JP2017506826A - ソーラーセル及びその製造方法 - Google Patents
ソーラーセル及びその製造方法 Download PDFInfo
- Publication number
- JP2017506826A JP2017506826A JP2016551267A JP2016551267A JP2017506826A JP 2017506826 A JP2017506826 A JP 2017506826A JP 2016551267 A JP2016551267 A JP 2016551267A JP 2016551267 A JP2016551267 A JP 2016551267A JP 2017506826 A JP2017506826 A JP 2017506826A
- Authority
- JP
- Japan
- Prior art keywords
- passivation layer
- solar cell
- dopant
- region
- chemical species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 311
- 238000002161 passivation Methods 0.000 claims abstract description 310
- 239000013626 chemical specie Substances 0.000 claims abstract description 119
- 230000000694 effects Effects 0.000 claims abstract description 105
- 238000000137 annealing Methods 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 51
- 229910052739 hydrogen Inorganic materials 0.000 claims description 39
- 239000001257 hydrogen Substances 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 230000009849 deactivation Effects 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 11
- 229910052805 deuterium Inorganic materials 0.000 claims description 11
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 229910052716 thallium Inorganic materials 0.000 claims description 8
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 230000000415 inactivating effect Effects 0.000 claims description 2
- 230000002779 inactivation Effects 0.000 claims 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 291
- 239000002245 particle Substances 0.000 description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 125000004429 atom Chemical group 0.000 description 21
- 239000010408 film Substances 0.000 description 21
- 241000894007 species Species 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 241000206761 Bacillariophyta Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 125000004431 deuterium atom Chemical group 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
101 n型シリコン基板
102 p+型シリコンエミッタ102
103 反射防止膜
104 金属グリッド線
200、300 ソーラーセルパネル
201、301 フレーム
202、302 ソーラーセル
203、303 前面ガラスシート
204、304 背面シート
305、306 封止材
400 ソーラーセル
401 基板
402 バスバー
403 グリッド線
501、601、701、801 基板
502、602、802 ドープ領域
503、603、703,713、803 パッシベーション層
504 グリッド線
505、605、705、715、805 化学種
507、604,704、714、804 グリッド線コンタクト
508、606、706、716、806 ドーパント粒子
513、609、709、719、807 電気的に不活性な複合体
525 ドープ領域とパッシベーション層との間の界面
702 選択エミッタ
811 ソーラーセル
813 ホルダ
821、822 電極
901 処理チャンバ
902 処理ガス
903 RF電源
904 プラズマ源
905 プラズマ
906 台座
907 加工物
908 原子
909 DC電源
910 RF電源
911 コントローラ
912 プロセッサ
913 温度コントローラ
914 入出力装置
915 メモリ
916 圧力制御システム
917 排気口
Claims (33)
- ソーラーセルの製造方法であって、
ソーラーセルの領域の第1の部分にパッシベーション層を堆積させ、前記領域の第2の部分にグリッド線を堆積させるステップと、
前記パッシベーション層を第1の温度でアニーリングして前記パッシベーション層から化学種を追い出し、前記第1の部分のドーパントの電気的活性を不活性化するステップと、
を含む方法。 - 前記第1の部分の前記ドーパントを前記パッシベーション層からの前記化学種と反応させることにより、前記ドーパントの前記電気的活性を不活性化して電気的に不活性な複合体を形成する、請求項1に記載の方法。
- 前記パッシベーション層は、窒化シリコン、酸化シリコン、酸化アルミニウム、又はこれらのいずれかの組み合わせであり、前記化学種は、原子状水素、重水素、リチウム、銅、又はこれらのいずれかの組み合わせを含む、請求項1に記載の方法。
- 前記第1の部分の表面部分における活性ドーパントの濃度が前記表面部分から離れた距離における活性ドーパントの濃度よりも低いドーパントプロファイルを生じるように前記第1の温度を調整するステップを更に含む、請求項1に記載の方法。
- 前記ソーラーセルにバイアス電圧を付与して不活性化を制御するステップを更に含む、請求項1に記載の方法。
- 前記第1の温度は、85℃〜400℃である、請求項1に記載の方法。
- 前記パッシベーション層の厚さは、1ナノメートル〜500ナノメートルである、請求項1に記載の方法。
- 前記第1の温度よりも高い第2の温度で前記グリッド線をアニーリングして、前記第2の部分に電気コンタクトを形成するステップを更に含む、請求項1に記載の方法。
- 前記パッシベーション層の前記アニーリングの時間を調整して不活性化を制御するステップを更に含む、請求項1に記載の方法。
- 前記パッシベーション層は、前記化学種が前記第2の部分の前記ドーパントを不活性化するのを防ぐマスクとして機能する前記グリッド線上に堆積させる、請求項1に記載の方法。
- ソーラーセルの製造方法であって、
ソーラーセルの、第1の部分及び第2の部分を含む領域にパッシベーション層を堆積させるステップと、
前記第2の部分を覆う前記パッシベーション層上にグリッド線を堆積させるステップと、
前記グリッド線をアニーリングして、前記第2の部分に電気コンタクトを形成するステップと、
前記パッシベーション層をアニーリングして前記パッシベーション層から化学種を追い出し、前記第1の部分のドーパントの電気的活性を不活性化するステップと、
を含む方法。 - 前記グリッド線のアニーリングは、前記パッシベーション層のアニーリングの温度よりも高い温度で行われる、請求項11に記載の方法。
- 前記パッシベーション層は、窒化シリコン、酸化シリコン、酸化アルミニウム、又はこれらのいずれかの組み合わせを含み、前記化学種は、水素、重水素、リチウム、銅、又はこれらのいずれかの組み合わせを含む、請求項11に記載の方法。
- 前記ソーラーセルにバイアス電圧を付与して不活性化を制御するステップを更に含む、請求項11に記載の方法。
- 前記パッシベーション層の厚さは、1ナノメートル〜500ナノメートルである、請求項11に記載の方法。
- 前記パッシベーション層の前記アニーリングの時間を調整して不活性化を制御するステップを更に含む、請求項11に記載の方法。
- 前記ドーパントは、ホウ素(B)、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、タリウム(Tl)、水素、又はこれらのいずれかの組み合わせである、請求項11に記載の方法。
- 前記ドーパントは、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、ビスマス(Bi)、水素、又はこれらのいずれかの組み合わせである、請求項11に記載の方法。
- ソーラーセルであって、
基板上に形成された、第1の部分及び第2の部分を含む第1の領域と、
前記第2の部分上の第1のグリッド線と、
前記第1の部分及び前記第1のグリッド線上のパッシベーション層と、を備え、
前記第1の部分の第1のドーパントの一部の電気的活性は不活性化される、ソーラーセル。 - 前記第1のドーパントの前記一部は、前記パッシベーション層からの化学種と結合し、電気的に不活性である、請求項19に記載のソーラーセル。
- 前記パッシベーション層は、窒化シリコン、酸化シリコン、酸化アルミニウム、又はこれらのいずれかの組み合わせであり、前記化学種は、原子状水素、重水素、リチウム、銅、又はこれらのいずれかの組み合わせを含む、請求項19に記載のソーラーセル。
- 前記パッシベーション層は、SixHyNzを含み、yは、約1重量%〜70重量%である、請求項19に記載のソーラーセル。
- 前記領域は、ソーラーセル基板上に形成された選択エミッタである、請求項19に記載のソーラーセル。
- 前記領域は、前記ソーラーセルの裏面電界である、請求項19に記載のソーラーセル。
- 前記第1の部分の表面部分における電気的に活性な第1のドーパント濃度は、前記表面部分から離れた距離における前記電気的に活性な第1のドーパント濃度よりも低い、請求項19に記載のソーラーセル。
- 前記第1のドーパントは、ホウ素(B)、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、タリウム(Tl)、水素、又はこれらのいずれかの組み合わせである、請求項19に記載のソーラーセル。
- 前記第1のドーパントは、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、ビスマス(Bi)、水素、又はこれらのいずれかの組み合わせである、請求項19に記載のソーラーセル。
- ソーラーセルの製造方法であって、
チャンバ内に配置されたソーラーセルの領域の第1の部分に化学種を供給し、前記第1の部分にパッシベーション層を堆積させ、前記領域の第2の部分を覆ってグリッド線を堆積させるステップと、
前記化学種を用いて、前記第1の部分のドーパントの電気的活性を不活性化するステップと、
前記ソーラーセルにバイアス電圧を付与して前記不活性化を制御するステップと、
を含む方法。 - 前記第2の部分の前記ドーパントは、電気的に活性に保たれ、前記グリッド線は、不活性化のためのマスクとして使用される、請求項28に記載の方法。
- 前記バイアス電圧は、定常状態電圧、パルス電圧、又はこれらの両方である、請求項28に記載の方法。
- 前記パッシベーション層を第1の温度でアニーリングして前記パッシベーション層から化学種を追い出し、前記第1の部分の前記ドーパントの前記電気的活性を不活性化するステップを更に含む、請求項28に記載の方法。
- 前記化学種の濃度を調整して前記不活性化を制御するステップを更に含む、請求項28に記載の方法。
- 前記第1の部分の前記ドーパントの前記電気的活性は、前記パッシベーション層の堆積中に前記第1の部分に供給される前記化学種を用いて不活性化される、請求項19に記載のソーラーセル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/178,216 | 2014-02-11 | ||
US14/178,216 US9960287B2 (en) | 2014-02-11 | 2014-02-11 | Solar cells and methods of fabrication thereof |
PCT/US2015/013104 WO2015123013A1 (en) | 2014-02-11 | 2015-01-27 | Solar cells and methods of fabrication thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017506826A true JP2017506826A (ja) | 2017-03-09 |
Family
ID=53775699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016551267A Pending JP2017506826A (ja) | 2014-02-11 | 2015-01-27 | ソーラーセル及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9960287B2 (ja) |
EP (1) | EP3105797A4 (ja) |
JP (1) | JP2017506826A (ja) |
KR (1) | KR20160119792A (ja) |
CN (1) | CN106030826A (ja) |
TW (1) | TW201539777A (ja) |
WO (1) | WO2015123013A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL421831A1 (pl) * | 2017-06-08 | 2018-12-17 | Euro Com Project Nowinski Zamroczynska Spolka Jawna | Moduł fotowoltaiczny |
EP3678192B1 (en) * | 2017-08-29 | 2022-03-30 | KYOCERA Corporation | Solar cell element and solar cell module |
US12009451B2 (en) | 2018-07-30 | 2024-06-11 | mPower Technology, Inc. | In-situ rapid annealing and operation of solar cells for extreme environment applications |
WO2021087331A1 (en) * | 2019-10-30 | 2021-05-06 | mPower Technology, Inc. | In-situ rapid annealing and operation of solar cells for extreme environment applications |
CN110676349B (zh) * | 2019-10-10 | 2022-02-01 | 浙江晶科能源有限公司 | 一种电镀金属化电极的制备方法 |
CN110931600B (zh) * | 2019-11-16 | 2021-03-09 | 江西昌大高新能源材料技术有限公司 | 一种hacl太阳电池的制备方法 |
CN111952414B (zh) * | 2020-08-21 | 2023-02-28 | 晶科绿能(上海)管理有限公司 | 硅基半导体器件的切割后钝化方法和硅基半导体器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344883A (ja) * | 2005-06-10 | 2006-12-21 | Sharp Corp | 太陽電池の製造方法 |
US20110176353A1 (en) * | 2008-12-23 | 2011-07-21 | Zhiyong Li | Memristive Device Having a Porous Dopant Diffusion Element |
WO2013119574A1 (en) * | 2012-02-06 | 2013-08-15 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4142195A (en) | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
JPH04356972A (ja) | 1991-06-03 | 1992-12-10 | Sharp Corp | 光電変換素子の製造方法 |
JPH05326938A (ja) | 1992-05-22 | 1993-12-10 | Matsushita Electron Corp | 薄膜トランジスタおよびその製造方法 |
JPH0613639A (ja) | 1992-06-24 | 1994-01-21 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH07194965A (ja) | 1993-12-28 | 1995-08-01 | Kanegafuchi Chem Ind Co Ltd | 成膜方法及び成膜装置 |
US5871591A (en) | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
EP0851511A1 (en) | 1996-12-24 | 1998-07-01 | IMEC vzw | Semiconductor device with two selectively diffused regions |
US6339013B1 (en) | 1997-05-13 | 2002-01-15 | The Board Of Trustees Of The University Of Arkansas | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
JP3896241B2 (ja) | 1999-05-24 | 2007-03-22 | 株式会社リコー | 用紙搬送経路切替機構及び画像形成装置 |
US6638839B2 (en) | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
JP2003128411A (ja) | 2001-10-18 | 2003-05-08 | Sharp Corp | 板状シリコン、板状シリコンの製造方法および太陽電池 |
JP2003273382A (ja) | 2002-03-12 | 2003-09-26 | Kyocera Corp | 太陽電池素子 |
US8405183B2 (en) | 2003-04-14 | 2013-03-26 | S'Tile Pole des Eco-Industries | Semiconductor structure |
US7202143B1 (en) | 2003-10-23 | 2007-04-10 | The Board Of Trustees Of The University Of Arkansas | Low temperature production of large-grain polycrystalline semiconductors |
US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
JP2004228589A (ja) | 2004-03-03 | 2004-08-12 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US20060208257A1 (en) | 2005-03-15 | 2006-09-21 | Branz Howard M | Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates |
JP2006310368A (ja) | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
US7687334B2 (en) | 2006-03-23 | 2010-03-30 | Board Of Trustees Of The University Of Arkansas | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon |
KR100877821B1 (ko) | 2006-05-01 | 2009-01-12 | 엘지전자 주식회사 | 실리콘 태양전지의 선택적 에미터의 제조방법 |
FR2906404B1 (fr) | 2006-09-21 | 2008-12-19 | Commissariat Energie Atomique | Procede de metallisation de cellules photovoltaiques a multiples recuits |
US7601215B1 (en) | 2006-11-17 | 2009-10-13 | Alliance For Sustainable Energy, Llc | Method for rapid, controllable growth and thickness, of epitaxial silicon films |
CA2683524A1 (en) | 2007-05-17 | 2008-11-27 | Day4 Energy Inc. | Photovoltaic cell with shallow emitter |
US20080290368A1 (en) | 2007-05-21 | 2008-11-27 | Day4 Energy, Inc. | Photovoltaic cell with shallow emitter |
US8642450B2 (en) | 2007-11-09 | 2014-02-04 | Alliance For Sustainable Energy, Llc | Low temperature junction growth using hot-wire chemical vapor deposition |
US20090126786A1 (en) | 2007-11-13 | 2009-05-21 | Advent Solar, Inc. | Selective Emitter and Texture Processes for Back Contact Solar Cells |
CN102099923B (zh) | 2008-06-11 | 2016-04-27 | 因特瓦克公司 | 使用注入的太阳能电池制作 |
EP2396810B1 (en) | 2009-02-11 | 2016-06-08 | NewSouth Innovations Pty Limited | Photovoltaic device structure and method |
US20110308615A1 (en) | 2009-02-12 | 2011-12-22 | Alliance For Sustainable Energy, Llc | Crystal silicon processes and products |
US20110039034A1 (en) | 2009-08-11 | 2011-02-17 | Helen Maynard | Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material |
WO2011035272A1 (en) | 2009-09-20 | 2011-03-24 | Intermolecular, Inc. | Methods of building crystalline silicon solar cells for use in combinatorial screening |
TWI449198B (zh) | 2009-10-05 | 2014-08-11 | Nat Univ Tsing Hua | Selective emitter solar cell process |
WO2011156454A2 (en) | 2010-06-08 | 2011-12-15 | Board Of Trustees Of The University Of Arkansas | Crystallization of multi-layered amorphous films |
TWI455342B (zh) | 2011-08-30 | 2014-10-01 | Nat Univ Tsing Hua | Solar cell with selective emitter structure and manufacturing method thereof |
US8822262B2 (en) | 2011-12-22 | 2014-09-02 | Sunpower Corporation | Fabricating solar cells with silicon nanoparticles |
-
2014
- 2014-02-11 US US14/178,216 patent/US9960287B2/en active Active
-
2015
- 2015-01-27 WO PCT/US2015/013104 patent/WO2015123013A1/en active Application Filing
- 2015-01-27 KR KR1020167023127A patent/KR20160119792A/ko active IP Right Grant
- 2015-01-27 CN CN201580008301.1A patent/CN106030826A/zh active Pending
- 2015-01-27 EP EP15748843.8A patent/EP3105797A4/en not_active Withdrawn
- 2015-01-27 JP JP2016551267A patent/JP2017506826A/ja active Pending
- 2015-02-05 TW TW104103894A patent/TW201539777A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344883A (ja) * | 2005-06-10 | 2006-12-21 | Sharp Corp | 太陽電池の製造方法 |
US20110176353A1 (en) * | 2008-12-23 | 2011-07-21 | Zhiyong Li | Memristive Device Having a Porous Dopant Diffusion Element |
WO2013119574A1 (en) * | 2012-02-06 | 2013-08-15 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
Non-Patent Citations (1)
Title |
---|
B. BAZER-BACHI ET AL.: "On the hydrogen passivation of highly doped emitters", 24TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, JPN6017042303, September 2009 (2009-09-01), pages 1868 - 1871 * |
Also Published As
Publication number | Publication date |
---|---|
WO2015123013A1 (en) | 2015-08-20 |
EP3105797A1 (en) | 2016-12-21 |
TW201539777A (zh) | 2015-10-16 |
CN106030826A (zh) | 2016-10-12 |
US9960287B2 (en) | 2018-05-01 |
EP3105797A4 (en) | 2017-10-11 |
US20150228810A1 (en) | 2015-08-13 |
KR20160119792A (ko) | 2016-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017506826A (ja) | ソーラーセル及びその製造方法 | |
US7776727B2 (en) | Methods of emitter formation in solar cells | |
JP4829211B2 (ja) | 結晶シリコンからなる太陽電池への高速水素パッシベーションの方法 | |
TWI743663B (zh) | 使用離子植入的太陽能電池射極區製造 | |
KR101991767B1 (ko) | 넓은 밴드갭 반도체 재료를 갖는 이미터 영역을 구비한 태양 전지 | |
US8168462B2 (en) | Passivation process for solar cell fabrication | |
JP2020129666A (ja) | 太陽電池内の相対的ドーパント濃度レベル | |
KR20080002657A (ko) | 반도체 구조, 태양 전지 및 광 전지 디바이스 제조 방법 | |
KR20130109992A (ko) | 태양 전지의 이미터 영역을 제조하는 방법 | |
JP2010517271A (ja) | 多接合太陽電池並びにそれを形成するための方法及び装置 | |
US20200098945A1 (en) | Process for producing a photovoltaic solar cell having a heterojunction and a diffused-in emitter region | |
EP2822042B1 (en) | Photovoltaic device | |
EP2448002B1 (en) | Passivation layer structure of semconductor device and method for forming the same | |
US20090101201A1 (en) | Nip-nip thin-film photovoltaic structure | |
US20100304527A1 (en) | Methods of thermal processing a solar cell | |
US20100240170A1 (en) | Method of fabricating solar cell | |
JP2012517700A (ja) | 光起電力電池における負に帯電したパッシベーション層 | |
TWI608629B (zh) | 太陽能電池及其製造方法 | |
KR20210043013A (ko) | 태양 전지의 수광 표면의 패시베이션 | |
KR101415320B1 (ko) | 기판형 태양전지의 제조방법 | |
KR20100058819A (ko) | 기판형 태양전지의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170925 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171106 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180206 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180406 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180702 |