JP2017513333A - Memsマイクロホン - Google Patents
Memsマイクロホン Download PDFInfo
- Publication number
- JP2017513333A JP2017513333A JP2016557262A JP2016557262A JP2017513333A JP 2017513333 A JP2017513333 A JP 2017513333A JP 2016557262 A JP2016557262 A JP 2016557262A JP 2016557262 A JP2016557262 A JP 2016557262A JP 2017513333 A JP2017513333 A JP 2017513333A
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- lower electrode
- upper electrode
- mems microphone
- microphone according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000004308 accommodation Effects 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
- H04R7/12—Non-planar diaphragms or cones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
- H04R7/12—Non-planar diaphragms or cones
- H04R7/14—Non-planar diaphragms or cones corrugated, pleated or ribbed
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/16—Mounting or tensioning of diaphragms or cones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
Description
200 支持部分
300 上部極板
400 下部極板
500 収容キャビティ
600 凹部
700 音響孔
800 上部電極
900 下部電極
Claims (11)
- 中央部を貫通して延びる開口部を定める基板と、
前記開口部を跨いで設けられた下部極板と、
前記下部極板に固定された支持部分と、
前記支持部分に積層された上部極板と、
を備える、MEMSマイクロホンであって、
前記支持部分、前記上部極板、及び前記下部極板は、協働して収容キャビティを形成し、前記上部極板及び前記下部極板の少なくとも一方の中央領域は、前記収容キャビティに向いた凹部を備え、前記上部極板は、前記下部極板から絶縁される、MEMSマイクロホン。 - 前記上部極板は、可撓性ダイアフラムであり、前記下部極板は、剛性ダイアフラムである、請求項1に記載のMEMSマイクロホン。
- 前記上部極板は、剛性ダイアフラムであり、前記下部極板は、可撓性ダイアフラムである、請求項1に記載のMEMSマイクロホン。
- 前記上部極板又は前記下部極板は、複数の音響孔を定める、請求項1に記載のMEMSマイクロホン。
- 前記凹部の形状は、円形及び多角形の1つから選択される、請求項1に記載のMEMSマイクロホン。
- 前記上部極板及び前記下部極板は、導電層を備える、請求項1に記載のMEMSマイクロホン。
- 前記基板は、Ge、SiGe、SiC、SiO2及びSi3N4から成るグループから選択された1つで作られる、請求項1に記載のMEMSマイクロホン。
- 前記支持部分は、前記上部極板と前記下部極板とを絶縁するように構成された第1の絶縁層を含む、請求項1に記載のMEMSマイクロホン。
- 前記支持部分は、環状構造及び多角形フレーム構造のうちの1つを含む、請求項1に記載のMEMSマイクロホン。
- 前記支持部分は、前記支持部分の本体から独立した1つの支持支柱を備える、請求項1に記載のMEMSマイクロホン。
- 上部電極及び下部電極をさらに備え、前記上部電極及び前記下部電極は、P型シリコン及びN型シリコンから成るグループから選択された1つで作られ、前記上部電極は、前記上部極板に電気結合し、前記下部電極は、前記下部極板に電気結合する、請求項1に記載のMEMSマイクロホン。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410376030.2A CN105338458B (zh) | 2014-08-01 | 2014-08-01 | Mems麦克风 |
CN201410376030.2 | 2014-08-01 | ||
PCT/CN2015/082285 WO2016015530A1 (zh) | 2014-08-01 | 2015-06-25 | Mems麦克风 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017513333A true JP2017513333A (ja) | 2017-05-25 |
JP6307171B2 JP6307171B2 (ja) | 2018-04-04 |
Family
ID=55216742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016557262A Active JP6307171B2 (ja) | 2014-08-01 | 2015-06-25 | Memsマイクロホン |
Country Status (5)
Country | Link |
---|---|
US (1) | US10003890B2 (ja) |
EP (1) | EP3177038B1 (ja) |
JP (1) | JP6307171B2 (ja) |
CN (1) | CN105338458B (ja) |
WO (1) | WO2016015530A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101776725B1 (ko) * | 2015-12-11 | 2017-09-08 | 현대자동차 주식회사 | 멤스 마이크로폰 및 그 제조방법 |
US9648433B1 (en) * | 2015-12-15 | 2017-05-09 | Robert Bosch Gmbh | Absolute sensitivity of a MEMS microphone with capacitive and piezoelectric electrodes |
CN114697841A (zh) * | 2020-12-30 | 2022-07-01 | 无锡华润上华科技有限公司 | Mems麦克风及其振膜结构 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007067483A (ja) * | 2005-08-29 | 2007-03-15 | Yamaha Corp | コンデンサマイクロホン及びコンデンサマイクロホンの製造方法 |
JP2008017395A (ja) * | 2006-07-10 | 2008-01-24 | Yamaha Corp | 圧力センサ及びその製造方法 |
US20100072561A1 (en) * | 2008-09-22 | 2010-03-25 | Solid State System Co., Ltd. | Method for fabricating micro-electro-mechanical system (mems) device |
JP2010103701A (ja) * | 2008-10-22 | 2010-05-06 | Rohm Co Ltd | Memsセンサ |
US20100277229A1 (en) * | 2009-04-30 | 2010-11-04 | Solid State System Co., Ltd. | Microelectromechanical system (mems) device with senstivity trimming circuit and trimming process |
US20120090398A1 (en) * | 2010-10-14 | 2012-04-19 | Solid State System Co., Ltd. | Micro-electromechanical systems (mems) structure |
US20120319219A1 (en) * | 2011-06-15 | 2012-12-20 | Robert Bosch Gmbh | Epitaxial silicon cmos-mems microphones and method for manufacturing |
US20130056840A1 (en) * | 2011-09-02 | 2013-03-07 | Nxp B.V. | Acoustic transducers with perforated membranes |
Family Cites Families (17)
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JP3611779B2 (ja) * | 1999-12-09 | 2005-01-19 | シャープ株式会社 | 電気信号−音響信号変換器及びその製造方法並びに電気信号−音響変換装置 |
US7405924B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
US7152481B2 (en) * | 2005-04-13 | 2006-12-26 | Yunlong Wang | Capacitive micromachined acoustic transducer |
JP5374077B2 (ja) * | 2008-06-16 | 2013-12-25 | ローム株式会社 | Memsセンサ |
CN101841758A (zh) | 2010-03-08 | 2010-09-22 | 瑞声声学科技(深圳)有限公司 | 电容mems麦克风 |
CN102264021A (zh) * | 2010-12-07 | 2011-11-30 | 歌尔声学股份有限公司 | 一种mems麦克风芯片 |
CN102740204A (zh) * | 2011-04-08 | 2012-10-17 | 美律实业股份有限公司 | 具有立体振膜结构的微机电麦克风晶片及其制造方法 |
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CN203446028U (zh) * | 2013-09-13 | 2014-02-19 | 山东共达电声股份有限公司 | Mems麦克风及电子设备 |
-
2014
- 2014-08-01 CN CN201410376030.2A patent/CN105338458B/zh active Active
-
2015
- 2015-06-25 WO PCT/CN2015/082285 patent/WO2016015530A1/zh active Application Filing
- 2015-06-25 EP EP15827631.1A patent/EP3177038B1/en active Active
- 2015-06-25 JP JP2016557262A patent/JP6307171B2/ja active Active
- 2015-06-25 US US15/119,878 patent/US10003890B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007067483A (ja) * | 2005-08-29 | 2007-03-15 | Yamaha Corp | コンデンサマイクロホン及びコンデンサマイクロホンの製造方法 |
JP2008017395A (ja) * | 2006-07-10 | 2008-01-24 | Yamaha Corp | 圧力センサ及びその製造方法 |
US20100072561A1 (en) * | 2008-09-22 | 2010-03-25 | Solid State System Co., Ltd. | Method for fabricating micro-electro-mechanical system (mems) device |
JP2010103701A (ja) * | 2008-10-22 | 2010-05-06 | Rohm Co Ltd | Memsセンサ |
US20100277229A1 (en) * | 2009-04-30 | 2010-11-04 | Solid State System Co., Ltd. | Microelectromechanical system (mems) device with senstivity trimming circuit and trimming process |
US20120090398A1 (en) * | 2010-10-14 | 2012-04-19 | Solid State System Co., Ltd. | Micro-electromechanical systems (mems) structure |
US20120319219A1 (en) * | 2011-06-15 | 2012-12-20 | Robert Bosch Gmbh | Epitaxial silicon cmos-mems microphones and method for manufacturing |
US20130056840A1 (en) * | 2011-09-02 | 2013-03-07 | Nxp B.V. | Acoustic transducers with perforated membranes |
Also Published As
Publication number | Publication date |
---|---|
EP3177038A1 (en) | 2017-06-07 |
CN105338458B (zh) | 2019-06-07 |
EP3177038A4 (en) | 2018-03-14 |
WO2016015530A1 (zh) | 2016-02-04 |
EP3177038B1 (en) | 2020-03-18 |
US10003890B2 (en) | 2018-06-19 |
CN105338458A (zh) | 2016-02-17 |
US20170070824A1 (en) | 2017-03-09 |
JP6307171B2 (ja) | 2018-04-04 |
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