KR20160119096A - 차동 측정 기반 이온 센서 및 그 제조 방법 - Google Patents

차동 측정 기반 이온 센서 및 그 제조 방법 Download PDF

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Publication number
KR20160119096A
KR20160119096A KR1020167021498A KR20167021498A KR20160119096A KR 20160119096 A KR20160119096 A KR 20160119096A KR 1020167021498 A KR1020167021498 A KR 1020167021498A KR 20167021498 A KR20167021498 A KR 20167021498A KR 20160119096 A KR20160119096 A KR 20160119096A
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KR
South Korea
Prior art keywords
ion
field effect
effect transistor
sensor
selective field
Prior art date
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Withdrawn
Application number
KR1020167021498A
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English (en)
Korean (ko)
Inventor
안토니 발디 콜
카를로스 도밍게스 호르나
세실리아 히메네스 호르케라
세사르 페르난데스 산체스
앤드류 요베라 아단
앙겔 멜로스 도밍고
알프레도 카다르소 부스토
이자벨 부르달로 바우티스타
페란 베라 그라스
Original Assignee
콘세호 수페리오르 데 인베스티가시오네스 시엔티피카스
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Application filed by 콘세호 수페리오르 데 인베스티가시오네스 시엔티피카스 filed Critical 콘세호 수페리오르 데 인베스티가시오네스 시엔티피카스
Publication of KR20160119096A publication Critical patent/KR20160119096A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
KR1020167021498A 2014-02-11 2015-01-29 차동 측정 기반 이온 센서 및 그 제조 방법 Withdrawn KR20160119096A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ESP201430180 2014-02-11
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (1)

Publication Number Publication Date
KR20160119096A true KR20160119096A (ko) 2016-10-12

Family

ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167021498A Withdrawn KR20160119096A (ko) 2014-02-11 2015-01-29 차동 측정 기반 이온 센서 및 그 제조 방법

Country Status (9)

Country Link
US (3) US10067085B2 (enExample)
EP (1) EP3106865B1 (enExample)
JP (1) JP2017505443A (enExample)
KR (1) KR20160119096A (enExample)
CN (1) CN106104265A (enExample)
CA (1) CA2938155A1 (enExample)
ES (2) ES2542927R1 (enExample)
MX (1) MX2016010017A (enExample)
WO (1) WO2015121516A1 (enExample)

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* Cited by examiner, † Cited by third party
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ES2542927R1 (es) 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
WO2018210803A1 (en) * 2017-05-15 2018-11-22 Analog Devices Global Unlimited Company Integrated ion sensing apparatus and methods
WO2019093907A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
WO2021146105A1 (en) * 2020-01-13 2021-07-22 Beckman Coulter, Inc. Solid state ion selective electrodes
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
EP0155725A1 (en) 1984-02-27 1985-09-25 Sentron v.o.f. Ion concentration measurement system that employs measuring and reference field effect transistor electrodes sensitive to the same ion
JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
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US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
TW533593B (en) * 2002-05-20 2003-05-21 Univ Nat Yunlin Sci & Tech Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof
GB2416210B (en) * 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP4731544B2 (ja) * 2007-12-17 2011-07-27 株式会社日立製作所 生体分子検出装置及びそれを用いた生体分子検出方法
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US20130158378A1 (en) * 2011-09-22 2013-06-20 The Ohio State University Ionic barrier for floating gate in vivo biosensors
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US9459234B2 (en) * 2011-10-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) CMOS compatible BioFET
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ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
US9733210B2 (en) * 2014-12-31 2017-08-15 International Business Machines Corporation Nanofluid sensor with real-time spatial sensing

Also Published As

Publication number Publication date
US20200025710A1 (en) 2020-01-23
CN106104265A (zh) 2016-11-09
ES2818111T3 (es) 2021-04-09
US10067085B2 (en) 2018-09-04
US10436743B2 (en) 2019-10-08
CA2938155A1 (en) 2015-08-20
ES2542927A2 (es) 2015-08-12
EP3106865B1 (en) 2020-06-10
US20190017958A1 (en) 2019-01-17
EP3106865A1 (en) 2016-12-21
US20170010237A1 (en) 2017-01-12
WO2015121516A1 (es) 2015-08-20
MX2016010017A (es) 2016-10-07
ES2542927R1 (es) 2015-09-09
JP2017505443A (ja) 2017-02-16
US11029278B2 (en) 2021-06-08

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PA0105 International application

Patent event date: 20160805

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid