법 |
| JP2008096741A (ja) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | マスク、マスクの製造方法及び半導体装置の製造方法 |
| JP4909913B2 (ja) * | 2008-01-10 | 2012-04-04 | 株式会社東芝 | インプリントマスクの製造方法および半導体装置の製造方法 |
| JP2010044287A (ja) * | 2008-08-15 | 2010-02-25 | Renesas Technology Corp | フォトマスクの製造方法 |
| US8735030B2 (en) * | 2010-04-15 | 2014-05-27 | Carl Zeiss Smt Gmbh | Method and apparatus for modifying a substrate surface of a photolithographic mask |
| DE102011078927B4 (de) * | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren zum Korrigieren von Fehlern einer photolithographischen Maske |
| DE102011083774B4 (de) * | 2010-10-04 | 2019-06-13 | Carl Zeiss Sms Ltd. | Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern |
| WO2012103933A1 (en) * | 2011-02-01 | 2012-08-09 | Carl Zeiss Smt Gmbh | Method and apparatus for correcting errors in an euv lithography system |
| JP5960826B2 (ja) * | 2011-08-26 | 2016-08-02 | カール ツァイス エスエムエス リミテッド | フォトリソグラフィのための光学要素を局所的に変形させる方法及び装置 |
-
2015
- 2015-03-24 JP JP2016559363A patent/JP6554483B2/ja active Active
- 2015-03-24 WO PCT/EP2015/056250 patent/WO2015144700A2/en not_active Ceased
- 2015-03-24 KR KR1020167028830A patent/KR101913020B1/ko active Active
-
2016
- 2016-09-22 US US15/272,936 patent/US10353295B2/en active Active
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