JP2017505443A5 - - Google Patents

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Publication number
JP2017505443A5
JP2017505443A5 JP2016550810A JP2016550810A JP2017505443A5 JP 2017505443 A5 JP2017505443 A5 JP 2017505443A5 JP 2016550810 A JP2016550810 A JP 2016550810A JP 2016550810 A JP2016550810 A JP 2016550810A JP 2017505443 A5 JP2017505443 A5 JP 2017505443A5
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JP
Japan
Prior art keywords
ion
field effect
sensor
effect transistor
selective field
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Pending
Application number
JP2016550810A
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English (en)
Japanese (ja)
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JP2017505443A (ja
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Priority claimed from ES201430180A external-priority patent/ES2542927R1/es
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Publication of JP2017505443A publication Critical patent/JP2017505443A/ja
Publication of JP2017505443A5 publication Critical patent/JP2017505443A5/ja
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JP2016550810A 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法 Pending JP2017505443A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ESP201430180 2014-02-11
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (2)

Publication Number Publication Date
JP2017505443A JP2017505443A (ja) 2017-02-16
JP2017505443A5 true JP2017505443A5 (enExample) 2017-12-21

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ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016550810A Pending JP2017505443A (ja) 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法

Country Status (9)

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US (3) US10067085B2 (enExample)
EP (1) EP3106865B1 (enExample)
JP (1) JP2017505443A (enExample)
KR (1) KR20160119096A (enExample)
CN (1) CN106104265A (enExample)
CA (1) CA2938155A1 (enExample)
ES (2) ES2542927R1 (enExample)
MX (1) MX2016010017A (enExample)
WO (1) WO2015121516A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2542927R1 (es) 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
WO2018210803A1 (en) * 2017-05-15 2018-11-22 Analog Devices Global Unlimited Company Integrated ion sensing apparatus and methods
WO2019093907A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
WO2021146105A1 (en) * 2020-01-13 2021-07-22 Beckman Coulter, Inc. Solid state ion selective electrodes
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
EP0155725A1 (en) 1984-02-27 1985-09-25 Sentron v.o.f. Ion concentration measurement system that employs measuring and reference field effect transistor electrodes sensitive to the same ion
JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
TW533593B (en) * 2002-05-20 2003-05-21 Univ Nat Yunlin Sci & Tech Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof
GB2416210B (en) * 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP4731544B2 (ja) * 2007-12-17 2011-07-27 株式会社日立製作所 生体分子検出装置及びそれを用いた生体分子検出方法
WO2009119319A1 (ja) * 2008-03-27 2009-10-01 株式会社堀場製作所 イオンセンサ
WO2010017192A1 (en) * 2008-08-05 2010-02-11 Ph Diagnostics Inc. Apparatus, method and system for determining a physiological condition within a mammal
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US20130158378A1 (en) * 2011-09-22 2013-06-20 The Ohio State University Ionic barrier for floating gate in vivo biosensors
US20130084214A1 (en) * 2011-09-30 2013-04-04 Frederick Quincy Johnson Ion-Selective Ion Concentration Meter
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US9459234B2 (en) * 2011-10-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) CMOS compatible BioFET
US9689835B2 (en) * 2011-10-31 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Amplified dual-gate bio field effect transistor
US8963216B2 (en) * 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
EP2986966B1 (en) * 2013-04-18 2023-06-07 Solenis Technologies Cayman, L.P. Device and method for detecting and analyzing deposits
KR101540254B1 (ko) * 2013-06-24 2015-07-30 경북대학교 산학협력단 당을 감지하는 화학감각수용체를 발현하는 세포를 이용한 바이오 센서 및 이를 포함하는 알츠하이머 진단 기기
US9978689B2 (en) * 2013-12-18 2018-05-22 Nxp Usa, Inc. Ion sensitive field effect transistors with protection diodes and methods of their fabrication
ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
US9733210B2 (en) * 2014-12-31 2017-08-15 International Business Machines Corporation Nanofluid sensor with real-time spatial sensing

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