ES2542927R1 - Sensor de iones basado en medida diferencial, método de fabricación y método de medida - Google Patents

Sensor de iones basado en medida diferencial, método de fabricación y método de medida Download PDF

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Publication number
ES2542927R1
ES2542927R1 ES201430180A ES201430180A ES2542927R1 ES 2542927 R1 ES2542927 R1 ES 2542927R1 ES 201430180 A ES201430180 A ES 201430180A ES 201430180 A ES201430180 A ES 201430180A ES 2542927 R1 ES2542927 R1 ES 2542927R1
Authority
ES
Spain
Prior art keywords
measurement
manufacturing
sensor
ion sensor
sensor based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES201430180A
Other languages
English (en)
Spanish (es)
Other versions
ES2542927A2 (es
Inventor
Antoni BALDI COLL
Carlos Domínguez Horna
Cecilia JIMÉNEZ JORQUERA
Cesar FERNÁNDEZ SÁNCHEZ
Andreu Llobera Adan
Angel Merlos Domingo
Alfredo CADARSO BUSTO
Isabel BURDALLO BAUTISTA
Ferran VERA GRAS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES201430180A priority Critical patent/ES2542927R1/es
Priority to KR1020167021498A priority patent/KR20160119096A/ko
Priority to PCT/ES2015/070063 priority patent/WO2015121516A1/es
Priority to EP15708848.5A priority patent/EP3106865B1/en
Priority to US15/113,381 priority patent/US10067085B2/en
Priority to ES15708848T priority patent/ES2818111T3/es
Priority to CA2938155A priority patent/CA2938155A1/en
Priority to MX2016010017A priority patent/MX2016010017A/es
Priority to CN201580007758.0A priority patent/CN106104265A/zh
Priority to JP2016550810A priority patent/JP2017505443A/ja
Publication of ES2542927A2 publication Critical patent/ES2542927A2/es
Publication of ES2542927R1 publication Critical patent/ES2542927R1/es
Priority to US16/021,926 priority patent/US10436743B2/en
Priority to US16/530,574 priority patent/US11029278B2/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
ES201430180A 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida Granted ES2542927R1 (es)

Priority Applications (12)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
MX2016010017A MX2016010017A (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y metodo de fabricacion.
CN201580007758.0A CN106104265A (zh) 2014-02-11 2015-01-29 基于差分测量的离子传感器和制造方法
EP15708848.5A EP3106865B1 (en) 2014-02-11 2015-01-29 Ion sensor based on differential measurement, and production method
US15/113,381 US10067085B2 (en) 2014-02-11 2015-01-29 Ion sensor based on differential measurement, and production method
ES15708848T ES2818111T3 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación
CA2938155A CA2938155A1 (en) 2014-02-11 2015-01-29 Ion sensor based on differential measurement and manufacturing method
KR1020167021498A KR20160119096A (ko) 2014-02-11 2015-01-29 차동 측정 기반 이온 센서 및 그 제조 방법
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación
JP2016550810A JP2017505443A (ja) 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法
US16/021,926 US10436743B2 (en) 2014-02-11 2018-06-28 Ion sensor based on differential measurement, and production method
US16/530,574 US11029278B2 (en) 2014-02-11 2019-08-02 Ion sensor based on differential measurement, and production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida

Publications (2)

Publication Number Publication Date
ES2542927A2 ES2542927A2 (es) 2015-08-12
ES2542927R1 true ES2542927R1 (es) 2015-09-09

Family

ID=52633296

Family Applications (2)

Application Number Title Priority Date Filing Date
ES201430180A Granted ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES15708848T Active ES2818111T3 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES15708848T Active ES2818111T3 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Country Status (9)

Country Link
US (3) US10067085B2 (enExample)
EP (1) EP3106865B1 (enExample)
JP (1) JP2017505443A (enExample)
KR (1) KR20160119096A (enExample)
CN (1) CN106104265A (enExample)
CA (1) CA2938155A1 (enExample)
ES (2) ES2542927R1 (enExample)
MX (1) MX2016010017A (enExample)
WO (1) WO2015121516A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2542927R1 (es) 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
WO2018210803A1 (en) * 2017-05-15 2018-11-22 Analog Devices Global Unlimited Company Integrated ion sensing apparatus and methods
WO2019093907A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
WO2021146105A1 (en) * 2020-01-13 2021-07-22 Beckman Coulter, Inc. Solid state ion selective electrodes
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

Citations (1)

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US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors

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JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
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Also Published As

Publication number Publication date
US20200025710A1 (en) 2020-01-23
CN106104265A (zh) 2016-11-09
ES2818111T3 (es) 2021-04-09
US10067085B2 (en) 2018-09-04
US10436743B2 (en) 2019-10-08
CA2938155A1 (en) 2015-08-20
ES2542927A2 (es) 2015-08-12
EP3106865B1 (en) 2020-06-10
KR20160119096A (ko) 2016-10-12
US20190017958A1 (en) 2019-01-17
EP3106865A1 (en) 2016-12-21
US20170010237A1 (en) 2017-01-12
WO2015121516A1 (es) 2015-08-20
MX2016010017A (es) 2016-10-07
JP2017505443A (ja) 2017-02-16
US11029278B2 (en) 2021-06-08

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