JP2017510977A5 - - Google Patents

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Publication number
JP2017510977A5
JP2017510977A5 JP2016550260A JP2016550260A JP2017510977A5 JP 2017510977 A5 JP2017510977 A5 JP 2017510977A5 JP 2016550260 A JP2016550260 A JP 2016550260A JP 2016550260 A JP2016550260 A JP 2016550260A JP 2017510977 A5 JP2017510977 A5 JP 2017510977A5
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JP
Japan
Prior art keywords
surfactant
cmp
tin
cmp composition
hydrogen peroxide
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JP2016550260A
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English (en)
Japanese (ja)
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JP6538701B2 (ja
JP2017510977A (ja
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Priority claimed from PCT/US2015/014815 external-priority patent/WO2015120269A1/en
Publication of JP2017510977A publication Critical patent/JP2017510977A/ja
Publication of JP2017510977A5 publication Critical patent/JP2017510977A5/ja
Application granted granted Critical
Publication of JP6538701B2 publication Critical patent/JP6538701B2/ja
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JP2016550260A 2014-02-05 2015-02-06 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法 Active JP6538701B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461936009P 2014-02-05 2014-02-05
US61/936,009 2014-02-05
PCT/US2015/014815 WO2015120269A1 (en) 2014-02-05 2015-02-06 Cmp method for suppression of titanium nitride and titanium/titanium nitride removal

Publications (3)

Publication Number Publication Date
JP2017510977A JP2017510977A (ja) 2017-04-13
JP2017510977A5 true JP2017510977A5 (enExample) 2018-03-22
JP6538701B2 JP6538701B2 (ja) 2019-07-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016550260A Active JP6538701B2 (ja) 2014-02-05 2015-02-06 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法

Country Status (4)

Country Link
EP (1) EP3103133A4 (enExample)
JP (1) JP6538701B2 (enExample)
KR (1) KR102307254B1 (enExample)
WO (1) WO2015120269A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
KR20220156623A (ko) * 2020-03-30 2022-11-25 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
TW202138505A (zh) * 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
TWI878613B (zh) * 2020-09-18 2025-04-01 美商Ｃｍｃ材料有限責任公司 用於碳基薄膜之選擇性拋光之以二氧化矽為主的漿料

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US6054422A (en) * 1999-02-19 2000-04-25 Ppt Research, Inc. Cutting and lubricating composition for use with a wire cutting apparatus
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
DE102004016600A1 (de) * 2004-04-03 2005-10-27 Degussa Ag Dispersion zum chemisch-mechanischen Polieren von Metalloberflächen enthaltend Metalloxidpartikel und ein kationisches Polymer
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
JP2007207908A (ja) * 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2008004621A (ja) 2006-06-20 2008-01-10 Toshiba Corp Ｃｕ膜ＣＭＰ用スラリー、研磨方法および半導体装置の製造方法
US7452816B2 (en) * 2006-07-26 2008-11-18 Micron Technology, Inc. Semiconductor processing method and chemical mechanical polishing methods
US20080203059A1 (en) * 2007-02-27 2008-08-28 Cabot Microelectronics Corporation Dilutable cmp composition containing a surfactant
WO2009017734A1 (en) * 2007-07-31 2009-02-05 Aspt, Inc. Slurry containing multi-oxidizer and nano-sized diamond abrasive for tungsten cmp
JP2009064881A (ja) * 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JP5472585B2 (ja) * 2008-05-22 2014-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
MY156687A (en) * 2009-06-22 2016-03-15 Cabot Microelectronics Corp Cmp compositions and method for suppressing polysilicon removal rates
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications

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